marking ZI
Abstract: marking ZI SOT KTN2369S
Text: SEMICONDUCTOR KTN2369S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking ZI No. 1 Item Marking Device Mark ZI KTN2369S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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KTN2369S
OT-23
marking ZI
marking ZI SOT
KTN2369S
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MARKING CODE Zi sot363
Abstract: TMF3201J ZI Marking Code transistor MOSFET 9935
Text: TMF3201J Semiconductor Dual Gate MOSFET □ Description The TMF3201J is an N-channel enhancement type, dual- SOT-363 insulated gate, field-effect transistor that utilizes MOS Unit in mm construction. It consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads. The source
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TMF3201J
TMF3201J
OT-363
OT-363
KSD-A5S001-000
MARKING CODE Zi sot363
ZI Marking Code transistor
MOSFET 9935
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marking ZI SOT
Abstract: VEBO-15V 2SC4366 Low frequency amplifier
Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4366 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 Low Frequency amplifier. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter
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2SC4366
OT-23
100mA
300mA
marking ZI SOT
VEBO-15V
2SC4366
Low frequency amplifier
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B35Y FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency
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RZ1214B35Y
OT443
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D034 RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of 1997 Feb 18 1999 Dec 24 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A
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M3D034
RZ1214B65Y
OT443
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marking zo sot -6
Abstract: No abstract text available
Text: FJX597J FJX597J Capacitor Microphone Applications • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic 2 1 SOT-323 1. Drain 2. Source 3. Gate Si N-channel Junction FET
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FJX597J
OT-323
marking zo sot -6
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor LTE21015R FEATURES PINNING - SOT44QA • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
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LTE21015R
OT44QA
MGL062
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MARKING FZ
Abstract: BAS19W BAS20W BAS21W marking kt3
Text: BAS19W-BAS21W VISHAY SURFACE MOUNT FAST SWITCHING DIODE Ì LITEM ZI POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-323
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OCR Scan
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BAS19W-BAS21W
OT-323,
MIL-STD-202,
BAS19W
BAS20W
BAS21W
OT-323
100mA
200mA
DS30118
MARKING FZ
marking kt3
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142 transistor
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor LTE42012R FEATURES PINNING - SOT44QA • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
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OCR Scan
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PDF
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LTE42012R
OT44QA
MGL013
142 transistor
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DS30002
Abstract: MCL4448
Text: MCL4448 VISHAY SURFACE MOUNT FAST SWITCHING DIODE y LITEM ZI POWER SEMICONDUCTOR Features • • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance Fits on SOD-323 / SOT-23 Footprint
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OCR Scan
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PDF
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MCL4448
OD-323
OT-23
MIL-STD-202,
MCL4448
100mA
DS30002
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MMBD7000
Abstract: No abstract text available
Text: MMBD7000 VISHAY DUAL SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWER SEMICONDUCTOR Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 -H ; h - A 7 B Mechanical Data
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OCR Scan
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PDF
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MMBD7000
OT-23,
MIL-STD-202,
OT-23
MMBD7000
DS12025
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KL31
Abstract: 100S BAV23S marking kl31 sot23
Text: BAV23S V IS H A Y SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 m 1
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PDF
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BAV23S
OT-23,
MIL-STD-202,
OT-23
BAV23S
100mA
200mA
DS30042
KL31
100S
marking kl31 sot23
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100S
Abstract: BAW56W
Text: PRELIM INARY BAW56W VISHAY DUAL SURFACE MOUNT SWITCHING DIODE Ì LITEM ZI POW ER SEMICONDUCTOR Features Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance SOT-323 -H : h -A B C _±_ Mechanical Data_
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BAW56W
OT-323,
MIL-STD-202,
OT-323
BAW56W
DS30064
100S
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MMBD914
Abstract: JJ sot23 diode
