ph 41 zener diode
Abstract: J150A 13.8 8w zener diode GHM DIODE marking code SM diode Diode GHM GGR diode sg 82 do-214aB marking ghm J78A
Text: SURFACE MOUNT TVS & Zener Diodes TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
|
Original
|
DO-214AC
C3B05
ph 41 zener diode
J150A
13.8 8w zener diode
GHM DIODE
marking code SM diode
Diode GHM
GGR diode
sg 82 do-214aB
marking ghm
J78A
|
PDF
|
marking code SM diode
Abstract: GGV diode GGT DIODE marking SM 98 tvs diode sma nu GHM 25 DIODE GHM DIODE ph 41 zener diode ggr 86 176/Diode Zener C 47 pH
Text: SURFACE MOUNT TVS & Zener Diodes TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
|
Original
|
DO-214AC
C3B05
marking code SM diode
GGV diode
GGT DIODE
marking SM 98
tvs diode sma nu
GHM 25 DIODE
GHM DIODE
ph 41 zener diode
ggr 86
176/Diode Zener C 47 pH
|
PDF
|
bu 3 GDG 125
Abstract: marking CODE smb J36 diode 13.8 8w zener diode DO-214A sma marking sm RG DO-214AA smj58 24 DO-214A bu 450 GDF diode gde 61 81g diode
Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
|
Original
|
C398BB02
C398BB03
bu 3 GDG 125
marking CODE smb J36 diode
13.8 8w zener diode
DO-214A sma
marking sm RG DO-214AA
smj58
24 DO-214A
bu 450 GDF
diode gde 61
81g diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . AND TEC I INNOVAT O L OGY SMC3K Series N HN Diodes O 19 62-2012 Diodes - TransZorb Bi-Directional TVS Surface-Mount Bi-Directional Transient Voltage Suppressors Feature High Surge Capability to 3 kW in SMC DO-214AB Package
|
Original
|
DO-214AB
AEC-Q101
SMC3K22CA-M3/9A
SMC3K22CAHM3/57
SMC3K22CAHM3/9A
VMN-PT0344-1212
|
PDF
|
VISHAY MARKING SG
Abstract: S07D-GS08 s07j Do219AB
Text: S07B, S07D, S07G, S07J, S07M Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • • • • • For surface mounted applications Low profile package Ideal for automated placement Glass passivated High temperature soldering: 260 °C/10 s
|
Original
|
AEC-Q101
2002/95/EC
2002/96/EC
DO-219AB
GS18/10K
GS08/3K
S07B-GS18
S07B-GS08
S07D-GS18
S07D-GS08
VISHAY MARKING SG
s07j Do219AB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S07B / 07D / 07G / 07J / 07M Vishay Semiconductors Small Signal Fast Switching Diode, High Voltage Features • • • • • For surface mounted applications Low profile package e3 Ideal for automated placement Glass passivated High temperature soldering:
|
Original
|
2002/95/EC
2002/96/EC
DO-219AB
S07B-GS18
S07B-GS08
S07D-GS18
S07D-GS08
S07G-GS18
S07G-Gd
D-74025
|
PDF
|
s07j Do219AB
Abstract: VISHAY MARKING SG vishay sj 96 VISHAY MARKING SJ vishay diode MARKING CODE sg DO219AB S07B S07D S07G S07J
Text: S07B, S07D, S07G, S07J, S07M Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • • • • • For surface mounted applications Low profile package Ideal for automated placement Glass passivated High temperature soldering: 260 °C/10 s
|
Original
|
AEC-Q101
2002/95/EC
2002/96/EC
DO219AB
GS18/10K
GS08/3K
S07B-GS18
S07B-GS08
18-Jul-08
s07j Do219AB
VISHAY MARKING SG
vishay sj 96
VISHAY MARKING SJ
vishay diode MARKING CODE sg
DO219AB
S07B
S07D
S07G
S07J
|
PDF
|
DIODE smd marking 821
Abstract: smd diode marking sm 34 smd diode 6F MCC SMD DIODE Diode smd code sm 97 diode SMD CODE sm 17 smd marking BLD Diode smd marking 44 st smd diode marking code marking 501 sod323
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB164 VHF variable capacitance diode Product specification 1997 Dec 17 Philips Semiconductors Product specification VHF variable capacitance diode BB164 FEATURES DESCRIPTION • High linearity The BB164 is a planar technology
|
Original
|
M3D049
BB164
OD323
BB164
DIODE smd marking 821
smd diode marking sm 34
smd diode 6F
MCC SMD DIODE
Diode smd code sm 97
diode SMD CODE sm 17
smd marking BLD
Diode smd marking 44
st smd diode marking code
marking 501 sod323
|
PDF
|
vishay diode MARKING CODE sg
Abstract: No abstract text available
Text: S07B, S07D, S07G, S07J, S07M Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • • • • • For surface mounted applications Low profile package Ideal for automated placement Glass passivated High temperature soldering: 260 °C/10 s
|
Original
|
AEC-Q101
2002/95/EC
2002/96/EC
DO-219AB
GS18/10K
GS08/3K
S07B-GS18
S07B-GS08
11-Mar-11
vishay diode MARKING CODE sg
|
PDF
|
diode marking H2
Abstract: AZ MARKING CODE diode marking code 96 DIODE marking 96
Text: DIODE ARRAYS MicrosemiCorp. y SANTA ANA, CA The diod e experts j / SCOTTSDALE, A Z For more information call: 602 941-6300 Features These p ro d u c ts a re d e sig n e d f o r d a ta lin e p ro te c tio n a t th e P.C. b o a rd level as w e ll as f o r O ih e r a p p lic a tio n s in c lu d in g : cam eras, sm a rt cards, e tc. w h ic h re q u ire
