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    MARKING KN2 Search Results

    MARKING KN2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING KN2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KN2222AS

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KN2222AS MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZGA 1 2 Item Marking Description Device Mark ZGA KN2222AS hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


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    PDF KN2222AS OT-23 KN2222AS

    KN2222S

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KN2222S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZBA 1 2 Item Marking Description Device Mark ZBA KN2222S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


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    PDF KN2222S OT-23 KN2222S

    KN2907AS

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KN2907AS MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZHA 1 2 Item Marking Description Device Mark ZHA KN2907AS hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


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    PDF KN2907AS OT-23 KN2907AS

    KN2907S

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KN2907S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZDA 1 2 Item Marking Description Device Mark ZDA KN2907S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


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    PDF KN2907S OT-23 KN2907S

    2222A

    Abstract: transistor 2222a data sheet transistor KN2222A kn2222a transistor 2222a kn 2222a Kn2222A transistor 2222A2 2222A transistor KN2222A datasheet
    Text: SEMICONDUCTOR KN2222A MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KN 1 2222A 2 816 No. Item 3 Marking Description KN Series Name 2222A Device Name Device Name Lot No. 1998. 6. 23 Revision No : 0 8 Year 0~9 : 1900~1999 16


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    PDF KN2222A 2222A transistor 2222a data sheet transistor KN2222A kn2222a transistor 2222a kn 2222a Kn2222A transistor 2222A2 2222A transistor KN2222A datasheet

    2907A

    Abstract: MARKING 2907A 2907A EQUIVALENT 2907a transistor TO92 package 2907 2907A TO-92 KN2907A kn2907A EQUIVALENT 2907a2
    Text: SEMICONDUCTOR KN2907A MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KN 1 2907A 2 816 No. Item 3 Marking Description KN Series Name 2907A Device Name Device Name Lot No. 1998. 6. 23 Revision No : 0 8 Year 0~9 : 1900~1999 16


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    PDF KN2907A 2907A MARKING 2907A 2907A EQUIVALENT 2907a transistor TO92 package 2907 2907A TO-92 KN2907A kn2907A EQUIVALENT 2907a2

    2222 kn a

    Abstract: KN2222 2222 2222 a 2222 diode marking KN
    Text: SEMICONDUCTOR KN2222 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KN 1 2222 2 816 No. Item 3 Marking Description KN Series Name 2222 Device Name Device Name Lot No. 1998. 6. 23 Revision No : 0 8 Year 0~9 : 1900~1999 16 Week


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    PDF KN2222 2222 kn a KN2222 2222 2222 a 2222 diode marking KN

    2907

    Abstract: a 2907 transistor 2907 KN2907 2907 a
    Text: SEMICONDUCTOR KN2907 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KN 1 2907 2 816 No. Item 3 Marking Description KN Series Name 2907 Device Name Device Name Lot No. 1998. 6. 23 Revision No : 0 8 Year 0~9 : 1900~1999 16 Week


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    PDF KN2907 2907 a 2907 transistor 2907 KN2907 2907 a

    e210882 motherboard manual

    Abstract: manual intel desktop board e210882 manual motherboard d33025 e210882 motherboard manual jumper set e210882 manual motherboard canada ices 003 e210882 Intel Desktop Board E210882 d33025* manual manual intel desktop board d33025 e210882 N232 motherboard manual
    Text: Intel Desktop Board DG41KR Product Guide Order Number: E68225-001 Revision History Revision -001 Revision History First release of the Intel® Desktop Board DG41KR Product Guide Date September 2009 If an FCC declaration of conformity marking is present on the board, the following statement applies:


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    PDF DG41KR E68225-001 e210882 motherboard manual manual intel desktop board e210882 manual motherboard d33025 e210882 motherboard manual jumper set e210882 manual motherboard canada ices 003 e210882 Intel Desktop Board E210882 d33025* manual manual intel desktop board d33025 e210882 N232 motherboard manual

    KN2222AS

    Abstract: KN2222S ZGA SOT23
    Text: SEMICONDUCTOR KN2222S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Low Leakage Current Low Saturation Voltage D : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. 3 G A 2 H : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.


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    PDF KN2222S/AS 150mA, KN2907S/2907AS. KN2222S KN2222AS 10x8x0 KN2222AS KN2222S ZGA SOT23

    KN2222AS

    Abstract: KN2222S
    Text: SEMICONDUCTOR KN2222S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌLow Leakage Current ᴌLow Saturation Voltage H : VCE sat =0.3V(Max.) ; IC=150mA, IB=15mA. 3 G A 2 D : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.


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    PDF KN2222S/AS 150mA, KN2907S/2907AS. KN2222S KN2222AS 10x8x0 KN2222AS KN2222S

    2222A

    Abstract: KN2907S KN2907AS 2222AS
    Text: SEMICONDUCTOR KN2907S/AS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Low Leakage Current Low Saturation Voltage D : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. 3 G A 2 H : VCE(sat)=-0.4V(Max.) ; IC=150mA, IB=-15mA.


