MIXA151W1200EH
Abstract: D6 TRANSISTOR MARKING IC marking code D3 D434
Text: MIXA 151W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 220 A VCE sat = 1.8 V Part name (Marking on product) MIXA151W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive
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151W1200EH
MIXA151W1200EH
E72873
20110719a
MIXA151W1200EH
D6 TRANSISTOR MARKING
IC marking code D3
D434
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MIXA61H1200ED
Abstract: No abstract text available
Text: MIXA 61H1200ED IGBT XPT Module H Bridge VCES = 1200 V IC25 = 85 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA 61H1200ED 13 D5 D1 1 T1 9 2 T5 10 E72873 16 14 D2 3 T2 4 D6 11 T6 12 17 Features: Application: Package: • Easy paralleling due to the positive
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61H1200ED
E72873
20110509a
MIXA61H1200ED
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Untitled
Abstract: No abstract text available
Text: MIXA 61H1200ED IGBT XPT Module H Bridge VCES = 1200 V IC25 = 85 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA 61H1200ED 13 D5 D1 1 T1 9 2 T5 10 E72873 16 14 D2 3 T2 4 D6 11 T6 12 17 Features: Application: Package: • Easy paralleling due to the positive
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61H1200ED
E72873
20110509a
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D6SB 80 5
Abstract: D6SB80 marking diode 6a 20/D6SB 80
Text: シングルインライン型 Bridge Diode Single In-line Package •外観図 OUTLINE D6SB80 Unit : mm Weight : 6.3g （typ.） Package：5S 800V 6A 管理番号（例） Control No. 品名 Type No. 特長 ロット記号（例） 4.6 Date code 30 • 薄型 SIP パッケージ
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D6SB80
E142422
25unless
J534-1
D6SB 80 5
D6SB80
marking diode 6a
20/D6SB 80
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101W1200EH
Abstract: D434
Text: MIXA 101W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive
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101W1200EH
MIXA101W1200EH
E72873
Uninter1200
20110715a
101W1200EH
D434
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Untitled
Abstract: No abstract text available
Text: MIXA 101W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA101W1200EH 13, 21 D1 1 T1 D2 5 2 T2 D3 9 T3 10 6 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive
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101W1200EH
MIXA101W1200EH
E72873
20110715a
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D6 TRANSISTOR MARKING
Abstract: No abstract text available
Text: MIEB 101W1200EH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101W1200EH 13, 21 D1 1 T1 D2 5 2 T2 D3 9 T3 10 6 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: + • SPT IGBT technology • low saturation voltage
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101W1200EH
MIEB101W1200EH
E72873
20110511a
D6 TRANSISTOR MARKING
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MIEB101W1200EH
Abstract: 101W1200EH
Text: MIEB 101W1200EH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • SPT IGBT technology
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101W1200EH
MIEB101W1200EH
E72873
20110511a
MIEB101W1200EH
101W1200EH
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D6SBN20
Abstract: a3120 3120A
Text: シングルインライン型 SBD Bridge Single In-line Package •外観図 OUTLINE D6SBN20 Unit : mm Weight : 6.3g （typ.） Package：5S 200V 6A 管理番号（例） Control No. 品名 Type No. 特長 ロット記号（例） 4.6 Date code 30 • 薄型 SIP パッケージ
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D6SBN20
J534-1
D6SBN20
a3120
3120A
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VUI72-16NOXT
Abstract: vui72-16 VUI72 215 dc brake rectifier motor VUI72-1 72-16NOXT vui three phase bridge ixys vui72-16no 9V bridge rectifier ic VUI72-16N
Text: VUI 72-16NOXT Three Phase Rectifier Bridge VRRM = 1600 V IdAVM = 110 A with Brake IGBT Part name Marking on product VUI72-16NOXT 6 11 D1 12 5 1 ˙NTC D3 D5 4 2 11 ~1 ~7 ~9 6 D2 7 5 12 9 10 D4 D6 T 2 4 E72873 10 Features: Application: Package: • Three phase mains rectifier
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72-16NOXT
VUI72-16NOXT
E72873
201on
20101119a
VUI72-16NOXT
vui72-16
VUI72
215 dc brake rectifier motor
VUI72-1
72-16NOXT
vui three phase bridge ixys
vui72-16no
9V bridge rectifier ic
VUI72-16N
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D6SB 80 5
Abstract: 600V-6A D6SB60L d6sb 60l
Text: Bridge Diode 低ノイズタイプ シングルインライン型 Low Noise type Single In-line Package •外観図 OUTLINE D6SB60L Unit : mm Weight : 6.3g （typ.） Package：5S 600V 6A 管理番号（例） Control No. 品名 Type No. 特長 D6SB 60L 0264
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D6SB60L
E142422
25unless
J534-1
D6SB 80 5
600V-6A
D6SB60L
d6sb 60l
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Untitled
