13003ad
Abstract: 13003ADA
Text: UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high
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13003ADA
13003ADA
13003ADAL-TM3-T
13003ADAL-T60-F-K
13003ADAL-T92-F-B
13003ADAL-T9at
QW-R223-016
13003ad
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13003AD
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high
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13003ADA
13003ADA
13003ADAL-TM3-T
13003ADAL-T60-F-at
QW-R223-016
13003AD
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ic 741 free
Abstract: T92 marking 2SA1977 NE68133 NE97733 S21E 682 MARKING SOT-23 sot-23 24
Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz 33 SOT 23 STYLE
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NE97733
NE68133
NE97733
2SA1977
24-Hour
ic 741 free
T92 marking
2SA1977
NE68133
S21E
682 MARKING SOT-23
sot-23 24
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13003ADA
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high
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13003ADA
13003ADA
13003ADAL-TM3-T
13003ADAL-T60-K
QW-R223-016
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13003CD
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 13003CDH Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch
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13003CDH
290ns
13003CDHL-TM3-T
13003CDHGat
QW-R223-022
13003CD
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T92 DIODE
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 13003ADG Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch
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13003ADG
290ns
13003ADGL-TM3-T
13003ADGPat
QW-R223-023
T92 DIODE
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617-70
Abstract: 2SA1977 2SC3583 MARKING T92 nec 561 LI-01/transistor k 0247
Text: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1977 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES _0.2 2.8+ High fT 0.4 +0.1 –0.05 • PACKAGE DIMENSION in millimeters fT = 8.5 GHz TYP. • High gain 0.65 +0.1 –0.15 1.5 | S21e | = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA
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2SA1977
617-70
2SA1977
2SC3583
MARKING T92
nec 561
LI-01/transistor k 0247
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transistor C 548 B
Abstract: TRANSISTOR c 547 B transistor bc547 specifications
Text: UNISONIC TECHNOLOGIES CO., LTD BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * High Voltage: UTC BC546, VCEO=65V UTC BC547, VCEO=45V UTC BC548, VCEO=30V 1 TO-92 ORDERING INFORMATION Order Number Lead Free
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BC546/547/548
BC546,
BC547,
BC548,
BC546L-x-T92-B
BC546G-x-T92-B
BC546L-x-T92-K
BC546G-x-T92-K
BC547L-x-T92-B
BC547G-x-T92-B
transistor C 548 B
TRANSISTOR c 547 B
transistor bc547 specifications
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 13005BA Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.
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13005BA
QW-R201-089
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NTJS3157NT1G
Abstract: marking T92 SOT363 t92 surface mount t92 transistor NTJS3157N NTJS3157NT1 NTJS3157NT2 NTJS3157NT2G NTJS3157NT4 NTJS3157NT4G A-7085
Text: NTJS3157N Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • Fast Switching for Increased Circuit Efficiency • SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board
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NTJS3157N
SC-88
SC-88
SC-70-6
OT-363)
NTJS3157N/D
NTJS3157NT1G
marking T92 SOT363
t92 surface mount t92 transistor
NTJS3157N
NTJS3157NT1
NTJS3157NT2
NTJS3157NT2G
NTJS3157NT4
NTJS3157NT4G
A-7085
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Untitled
Abstract: No abstract text available
Text: NTJS3157N Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • Fast Switching for Increased Circuit Efficiency • SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board
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NTJS3157N
NTJS3157N/D
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 13005BA Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.
