marking code M2 SOT23
Abstract: marking M2 k1R transistor
Text: BC846A - BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · Ideally Suited for Automatic Insertion Complementary PNP Types Available BC856-BC858 For Switching and AF Amplifier Applications SOT-23 Dim A Min Max 0.37 0.51 B 1.19 1.40 C 2.10
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BC846A
BC848C
BC856-BC858)
OT-23
OT-23,
MIL-STD-202,
BC846B
BC847A
BC847B
marking code M2 SOT23
marking M2
k1R transistor
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BC817
Abstract: BC817-16LT1 BC817-25LT1 BC817-40LT1
Text: General Purpose Transistors NPN Silicon BC817-16LT1 BC817-25LT1 BC817-40LT1 3 COLLECTOR 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector–Emitter Voltage V CEO 45 V 2 Collector–Base Voltage V CBO 50 V Emitter–Base Voltage V EBO
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BC817-16LT1
BC817-25LT1
BC817-40LT1
236AB)
BC817
BC817-16LT1
BC817-25LT1
BC817-40LT1
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BC817LT1
Abstract: BC817 BC817-16LT1 BC817-25LT1 BC817-40LT1 marking M2 NPN
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon BC817-16LT1 BC817-25LT1 BC817-40LT1 3 COLLECTOR 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 45 V Collector–Base Voltage V CBO 50 V Emitter–Base Voltage
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BC817-16LT1
BC817-25LT1
BC817-40LT1
236AB)
BC817
BC817LT1
BC817-16LT1
BC817-25LT1
BC817-40LT1
marking M2 NPN
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TRANSISTOR SMD CODE PACKAGE SOT89
Abstract: PHILIPS MOSFET MARKING SC-62 SOT89 SMD CODE PACKAGE SOT89 TRANSISTOR SMD CODE PACKAGE SOT89 4 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 3x K TRANSISTOR SMD MARKING CODE SMD MARKING CODE transistor SMD TRANSISTOR 2005
Text: 2PD2150 20 V, 3 A NPN low VCEsat BISS transistor Rev. 01 — 22 April 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: 2PB1424.
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2PD2150
SC-62/
O-243)
2PB1424.
TRANSISTOR SMD CODE PACKAGE SOT89
PHILIPS MOSFET MARKING
SC-62 SOT89
SMD CODE PACKAGE SOT89
TRANSISTOR SMD CODE PACKAGE SOT89 4
TRANSISTOR SMD MARKING CODE
TRANSISTOR SMD MARKING CODE 3x
K TRANSISTOR SMD MARKING CODE
SMD MARKING CODE transistor
SMD TRANSISTOR 2005
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0411A 2SC6095 Bipolar Transistor 80V, 2.5A, Low VCE sat , NPN Single PCP http://onsemi.com Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter • Features Adoption of FBET, MBIT process Low collector-to-emitter saturation voltage
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ENA0411A
2SC6095
A0411-7/7
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Untitled
Abstract: No abstract text available
Text: 2SC6095 Ordering number : ENA0411 2SC6095 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features • • • • • Adoption of FBET, MBIT process.
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2SC6095
ENA0411
A0411-4/4
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2SC6095
Abstract: VR10 ENA0411 A0411
Text: 2SC6095 Ordering number : ENA0411 2SC6095 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features • • • • • Adoption of FBET, MBIT process.
