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    MARKING CODE LA SOT363 Search Results

    MARKING CODE LA SOT363 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING CODE LA SOT363 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance 0.010(0.25) • The MOSFET elements are independent,eliminating interference


    Original     		PDF OT-363 RB500V-40

    PJ4N

    Abstract: marking code ga sot 363 MARKING CODE LA sot363 sot-363 marking DS marking CODE GA sot363 ZE marking sot-363 SOT 363 marking CODE LA sot363 XI PJ4N3KDW
    Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • RDS(ON), [email protected],IDS@10mA=5.0Ω • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF 2002/95/EC IEC61249 OT-363 RB500V-40 PJ4N marking code ga sot 363 MARKING CODE LA sot363 sot-363 marking DS marking CODE GA sot363 ZE marking sot-363 SOT 363 marking CODE LA sot363 XI PJ4N3KDW

    PJ4N

    Abstract: No abstract text available
    Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , [email protected],IDS@10mA=5.0 0.018(0.45) 0.006(0.15) • RDS(ON), [email protected],IDS@1mA=7.0 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology 0.030(0.75) 0.021(0.55)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)


    Original     		PDF 2N7002KDW OT-363 500mA 200mA 2002/95/EC IEC61249 2010-REV RB500V-40 2N7002KDW

    K2765

    Abstract: No abstract text available
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)


    Original     		PDF 2N7002KDW 500mA 200mA 2002/95/EC IEC61249 OT-363 OT-363 2010-REV RB500V-40 K2765

    sot-363 n-channel mosfet

    Abstract: K27 SOT-363 MARKING K2765 SOT 363 marking CODE LA 2N7002K k27 sot-363
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)


    Original     		PDF 2N7002KDW 500mA 200mA 2002/95/EC IEC61249 OT-363 OT-363 2010-REV RB500V-40 sot-363 n-channel mosfet K27 SOT-363 MARKING K2765 SOT 363 marking CODE LA 2N7002K k27 sot-363

    Untitled

    Abstract: No abstract text available
    Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , [email protected],IDS@1mA=7.0 • RDS(ON), [email protected],IDS@10mA=5.0 • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • The MOSFET elements are independent,eliminating interference


    Original     		PDF 2011/65/EU 2013-REV

    NPN 3906

    Abstract: TRANSISTOR MARKING TE SOT363
    Text: MMDT3946 COMPLEMENTARY NPN/PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • Epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • • • • Collector current Ic = 200mA Lead free in comply with EU RoHS 2002/95/EC directives.


    Original     		PDF MMDT3946 200mA 2002/95/EC IEC61249 300MHz 100MHz OT-363, MIL-STD-750, 2011-REV NPN 3906 TRANSISTOR MARKING TE SOT363

    Untitled

    Abstract: No abstract text available
    Text: MMDT4401 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design 0.087 2.20 0.074(1.90) • Collector-emitter voltage V CE =40V 0.010(0.25) • Collector current I C = 600mA • / 


    Original     		PDF MMDT4401 600mA OT-363, MIL-STD-750, 2011-REV

    Untitled

    Abstract: No abstract text available
    Text: MMDT3904 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA • Lead free in comply with EU RoHS 2002/95/EC directives.


    Original     		PDF MMDT3904 200mA 2002/95/EC IEC61249 OT-363, MIL-STD-750, 2011-REV RB500V-40 MMDT3904

    Untitled

    Abstract: No abstract text available
    Text: MMDT3904 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design 0.087 2.20 0.074(1.90) 0.010(0.25) • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA • Lead free in compliance with EU RoHS 2011/65/EU directive


    Original     		PDF MMDT3904 200mA 2011/65/EU IEC61249 OT-363, MIL-STD-750, 2011-REV

    Untitled

    Abstract: No abstract text available
    Text: MMDT3904 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design 0.087 2.20 0.074(1.90) 0.010(0.25) • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA • Lead free in comply with EU RoHS 2002/95/EC directives.


    Original     		PDF MMDT3904 200mA 2002/95/EC IEC61249 OT-363, MIL-STD-750, 2011-REV

    Voltage-HSMS-282A

    Abstract: SOT-363 marking jf SOT 363 marking CODE LA HSMS-280A marking CODE 001 hsms280a LA sot363 HSMS2820 LF 28-2P 282A
    Text: Wtiat H E W L E T T 1 l/LM P A C K A R D Surface M ount RF Schottky D iodes in SOT-363 SC-70, 6 Lead Technical Data HSMS 280K /L /M /N /P /R HSMS 281K/L HSMS 2 8 2 K /L /M /N /P /R F eatu res • U nique co n figu ration s in su rfa ce m ount SOT-363 package


    OCR Scan     		PDF OT-363 SC-70, 280K/L/M/N/P/R 281K/L 282K/L/M/N/P/R OT-363 HSMS-28jcK HSMS-282a HSMS-280a HSMS-281a Voltage-HSMS-282A SOT-363 marking jf SOT 363 marking CODE LA HSMS-280A marking CODE 001 hsms280a LA sot363 HSMS2820 LF 28-2P 282A

