diode marking code YF
Abstract: diode marking YF diode 30 YF marking code YF diode marking YF marking code 024 sod Diode yf rectifying a sine wave marking bp 30 yf
Text: SD0103WS SILICON SCHOTTKY BARRIER DIODE Features • Low forward voltage drop and suitable for high effifiency rectifying • Ultra small resin package is suitable for high density surface mounting and high speed assembly PINNING DESCRIPTION PIN 1 Cathode
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SD0103WS
OD-323
OD-323
diode marking code YF
diode marking YF
diode 30 YF
marking code YF diode
marking YF
marking code 024 sod
Diode yf
rectifying a sine wave
marking bp
30 yf
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diode marking code YF
Abstract: diode 30 YF diode marking YF marking code YF diode marking YF diode marking code YF 30
Text: SD0103WS SILICON SCHOTTKY BARRIER DIODE Features • Low forward voltage drop and suitable for high effifiency rectifying • Ultra small resin package is suitable for high density surface mounting and high speed assembly PINNING DESCRIPTION PIN 1 Cathode
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SD0103WS
OD-323
OD-323
diode marking code YF
diode 30 YF
diode marking YF
marking code YF diode
marking YF
diode marking code YF 30
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diode marking code YF
Abstract: bzx84c MARKING CODE YA BZX84C56 diode marking sew diode marking YF marking code YF diode marking YF xf 375 marking code YK
Text: BZX84C…SEW Series SILICON PLANAR ZENER DIODES 3 1 2 1. Anode 3. Cathode Absolute Maximum Ratings Ta = 25 C O Parameter Symbol Value Unit PD 200 mW Tj ,TS - 55 to + 150 Power Dissipation Operating Junction and Storage Temperature Range C O Electrical Characteristics ( Ta = 25 OC unless otherwise noted, VF < 0.9 V at IF = 10 mA)
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BZX84C.
BZX84C2V4SEW
BZX84C2V7SEW
BZX84C3V0SEW
BZX84C47SEW
BZX84C51SEW
BZX84C56SEW
BZX84C62SEW
BZX84C68SEW
BZX84C75SEW
diode marking code YF
bzx84c
MARKING CODE YA
BZX84C56
diode marking sew
diode marking YF
marking code YF diode
marking YF
xf 375
marking code YK
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15W ZENER DIODES
Abstract: XD 105 94V-0 colour code zener
Text: 1.5W ZENER DIODES SMZJ SERIES • LOW ZENER IMPEDANCE AND LOW REGULATION FACTOR • UL 94V-0 PLASTIC PACKAGE ACCEPTS HIGH TEMP. SOLDERING: 250˚C FOR 10s AT TERMINALS SMZJ SERIES Max. ratings and characteristics @ 25˚C unless specified PM Av : 1.5W @ 75˚C
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SMZJ3789B
SMZJ3790B
SMZJ3791B
SMZJ3792B
SMZJ3793B
SMZJ3794B
SMZJ3809B
178mm
330mm
15W ZENER DIODES
XD 105 94V-0
colour code zener
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smd code Yj 33
Abstract: smd code marking yc 440 TZT3V6CW tzt9v1 TZT22CW TZT33AW zener smd marking d47 d82 smd smd marking YK smd marking YB
Text: SMD Zener Diodes Three Terminals - 300mW 300mW Part No. TZT3V9AW TZT4V3AW TZT4V7AW TZT5V1AW TZT5V6AW TZT6V2AW TZT6V8AW TZT7V5AW TZT8V2AW TZT9V1AW TZT10AW TZT11AW TZT12AW TZT13AW TZT15AW TZT16AW TZT18AW TZT20AW TZT22AW TZT24AW TZT27AW TZT30AW TZT33AW TZT36AW
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300mW
TZT10AW
TZT11AW
TZT12AW
TZT13AW
TZT15AW
TZT16AW
TZT18AW
TZT20AW
smd code Yj 33
smd code marking yc 440
TZT3V6CW
tzt9v1
TZT22CW
TZT33AW
zener smd marking d47
d82 smd
smd marking YK
smd marking YB
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Untitled
Abstract: No abstract text available
Text: DF2S8.2CT ESD Protection Diodes Silicon Epitaxial Planar DF2S8.2CT 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.
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IEC61000-4-2)
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Untitled
Abstract: No abstract text available
Text: DF2S8.2CT ESD Protection Diodes Silicon Epitaxial Planar DF2S8.2CT 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.
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IEC61000-4-2)
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YG MARKING CODE
Abstract: BZX84C2V4 marking Z2 28 sot23 YG MARKING CODE SOT23 zener diode zg 36 diode marking code YF component marking Y1 sot23 MARKING CODE zh sot23
Text: BZX84C2V4 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE Features Mechanical Data • • • • • • • • • Planar Die Construction 350mW Power Dissipation Zener Voltages from 2.4V - 51V Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2
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BZX84C2V4
BZX84C51
350mW
AEC-Q101
J-STD-020
MIL-STD-202,
DS18001
YG MARKING CODE
marking Z2 28 sot23
YG MARKING CODE SOT23
zener diode zg 36
diode marking code YF
component marking Y1 sot23
MARKING CODE zh sot23
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Untitled
Abstract: No abstract text available
Text: BZX84C2V4 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE Features Mechanical Data • • • • • • • • • Planar Die Construction 350mW Power Dissipation Zener Voltages from 2.4V - 51V Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2
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BZX84C2V4
BZX84C51
350mW
AEC-Q101
J-STD-020
MIL-STD-202,
DS18001
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TPC6107
Abstract: No abstract text available
Text: TPC6107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIV TPC6107 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • • Low drain-source ON resistance: R DS (ON) = 40 mΩ (typ.)
