MARKING NT SOT23
Abstract: KRC244S NT marking
Text: SEMICONDUCTOR KRC244S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking NT No. 1 Item Marking Device Mark NT KRC244S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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KRC244S
OT-23
MARKING NT SOT23
KRC244S
NT marking
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2SA1037KPT SURFACE MOUNT PNP Silicon Transistor VOLTAGE 50 Volts CURRENT 150 mAmpere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. SOT-23 SOT-23 .055 (1.40) .047 (1.20) MARKING * NT .019 (0.50) (2) .103 (2.64)
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2SA1037KPT
OT-23)
OT-23
150mW
120mW
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Untitled
Abstract: No abstract text available
Text: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: [email protected]
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AS1923
AS1923
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4116 dram
Abstract: Silicon PIN diode high speed pin diagram of ic 4141 2QSP24 MO-137
Text: PL IA NT Features S oH *R 24Q DTA 2 005 041 CO M • ■ ■ ■ ■ Lead free RoHS compliant* 18 termination channels Incorporates 36 bidirectional Schottkybased diodes Small form factor replaces 18 SOT23 packages ■ ■ Low forward voltage 2 options available
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18 SOT23
Abstract: pin diagram of ic 4141
Text: *R oH S • 24Q DTA 2 005 041 CO M PL IA NT Features ■ ■ ■ ■ Model 2DTA is currently available, although not recommended for new designs. Lead free RoHS compliant* 18 termination channels Incorporates 36 bidirectional Schottkybased diodes Small form factor replaces 18 SOT23
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2QSP24
Abstract: MO-137 18 SOT23
Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E • 24Q DTA 2 005 041 *R Features ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * 18 termination channels Incorporates 36 bi-directional Schottkybased diodes Small form factor replaces 18 SOT23
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4116 DRAM
Abstract: 2QSP24 MO-137 DTA24Q Silicon PIN diode high speed
Text: *R oH S • ■ 24Q DTA 2 005 041 CO M PL IA NT Features ■ ■ ■ Model 2DTA is obsolete and not recommended for new designs. Lead free RoHS compliant* 18 termination channels Incorporates 36 bidirectional Schottkybased diodes Small form factor replaces 18 SOT23
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2SA1037AK
Abstract: No abstract text available
Text: 2SA1037AK PNP 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value -50 -60 -6.0 -150 200 1.6 625 T J ,Tstg -50 -1.0 -60 -50 -6.0 -50 E=-50Vdc, I E= 0 O ) -60 -6.0 WEITRON http://www.weitron.com.tw 1/5 -0.1 u -0.1 u -0.1 u 24-Jul-07 2SA1037AK ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
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2SA1037AK
OT-23
-50Vdc,
24-Jul-07
-12Vdc,
OT-23
2SA1037AK
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Untitled
Abstract: No abstract text available
Text: 2SA1037AK PNP 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO Value -50 -60 -6.0 -150 200 1.6 625 T J ,Tstg 2SA1037KQ=G3F, 2SA1037AKR=G4F, 2SA1037AKS=G5F -50 -1.0 -60 -50 -6.0 -50 E=-50Vdc, I E= 0 ) -60 -6.0 WEITRON http://www.weitron.com.tw O -0.1 u -0.1 u -0.1
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2SA1037AK
OT-23
2SA1037KQ
2SA1037AKR
2SA1037AKS
-50Vdc,
OT-23
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2SA1037KQ
Abstract: 2SA1037K-Q 2SA1037AK 2SA1037AKR 2SA1037AKS
Text: 2SA1037AK PNP 3 1 2 SOT-23 V CEO Value -50 -60 -6.0 -150 200 1.6 625 T J ,Tstg 2SA1037KQ=G3F, 2SA1037AKR=G4F, 2SA1037AKS=G5F -50 -1.0 -60 -50 -6.0 -50 E=-50Vdc, I E= 0 -60 -6.0 WEITRON http://www.weitron.com.tw O -0.1 u -0.1 u -0.1 u 2SA1037AK ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued)
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2SA1037AK
OT-23
2SA1037KQ
2SA1037AKR
2SA1037AKS
-50Vdc,
-12Vdc,
OT-23
2SA1037K-Q
2SA1037AK
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Untitled
Abstract: No abstract text available
Text: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: [email protected]
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AS1916
AS1918
AS1918
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1N5819 SOD-323
Abstract: No abstract text available
Text: APPROVE SHEET Customer: Customer Part Number: 1N5817~1N5819 PanJit Part Number: 1N5817~1N5819 Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.11.2005 DATE: APR.11.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129
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1N5817
1N5819
1N5819 SOD-323
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marking 1A7 SOT-23
Abstract: 1a7 sot-23 96x80 SOD123 S32 mark 3p SOT363
Text: APPROVE SHEET Customer: Customer Part Number: 1A1~1A7 PanJit Part Number: 1A1~1A7 Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.11.2005 DATE: APR.11.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129 NO. 24 , Kang Shan North Rd., Kang Shan Town ,
