KDS193
Abstract: marking F3 sot23
Text: SEMICONDUCTOR KDS193 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 F3 1 2 Item Marking Description Device Mark F3 KDS193 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KDS193
OT-23
KDS193
marking F3 sot23
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 1SS193 Switching Diode FEATURES y Low forward voltage y Fast reverse recovery time 1 MARKING: F3 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit VRM 85 V
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OT-23
OT-23
1SS193
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PDF
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1SS193
Abstract: No abstract text available
Text: 1SS193 Switching Diodes SOT-23 1. ANODE 2. N.C. 3. CATHODE Features Low forward voltage : VF 3 =0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: F3 Dimensions in inches and (millimeters) Maximum Ratings @TA=25℃ Parameter Symbol Limits
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1SS193
OT-23
100mA
1SS193
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PDF
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f3 diode sot23
Abstract: marking code F3 diode MARKING F3 marking f3 sot-23
Text: MMBD193 SILICON EPITAXIAL PLANAR DIODE Ultra High Speed Switching Application 3 2 1 Marking Code: F3 SOT-23 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Peak Forward Current IFM
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Original
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MMBD193
OT-23
100mA
f3 diode sot23
marking code F3
diode MARKING F3
marking f3 sot-23
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PDF
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marking code F3
Abstract: diode MARKING F3
Text: MMBD193 SILICON EPITAXIAL PLANAR DIODE Ultra High Speed Switching Application 3 2 1 Marking Code: F3 SOT-23 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Peak Forward Current IFM
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Original
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MMBD193
OT-23
100mA
marking code F3
diode MARKING F3
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PDF
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ISS193
Abstract: ISS193 F3 marking f3 sot-23 1SS193
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS193 Switching DIODES SOT-23 FEATURES y Low forward voltage : VF 3 =0.9V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1. ANODE MARKING: F3 2. N.C. 3. CATHODE Maximum Ratings @TA=25℃
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Original
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OT-23
1SS193
OT-23
100mA
ISS193
ISS193
ISS193 F3
marking f3 sot-23
1SS193
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PDF
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F5 MARK
Abstract: marking f3 sot-23 KST1009F1 KST1009F2 KST1009F3 KST1009F4 KST1009F5 marking code F3
Text: KST1009F1/F2/F3/F4/F5 KST1009F1/F2/F3/F4/F5 AM/FM RF Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage
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Original
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KST1009F1/F2/F3/F4/F5
OT-23
F5 MARK
marking f3 sot-23
KST1009F1
KST1009F2
KST1009F3
KST1009F4
KST1009F5
marking code F3
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PDF
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available
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2N2894AC1
-200mA
360mW
88mW/Â
2N2894AC1B
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PDF
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available
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2N4209C1A
2N4209C1B
-50mA
360mW
05mW/Â
2N4209C1B
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PDF
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2N2894AC1
Abstract: LE17 MIL-PRF19500 QR217 marking l3d sot23
Text: HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available
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Original
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2N2894AC1
-200mA
360mW
2N2894AC1B
2N2894AC1
LE17
MIL-PRF19500
QR217
marking l3d sot23
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PDF
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MMSZ5243
Abstract: N4 SOT23
Text: 500mW ZENER DIODES MMSZ52 SERIES • New Product SOT23 Pkg. TA = 25˚C The latest comprehensive data to fully support these parts is readily available. TAPE & REEL SPECIFICATIONS SOT23 Tape Width Reel Diameter Quantity 8mm 178mm 3,000 8mm 330mm 10,000 Nom.
