MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Search Results

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS
TK090U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
N P CHANNEL dual POWER MOSFET Abstract: marking code dual gate mos MOSFET dual SOP-8 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR P channel MOSFET 50A STC4516 SOP8 mos n STC5416 Dual Enhancement Mode MOSFET complementary mosfet Text: STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl DESCRIPTION STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology. This high density process is especially	Original	PDF	STC4516 STC4516 -30V/-7 22m-ohm -30V/-5 40m-ohm 10m-ohm 16m-ohm STC5416 N P CHANNEL dual POWER MOSFET marking code dual gate mos MOSFET dual SOP-8 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR P channel MOSFET 50A SOP8 mos n STC5416 Dual Enhancement Mode MOSFET complementary mosfet
STN9926 Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 N P CHANNEL dual POWER MOSFET Dual N-Channel MOSFET SOP8 marking code dual gate mos marking code 5A sop8 channel mosfet sop_8 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V MOSFET dual SOP-8 60V dual N-Channel trench mosfet Text: STN9926 Dual N Channel Enhancement Mode MOSFET 5A DESCRIPTION The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	PDF	STN9926 STN9926 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 N P CHANNEL dual POWER MOSFET Dual N-Channel MOSFET SOP8 marking code dual gate mos marking code 5A sop8 channel mosfet sop_8 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V MOSFET dual SOP-8 60V dual N-Channel trench mosfet
TPC8A01 Abstract: No abstract text available Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 Unit: mm DC-DC CONVERTER Notebook PC Portable Machines and Tools	Original	PDF	TPC8A01 Qg17nC TPC8A01
NP70N04MUG Abstract: 70N04 NP70N04MUG-S18-AY Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP70N04MUG-S18-AY LEAD PLATING	Original	PDF	NP70N04MUG NP70N04MUG NP70N04MUG-S18-AY O-220 MP-25K) O-220) 70N04 NP70N04MUG-S18-AY
k4202 Abstract: 2SK4202 nec k4202 d1922 2SK4202-S19-AY D19229EJ1V0DS Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4202 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A)	Original	PDF	2SK4202 2SK4202 2SK4202-S19-AY O-220 k4202 nec k4202 d1922 2SK4202-S19-AY D19229EJ1V0DS
D1859 Abstract: NEC 109N04 MP-25ZP NP109N04PUG NP109N04PUG-E1-AY NP109N04PUG-E2-AY Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP109N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP109N04PUG-E1-AY Note	Original	PDF	NP109N04PUG NP109N04PUG NP109N04PUG-E1-AY NP109N04PUG-E2-AY O-263 MP-25ZP) O-263) D1859 NEC 109N04 MP-25ZP NP109N04PUG-E1-AY NP109N04PUG-E2-AY
2sk4202 Abstract: nec k4202 k4202 2sk420 d1922 2SK4202-S19-AY NEC TRANSISTOR MARKING CODE 2SK4202-S19 2SK42 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4202 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A)	Original	PDF	2SK4202 2SK4202 2SK4202-S19-AY O-220 nec k4202 k4202 2sk420 d1922 2SK4202-S19-AY NEC TRANSISTOR MARKING CODE 2SK4202-S19 2SK42
transistor K4145 Abstract: 2SK4145 nec k4145 k4145 k4145 NEC fet K4145 transistor 2sk4145 2SK4145-S19-AY transistor d 1302 K4145 DATASHEET Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4145 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 10 mΩ MAX. (VGS = 10 V, ID = 42 A)	Original	PDF	2SK4145 2SK4145 2SK4145-S19-AY O-220 transistor K4145 nec k4145 k4145 k4145 NEC fet K4145 transistor 2sk4145 2SK4145-S19-AY transistor d 1302 K4145 DATASHEET
d1941 Abstract: K4144 2SK4144 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR transistor K4144 ke marking transistor P300 2SK41 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4144 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK4144-AZ LEAD PLATING Note	Original	PDF	2SK4144 2SK4144 2SK4144-AZ 2SK4144-S12-AZ O-220 d1941 K4144 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR transistor K4144 ke marking transistor P300 2SK41
d1941 Abstract: NP161N04TUG MP-25ZT 161N04 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP161N04TUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP161N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP161N04TUG-E1-AY Note	Original	PDF	NP161N04TUG NP161N04TUG NP161N04TUG-E1-AY NP161N04TUG-E2-AY O-263-7pin MP-25ZT) d1941 MP-25ZT 161N04
55N03 Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR d1832 NP55N03SUG NP55N03SUG-E1-AY NEC to-252 marking information Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N03SUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP55N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP55N03SUG-E1-AY Note	Original	PDF	NP55N03SUG NP55N03SUG NP55N03SUG-E1-AY NP55N03SUG-E2-AY O-252 O-252) 55N03 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR d1832 NP55N03SUG-E1-AY NEC to-252 marking information
D1866 Abstract: 70n04 NP70N04MUG NP70N04MUG-S18-AY NEC MARKING CODE Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP70N04MUG-S18-AY LEAD PLATING	Original	PDF	NP70N04MUG NP70N04MUG NP70N04MUG-S18-AY O-220 MP-25K) O-220) D1866 70n04 NP70N04MUG-S18-AY NEC MARKING CODE
NEC 110N04 Abstract: 110N04 NP110N04PDG NP110N04PDG-E2-AZ MP-25ZP NP110N04PDG-E1-AZ NEC LOT CODE D1756 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N04PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP110N04PDG-E1-AZ	Original	PDF	NP110N04PDG NP110N04PDG NP110N04PDG-E1-AZ NP110N04PDG-E2-AZ O-263 MP-25ZP) O-263) NEC 110N04 110N04 NP110N04PDG-E2-AZ MP-25ZP NP110N04PDG-E1-AZ NEC LOT CODE D1756
D1866 Abstract: 70n04 NP70N04MUG NP70N04MUG-S18-AY Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP70N04MUG-S18-AY LEAD PLATING	Original	PDF	NP70N04MUG NP70N04MUG NP70N04MUG-S18-AY O-220 MP-25K) O-220) D1866 70n04 NP70N04MUG-S18-AY