Text: MMBD914 VISHAY SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWERSEMICONDUCTOR Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 -H ; h - A t B Mechanical Data
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MMBD914
OT-23,
MIL-STD-202,
OT-23
DS12020
MMBD914
JJ sot23 diode
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SOT-23 MARKING ka6
Abstract: ba816 Vishay Diode BAS16 BAS16 marking KA6 DS12003
Text: BAS 16 V IS H A Y SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 -H Ih-A
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OT-23,
MIL-STD-202,
OT-23
DS12003
BAS16
BAS16
SOT-23 MARKING ka6
ba816
Vishay Diode BAS16
marking KA6
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BA831
Abstract: DS1101 BAS31 sot-23 k21 marking K21
Text: BAS31 V IS H A Y DUAL SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23
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PDF
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OT-23,
MIL-STD-202,
OT-23
DS11016
BAS31
BAS31
BA831
DS1101
sot-23 k21
marking K21
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100S
Abstract: BAV70W
Text: PRELIM INARY BAV70W VISHAY DUAL SURFACE MOUNT SWITCHING DIODE Ì LITEM ZI POW ER SEMICONDUCTOR Features Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance SOT-323 -H : h -A b \ k I Mechanical Data_
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BAV70W
OT-323,
MIL-STD-202,
OT-323
BAV70W
DS30063
100S
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ka2 DIODE
Abstract: MARKING KA2 SOT-23 MMBD4148 marking HA 7 sot23
Text: MMBD4148 VISHAY SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWERSEMICONDUCTOR Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 -H ; h - A t B Mechanical Data
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PDF
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MMBD4148
OT-23,
MIL-STD-202,
OT-23
DS12010
MMBD4148
ka2 DIODE
MARKING KA2 SOT-23
marking HA 7 sot23
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100S
Abstract: BAS16W MMBD4148W
Text: PRELIM INARY MMBD4148W / BAS16W VISHAY SURFACE MOUNT FAST SWITCHING DIODE Ì LITEM ZI POWER SEMICONDUCTOR Features Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance SOT-323 - H ;h-A I + Mechanical Data_
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PDF
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MMBD4148W
BAS16W
OT-323,
MIL-STD-202,
OT-323
DS30094
100S
BAS16W
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BAV99W
Abstract: BAV99W peak temperature
Text: BAV99W VISHAY DUAL SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWER SEMICONDUCTOR Features Fast Switching Speed Ultra-small Surface Mount Package For General Purpose Switching Applications High Conductance SOT-323 -H : h -A 4 I Mechanical Data I I top j V ie w |
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BAV99W
OT-323,
MIL-STD-202,
OT-323
BAV99W
DS30045
BAV99W peak temperature
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Diode SOT-23 marking JE
Abstract: Diode bav99 kje KJE BAV99 kje vishay bav99 general bav99 vishay BAV99 application Diode bav99 BAV99 KJE SOT-23
Text: BAV99 V IS H A Y DUAL SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWER SEMICONDUCTOR Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 I iI Mechanical Data
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PDF
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BAV99
OT-23,
MIL-STD-202,
OT-23
DS12007
BAV99
Diode SOT-23 marking JE
Diode bav99 kje
KJE BAV99
kje vishay
bav99 general
bav99 vishay
BAV99 application
Diode bav99
KJE SOT-23
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SOT-23 2D
Abstract: Vishay MMBTA42 MMBTA42 MMBTA92
Text: MMBTA92 v isH A Y PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Type Available M M BTA42 Ideal for Medium Power Amplification and Switching SOT-23 TOR VIEW
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OCR Scan
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PDF
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MMBTA92
MMBTA42)
OT-23,
MIL-STD-202,
OT-23
-10mA,
-30mA,
-20mA,
SOT-23 2D
Vishay MMBTA42
MMBTA42
MMBTA92
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MMBT4124
Abstract: MMBT4126 DS30105
Text: MMBT4124 VISHAY NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available M M B T4126 Ideal for Medium Power Amplification and Switching SOT-23 - H ;h“ A T TOPÌ VIEW
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OCR Scan
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MMBT4124
MMBT4126)
OT-23,
MIL-STD-202,
OT-23
100MHz
100HA,
300ns,
DS30105
MMBT4124
MMBT4126
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k72 transistor sot 23
Abstract: transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23
Text: 2N7002-01 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~ *\ : h - A TOP VIEW
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OCR Scan
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2N7002-01
OT-23,
MIL-STD-202,
OT-23
300ns,
DS30026
2N7002-01
k72 transistor sot 23
transistor marking s72
k72 sot-23
transistor s72
k72 sot 23
k72 transistor
S72 transistor
S72 marking
702 TRANSISTOR sot-23
K72 SOT23
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