B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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s10p40
Abstract: C53l SS34 sma SS54 smb K4 SOD SK24 equivalent SK34 smc diode s14L SSM14APT SSM5819SLPT
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Equivalent Current Voltage Surge Current Outline Circuit @ 25°C TA @ 25°C TA @ 8.3mS NO. Diagram IR IFM Surge
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OD-123
S30S20PT
S30S30PT
S30S35PT
s10p40
C53l
SS34 sma
SS54 smb
K4 SOD
SK24 equivalent
SK34 smc
diode s14L
SSM14APT
SSM5819SLPT
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s10p40
Abstract: SCM54 SCM35 SBM19 SCM84 SSM19 SCM32 Ssm34 SBM14 SSM35
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Current Voltage Surge Current Outline @ 25°C TA @ 25°C TA @ 8.3mS NO. IR IFM VFM IFM Surge Adc APK
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OD-123
S15P20
S15P30
S15P40
s10p40
SCM54
SCM35
SBM19
SCM84
SSM19
SCM32
Ssm34
SBM14
SSM35
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Untitled
Abstract: No abstract text available
Text: Surface Mount Schottky Diodes Operating Temperature: -65o C to 150°C VF V Max. Part No. Device Marking Code Pd (mW) PIV (V) Min. IR (µA) Max. @ 0.1 mA @ 1.0 mA @ 2.0 mA @ 10 mA @ 15 mA @ 20 mA @ 30 mA @ @ 40/50 100/200 mA mA @ 250 mA TR R (nS) Max. Outline
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BAT54
BAT54A
BAT54C
BAT54S
BAS40
BAS40-04
BAS40-05
BAS40-06
BAS70
BAS70-04
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SS36 GALAXY
Abstract: marking code s4 SMc S4 Schottky SS34 smc SS32 SS33 SS34 SS36
Text: BL GALAXY ELECTRICAL SS32 - - - SS36 REVERSE VOLTAGE: 20 - 60 V CURRENT: 3.0 A SCHOTTKY BARRIER RECTIFIER FEATURES DO - 214AB SMC ◇ Plastic package has Underwriters Laborator 111 Flammability Classification 94V-0 ◇ For surface mounted applications ◇ Low profile package
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214AB
DO-214AB
50mVp-p
SS32-SS34
SS35-SS36
SS36 GALAXY
marking code s4 SMc
S4 Schottky
SS34 smc
SS32
SS33
SS34
SS36
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ss34
Abstract: No abstract text available
Text: MCC SS32 THRU SS36 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • 3 Amp Schottky Rectifier 20 to 60 Volts Low profile Surface Mount package Plastic package has Underwriters Laboratory Flammability
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DO-214AB
DO-214AB
MILSTD750,
50mVp-p
ss34
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SS34
Abstract: marking ss34 S4 Schottky schottky marking S4 SS32 SS33 SS35 SS36
Text: SS32 THRU SS36 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 60 Volts FEATURES DO-214AB 0.126 3.20 0.114 (2.90) 0.245 (6.22) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) ♦ Plastic package has Underwriters Laboratory
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DO-214AB
50mVp-p
SS34
marking ss34
S4 Schottky
schottky marking S4
SS32
SS33
SS35
SS36
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SS34
Abstract: marking ss34 SS36 s6 smc general semiconductor SS34 smc SS32 marking code s4 diode s4 vishay schottky marking S4 ss34 vishay
Text: SS32 thru SS36 Vishay Semiconductors formerly General Semiconductor Surface Mount Schottky Rectifier Reverse Voltage 20 to 60V Forward Current 3.0A DO-214AB SMC Cathode Band Mounting Pad Layout Dimensions in inches and (millimeters) 0.185 MAX. (4.69 MAX.)