Abstract: No abstract text available
Text: MIXD80PM650TMI IGBT Modules Multi Level IC80 T1/T4 = 82 A IC80 (T2/T3) = 110 A VCES = 650 V VCE(sat) typ. = 1.5 V XPT IGBT Technology Part name (Marking on product) MIXD80PM650TMI + Th1 D1 G1 Th2 T1 E1 e NTC D5 D2 T2 iv G2 N E2 G3 U D3 T3 E3 t D6 G4 D4 T4
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MIXD80PM650TMI
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VUB72-12NOXT
Abstract: VUB72-16NOXT ixys vub 70 215 dc brake rectifier motor VUB72-12 vub 70 -16
Text: VUB 72-12/16NOXT Three Phase Rectifier Bridge VRRM = 1200/1600 V IdAVM = 110 A with Brake Chopper Part name Marking on product VUB72-12NOXT VUB72-16NOXT 6 11 D1 D3 D5 12 10 1 NTC 4 2 D 11 5 ~1 ~7 ~9 6 D2 7 5 12 9 10 D4 D6 T 2 4 Features: Application: Package:
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72-12/16NOXT
1200/1600V
VUB72-12NOXT
VUB72-16NOXT
E72873
to800
20101119a
VUB72-16NOXT
ixys vub 70
215 dc brake rectifier motor
VUB72-12
vub 70 -16
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Untitled
Abstract: No abstract text available
Text: MWI 75-12T7T IC25 = 110 A VCES = 1200 V VCE sat typ. = 1.7 V Six-Pack Trench IGBT Part name (Marking on product) MWI 75-12T7T 15, 16 25, 26 D1 T1 17 D3 1 5 2 6 T3 D5 9 T5 10 23, 24 21, 22 19, 20 NTC E72873 Pin coniguration see outlines. D2 18 3 D4 T2 4 D6
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75-12T7T
E72873
20100910e
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M99A
Abstract: DMA90U1800LB
Text: DMA 90U1800LB Three Phase Rectifier Bridge VRRM = 1800 V Id AV M = 99 A IFSM = 320 A ISOPLUS Surface Mount Power Device DC+ L1 L2 L3 D1 D2 D3 L1 L2 L3 E72873 D4 D5 D6 DC+ DC- DC- Features Rectifier Bridge Symbol Conditions Maximum Ratings VRRM 1800 V 38
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90U1800LB
E72873
M99A
DMA90U1800LB
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Untitled
Abstract: No abstract text available
Text: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin coniguration see outlines. G2 G4 EU G6 EV EW Features: Application:
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MIXA20W1200TMH
20091127a
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G4EU
Abstract: ic MARKING QG E72873 DIODE T6 marking
Text: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV EW Features: Application:
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MIXA20W1200TMH
20091127a
G4EU
ic MARKING QG
E72873
DIODE T6 marking
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G4EU
Abstract: E72873 MIXA20W1200TMH
Text: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV
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MIXA20W1200TMH
20091127a
G4EU
E72873
MIXA20W1200TMH
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Untitled
Abstract: No abstract text available
Text: D6XBA40 . D6XBA100 6.0 Amp. Glass Passivated Single Phase In Line Bridge Rectifier IN LINE BIG ~ ~ Current 6.0 A Voltage 400 V to 1000 V FEATURES UL recognition file number E320541 Ideal for printed circuit board High case dielectric strength of 2000 Vrms
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D6XBA40
D6XBA100
E320541
2011/65/EU
2002/96/EC
MIL-STD-750
J-STD-002
JESD22-B102.
May-12
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Untitled
Abstract: No abstract text available
Text: D6XBA40 . D6XBA100 6.0 Amp. Glass Passivated Single Phase In Line Bridge Rectifier IN LINE BIG ~ ~ Current 6.0 A Voltage 400 V to 1000 V FEATURES UL recognition file number E320541 Ideal for printed circuit board High case dielectric strength of 2000 Vrms
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D6XBA40
D6XBA100
E320541
2011/65/EU
2002/96/EC
MIL-STD-750
J-STD-002
JESD22-B102.
May-12
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apm28
Abstract: A104 diode
Text: APM2804QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged
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APM2804QA
-20V/-2
500mA.
APM2804
JESD-22,
apm28
A104 diode
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M2805
Abstract: APM2805 APM2805QA JESD-22 MO-229 ANPEC c125t
Text: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged
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APM2805QA
-20V/-2
500mA.
JESD-22,
M2805
APM2805
APM2805QA
JESD-22
MO-229
ANPEC
c125t
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A96V
Abstract: Si2326DS
Text: Si2326DS New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2326DS (D6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2326DS
O-236
OT-23)
S-2381--Rev.
23-Oct-00
A96V
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igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and
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