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by M1MA151KT1/D SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the S C -5 9 package which is
|
OCR Scan
|
M1MA151KT1/D
M1MA151KT1
M1MA152KT1
M1MA151/2KT1
inch/3000
M1MA151/2KT3
inch/10
SC-59
318D-03
SC-59
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by M1MA151WAT1/D SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diodes M1MA151WAT1 M1MA152WAT1 These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the S C -59
|
OCR Scan
|
M1MA151WAT1/D
M1MA151WAT1
M1MA152WAT1
M1MA151/2WAT1
inch/3000
M1MA151/2WAT3
inch/10
SC-59
318D-03
SC-59
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by M1MA151AT1/D SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the S C -5 9 package which is
|
OCR Scan
|
M1MA151AT1/D
M1MA151/2AT1
inch/3000
M1MA151/2AT3
inch/10
SC-59
318D-03
SC-59
|
PDF
|
20LC20u
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode l ^ t l l DF20LC20US OUTLINE U n it‘m m Package : STO -220 W eight lJ> g T y p 10.2 200V 20A Dale code ^ Control No Feature • SMD • Low Noise • SM D • e y 'f x • trr=25ns @ T y p e No. +«- a il • trr-25ns
|
OCR Scan
|
DF20LC20US
trr-25ns
20LC20U
i50llzâ
J532-1)
20LC20u
|
PDF
|
|
|
smd CODE 3Gs
Abstract: smd diode schottky code marking 2F SMD DIODE marking AB Schottky
Text: International IOR Rectifier pd-9.mi2b IRF7422D2 PRELIMINARY FETKY M OSFET and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation 5 T echnology • SO-8 Footprint Vdss = -20V R DS on =
|
OCR Scan
|
IRF7422D2
smd CODE 3Gs
smd diode schottky code marking 2F
SMD DIODE marking AB Schottky
|
PDF
|
ps70sb
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Oct 28 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes FEATURES 1PS70SB40 series PINNING • Low forw ard voltage
|
OCR Scan
|
1PS70SB40
1PS70SB.
SC-70
115002/00/03/pp8
ps70sb
|
PDF
|
1PS70SB10
Abstract: 1PS70SB14 1PS70SB15 1PS70SB16
Text: DISCRETE SEMICONDUCTORS PÆm StiEiT 1PS70SB10; 1PS70SB14; 1PS70SB15; 1PS70SB16 Schottky barrier double diodes Product specification Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification 1PS70SB10; 1PS70SB14; 1PS70SB15; 1PS70SB16
|
OCR Scan
|
1PS70SB10;
1PS70SB14;
1PS70SB15;
1PS70SB16
1PS70SB16
1PS70SB.
115002/00/01/pp8
1PS70SB10
1PS70SB14
1PS70SB15
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Oct 28 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes FEATURES BAS40W series PINNING • Low forw ard voltage BAS40
|
OCR Scan
|
BAS40W
BAS40
0-04W
115002/00/03/pp8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS [Mm SMEET BAS70-07S Schottky barrier double diode 1998 Jul 10 Product specification Supersedes data of 1998 Feb 06 File under Discrete Semiconductors, SC01 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification
|
OCR Scan
|
BAS70-07S
BAS70-07S
SCA60
04/00/03/pp8
|
PDF
|
AT120A
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS 0ITÂ S y iI T BAT120 series Schottky barrier double diodes Product specification Supersedes data of 1998 Jan 21 Philips Sem iconductors 1998 Oct 30 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes
|
OCR Scan
|
BAT120
AT120A
135106/00/02/pp8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T O S H IB A TFR1 N,TFR1T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR1N, TFR1T STROBO FLASHER APPLICATIONS. FAST RECOVERY • • • Unit in mm Average Forward Current : Ijr (AV) = 0.5A Repetitive Peak Reverse Voltage : Vr rm = 1000, 1500V Reverse Recovery Time
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS GMTâ SlnlEET BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of 1996 Sep 10 Philips Semiconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification General purpose controlled avalanche
|
OCR Scan
|
BAS29;
BAS31;
BAS35
BAS31
BAS35
BAS29
115002/00/03/pp12
|
PDF
|
JTK19
Abstract: No abstract text available
Text: CNY65Exi Vishay Telefun ken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and
|
OCR Scan
|
CNY65Exi
CNY65Exi
50014-1977/VDE
50020-1977/VDE
95HOI5
95H0I6
CNY65
JTK19
11-Ja
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PLVA2600A series Low-voltage avalanche regulator double diodes Product specification Supersedes data of 1996 May 06 Philips Semiconductors 1999 May 10 PHILIPS PHILIPS Philips Semiconductors Product specification Low-voltage avalanche regulator double
|
OCR Scan
|
PLVA2600A
PLVA2650A
PLVA2653A
PLVA2656A
PLVA2659s
SCA64
5002/00/03/pp8
|
PDF
|