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13005BA
QW-R201-089
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marking T92 SOT363
Abstract: Marking code t92
Text: NTJS3157N Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • Fast Switching for Increased Circuit Efficiency • SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board
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NTJS3157N
SC-88
SC-88
SC-70-6
OT-363)
NTJS3157N/D
marking T92 SOT363
Marking code t92
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD669xG-x-AA3-R
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2SD669/A
2SB649/A
2SD669xG-x-AA3-R
2SD669xG-x-AB3-R
2SD669xG-x-AE3-R
2SD669xG-x-AE3-6-R
2SD669xL-x-T60-K
2SD669xG-x-T60-K
2SD669xL-x-T6C-K
2SD669xG-x-T6C-K
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. FEATURES
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5302D
5302D
OT-223
5302DG-AA3-R
5302DL-T60-K
5302DG-T60-K
O-126
5302DL-T92-B
5302DG-T92-B
5302DL-T92-K
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triac 600v. 1a. to 92
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UZ0103 Preliminary TRIAC 1A TRIAC DESCRIPTION 1 The UTC UZ0103 is a 1A triac, it is suitable for general purpose AC switching applications, fan speed controllers and home appliances. FEATURES 1 * IGT≤3mA I-II-III , IGT≤5mA (IV)
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UZ0103
UZ0103
OT-223
UZ0103G-x-AA3-R
UZ0103L-x-T92-B
UZ0103G-x-T92-B
UZ0103L-x-T92-K
UZ0103G-x-T92-K
triac 600v. 1a. to 92
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2w sot-23
Abstract: he8050 HE8550 small signal transistor HE8550L
Text: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 1 2 SOT-89 1 SOT-23 DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for
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HE8550
OT-89
OT-23
HE8550
HE8050
O-92NL
HE8550L
HE8550-x-AB3-R
HE8550L-x-AB3-R
HE8550-x-AE3-R
2w sot-23
he8050
small signal transistor
HE8550L
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 1 2 SOT-89 1 SOT-23 DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for
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HE8550
OT-89
OT-23
HE8550
HE8050
O-92NL
HE8550L
HE8550-x-AB3-R
HE8550L-x-AB3-R
HE8550-x-AE3-R
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HE8050
Abstract: HE8050L HE8050L-x-AE3-R HE8050-x-AB3-R
Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR 3 1 2 SOT-89 1 SOT-23 DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for
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HE8050
HE8050
OT-89
OT-23
HE8550
O-92NL
HE8050L
HE8050-x-AB3-R
HE8050L-x-AB3-R
HE8050-x-AE3-R
HE8050L
HE8050L-x-AE3-R
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Untitled
Abstract: No abstract text available
Text: GM2950/GM2951 100mA, LOW DROPOUT VOLTAGE REGULATORS Description Features The GM2950 and GM2951 is a low power voltage regulator. This device is an excellent choice for use in battery powered application such as cordless telephone, radio control systems, and portable
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GM2950/GM2951
100mA,
GM2950
GM2951
100mA
GM2950/GM2951
J-STD-020.
900ppm
1500ppm
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR 3 1 2 SOT-89 1 SOT-23 DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for
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HE8050
OT-89
OT-23
HE8050
HE8550
O-92NL
HE8050L
HE8050-x-AB3-R
HE8050L-x-AB3-R
HE8050-x-AE3-R
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Untitled
Abstract: No abstract text available
Text: 3-TERMINAL 100mA ADJUSTABLE REGULATOR Description Features The GM317L is an adjustable 3-terminal positive voltage regulator capable of supplying 100mA over an output voltage range of 1.2 V to 37 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to
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100mA
GM317L
J-STD-020.
900ppm
1500ppm
GM317LV2
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT131 TRIAC TRIAC LOGIC LEVEL DESCRIPTION 1 Passivated, sensitive gate triac in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to
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UT131
OT-223
UT131G-x-AA3-R
UT131L-x-T92-B
UT131G
-x-T92-B
UT131L-x-T92-K
-x-T92-K
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Marking code t92
Abstract: TRANSISTOR B S MGD624
Text: Philips Semiconductors Product specification PNP switching transistor FEATURES BSR18A PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector • High-speed saturated switching. DESCRIPTION
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BSR18A
BSR17A.
BSR18A
MGD624
Marking code t92
TRANSISTOR B S
MGD624
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