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168HRS
250HRS
500HRS
-750D
marking 1A7 SOT-23
1a7 sot-23
96x80
SOD123 S32
mark 3p SOT363
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Untitled
Abstract: No abstract text available
Text: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: [email protected]
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AS1910
AS1915
AS1915
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357T
Abstract: MARKING CODE b48 marking code VE marking B48 diode
Text: MMBD4448W6 SURFACE MOUNT FAST SWITCHING DIODE ARRAY FEATURES • Fast Switching Speed • Ultra-Small Surface Mount Package • For General Purpose Switching Applications • High Conductance • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
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MMBD4448W6
2002/95/EC
OT23-6L,
MIL-STD-750,
357T
MARKING CODE b48
marking code VE
marking B48 diode
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BAS121
Abstract: BAS121C BAS121A BAS121S
Text: BAS121/A/C/S SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE VOLTAGE 250 Volts POWER 250 mW FEATURES • High Reverse Blocking Voltage • Extremely Low Reverse Leakage Current • Surface Mount Package Ideally Suited for Automatic Insertion • In compliance with EU RoHS 2002/95/EC directives
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BAS121/A/C/S
2002/95/EC
OT-23,
MIL-STD-750,
BAS121
BAS121C
BAS121A
BAS121S
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Untitled
Abstract: No abstract text available
Text: APPROVE SHEET Customer: Customer Part Number: BY127M~EM513 PanJit Part Number: BY127M~EM513 Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.12.2005 DATE: APR.12.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129
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BY127M
EM513
BY513
BY133
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Untitled
Abstract: No abstract text available
Text: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 400 Volts 225 mWatts FEATURES • Silicon, planar design • Collector-emitter voltage VCE = 400V • Collector current I C = 300mA • MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026
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MMBTA44
300mA
OT-23,
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: 2N7002K 60V ESD Protected N-Channel Enhancement Mode MOSFET RDS ON , VGS@10V, IDS@500mA=2Ω RDS(ON), [email protected], IDS@200mA=3Ω SOT-23 FEATURES • • • • • • Advanced Trench Process Technology Ultra Low On Resistance : 2Ω Fast Switching Speed : 20ns
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2N7002K
500mA
200mA
OT-23
2002/95/EC
OT-23
MIL-STD-750,
200mA
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Untitled
Abstract: No abstract text available
Text: BAS121/A/C/S SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE VOLTAGE 250 Volts SOT-23 250 mW POWER Unit：inch mm 0.120(3.04) 0.110(2.80) • Extremely Low Reverse Leakage Current • Surface Mount Package Ideally Suited for Automatic Insertion *UHHQPROGLQJFRPSRXQGDVSHU,(& 6WG +DORJHQ)UHH
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BAS121/A/C/S
OT-23
OT-23,
MIL-STD-750,
2011-REV
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Untitled
Abstract: No abstract text available
Text: BAS121/A/C/S SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE VOLTAGE 250 Volts POWER SOT-23 250 mW Unit：inch mm 0.120(3.04) 0.110(2.80) • Extremely Low Reverse Leakage Current • Surface Mount Package Ideally Suited for Automatic Insertion 0.103(2.60)
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BAS121/A/C/S
2002/95/EC
OT-23
OT-23,
MIL-STD-750,
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400V 100MA NPN SOT23
Abstract: MMBTA44 eb6 sot23 A44 transistor MARKING A44
Text: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 400 Volts 225 mWatts FEATURES • Silicon, planar design • Collector-emitter voltage VCE = 400V • Collector current I C = 300mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-23, Plastic
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MMBTA44
300mA
2002/95/EC
OT-23,
MIL-STD-750,
400V 100MA NPN SOT23
MMBTA44
eb6 sot23
A44 transistor
MARKING A44
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Untitled
Abstract: No abstract text available
Text: MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate
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MMBT2907A
350mW,
OT-23
MIL-STD-202,
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DS357
Abstract: ZRA500F03 ZRA500 ZRA500F02 MARKING 25M SOT23
Text: PRECISION 5.0 VOLT MICROPOWER ZRA500F02 ZRA500F03 VOLTAGE REFERENCE FEATURES DEVICE DESCRIPTION Sm all o utline SOT23 package. No stabilising capacitor required. Typical Tc70ppm /*C. Typical slope resistance 0.55Q. Industrial tem p era ture range. O perating curre nt 5 0 n A to 5mA.
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ZRA500F02
ZRA500F03
Tc70ppm
ZRA250
ZRA500
ZRA500F03
ZRA500F
DS357
MARKING 25M SOT23
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