EN4495
Abstract: 2SA1338 2SC3392 FP202 Collector 5v npn TRANSISTOR 2097a fp2021 marking 202
Text: Ordering number:EN4495 FP202 PNP/NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications Features Package Dimensions • Composite type with 2 transistors PNP and NPN contained in one package facilitating high-density mounting. · The FP202 is formed with a chip being equivalent to
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EN4495
FP202
FP202
2SA1338
2SC3392,
FP202]
EN4495
2SC3392
Collector 5v npn TRANSISTOR
2097a
fp2021
marking 202
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fp104
Abstract: No abstract text available
Text: Ordering number:EN4655 FP104 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2devices PNP transistor and Shottky barrier diode contained in one package,
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EN4655
FP104
FP104
2SA1729
SB05-05CP
FP104]
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marking EB 202 diode
Abstract: 2SA1729 FP104 SB05-05CP marking EB 202 transistor EN4655
Text: Ordering number:EN4655 FP104 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2devices PNP transistor and Shottky barrier diode contained in one package,
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EN4655
FP104
FP104
2SA1729
SB05-05CP
FP104]
marking EB 202 diode
marking EB 202 transistor
EN4655
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Untitled
Abstract: No abstract text available
Text: PIC10F200/202/204/206 6-Pin, 8-Bit Flash Microcontrollers Devices Included In This Data Sheet: • PIC10F200 • PIC10F204 • PIC10F202 • PIC10F206 Low-Power Features/CMOS Technology: • Operating Current: - < 175 A @ 2V, 4 MHz, typical • Standby Current:
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PIC10F200/202/204/206
PIC10F200
PIC10F204
PIC10F202
PIC10F206
12-Bit
Wid60-4-227-8870
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marking EB 202 transistor
Abstract: EB 203 D
Text: Central CMPT2484 Sem iconductor Corp. NPN SILICON LOW NOISE TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CM PT2484 type is an N PN silicon low noise transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise
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CMPT2484
CMPT2484
OT-23
CB357
200Hz
marking EB 202 transistor
EB 203 D
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marking EB 202 transistor
Abstract: 2SC4672 transistor 2SC4672 ZE TRANSISTOR MARKING
Text: 2SC4672 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package 2SC4672 (M PT3) +0.2 4 .5 —0 1 • • • package marking: 2SC4672; DK-fr, where ★ is hFE code 1.6 * 0.1 zE L if low collector saturation voltage,
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2SC4672
OT-89,
SC-62)
2SC4672;
2SC4672
marking EB 202 transistor
transistor 2SC4672
ZE TRANSISTOR MARKING
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marking H3t sot23
Abstract: BSR15 marking T7
Text: r z z SCS-THOM SON Ä T# MDœmiICTfôMIl] BSR15 BSR16 SMALL SIGNAL PNP TRANSISTORS Type Marking BSR15 T7 BSR16 T8 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION
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BSR15
BSR16
BSR16
BSR13
BSR14
OT-23
BSR15/BSR16
marking H3t sot23
marking T7
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Untitled
Abstract: No abstract text available
Text: Temic BFP181T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features
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BFP181T
pr-96
17-Apr-96
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Untitled
Abstract: No abstract text available
Text: DIL BSR20 BSR20A SILICON P-N -P HIGH-VOLTAGE TRANSISTORS P-N -P high-voltage small-signal transistors Marking BSR20 = T35 BSR20A = T36 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 038 0.70 0.50 3 Pin configuration 1 = BASE 2 = EMITTER 3 = CO LLECTOR
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BSR20
BSR20A
BSR20
250pA;
BSR20A
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41 BF transistor
Abstract: transistor BF 235 transistor bf 254 869S transistor marking code 41 BF BF869S transistor bf 871s BF871S bf869s Transistor transistor bf 44
Text: a l TELEFUNKEN ELECTRONIC 17E D • a^EDD^b 000^427 4 ■ AL6G BF 869 S BF 871 S IN electronic Cr»«tiv« Technologies r-33-öS* Silicon NPN Epitaxial Planar RF Transistors Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage
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r-33-Ã
BF869SABF871
T0126
15A3DIN
41 BF transistor
transistor BF 235
transistor bf 254
869S
transistor marking code 41 BF