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500mW
MMSZ52
MMSZ5225
MMSZ5226
MMSZ5227
MMSZ5228
MMSZ5229
MMSZ5230
MMSZ5231
MMSZ5232
MMSZ5243
N4 SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: 1SS193 SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features High Conductance Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications Plastic Material – UL Recognition Flammability
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1SS193
OT-23,
MIL-STD-202,
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BFR92A
Abstract: bfr92
Text: SMALL SIGNAL NPN RF TRANSISTOR BFR92, BFR92A • Silicon Planar Epitaxial NPN Transistor • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Suitable For UHF Applications Up To 1.0GHz • Space Level and High-Reliability Screening Options Available
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BFR92,
BFR92A
250mW
BFR92AC1B-JQRS
BFR92A
bfr92
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PDF
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available
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Original
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2N4209C1A
2N4209C1B
-50mA
360mW
05mW/Â
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PDF
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CV 203
Abstract: marking code C9 F3 SOT23-3
Text: KV1430 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • Excellent Linearity CV Curve ■ Large Capacitance Ratio (A = 3.70 minimum) with Very Low Series Resistance ■ Two Diodes in a Miniature Package (SOT23-3) ■ Very Small Capacitance Deviation at Tape/Reel
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KV1430
OT23-3)
KV1430
OT2375
IC-xxx-KV1471E
0798O0
CV 203
marking code C9
F3 SOT23-3
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PDF
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BS850
Abstract: BSS84 DS11402 SOT23 marking GF
Text: BS850 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features • · · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown Surface Mount Package Ideally Suited for Automatic Assembly DISCONTINUED,
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BS850
BSS84
OT-23,
MIL-STD-202
OT-23
DS11402
BS850
BSS84
SOT23 marking GF
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PDF
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Untitled
Abstract: No abstract text available
Text: BS850 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR DISCONTINUED, FOR NEW DESIGN USE BSS84 Features • · · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown Surface Mount Package Ideally Suited
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BS850
BSS84
OT-23
OT-23,
MIL-STD-202
BSS84
DS11402
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 25 5 50 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage
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KST1009F1/F2/F3/F4/F5
OT-23
KST1009F1
KST1009F2
KST1009F3
KST1009F4
KST1009F5
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PDF
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marking F3 sot-23
Abstract: Marking f3 diode MARKING F3 1SS193 SMD marking F3
Text: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION 1SS193 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VF 3 = 0.9 V(Typ.) 0.55 Small Package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast Reverse Recovery Time :trr = 1.6 ns(Typ.)
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Original
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1SS193
OT-23
marking F3 sot-23
Marking f3
diode MARKING F3
1SS193
SMD marking F3
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PDF
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Untitled
Abstract: No abstract text available
Text: Product specification 1SS193 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VF 3 = 0.9 V(Typ.) 0.55 Small Package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast Reverse Recovery Time :trr = 1.6 ns(Typ.) +0.05
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1SS193
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bOE » • 7^4142 TRANSISTORS 0Q11524 *i27 « S r i G K FUNCTION GUIDE SOT-23 Type Transistors Continued Condition D evio and Polarity (Marking) NPN VcEO (V) PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC)
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OCR Scan
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0Q11524
OT-23
KST1009F2
KST1009F3
KST1009F4
KST1009F5
KST4124
KST4126
BCW29
O-92S
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PDF
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KSC3488
Abstract: KSC853 KSA953 KSC815
Text: FUNCTION GUIDE TRANSISTORS SOT-23 Type Transistors Continued Condition Device and Polarity (Marking) NPN lc V ce lc (V) (A) (V) (mA) MIN MAX PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) KST4126(C3) BCW29(C1) BCW31(D1) 1.1.2 V cE<*at), VBE tsatX V )
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OCR Scan
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OT-23
KST1009F2
KST1009F3
KST1009F4
KST1009F5
KST4124
KST4126
BCW29
BCW31
O-92S
KSC3488
KSC853
KSA953
KSC815
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PDF
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KSC815
Abstract: No abstract text available
Text: TRANSISTORS FUNCTION GUIDE SOT-23 Transistors Continued Device and Polarit(Marking) Condition NPN PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) BCW 29(Ct) BCW31(D1) 1.1.2 (V) 25 25 25 25 25 20 20 V ce lc (A) (V) 3 3 3 3 1 (mA) MIN
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OCR Scan
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OT-23
KST1009F2
KST1009F3
KST1009F4
KST1009F5
KST4124
BCW31
O-92S
KSA1150
KSA1378
KSC815
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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OCR Scan
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KST1009F1/F2/F3/F4/F5
OT-23
KST1009F1
KST1009F2
KST1009F3
KST1009F4
KST1009F5
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PDF
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