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TPC6107
TPC6107
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Untitled
Abstract: No abstract text available
Text: BZX84C2V4 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE Features Mechanical Data • Planar Die Construction 350mW Power Dissipation Zener Voltages from 2.4V - 51V Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
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BZX84C2V4
BZX84C51
350mW
J-STD-020
MIL-STD-202,
AEC-Q101
DS18001
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Untitled
Abstract: No abstract text available
Text: BZX84C2V4 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE Features Mechanical Data • Planar Die Construction • • 350mW Power Dissipation • • Zener Voltages from 2.4V - 51V Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
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BZX84C2V4
BZX84C51
350mW
J-STD-020
MIL-STD-202,
AEC-Q101
DS18001
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International Semiconductor,Inc
Abstract: se b2 sae j1850 pwm 68HC05 68HC05V12 J1850 M68HC05 MC68HC05V12 The scheme of HF power amplifier FET Freescale Se 211se
Text: Freescale Semiconductor, Inc. DU LE SE MIC ON General Release Specification CSIC System Design Group Austin, Texas AR CH IVE DB YF RE ES CA R E Q U I R E D December 10, 1996 For More Information On This Product, Go to: www.freescale.com N O N - D I S C L O S U R E
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68HC05V12
HC05V12GRS/D
International Semiconductor,Inc
se b2
sae j1850 pwm
68HC05
68HC05V12
J1850
M68HC05
MC68HC05V12
The scheme of HF power amplifier FET Freescale Se
211se
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tpc8020
Abstract: TPC8020-H
Text: TPC8020-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High-Speed U-MOSIII TPC8020-H High-Speed and High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package
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TPC8020-H
tpc8020
TPC8020-H
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZDxxxG Series Silicon planar type For constant voltage, constant current, waveform clipper and surge absorption circuit • Features ■ Package • Low noise type ■ Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
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Untitled
Abstract: No abstract text available
Text: SMD Transient Voltage Suppressor SMD Diodes Specialist TV04A5V0-HF Thru. TV04A171-HF Working Peak Reverse Voltage: 5.0 to 170 Volts Power Dissipation: 400 Watts RoHS Device Features DO-214AC SMA -Halogen free. -Ideal for surface mount applications. 0.180(4.57)
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TV04A5V0-HF
TV04A171-HF
DO-214AC
DO-214AC,
QW-JTV01
BTV04A-HF
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TPCP8101
Abstract: No abstract text available
Text: TPCP8101 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U-MOS III TPCP8101 Notebook PC Applications Portable Equipment Applications Unit: mm 0.33±0.05 0.05 M A Small footprint due to small and thin package • • Low drain-source ON-resistance: R DS (ON) = 24 mΩ (typ.)
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TPCP8101
TPCP8101
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TPC8016-H
Abstract: No abstract text available
Text: TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High speed U-MOS III TPC8016-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package
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TPC8016-H
TPC8016-H
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diode marking code YF
Abstract: MAZD360G0L
Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZDxxxG Series Silicon planar type M Di ain sc te on na tin nc ue e/ d For constant voltage, constant current, waveform clipper and surge absorption circuit • Features ue pl d in
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2002/95/EC)
diode marking code YF
MAZD360G0L
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Diode SMA marking code ye
Abstract: smd diode marking sG 13 DO-214AC diode marking SD smd code marking YL
Text: Comchip SMD Transient Voltage Suppressor SMD Diode Specialist TV04A5V0-HF Thru. TV04A441-HF Working Peak Reverse Voltage: 5.0 to 440 Volts Power Dissipation: 400 Watts RoHS Device Halogen Free SMA/DO-214AC Features - Glass passivated chip. 0.179 4.55 0.162(4.10)
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TV04A5V0-HF
TV04A441-HF
SMA/DO-214AC
QW-JTV01
Diode SMA marking code ye
smd diode marking sG 13
DO-214AC diode marking SD
smd code marking YL
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smd marking Yd
Abstract: ta 8880 bn st smd marking code VU smd marking YF cm 8600 c smd HF DO-214AC marking code KG DO-214AC YS DO-214AC marking code VE DO-214AC smd marking BG
Text: SMD Transient Voltage Suppressor SMD Diodes Specialist TV04A5V0-HF Thru. TV04A441-HF Working Peak Reverse Voltage: 5.0 to 440 Volts Power Dissipation: 400 Watts RoHS Device Features DO-214AC SMA -Halogen free. -Ideal for surface mount applications. 0.179(4.55)
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TV04A5V0-HF
TV04A441-HF
DO-214AC
DO-214AC,
MIL-STD-750,
QW-JTV01
smd marking Yd
ta 8880 bn
st smd marking code VU
smd marking YF
cm 8600 c smd
HF DO-214AC
marking code KG DO-214AC
YS DO-214AC
marking code VE DO-214AC
smd marking BG
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Untitled
Abstract: No abstract text available
Text: SMZG3788B thru SMZG3809B www.vishay.com Vishay General Semiconductor Surface Mount Power Voltage-Regulating Diodes FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor
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SMZG3788B
SMZG3809B
J-STD-020,
DO-215AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAR 64-07 Silicon PIN Diode • • • • High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz Low resistance and short carrier lifetime For frequencies up to 3 GHz Type BAR64-07 Ordering Code tape and reel
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BAR64-07
Q62702-A1044
OT-143
flE35bG5
Q120EEÃ
235bQ
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single D iode OUTLINE Package : 1F m tm D1FL40 Unit-mm Weight 0.058g Typ i) 400V 0.8A / Ccilhode mark NÉ '4 h Feature • /J v P S M D • Small SMD • ß y - rx • Low Noise • trr=50ns • trr=50ns tt 5 k . ii Type No.
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D1FL40
D1FL40
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