    SII907

    Abstract: 223S
    Text: _ S ii 907 Vishay Siliconix New Product Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY V d s r D S (o n) ( ß ) Id (A) 0.650 @ VGS = -4 .5 V ± 0 .5 6 (V ) -1 2 0.925 @ VGS = -2 .5 V ± 0 .4 7 1.310 @ V qq = -1 .8


    OCR Scan     		PDF OT-363 SC-70 150cC S-99184--Rev. 01-Nov-99 S-99184-- SII907 223S

    sot363 marking qs

    Abstract: No abstract text available
    Text: SÌ1913EDH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V ) 0.490 @ VGS = -4 .5 V -2 0 0.750 @ Vqs = "2 .5 1.10 @ VGs = -1 .B • TrenchFET Power MOSFETS: 1.8-V Rated • ESD Protected: 3000 V • Thermally Enhanced SC-70 Package


    OCR Scan     		PDF 1913EDH SC-70 OT-363 SC-70 S-03175-- 05-Mar-01 SM913EDH sot363 marking qs

    Untitled

    Abstract: No abstract text available
    Text: TfiJH H E W L E T T WL'eM PA C K A R D Surface Mount RF PIN Diodes in SOT-363 SC-70, 6 Lead Technical Data HSMP-386L HSMP 389L/R/T/U/V Features • Unique configurations in surface mount SOT-363 package - Add flexibility - Save board space - Reduce cost


    OCR Scan     		PDF OT-363 SC-70, HSMP-386L 389L/R/T/U/V HSMS-389aâ HSMP-389a-TR2* HSMP-389a-TRl* HSMP-389a-BLK* HSMP-386L-TR2

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array »Switching circuit, inverter, interface circuit, drive circuit * Two galvanic internal isolated NPN/PNP Transistor in one package • Built In bias resistor (R ^IO kiî, R2=47kiî) Tape loading orientation


    OCR Scan     		PDF OT-363 Q62702-C2495

    RQ TRANSISTOR

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PUMD12 NPN/PNP resistor-equipped transistor Product specification Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification NPN/PNP resistor-equipped transistor PUMD12 FEATURES • Transistors with different polarity


    OCR Scan     		PDF PUMD12 SC-88) 115002/00/01/pp8 RQ TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PUMH7 NPN resistor-equipped double transistor Product specification Supersedes data of 1998 Jun 29 Philips Sem iconductors 1999 Apr 22 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor


    OCR Scan     		PDF 115002/00/02/pp8

    bc 494 pnp

    Abstract: 847PN
    Text: BC 847PN SIEMENS NPN/PNP Silicon AF Transistor Array * For A F input stages and driver applivations * High current gain * Low collector-emitter saturation voltage >Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation


    OCR Scan     		PDF 847PN 847PN Q62702-C2374 OT-363 bc 494 pnp

    Untitled

    Abstract: No abstract text available
    Text: TC0205AD Vishay Siliconix New Product Dual N- and P-Channel ±20-V Low-Threshold MOSFET PRODUCT SUMMARY Channel VDS V N-Channel 20 r D S (o n) 2.0 @ VGs P-Channel lD(mA) (Q) = 4-5 V 250 2.5 @ VGS = 2.5 V 150 3.8 @Vq s = -4 .5 V -1 8 0 5.0 @V qs = "2 .5 V


    OCR Scan     		PDF TC0205AD SC-70, S-0427 16-Jui-01 TC0205AD S-04279-- 16-Jul-01

    marking code AVN

    Abstract: transistor K 2333 transistor ph 45 AN 6752
    Text: DISCRETE SEMICONDUCTORS PUMB4 PNP resistor-equipped double transistor Product specification Supersedes data of 1998 Aug 03 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification PNP resistor-equipped double transistor PUMB4


    OCR Scan     		PDF MAM344 SC-88 115002/00/03/pp8 marking code AVN transistor K 2333 transistor ph 45 AN 6752

    PUMX1

    Abstract: marking code IC .ztz
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PUMX1 NPN general purpose double transistor Preliminary specification Supersedes data of 1997 Jul 09 Philips Sem iconductors 1999 Apr 14 PHILIPS Philips Semiconductors Preliminary specification NPN general purpose double transistor


    OCR Scan     		PDF SC-88 115002/00/03/pp8 PUMX1 marking code IC .ztz

    Untitled

    Abstract: No abstract text available
    Text: What HEW LETT mLUM P A C K A R D Surface Mount RF Schottky Diodes in SOT-363 SC-70, 6 Lead Technical Data HSMS 280K /L /M /N /P/R HSMS 281K/L HSMS 282K /L /M /N /P /R Features • Unique configurations in surface mount SOT-363 package - increase flexibility


    OCR Scan     		PDF OT-363 SC-70, 281K/L HSMS-28 HSMS-282a HSMS-280a 5966-2049E 5968-2356E