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    MARKING CODE N41 Search Results

    MARKING CODE N41 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING CODE N41 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT89 MARKING n35

    Abstract: marking n36 n33 SOT-23 Marking code n09 SOT89 Voltage Detector SOT-89 marking code n09 82N45 sot89 N35 n10 marking code sot 23 N38 transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS „ DESCRIPTION The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output configurations are available.


    Original     		PDF 82NXX 82NXX 100ppm/ 82NXXL 82NXXG 82Nxx-AB3-E-R 82NxxL-AB3-E-R 82NxxG-AB3-E-R 82Nxx-AE3t QW-R502-057 SOT89 MARKING n35 marking n36 n33 SOT-23 Marking code n09 SOT89 Voltage Detector SOT-89 marking code n09 82N45 sot89 N35 n10 marking code sot 23 N38 transistor

    SOT89 MARKING n35

    Abstract: N32 MARKING CODE SOT23 marking code n09 marking code n14 82C42 82NXX 82N20 marking code ta-9 82N15 82n33
    Text: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS 3 DESCRIPTION 2 The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output configurations are available.


    Original     		PDF 82NXX 82NXX OT-23 100ppm/. OT-89 82NXXL 82Nxx-AB3-D-R QW-R502-057 SOT89 MARKING n35 N32 MARKING CODE SOT23 marking code n09 marking code n14 82C42 82N20 marking code ta-9 82N15 82n33

    N58 SOT-89

    Abstract: 82N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS  DESCRIPTION 2 The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output


    Original     		PDF 82NXX OT-23 OT-23-3 O-236) OT-25 100ppm/ï OT-89 SC-59) 82NXX QW-R502-057 N58 SOT-89 82N60

    marking n58

    Abstract: sot-23 Marking N52 marking N52 82N50 n10 marking code sot 23 82n55 SOT89 MARKING n35 82N60 82N25 N58 SOT-89
    Text: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS „ DESCRIPTION The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output


    Original     		PDF 82NXX 82NXX 100ppm/ 82NxxL-AB3-E-R 82NxxG-AB3-E-R OT-89 82NxxL-AE3-5-R 82NxxG-AE3-5-R OT-23 82NxxL-AF5-B-R marking n58 sot-23 Marking N52 marking N52 82N50 n10 marking code sot 23 82n55 SOT89 MARKING n35 82N60 82N25 N58 SOT-89

    SOT-23 MARKING N55

    Abstract: SOT89 MARKING n35 SOT89 MARKING N40 SOT89 MARKING n43 N54 SOT-23 N58 SOT-89 MARKING N52 SOT 6 Marking code n15 SOT89 device marking N52 MARKING N46
    Text: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS 4 3 „ DESCRIPTION 2 The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output


    Original     		PDF 82NXX 82NXX OT-23 OT-25 100ppm/ OT-89 QW-R502-057 SOT-23 MARKING N55 SOT89 MARKING n35 SOT89 MARKING N40 SOT89 MARKING n43 N54 SOT-23 N58 SOT-89 MARKING N52 SOT 6 Marking code n15 SOT89 device marking N52 MARKING N46

    SOT89 MARKING n43

    Abstract: n33 SOT-23 n58 sot89 77 ic marking code marking n55 Marking code n15 SOT89 marking N42 N45 SOT-89
    Text: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS „ DESCRIPTION The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output


    Original     		PDF 82NXX 82NXX 100ppm/ QW-R502-057 SOT89 MARKING n43 n33 SOT-23 n58 sot89 77 ic marking code marking n55 Marking code n15 SOT89 marking N42 N45 SOT-89

    n412

    Abstract: A1 marking code J-STD-020D DPLS31
    Text: DNLS412E LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW EW PR P R ODUC ODUCT T Features • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 57.5mΩ at 4A


    Original     		PDF DNLS412E DPLS315E) OT-223 DS31324 n412 A1 marking code J-STD-020D DPLS31

    Untitled

    Abstract: No abstract text available
    Text: DNLS412E LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 57.5mΩ at 4A High DC Current Gain hFE > 400 at IC = 3A Complementary PNP Type Available (DPLS315E)


    Original     		PDF DNLS412E DPLS315E) OT-223 DS31324

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGN USE FZT688B DNLS412E LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Features •        Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 57.5m at 4A High DC Current Gain hFE > 400 at IC = 3A


    Original     		PDF FZT688B DNLS412E DPLS315E) OT-223 DS31324

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 82NXX CMOS IC V OLT AGE DET ECT ORS 4 3 5 ̈ DESCRI PT I ON 2 The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output


    Original     		PDF 82NXX 82NXX OT-25 OT-23 100ppm/Â OT-89 QW-R502-057

    C1008 Y

    Abstract: diode N1004 B65659 B65808-K1004-D2 k1006 N48-160 B65659F0001X023 B65659F0001X101 B65807C0000R048 B65807J0000Y066
    Text: RM Cores Series/Type: RM 6 The following products presented in this data sheet are being withdrawn. Ordering Code Substitute Product B65808N1005D002 B65659F0001X101 B65821C1008T002 B65807C0000R026 B65807J0000Y042 B65808K1006D002 B65808N1006D002 B65659F0001X023