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2SC6095
ENA0411
A0411-4/4
2SC6095
VR10
ENA0411
A0411
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KSC2982
Abstract: No abstract text available
Text: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking
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KSC2982
OT-89
KSC2982
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Untitled
Abstract: No abstract text available
Text: 2SC6095 Ordering number : ENA0411A SANYO Semiconductors DATA SHEET 2SC6095 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter • Features Adoption of FBET, MBIT process
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ENA0411A
2SC6095
A0411-7/7
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ENN8366
Abstract: CPH5903 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 ITR01966 J 350 FET
Text: CPH5903 Ordering number : ENN8366 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Junction Silicon FET CPH5903 High-Frequency Amplifier. AM Amplifier Applications Features • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
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CPH5903
ENN8366
CPH5903
2SK1740-equivalent
2SC2812-equivalent
ENN8366
ITR01960
ITR01961
ITR01963
ITR01964
ITR01965
ITR01966
J 350 FET
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Untitled
Abstract: No abstract text available
Text: 2SC6095 Ordering number : ENA0411A SANYO Semiconductors DATA SHEET 2SC6095 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter • Features Adoption of FBET, MBIT process
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2SC6095
ENA0411A
A0411-7/7
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Untitled
Abstract: No abstract text available
Text: STLDC08 Step-up controller for LED supply Features • Input voltage range from 0.8 V to 3.6 V ■ Overvoltage protection ■ Drives N-channel MOSFET or NPN bipolar transistor ■ No control loop compensation required ■ FET driver for very precise PWM dimming
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STLDC08
DFN10
STLDC08
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GRM31CB31C106K
Abstract: STLDC08 DFN10 GRM188R61C105K STPS2L30 STS5DNF20V i510ma C3M11
Text: STLDC08 Step-up controller for LED supply Features • Input voltage range from 0.8 V to 3.6 V ■ Overvoltage protection ■ Drives N-channel MOSFET or NPN bipolar transistor ■ No control loop compensation required ■ FET driver for very precise PWM dimming
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STLDC08
DFN10
STLDC08
GRM31CB31C106K
DFN10
GRM188R61C105K
STPS2L30
STS5DNF20V
i510ma
C3M11
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MARKING CODE B3 sot-89
Abstract: MY sot-89 NPN medium power transistor in a SOT package
Text: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking
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KSC2982
KSC2982
OT-89
KSC2982ATF
KSC2982BTF
KSC2982CTF
KSC2982DTF
MARKING CODE B3 sot-89
MY sot-89
NPN medium power transistor in a SOT package
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN6962C CPH5902 N-Channel JFET and NPN Bipolar Transistor 15V, 10 to 32mA, 50V, 150mA, Composite type CPH5 http://onsemi.com Features Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly
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EN6962C
CPH5902
150mA,
CPH5902
2SK2394-equivalent
2SC4639-equivalent
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marking 1a
Abstract: CPH5901 2SC4639 2SK932 82786
Text: CPH5901 Ordering number : ENN8278A TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
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CPH5901
ENN8278A
CPH5901
2SK932
2SC4639,
marking 1a
2SC4639
82786
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CPH5902
Abstract: ITR10364 ITR10365 2sk2394-equivalent ITR10367
Text: CPH5902 Ordering number : ENN6962B CPH5902 NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
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CPH5902
ENN6962B
CPH5902
2SK2394-equivalent
2SC4639-equivalent
ITR10364
ITR10365
ITR10367
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MMBR2857
Abstract: MMBR2060 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBR930 MMBR931 MMBFU310 MMBR5179 BFS17 E1
Text: SURFACE MOUNT PRODUCTS — SOT 23 continued RF SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN Device Marking Typ (GHz) •C (mA) MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR901 MMBR5031 MMBR2857 BFS17 BFS175 VCF (V)
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OT-23
MMBR930
BFR92
BFR92A
BFR93
BFR93A
MMBR931
MMBR2060
MMBR5179
MMBR920
MMBR2857
MMBR2857 MOTOROLA
MMBF4860
MMBR5031
MMBFU310
BFS17 E1
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2SC5066F
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SC5066F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5066F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF —l.ldB , |S2lel2= 12dB f=lGHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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OCR Scan
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2SC5066F
500MHz
2SC5066F
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SC5066F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5066F Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF= l.ldB, |S2le|2= 12dB f=lGHz 1.6 ± 0.1 0.85 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)
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OCR Scan
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2SC5066F
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s21c
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R \ 2 S Q 5 FOR VCO APPLICATION Q 7 U nit in mm 2 1±0 1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector C urrent Base C urrent Collector Power Dissipation
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OCR Scan
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SC-70
2SC5107
s21c
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme, ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from
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200mA
Q62702-C2481
OT-343
E35b05
012Gflb3
BCR400
flE35bQ5
012Dflb4
EHA07219
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2SC5066
Abstract: 2SC5066FT
Text: TO SH IBA 2SC5066FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5066FT VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 i e l 2 = 12dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC5066FT
0022g
2SC5066
2SC5066FT
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5066FT TOSHIBA TRANSISTOR K f SILICON NPN EPITAXIAL PLANAR TYPE RilfifiFT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • NF = l.ld B , |S2 ie l2 = 12dB U n it in mm 1.2 ± 0 .0 5 f= lG H z 0.8 ± 0.05
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2SC5066FT
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