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DO-214AB
50mVp-p
1-Jul-02
SS34
marking ss34
SS36
s6 smc general semiconductor
SS34 smc
SS32
marking code s4 diode
s4 vishay
schottky marking S4
ss34 vishay
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marking ss34
Abstract: ss36 ss34 SS353 SS32-34
Text: MCC SS32 THRU SS36 omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features • • • • • • • 3 Amp Schottky Rectifier 20 to 60 Volts Low profile Surface Mount package Plastic package has Underwriters Laboratory Flammability
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DO-214AB
DO-214AB
MILSTD750,
50mVp-p
marking ss34
ss36
ss34
SS353
SS32-34
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SS34
Abstract: SS32 SS33 SS35 SS36
Text: SS32 THRU SS36 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 60 Volts FEATURES DO-214AB 0.126 3.20 0.114 (2.90) 0.245 (6.22) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) ♦ Plastic package has Underwriters Laboratory
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DO-214AB
50mVp-p
SS34
SS32
SS33
SS35
SS36
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SS35B-SS36B
Abstract: SS36B GALAXY SS36B SS32B-SS34B SS32B SS33B SS34B
Text: BL GALAXY ELECTRICAL SS32B - SS36B REVERSE VOLTAGE: 20 - 60 V CURRENT: 3.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES DO - 214AA SMB ◇ Plastic package has Underwriters Laborator 111 Flammability Classification 94V-0 ◇ For surface mounted applications
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SS32B
SS36B
214AA
50mVp-p
SS32B-SS34B
SS35B-SS36B
SS35B-SS36B
SS36B GALAXY
SS36B
SS32B-SS34B
SS33B
SS34B
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SS34
Abstract: SS32
Text: MCC TM Micro Commercial Components SS32 THRU SS36 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • 3 Amp Schottky Rectifier 20 to 60 Volts Low profile Surface Mount package
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DO-214AB
DO-214AB
MILSTD750,
50mVp-p
SS34
SS32
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marking diode DO-214AB
Abstract: s6 smc schottky DO-214AB SS34 SMc SS36 SS34 marking code s4 diode SS32 SS33 SS35
Text: SS32 thru SS36 Surface Mount Schottky Rectifier Reverse Voltage 20 to 60V Forward Current 3.0A DO-214AB SMC Mounting Padp Layout DO-214AB 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.185 MAX. (4.69 MAX.) Dimensions in inches and (millimeters) 0.121 MIN.
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DO-214AB
50mVp-p
marking diode DO-214AB
s6 smc schottky
DO-214AB
SS34 SMc
SS36
SS34
marking code s4 diode
SS32
SS33
SS35
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1SS364
Abstract: No abstract text available
Text: 1SS364 TOSHIBA 1 SS364 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package. Small Total Capacitance : Cx = 1.2pF Max. Low Series Resistance : rs = 0.60 (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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OCR Scan
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PDF
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1SS364
100MHz
1SS364
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1SS364
Abstract: No abstract text available
Text: 1SS364 TOSHIBA 1 SS364 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package. Small Total Capacitance : Cx = 1.2pF Max. Low Series Resistance : rs = 0.60 (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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OCR Scan
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PDF
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1SS364
100MHz
1SS364
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1SS369
Abstract: No abstract text available
Text: TO SHIBA 1SS369 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS369 LO W VOLTAGE HIGH SPEED SWITCHING U nit in mm • Small Package • Low Forward Voltage : V f 3 —0.54V (TYP.) • Low Reverse Current : Ir = 5/¿A (MAX.) 0.8 ±0.1 1.3 ± 0.1
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OCR Scan
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PDF
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1SS369
961001EAA2'
1SS369
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general instrument S4
Abstract: s6 general semiconductor
Text: SS32 THRU SS36 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 60 Volts Forward Current -3 .0 Amperes FEATURES D O -214A B ♦ Plastic package has Underwriters Laboratory Flam m ability Classification 94V-0 ♦ For surface m ount applications
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OCR Scan
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PDF
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-214A
general instrument S4
s6 general semiconductor
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1SS362
Abstract: No abstract text available
Text: TOSHIBA 1SS362 1 SS362 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Small Package Low Forward Voltage : Vjn = 0.97V Typ. Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance
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OCR Scan
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PDF
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1SS362
961001EAA2'
1SS362
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1SS361
Abstract: No abstract text available
Text: TOSHIBA 1SS361 1 SS361 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • 1 . 6 ± 0.2 Small Package Low Forward Voltage : Vjn = 0.9V Typ. Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance
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OCR Scan
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PDF
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1SS361
961001EAA2'
1SS361
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SS369
Abstract: No abstract text available
Text: TO SHIBA 1SS369 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS369 LO W VOLTAGE HIGH SPEED SWITCHING Unit in mm • Small Package • Low Forward Voltage : VF 3 = 0.54V (TYP.) • Low Reverse Current : IR = 5,uA(MAX.) M A X IM U M RATINGS (Ta = 25°C)
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OCR Scan
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PDF
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1SS369
SS369
20Sem
961001EAA2'
SS369
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1SS360
Abstract: No abstract text available
Text: TOSHIBA 1SS360 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS360 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • 1.6± 0.2 Small Package Low Forward Voltage : Vjn = 0.92V Typ. Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance
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OCR Scan
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PDF
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1SS360
961001EAA2'
1SS360
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Untitled
Abstract: No abstract text available
Text: SS32 THRU SS36 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 60 Volts Forward Current - 3.0 Amperes FEATURES DO-214AB ♦ Plastic package has Underwriters Laboratory Rammability Classification 94V-0 ♦ For surface mount applications ♦ Low profile package
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OCR Scan
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PDF
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DO-214AB
DO-214AB
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1SS364
Abstract: marking LL
Text: 1SS364 TO SH IBA 1 SS364 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS • Small Package. • Small Total Capacitance : Cx = 1.2pF Max. • Low Series Resistance : rs = 0.60 (Typ.) MAXIMUM RATINGS (Ta = 25°C)
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OCR Scan
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PDF
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1SS364
100MHz
1SS364
marking LL
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