    Original     		PDF B65808N1005D002 B65659F0001X101 B65821C1008T002 B65807C0000R026 B65807J0000Y042 B65808K1006D002 B65808N1006D002 B65659F0001X023 B65821C1008T001 B65807C0000R048 C1008 Y diode N1004 B65659 B65808-K1004-D2 k1006 N48-160 B65659F0001X023 B65659F0001X101 B65807C0000R048 B65807J0000Y066

    B65808-N1006-D1

    Abstract: B65807-J-R30 B65807-J-R49 smd marking N48
    Text: The following products presented in this data sheet are being withdrawn: B65807C0000R026 Date of withdrawal: Deadline for last orders: Last shipments: B65807J0000Y042 Date of withdrawal: Deadline for last orders: Last shipments: 02−AUG−02 31−DEC−02


    Original     		PDF B65807C0000R026 B65807J0000Y042 02-AUG-02 31-DEC-02 B65807 B65808-N1006-D1 B65807-J-R30 B65807-J-R49 smd marking N48

    B65815-E250-A87

    Abstract: N41 250 B65816D2005 B65816-N1012-D1 B65816-B5000 rm transformers B65815-E1000-J41 B65815 B5000 d2005
    Text: RM 12 Core and Accessories Individual parts Part no. Page Core B65815 261 Clamps B65816 265 Insulating washer 1 B65816 265 Coil former B65816 263 Core B65815 261 Insulating washer 2 B65816 265 Coil former for power applications RM 12 low-profile core B65816


    Original     		PDF B65815 B65816 B65815-P B65816-B5000 B65815-E250-A87 N41 250 B65816D2005 B65816-N1012-D1 B65816-B5000 rm transformers B65815-E1000-J41 B65815 B5000 d2005

    PA 6/6 GF30 SIEMENS

    Abstract: Siemens Ferrite B65541 ferrite ei core n27 TESLA mh 7400 CRASTIN SO 655 IEC 60205 Luvocom B64290-A38 etd59 siemens Siemens Ferrite B64290
    Text: Contents Selector Guide Index of Part Numbers 5 11 26 SIFERRIT Materials 33 General – Definitions Application Notes Processing Notes 111 128 150 Packing Quality Considerations Standards and Specifications 165 174 177 RM Cores PM Cores EP Cores 181 274 290


    Original     		PDF

    siemens 230 94 O

    Abstract: RM CORE N67 250 B65887-E-R67 B65888-C1012-D1 B65888-B5000 B65888A2002 RM-14 coil former B65887-E250-A41 B5000 N67 transformer core
    Text: RM 14 Core and Accessories Individual parts Part no. Page Core B65887 268 Clamps B65888 272 Insulating washer 1 B65888 272 Coil former B65888 270 Core B65887 268 Insulating washer 2 B65888 272 Coil former for power applications RM 14 low-profile core B65888


    Original     		PDF B65887 B65888 B65887-P B65887-P siemens 230 94 O RM CORE N67 250 B65887-E-R67 B65888-C1012-D1 B65888-B5000 B65888A2002 RM-14 coil former B65887-E250-A41 B5000 N67 transformer core

    N48 transformer core

    Abstract: N41 250 RM10-CORE B65813-J-R67 N48-400 N48-315 N30 transformer core Transformer N41 250 Transformer N41 1600 B65813J630J87
    Text: RM 10 Core and Accessories Individual parts Part no. Page Adjusting screwdriver for assembly only B63399 257 Matching handle B63399 257 Adjusting screw B65679 257 Core B65813 252 Clamps B65814 256 Insulating washer 1 B65814 256 Coil former B65814 254 Core


    Original     		PDF B63399 B65679 B65813 B65814 N48 transformer core N41 250 RM10-CORE B65813-J-R67 N48-400 N48-315 N30 transformer core Transformer N41 250 Transformer N41 1600 B65813J630J87

    B65888-C1010-D1

    Abstract: Transistor C1012 B65887-E160-A41 B65887-E250-A41 B65888B5000 B5000 epcos B65888 B65887 RM 14 N87 Epcos B65887-E400-A41
    Text: RM 14 Core B65887 • In accordance with IEC 60431 ■ Optimized core cross section and increased thickness of base for power applications ■ Without center hole ■ RM cores are supplied in sets Magnetic characteristics per set Σl/A le Ae A min Ve = 0,35 mm–1


    Original     		PDF B65887 B65887-E160-A41 B65887-E250-A41 B65887-E400-A41 B65887-E1000-J41 B65888-C1010-D1 Transistor C1012 B65887-E160-A41 B65887-E250-A41 B65888B5000 B5000 epcos B65888 B65887 RM 14 N87 Epcos B65887-E400-A41

