transistor mark l6
Abstract: KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23
Text: KST1623L3/L4/L5/L6/L7 KST1623L3/L4/L5/L6/L7 Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 50 Units
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KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
transistor mark l6
KST1623L6
KST1623L3
KST1623L4
KST1623L5
KST1623L7
sot-23 Marking l7
SOT23 MARKING L7
marking L5 sot-23
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2SC1623
Abstract: L6 TRANSISTOR sot23 MARKING CODE L6 marking L6 sot23 L5 SOT23 l5 transistor sot23 L4 marking marking l4 sot-23 l6 sot23 l7 sot-23
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.
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2SC1623
200TYP
OT-23
BL/SSSTC0018
2SC1623
L6 TRANSISTOR
sot23 MARKING CODE L6
marking L6 sot23
L5 SOT23
l5 transistor
sot23 L4 marking
marking l4 sot-23
l6 sot23
l7 sot-23
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PDF
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L6 TRANSISTOR
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.
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2SC1623
200TYP
OT-23
BL/SSSTC0018
L6 TRANSISTOR
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SOT-323 marking L6
Abstract: l4 transistor SOT-323 marking .L6 2SC1623W transistor marking L6 L6 TRANSISTOR NPN Silicon Epitaxial Planar Transistor marking L6 npn
Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High DC current gain: hFE=200TYP. z High voltage: VCEO=50V. z Power dissipation. PC=200mW 2SC1623W Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier.
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2SC1623W
200TYP.
200mW)
OT-323
BL/SSSTF035
SOT-323 marking L6
l4 transistor
SOT-323 marking .L6
2SC1623W
transistor marking L6
L6 TRANSISTOR
NPN Silicon Epitaxial Planar Transistor
marking L6 npn
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Untitled
Abstract: No abstract text available
Text: SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current mA ICM: 100 Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range
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OT-23-3L
OT-23-3L
2SC1623
100mA,
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR mW (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 100 mA ICM: Collector-base voltage 60 V V(BR)CBO:
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OT-23
OT-23
2SC1623
100mA,
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MARKING L4
Abstract: l4 transistor transistor marking L6 2SC1623 MARKING l7 L6 MARKING L6 TRANSISTOR
Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current mA ICM: 100 Collector-base voltage
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OT-23-3L
OT-23-3L
2SC1623
100mA,
MARKING L4
l4 transistor
transistor marking L6
2SC1623
MARKING l7
L6 MARKING
L6 TRANSISTOR
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PDF
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MARKING l7
Abstract: sot-23 l6 2SC1623 transistor marking L6 MARKING L4
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current mA
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OT-23-3L
OT-23-3L
2SC1623
100mA,
MARKING l7
sot-23 l6
2SC1623
transistor marking L6
MARKING L4
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PDF
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KST1623L7
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 40 5.0 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage
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KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
KST1623L4
KST1623L5
KST1623L6
KST1623L7
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PDF
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MARKING l7
Abstract: l4 transistor 2SC1623 MARKING L4 transistor marking L6 L6 TRANSISTOR L6 IC marking L6
Text: 2SC1623 SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM: 100 mA Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range
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Original
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2SC1623
OT-23-3L
100mA,
MARKING l7
l4 transistor
2SC1623
MARKING L4
transistor marking L6
L6 TRANSISTOR
L6 IC
marking L6
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PDF
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hFE-200
Abstract: 2SC1623 l4 transistor l6 sot23 l5 transistors L5 SOT23 MARKING l7 transistor marking L6 l5 transistor SOT-23 marking l4 sot-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR NPN FEATURES z High DC current gain :hFE=200(Typ)VCE=6V, z High voltage:VCEO=50V 1. BASE IC=1mA 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
OT-23
2SC1623
100mA
hFE-200
2SC1623
l4 transistor
l6 sot23
l5 transistors
L5 SOT23
MARKING l7
transistor marking L6
l5 transistor SOT-23
marking l4 sot-23
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR NPN FEATURES z High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA z High voltage:VCEO=50V 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
