marking n1l
Abstract: MOS 20V 0.5A n1l sot-23 TN2106K1 TN2106ND MARKING CODE 028a sot 23 marking 8A sot-23 marking codes N1l transistors sot-23 TN2106 TN2106N3
Text: TN2106 TN2106 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* TO-92 Die N1L❋ 60V 2.5Ω 1.6V TN2106K1 TN2106N3 TN2106ND
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TN2106
OT-23:
O-236AB*
TN2106K1
TN2106N3
TN2106ND
OT-23.
marking n1l
MOS 20V 0.5A
n1l sot-23
TN2106K1
TN2106ND
MARKING CODE 028a sot 23
marking 8A sot-23
marking codes N1l transistors sot-23
TN2106
TN2106N3
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N1L SOT23
Abstract: 1W SOT-23 marking n1l TN2106 TN2106K1 TN2106N3 TN2106ND
Text: TN2106 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* TO-92 Die N1L❋ 60V 2.5Ω 2.0V TN2106K1 TN2106N3 TN2106ND where ❋ = 2-week alpha date code
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TN2106
OT-23:
O-236AB*
TN2106K1
TN2106N3
TN2106ND
OT-23.
N1L SOT23
1W SOT-23
marking n1l
TN2106
TN2106K1
TN2106N3
TN2106ND
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marking n1l
Abstract: mos n-channel SOT-23 TN2106 TN2106K1 TN2106N3 TN2106ND sot-23 MARKING CODE GS 5
Text: TN2106 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* TO-92 Die N1L❋ 60V 2.5Ω 2.0V TN2106K1 TN2106N3 TN2106ND where ❋ = 2-week alpha date code
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TN2106
OT-23:
O-236AB*
TN2106K1
TN2106N3
TN2106ND
OT-23.
marking n1l
mos n-channel SOT-23
TN2106
TN2106K1
TN2106N3
TN2106ND
sot-23 MARKING CODE GS 5
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1W SOT-23
Abstract: TN2106K1-G
Text: TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN2106
O-236,
TN2106
DSFP-TN2106
A020508
1W SOT-23
TN2106K1-G
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TN2106K1-G
Abstract: TO-236A 125OC TN2106 TN2106N3-G
Text: TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN2106
DSFP-TN2106
A091208
TN2106K1-G
TO-236A
125OC
TN2106
TN2106N3-G
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Untitled
Abstract: No abstract text available
Text: Supertex inc. TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability
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TN2106
DSFP-TN2106
B080913
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Untitled
Abstract: No abstract text available
Text: TN2106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain
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TN2106
DSFP-TN2106
A091208
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n1l sot-23
Abstract: MARKING CODE N1l sot 23
Text: ^ TN2106 . Supertax ine N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Product marking for SOT-23: Order Number / Package b v dss / ^D S O N ^ G S flh ) b v dgs (max) (max) SOT-231 TO-92 N1L* 60V 2.5a 1.6V
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TN2106
OT-231
TN2106K1
TN2106N3
OT-23:
n1l sot-23
MARKING CODE N1l sot 23
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n1l3N
Abstract: No abstract text available
Text: DATA SH EET NEC SILICON TRANSISTOR ELECTRON DEVICE G N1L3N MEDIUM S P EED SW ITCHING R ESISTO R BUILT-IN TY PE PNP TRAN SISTOR FEA TU RES PACKAGE DIMENSIONS • Resistors B u ilt-in T Y P E in m illim eters 9 C R t = 4 . 7 k 12 R 2 = 10 k f i *2 • - Ï O E
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K68A
Abstract: a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557
Text: QUICK REFERENCE GUIDE MINI MOLD SC-59 Q U IC K R E FE R EN C E TA B L E Switching Diodes □ m Leadless Type Q U IC K REFER EN C E TA B LE (Switching Diodes) □ \ ^ V R (V ) GENERAL P UHPO SE 30 50 70 LS53 LS 54 LS 55 LS 953 LS 954 L S 955 100 S IN G L E