180N04 Abstract: d1889 NP180N04TUG TO-263-7pin NP180 NP180N04TUG-E2-AY MP-25ZT NP180N04TUG-E1-AY NP180N04TUG-E1-AY in date code marking NEC Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP180N04TUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP180N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING NP180N04TUG-E1-AY	Original	PDF	NP180N04TUG NP180N04TUG NP180N04TUG-E1-AY NP180N04TUG-E2-AY O-263-7pin MP-25ZT) O-263-7pin) 180N04 d1889 TO-263-7pin NP180 NP180N04TUG-E2-AY MP-25ZT NP180N04TUG-E1-AY NP180N04TUG-E1-AY in date code marking NEC
2SK4201 Abstract: 2SK4201-S19 2SK42 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)	Original	PDF	2SK4201 2SK4201 2SK4201-S19-AY O-220 2SK4201-S19 2SK42
transistor K4145 Abstract: 2sk4145 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4145 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 10 mΩ MAX. (VGS = 10 V, ID = 42 A)	Original	PDF	2SK4145 2SK4145 2SK4145-S19-AY O-220 transistor K4145
K4201 Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)	Original	PDF	2SK4201 2SK4201 2SK4201-S19-AY O-220 K4201
d1875 Abstract: 160N04 D18754EJ1V0DS00 NP160N04TUG NP160N04TUG-E1-AY NP160N04TUG-E2-AY TO-263-7pin Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TUG-E1-AY Note	Original	PDF	NP160N04TUG NP160N04TUG NP160N04TUG-E1-AY NP160N04TUG-E2-AY O-263-7pin MP-25ZT) O-263-7pin) d1875 160N04 D18754EJ1V0DS00 NP160N04TUG-E1-AY NP160N04TUG-E2-AY TO-263-7pin
d1859 Abstract: 109N04 NEC 109N04 MP-25ZP NP109N04PUG NP109N04PUG-E1-AY NP109N04PUG-E2-AY Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP109N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP109N04PUG-E1-AY Note	Original	PDF	NP109N04PUG NP109N04PUG NP109N04PUG-E1-AY NP109N04PUG-E2-AY O-263 MP-25ZP) O-263) d1859 109N04 NEC 109N04 MP-25ZP NP109N04PUG-E1-AY NP109N04PUG-E2-AY
TPC8005-H Abstract: No abstract text available Text: TPC8005-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed U−MOS TPC8005−H High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Small footprint due to small and thin package	Original	PDF	TPC8005-H TPC8005-H
55N03 Abstract: NP55N03SUG NP55N03SUG-E1-AY MOS FIELD EFFECT TRANSISTOR Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N03SUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP55N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP55N03SUG-E1-AY Note	Original	PDF	NP55N03SUG NP55N03SUG NP55N03SUG-E1-AY NP55N03SUG-E2-AY O-252 O-252) 55N03 NP55N03SUG-E1-AY MOS FIELD EFFECT TRANSISTOR
k2995 Abstract: transistor marking MH 2SK2995 Text: 2SK2995 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2995 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 48 mΩ (typ.) High forward transfer admittance : \|Yfs\| = 30 S (typ.)	Original	PDF	2SK2995 K2995 k2995 transistor marking MH 2SK2995
90n04 Abstract: NP90N04VUG 90n04 UG NP90N04V DIODE MARKING code UG 45 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N04VUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N04VUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N04VUG-E1-AY NP90N04VUG-E2-AY	Original	PDF	NP90N04VUG NP90N04VUG NP90N04VUG-E1-AY NP90N04VUG-E2-AY O-252 AEC-Q101ems, 90n04 90n04 UG NP90N04V DIODE MARKING code UG 45

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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Search Results

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Result Highlights (5)

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Datasheets Context Search

N P CHANNEL dual POWER MOSFET

STN9926

TPC8A01

NP70N04MUG

k4202

D1859

2sk4202

transistor K4145

d1941

d1941

55N03

D1866

NEC 110N04

D1866

180N04

2SK4201

transistor K4145

K4201

d1875

d1859

TPC8005-H

55N03

k2995

90n04