OT-23
2SC1623
100mA
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2SC1623 sot-23
Abstract: 2sc1623 sot-23 Marking L6 L6 TRANSISTOR marking L6 sot23 l4 sot-23 marking L6 marking transistor sot-23 npn sot23 l6 marking l4 sot-23 sot-23 Marking l7
Text: 2SC1623 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High DC current gain :hFE=200(Typ)VCE=6V, High voltage:VCEO=50V IC=1mA MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
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OT-23
2SC1623
OT-23
100mA
2SC1623 sot-23
2sc1623
sot-23 Marking L6
L6 TRANSISTOR
marking L6 sot23
l4 sot-23 marking
L6 marking transistor sot-23
npn sot23 l6
marking l4 sot-23
sot-23 Marking l7
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SC4177 TRANSISTOR NPN FEATURES SOT–323 High DC Current Gain Complementary to 2SA1611 High Voltage APPLICATIONS General Purpose Amplification 1. BASE
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OT-323
2SC4177
2SA1611
100mA,
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SC4177 TRANSISTOR NPN FEATURES SOT–323 High DC Current Gain Complementary to 2SA1611 High Voltage APPLICATIONS General Purpose Amplification 1. BASE
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OT-323
2SC4177
2SA1611
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 ORDERING INFORMATION Ordering Number
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MPSH10
MPSH10
MPSH10L-x-T92-B
MPSH10G-x-T92-B
MPSH10L-x-T92-K
MPSH10G-x-T92-K
QW-R201-022
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2SA1036K
Abstract: 2SC1623 2SC1623 sot-23 l6 sot23
Text: 2SC1623 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 100 mA
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2SC1623
OT-23
02-Aug-06
02-Mar-06
OT-23
2SA1036K
2SC1623
2SC1623 sot-23
l6 sot23
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 ORDERING INFORMATION Ordering Number
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MPSH10A
MPSH10A
MPSH10AL-x-T92-B
MPSH10AG-x-T92-B
MPSH10AL-x-T92-K
MPSH10AG-x-T92-K
QW-R201-065
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PDF
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1SV70
Abstract: 2SC2734 DSA003637
Text: 2SC2734 Silicon NPN Epitaxial ADE-208-1074 Z 1st. Edition Mar. 2001 Application • UHF frequency converter • Local oscillator, wide band amplifier Outline MPAK 3 1 2 Note: Marking is “GC”. 1. Emitter 2. Base 3. Collector 2SC2734 Absolute Maximum Ratings (Ta = 25°C)
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2SC2734
ADE-208-1074
1SV70
2SC2734
DSA003637
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MARKING SA transistor
Abstract: marking code ER transistor KST1623L6
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit Collector-Base Voltage VcBO 50 V Collector-Emitter Voltage VcEO 40 V Emitter-Base Voltage V ebo 5 .0 V Collector Current
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OCR Scan
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KST1623L3/L4/L5/L6/L7
D02S10S
MARKING SA transistor
marking code ER transistor
KST1623L6
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation
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OCR Scan
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KST1623L3/L4/L5/L6/L7
KST1623O
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PDF
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transistor A 564
Abstract: L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t C h a ra cte ristic Sym b o l Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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OCR Scan
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KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
KST1623L4
KST1823L5
KST1623L6
KST1623L7
KST1623L3
KST1623L4
KST1623L5
transistor A 564
L6 TRANSISTOR
kst1623
L6 MARKING
transistor L7
transistor marking l6
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PDF
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L6 TRANSISTOR
Abstract: transistor mark l6 transistor L7 l5 transistor MARKING l7 l4 transistor marking L6 l7 marking code L6 IC KST1623L6
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation Storage Tem perature
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OCR Scan
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KST1623L3/L4/L5/L6/L7
KST1623L3
KST1623L4
KST1623L5
KST1623L6
KST1623L7
L6 TRANSISTOR
transistor mark l6
transistor L7
l5 transistor
MARKING l7
l4 transistor
marking L6
l7 marking code
L6 IC
KST1623L6
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PDF
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transistor mark l6
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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OCR Scan
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KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
KST1623L4
KST1623L5
KST1623L6
KST1623L7
transistor mark l6
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PDF
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