BF869S
transistor bf 871s
BF871S
bf869s Transistor
transistor bf 44
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marking 202
Abstract: fp104
Text: Ordering number : E N 4655 FP104 No. 4655 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC/DC Converter Applications F eatu res • Composite type with 2 devices PNP transistor and Schottky barrier diode contained in one package,
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FP104
FP104
2SA1729
SB05-05CP
250mm2
100mA
marking 202
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2SD1164Z
Abstract: 2SD1164-Z MEI-1202
Text: DATA SHEET NEC SILICON TRANSISTOR 2SD1164-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2S D 1164-Z is designed fo r Low Frequency A m p lifie r and PACKAGE DIMENSIONS in millimeters S w itching, especially in Hybrid Integrated Circuits. FEATURES •
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2SD1164-Z
2SD1164-Z
IEI-1209)
2SD1164Z
MEI-1202
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2SC3773
Abstract: SANYO SS 1001
Text: SANYO SEMICONDUCTOR CORP 25E D 7 ‘1c1 7 0 7 b 0 0 G b_ö3 1 T T -3/ -/7 2SC3773 NPN Epitaxial Pianar Silico n Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1946B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band
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n707b
2SC3773
1946B
2SC3773
SANYO SS 1001
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PA 2027A
Abstract: 2SA1624 t-31-21 Sanyo A 3121 IC
Text: SANYO SEMICONDUCTOR CORP 32E » 7Tì707Li ODOflflS? S T ~ 3 / - 2 - f P N P Epitaxial Planar S ilico n Transistor Color T V Chroma Output, High-Voltage Driver Applications 3I03A F e a tu re s • High breakdown voltage • Small reverse transfer capacitance and excellent high frequency characteristics
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3I03A
T-91-20
SC-43
PA 2027A
2SA1624
t-31-21
Sanyo
A 3121 IC
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transistor NEC D 822 P
Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters
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2SC4226
2SC4226
SC-70
2SC4226-T1
2SC4226-T2
transistor NEC D 822 P
transistor number D 2498
702 mini transistor
NEC D 822 P
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain •
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2SC5015
2SC5015-T1
2SC5015-T2
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CT 1975 sam
Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the
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2SC4570
2SC4570-T1
CT 1975 sam
transistor NEC D 588
NEC 2561 LE 401
zo 607 p 408
NEC 2561 de
nec 2561 Q 634
date sheet ic 7483
C4570
CT 1975 - sam
T72 marking
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transistor a719
Abstract: A719 4392 ic equivalent 2N3904
Text: MIL-S-19500/529 EL 10 May 1978 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3904 This specification is approved for use by the Electronics Command, Department of the Army, and is available for use by all Departments and Agencies of the Department of Defense.
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MIL-S-19500/529
2N3904
MIL-S-19500/
MIL-S-19500.
MIL-S-19500
5961-A719)
transistor a719
A719
4392 ic equivalent
2N3904
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
4570-T
PACK878
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928 606 402 00
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5008
2SC5008
928 606 402 00
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NEC IC D 553 C
Abstract: nec 2741 702 mini transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.
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2SC4226
2SC4226
SC-70
2SG4226-T1
NEC IC D 553 C
nec 2741
702 mini transistor
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transistor 1211
Abstract: transistor su 312 transistor zo 109
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
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2SC5005
2SC5005
Collect69
transistor 1211
transistor su 312
transistor zo 109
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3563 1231
Abstract: transistor NEC B 617 nec d 1590
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain
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2SC5015
2SC5015-T1
2SC5015-T2
3563 1231
transistor NEC B 617
nec d 1590
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IC SEM 2105
Abstract: 3771 nec
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2SC5008
2SC5008
IC SEM 2105
3771 nec
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