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    PDF KN2907S/AS -50nA 150mA, -15mA. KN2222S/2222AS. KN2907S KN2907AS 10x8x0 2222A KN2907S KN2907AS 2222AS

    KN2907AS

    Abstract: KN2907S
    Text: SEMICONDUCTOR KN2907S/AS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Low Leakage Current 2 A H : VCE sat =-0.4V(Max.) ; IC=150mA, IB=-15mA. 3 G Low Saturation Voltage D : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.


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    PDF KN2907S/AS 150mA, -15mA. -50nA KN2222S/2222AS. KN2907S KN2907AS 10x8x0 KN2907AS KN2907S

    zener diode marking code C3 sot23

    Abstract: KN1 SOT-23 sot-23 DIODE marking code D3 marking code C5 sot23 zener marking code C3 sot23 F3 SOT-23 DIODE sot-23 Marking N2 marking code E5 sot23
    Text: WTE POWER SEMICONDUCTORS MMBZ5221B MMBZ5262B Pb 350mW SURFACE MOUNT ZENER DIODE Features Planar Die Construction L 350mW Power Dissipation 2.4 – 51V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application Plastic Material – UL Recognition Flammability


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    PDF MMBZ5221B MMBZ5262B 350mW OT-23 OT-23, MIL-STD-202, zener diode marking code C3 sot23 KN1 SOT-23 sot-23 DIODE marking code D3 marking code C5 sot23 zener marking code C3 sot23 F3 SOT-23 DIODE sot-23 Marking N2 marking code E5 sot23

    Untitled

    Abstract: No abstract text available
    Text: WTE POWER SEMICONDUCTORS MMBZ5221B MMBZ5262B Pb 350mW SURFACE MOUNT ZENER DIODE Features Planar Die Construction L 350mW Power Dissipation 2.4 – 51V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application Plastic Material – UL Recognition Flammability


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    PDF MMBZ5221B MMBZ5262B 350mW OT-23, MIL-STD-202,

    SOT89 MARKING CODE

    Abstract: DXT651 DXT651-13 DXT751
    Text: DXT651 LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DXT751) Ideally Suited for Automated Assembly Processes


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    PDF DXT651 DXT751) OT89-3L J-STD-020C DS31184 SOT89 MARKING CODE DXT651 DXT651-13 DXT751

    Untitled

    Abstract: No abstract text available
    Text: MMBZ5221B MMBZ5262B 350mW SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features  Planar Die Construction      350mW Power Dissipation 2.4V – 51V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application


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    PDF MMBZ5221B MMBZ5262B 350mW OT-23, MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: MMBZ5221BW MMBZ5262BW 200mW SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features  Planar Die Construction      200mW Power Dissipation 2.4V – 51V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application


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    PDF MMBZ5221BW MMBZ5262BW 200mW OT-323, MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: DXT651 60V LOW VCE sat NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DXT751) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


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    PDF DXT651 DXT751) J-STD-020 DS31184

    MARKING KN2

    Abstract: MARKING 06 SOT89 DXT651 DXT651-13 DXT751
    Text: DXT651 60V LOW VCE sat NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DXT751) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


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    PDF DXT651 DXT751) J-STD-020 DS31184 MARKING KN2 MARKING 06 SOT89 DXT651 DXT651-13 DXT751

    Untitled

    Abstract: No abstract text available
    Text: DZT651 LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DZT751) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


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    PDF DZT651 DZT751) OT-223 J-STD-020C MIL-STD-202, DS30809

    DZT651

    Abstract: DZT651-13 DZT751
    Text: DZT651 LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DZT751) Ideally Suited for Automated Assembly Processes


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    PDF DZT651 DZT751) OT-223 J-STD-020C DS30809 DZT651 DZT651-13 DZT751

    KN2907AS

    Abstract: KN2907S KN2907S/2907AS
    Text: SEMICONDUCTOR TECHNICAL DATA KN2907S/AS EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current DIM : ICEx=-50nA Max. ; VCe=-30V, V eb=-0.5V. • Low Saturation Voltage : VCEfeat)=-0.4V(Max.) ; Ic=-150mA, IB=-15mA.


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    PDF KN2907S/AS -50nA -150mA, -15mA. KN2222S/AS. KN2907S KN2907AS 10x8x0 KN2907AS KN2907S/2907AS

    marking EE

    Abstract: KN2222AS KN2222S SOT-23 type name HJ 13002
    Text: SEMICONDUCTOR TECHNICAL DATA KN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current DIM A B : Ic E x -1 0 n A M a x . ; V ce - 6 0 V , V e b (off )-3 V . • Low Saturation Voltage


    OCR Scan
    PDF KN2222S/AS 150mA, KN2907S/2907AS. KN2222S KN2222AS 10x8x0 marking EE KN2222AS SOT-23 type name HJ 13002