6ca DIODE
Abstract: DIODE marking 6CA DIODE 6ca marking 6ca vr 6ca marking 2ca
Text: Central CMUD2836 CMUD2838 TM Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded
|
Original
|
CMUD2836
CMUD2838
OT-523
100mA
12-February
6ca DIODE
DIODE marking 6CA
DIODE 6ca
marking 6ca
vr 6ca
marking 2ca
|
PDF
|
6ca DIODE
Abstract: DIODE 6ca DIODE marking 6CA marking code 18 surface mount diode marking 6ca CMUD2836 marking r4 diode CMUD2838 marking IR 2CA vr 6ca
Text: Central CMUD2836 CMUD2838 TM Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded
|
Original
|
CMUD2836
CMUD2838
CMUD2838
OT-523
100mA
18-March
6ca DIODE
DIODE 6ca
DIODE marking 6CA
marking code 18 surface mount diode
marking 6ca
CMUD2836
marking r4 diode
marking IR 2CA
vr 6ca
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Central CMUD2836 CMUD2838 TM Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded
|
Original
|
CMUD2836
CMUD2838
CMUD2838
OT-523
100mA
|
PDF
|
6ca DIODE
Abstract: DIODE marking 6CA DIODE 6ca CMUD2836 CMUD2838 marking 2ca marking IR 2CA DIODE marking 2CA vr 6ca
Text: CMUD2836 CMUD2838 SURFACE MOUNT DUAL, HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar
|
Original
|
CMUD2836
CMUD2838
CMUD2838
OT-523
CMUD2836
100mA
6ca DIODE
DIODE marking 6CA
DIODE 6ca
marking 2ca
marking IR 2CA
DIODE marking 2CA
vr 6ca
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMUD2836 CMUD2838 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT DUAL, HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar
|
Original
|
CMUD2836
CMUD2838
CMUD2838
OT-523
CMUD2836
100mA
|
PDF
|
6ca DIODE
Abstract: DIODE 6ca DUAL SURFACE MOUNT DIODE DIODE marking 6CA marking 6ca CMUD2836 CMUD2838 marking 2ca
Text: Central CMUD2836 CMUD2838 TM Semiconductor Corp. ULTRAmini SURFACE MOUNT DUAL HIGH SPEED SWITCHING SILICON DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded
|
Original
|
CMUD2836
CMUD2838
CMUD2838
OT-523
100mA
30-August
6ca DIODE
DIODE 6ca
DUAL SURFACE MOUNT DIODE
DIODE marking 6CA
marking 6ca
CMUD2836
marking 2ca
|
PDF
|
DIODE marking 2CA
Abstract: DUAL SURFACE MOUNT DIODE silicon power switching diode diode marking r0
Text: Central CMUD2836 ULTRAmini SURFACE MOUNT DUAL COMMON ANODE HIGH SPEED SWITCHING SILICON DIODE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in
|
Original
|
CMUD2836
OT-523
100mA
15-August
DIODE marking 2CA
DUAL SURFACE MOUNT DIODE
silicon power switching diode
diode marking r0
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P6SMB SERIES Transient Voltage Suppressors 600W 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.180 (4.57) 0.160 (4.06) 0.0 (0.305) 0.012 0.006 (0.152) 0.096 (2.44) 0.084 (2.13) 0.008 (0.203) Max. 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21)
|
Original
|
DO-214AA
2002/95/EC
|
PDF
|
JDH3D01S
Abstract: No abstract text available
Text: JDH3D01S TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01S ○ For wave detection ¾ Unit: mm Small package Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Reverse voltage VR 4 V Forward current IF 25 mA Junction temperature Tj
|
Original
|
JDH3D01S
0024gtyp.