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SC-59
DO-35
SC-63)
T0-220AB
K68A
a1f4m
A1A4M
R1Ik
N1A4M
2SK104
2SA1138
a1l4m
n1f4m
2SD1557
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1N589
Abstract: IN5809 1v500 1M5811 JANTX 1N5811 DIODE 1N5804 1N5896 j 5804 ns802 1N5809 equivalent
Text: MIL SPECS 44E » The documentation and proc*»» conversion m w r M necessary to comply with this revision shall be completed by 25 Apr 93. • □□□□155 0032612 7 ■ M I L S 1- 1 IINCH-POUNDj I . — I | j j ML-S-19S00/477B 25 January 1993
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GD0D12S
003S612
ml-S-19S00/477b
n1l-s-19s00/477a
1n58q2,
1ns804,
1ns806,
1ns807,
1h5809,
1ns811,
1N589
IN5809
1v500
1M5811
JANTX 1N5811
DIODE 1N5804
1N5896
j 5804
ns802
1N5809 equivalent
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qml-38535
Abstract: CDFP4-F16
Text: REVISIONS LTR APPROVED D ATE YR -M O -D A DESCRIPTION 1 REV SHEET REV SHEET REV S TA TU S OF SHEETS REV SHEET PM IC N /A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A
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MIL-HDBK-103.
MIL-HDBK-103
00M70fl
00213Sfl
qml-38535
CDFP4-F16
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qml-38535
Abstract: No abstract text available
Text: AMD i l DISTRIBUTION STATEMENT A . Approved for public release; distribution is unliaited. SM D Drawing Num ber 5962-90899 G eneric Part N um ber 28F010 4-663 n AM D 1. SCOPE 1.1 Scope. This drawing forms a part of a one part - one part nuaber documentation systea see 6 .6 herein . Two
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28F010
HIL-STD-883,
HIL-STD-883
5962-9089908MUX
28F010-250
28F010-200
qml-38535
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E 13007-1
Abstract: 13007 h3 detail of D 13007 K 13007 he 13007-1 SE 13007 SEC 13005 13005 2 E 13007 sec 13007
Text: Ml L-H-38510/610 25 FEB R U A R Y 1987 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, VHSIC, CMOS, 65,536-BIT SELECTABLE MODE, STATIC RANDOM ACCESS MEMORY SRAM , MONOLITHIC SILICON This specification Is approved for use by all Depart ments and Agencies of the Department of Defense.
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MlL-H-38510/610
536-BIT
536-b1t
E 13007-1
13007 h3
detail of D 13007 K
13007 he
13007-1
SE 13007
SEC 13005
13005 2
E 13007
sec 13007
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LHi 1148
Abstract: TZ 1148 5N05 HD v280r f11H1 54S112 FK 505 AM OA41 puls p-f2 PC11
Text: 2 m J u l-y w m c 23 iw o rm m re M I L - M - 38510/71B 16 Nov ember 1981 MILITARY MIC ROCIRCUIT S, D I G I T A L , SCHOTTKY T T L , F L I P - F L O P S , MONOL I THI C S I L I C O N This s p e c i f i c a t i o n is ments a nd Agencies 1. SPECIFICATION approved
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MIL-M-38510/71B
MIL-M-38510,
LHi 1148
TZ 1148
5N05 HD
v280r
f11H1
54S112
FK 505 AM
OA41
puls p-f2
PC11
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Untitled
Abstract: No abstract text available
Text: Pentium II Processor at 350 MHz, 400 MHz, and 450 MHz Datasheet Product Features • Available at 350 MHz, 400 MHz, and 450 MHz frequencies ■ System bus frequency at 100 MHz ■ Binary compatible with applications running on previous members of the Intel
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32-bit
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111ii
MZ5558
Z5555,
Z5556,
MZ5557
powec rm 1110
rm 1100 powec
MPC1000
transistors JX 6822 A
inverter welder 4 schematic
SAA 14Z
transistor SI 6822
stg 8810
PL 15Z DIODE
germanium transistor
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