    B65815-E400-J41

    Abstract: B65815 B65815-E160-A41 B65815-E250-A41 B65815-E-R30 B65815-E-R49 B65815-E-R87 FRM0300-E N41 250
    Text: RM 12 Core B65815 thickness of base for power applications 5 16,1_ 0,5 29 • Without center hole ■ RM cores are supplied in sets _ 1,2 ,8 _ 1, 2 ,8 29 ■ In accordance with IEC 60431 ■ Optimized core cross section and increased Magnetic characteristics per set


    Original     		PDF B65815 FRM0300-E B65815-E160-A41 B65815-E250-A41 B65815-prohibited. B65815-E400-J41 B65815 B65815-E160-A41 B65815-E250-A41 B65815-E-R30 B65815-E-R49 B65815-E-R87 FRM0300-E N41 250

    B5000

    Abstract: B65815 B65815-E160-A41 B65815-E250-A41 B65815-E400-J41 B65815-E-R30 B65815-E-R49 B65815-E-R87 FRM0300-E B65816-D2005
    Text: RM Cores Series/Type: RM 12 The following products presented in this data sheet are being withdrawn. Ordering Code B65816D20050000 Substitute Product Date of Withdrawal 2004-10-18 Deadline Last Orders 2005-03-31 Last Shipments 2005-09-30 For further information please contact your nearest EPCOS sales office, which will also support


    Original     		PDF B65816D20050000 B65815 B5000 B65815 B65815-E160-A41 B65815-E250-A41 B65815-E400-J41 B65815-E-R30 B65815-E-R49 B65815-E-R87 FRM0300-E B65816-D2005

    N41 160

    Abstract: B65816D2005 B65816-C1512-T1 B65815 B65815-E160-A41 B65815-E250-A41 B65815-E400-J41 B65815-E-R30 B65815-E-R49 B65815-E-R87
    Text: The following products presented in this data sheet are being withdrawn: B65816D20050000 Date of withdrawal: Deadline for last orders: Last shipments: 18−OCT−04 31−MAR−05 30−SEP−05 For further information please contact your nearest EPCOS sales office, which will also support


    Original     		PDF B65816D20050000 18-OCT-04 31-MAR-05 30-SEP-05 B65815 N41 160 B65816D2005 B65816-C1512-T1 B65815 B65815-E160-A41 B65815-E250-A41 B65815-E400-J41 B65815-E-R30 B65815-E-R49 B65815-E-R87

    N41 250

    Abstract: N48-400 Transformer N41 250 N48 400 Transformer N41 1600 n41 transformer n41 630 EPCOS 470 01 O B65813-J250-A41 B65813-J630-J41
    Text: RM 10 Core B65813 • In accordance with IEC 60431 ■ Cores without center hole for transformer applications ■ RM cores are supplied in sets Magnetic characteristics per set Σl/A le Ae A min Ve with center hole without center hole 0,5 42 83 — 3 470


    Original     		PDF B65813 B65813- 400-A48 630-A48 B65813-J250-A41 B65813-J630-J41 N41 250 N48-400 Transformer N41 250 N48 400 Transformer N41 1600 n41 transformer n41 630 EPCOS 470 01 O B65813-J250-A41

    siemens ferrite n22 p14

    Abstract: Siemens Ferrite B65541 EC35 Siemens ferrite core ETD54 n62 U93 QUANTA ARALDITE ay 105 EC70 N27 Siemens Ferrite N47 EC52 N27 FERRITES N67
    Text: Contents Page 5 Selector Guide Index of Part Numbers 11 25 SIFERRIT Materials 31 General - Definitions Application and Processing Notes Packing 103 121 163 Quality Considerations Standards and Specifications 177 181 RM Cores 185 PM Cores 287 P Cores P Core Halves P Cores for Proximity Switches


    Original     		PDF

    C945 p 331

    Abstract: B1-C90/20 TRANSISTOR K1006 siemens MKL T60405-R6131-X037 t60405-s4615-x027 c945 p 331 transistor transistor C5478 siemens PTC C860 T60405-A4220-X060
    Text: Ordering Information Subject Index 5 11 A Chokes and Transformers SMD Transformers Ferrites and Accessories 15 29 37 B Thick-Film Chip Resistors NTC Thermistors PTC Thermistors Varistors Surge Arresters 121 127 143 155 167 C Ceramic Capacitors Film Capacitors


    Original     		PDF A0297 C945 p 331 B1-C90/20 TRANSISTOR K1006 siemens MKL T60405-R6131-X037 t60405-s4615-x027 c945 p 331 transistor transistor C5478 siemens PTC C860 T60405-A4220-X060

    Untitled

    Abstract: No abstract text available
    Text: DMN4010LFG 40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS 40V Features and Benefits RDS(ON) max ID max TA = +25°C 12mΩ @ VGS = 10V 11.5A 15mΩ @ VGS = 4.5V 10.3A • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher


    Original     		PDF DMN4010LFG DS36764