JDH3D01S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ES2AA - ES2JA 2.0AMPS Surface Mount Super Fast Rectifiers SMA/DO-214AC Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain rellef Ideal for automated placement Easy pick and place
|
Original
|
SMA/DO-214AC
J-STD-020D
|
PDF
|
ES2JA F3
Abstract: No abstract text available
Text: ES2AA - ES2JA 2.0AMPS Surface Mount Super Fast Rectifiers SMA/DO-214AC Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain rellef Ideal for automated placement Easy pick and place
|
Original
|
SMA/DO-214AC
J-STD-020D
RS-481
ES2JA F3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Surface Mount Multilayer Ceramic Chip Capacitors SMD MLCCs Capacitor Array, X7R Dielectric, 10 – 200 VDC (Commercial & Automotive Grade) Overview KEMET’s Ceramic Chip Capacitor Array in X7R dielectric is an advanced passive technology where multiple capacitor elements
|
Original
|
|
PDF
|
6ca DIODE
Abstract: marking code 533 DIODE 6ca DIODE marking 6CA marking 6ca ON Semiconductor marking AN
Text: Central CMUD2836 CMUD2838 Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL HIGH SPEED SILICON SWITCHING DIODES DUAL, COMMON ANODE DUAL, COMMON CATHODE MAXIMUM RATINGS: MARKING CODE: 2CA MARKING CODE: 6CA TA=25°C Peak Repetitive Reverse Voltage SYMBOL
|
OCR Scan
|
CMUD2836
CMUD2838
CMUD2838
CPD63
18-March
6ca DIODE
marking code 533
DIODE 6ca
DIODE marking 6CA
marking 6ca
ON Semiconductor marking AN
|
PDF
|
itt 2222a
Abstract: itt 2907A motorola diode cross reference PTZA92 2222a pinout ZTA14 PTZA42 2907A bs33 zta96
Text: MOTOROLA SC XSTRS/R MbE D F b3b?5SH GGTbSlb S • MOTb T ^ b O l ■ V " : SOT-22 ■•••.' , '¿»1%,»* 'f-f » Maximum die size Switching Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector hFE Device <T Marking ton toff v (BR)CEO Min
|
OCR Scan
|
PZT2222A
PZT2907A
PZTA14
BSP52
ZTA14
PZTA64
ZTA64
PTZA42
TZA42
itt 2222a
itt 2907A
motorola diode cross reference
PTZA92
2222a pinout
2907A
bs33
zta96
|
PDF
|
|
GM3Z
Abstract: No abstract text available
Text: SANKEN E L E C T R I C Ï' î U S A HE Rectifier Diodes D | 7^0741 Vrm:100~1000V b □ O D D U 'i b io :1.3~30A h : ' • - T .o V ,c r GM/SG R ating/ Characteristics Absolute Maximum Ratings V rsm V V rm (V) lo (A) 500 200 400 800 1000 600 800 1200 1000
|
OCR Scan
|
EU02A
10days
2nd10days
SFPB-64
GM3Z
|
PDF
|
CTL22S
Abstract: CTB34 ctb-34 CTU-G3DR CTU1S CTUG3DR
Text: SANKEN ELECTRIC U S A 11E D I ? ? 4 1 IVrm : 100— 200V Ultra Fast Recovery Diodes 00001*43 2 I H lo : 5 — 20 A CTL | V rm V lo (A) Tstg CC) Tj CC) Ifsm (A) With 60HzHaNSineWave 100 100 200 200 100 100 200 200 100 100 200 200 Ir (mA) Vf (V) trr Irm
|
OCR Scan
|
CTL-11S
CTL-12S
CTL-21S
CTL-22S
CTL-31S
CTL-32S
CTB-33
CTB-34.
MI-10/15
SFPB-64
CTL22S
CTB34
ctb-34
CTU-G3DR
CTU1S
CTUG3DR
|
PDF
|
EK13 equivalent
Abstract: ek030 ctb-34s Sanken Rectifier GH-3S
Text: SANKEN ELECTRI C U S A F- I M HE Schottky Barrier Diodes D I IV r m : 3 0 — 9 0 V 7 ^ 0 7 4 1 0DDÜ145 b | H lo : 0 .7 — 3 0 A T ' 0 SFPB/AK/EK/RK/FMB/CTB Type N o \ ^ Absolute Maximum Ratings < | Rating/ Characteristics Vrsm V Per c h ip lo (A) If s m
|
OCR Scan
|
CTB-33
CTB-34.
DMI-10/15
SFPB-64
EK13 equivalent
ek030
ctb-34s
Sanken Rectifier
GH-3S
|
PDF
|
MMBD501
Abstract: MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MMBD2837 MBAS16 MBAV70
Text: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Switching Diodes (Dual Unless Otherwise Noted) Diode Pinout: Noted Below Device Marking MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD914 MBAS16 MBAL99 MMBD6050 MBAV99 MMBD7000 A2
|
OCR Scan
|
OT-23
OT-23
MMBD2836
MBAW56
MMBD2835
MBAV74
MMBD2838
MBAV70
MMBD2837
MMBD6100
MMBD501
MMBV2098
MBAV99
A5 sot-23 single DIODE
MMBV105G
MMBV2097
A5 sot-23 DIODE
MBAS16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LH53BV8600N 8M Mask ROM Model No.: LH5D86xx Spec No.: EL093164 Issue Date: May 8, 1998 SHARP LH53BV8600N •Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited
|
OCR Scan
|
LH53BV8600N
LH5D86xx)
EL093164
OP44-P-600
AA1050
CV648
|
PDF
|
marking q815
Abstract: No abstract text available
Text: H Y U N D A I - « H Y 512260 128Kx16. CMOS DRAM wlth/2CAS DESCRIPTION This family is a 2M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Independent read and write of upper and
|
OCR Scan
|
128Kx16.
16-bit
16-bits
marking q815
|
PDF
|
Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY514260B 256KX16, CMOS DRAM w ith /2CAS DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60
|
OCR Scan
|
HY514260B
256KX16,
16-bit
16-bits
256Kx16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TAIWAN SEMICONDUCTOR [ s Pb RoHS COMPLIANCE ES2AA - ES2JA 2.0 AMPS. Surface Mount Super Fast Rectifiers S MA/DO-214AC .062 1.58 .050(1.27) .111(2.83) .090(2.29) Ï Ï I Features 4-v-v❖ -v4-y4-v•> UL R ecognized F ile # E -326243 Glass passivated junction chip
|
OCR Scan
|
/DO-214
E-326243
|
PDF
|
marking code GIF
Abstract: NMB MANUFACTURER DDEE177 LH53C8600N CD0-D15
Text: SHARP LH53C8S00N C L O N T E N T S General Description P. 2 2. Features P. 2 3. Block Diagrai P. 3 4. Pin Connections P. 4 5. Pin Description P. 4 6. Absolute laxiauatatings P. 5 7. Operating Kanges P. 5 î, P.C. Electrical Characteristics P.5 9. A. C. Electrical Characteristics
|
OCR Scan
|
LH53C8
002217b
LHKJSxxQJ53C3600H)
S0P44-P-800
AA10S0
OP600SPK-A2
CV64S
marking code GIF
NMB MANUFACTURER
DDEE177
LH53C8600N
CD0-D15
|
PDF
|
CTU1S
Abstract: CTB34 ad lot id CTB-34 CTU22S
Text: sanken El e c t r i c u s a HE Fast Recovery Diodes V rm V Type N a \ ^ 1350 CTU-G2DR 1350 CTU-G3DR 150 FMU-11S , R FMU-12S, R 250 450 FMU-14S, R 650 FMU-16S, R 150 FMU-21S, R 250 FMU-22S, R FMU-24S, R 450 FMU-26S, R L 650 150 FMU-31S, R 250 FMU-32S, R 450
|
OCR Scan
|
0GQO133
FMU-11S
FMU-12S,
FMU-14S,
FMU-16S,
FMU-21S,
FMU-22S,
FMU-24S,
FMU-26S,
FMU-31S,
CTU1S
CTB34
ad lot id
CTB-34
CTU22S
|
PDF
|