ksd303
Abstract: SDB310WMU ksd 30 KSD30
Text: SDB310WMU Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking SDB310WMU Package Code DB3 SOT-323 Outline Dimensions unit : mm 2.1±0.1 1.25±0.05 1.30±0.1
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SDB310WMU
OT-323
KSD-3033-000
ksd303
SDB310WMU
ksd 30
KSD30
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SDB310WM
Abstract: SDB310WMF ksd2062
Text: SDB310WMF Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking SDB310WMF DB3 Package Code SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC
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Original
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SDB310WMF
OT-23F
KSD-2062-000
SDB310WM
SDB310WM
SDB310WMF
ksd2062
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PDF
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ksd202
Abstract: SDB310WM ksd2027
Text: SDB310WM Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking Package Code SDB310WM DB3 SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 2.9±0.1 1.90 Typ.
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Original
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SDB310WM
OT-23
KSD-2027-001
ksd202
SDB310WM
ksd2027
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PDF
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Untitled
Abstract: No abstract text available
Text: SDB310WMU Semiconductor Schottky Barrier Diode Features • Low VF Max. 0.5V @ 30mA • Low IR ( Max. 1 ㎂ @ 30V) • High reliability Ordering Information Type No. Marking SDB310WMU Package Code DB3 SOT-323 Outline Dimensions unit : mm 1.95~2.25 1.15~1.35
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Original
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SDB310WMU
OT-323
KSD-3033-002
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PDF
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Untitled
Abstract: No abstract text available
Text: SDB310WMUF Semiconductor Schottky Barrier Diode Features • Low VF Max. 0.5V @ 30mA • Low IR ( Max. 1 ㎂ @ 30V) • High reliability Ordering Information Type No. SDB310WMUF Marking Package Code DB3 SOT-323F Outline Dimensions unit : mm 1.95~2.25 0.40 Max.
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Original
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SDB310WMUF
OT-323F
KSD-3046-001
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PDF
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30460
Abstract: marking DB3 SDB310WMUF KSD30
Text: SDB310WMUF Semiconductor Schottky Barrier Diode Features • Low VF Max. 0.5V @ 30mA • Low IR ( Max. 1 ㎂ @ 30V) • High reliability Ordering Information Type No. SDB310WMUF Marking Package Code DB3 SOT-323F Outline Dimensions unit : mm 1.95~2.25 0.40 Max.
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Original
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SDB310WMUF
OT-323F
KSD-3046-001
15ponents
30460
marking DB3
SDB310WMUF
KSD30
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PDF
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d449
Abstract: DB3c DB3CB1AA D449V1AA
Text: L4 Series Lighted Pushbutton Square Round Rectangle Ordering Information L4 4 L 1 Series/Prefix Code L M P Q Code 1 3 4 Lamp 14 VDC Standard 14 VDC (Long Life) 6 VDC 28 VDC Switch Style D41L-R1AA DB3CB1AA D449-V1AA Note: For additional styling options contact factory.
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D41L-R1AA
D449-V1AA
d449
DB3c
DB3CB1AA
D449V1AA
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PDF
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Untitled
Abstract: No abstract text available
Text: SODDB3/SODDB3T Taiwan Semiconductor Small Signal Product SOD-123 Trigger Diode DIAC FEATURES - Surface Mount Device SOD-123 packaged - VBO=32V DB3 - Max. PD=400mW MECHANICAL DATA - Case: Plastic gull wing SOD-123 package - High temperature soldering guaranteed: 260°C/10s
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Original
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OD-123
400mW
C/10s
OD-123
S1406002
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PDF
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Untitled
Abstract: No abstract text available
Text: DB3DB4、DB6 Bi-directional trigger diodes 0.5Watt Peak Power VOLTAGE - 28 TO 70 Volts 1. ProductCharacteristic * We declare that the material of product compliance with ROHS requirements Symbol Parameter VBO Breakdown Voltage +VBO - -VBO Breakover Voltage Symmetry
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LRC/M07-026
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diac marking
Abstract: DIAC 220v
Text: DB3MJ Silicon Bidirectional Diac VOLTAGE RANGE: 28-36 V SMAJ 4.3±0.1 2.6±0.15 1.70±0.25 Features The three layer,two termnal,axial lead,hermetically 11 11sealed diacs are designed specifically for triggering 111 1thyristors.They demonstrate low breakover current at
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120Hz
203MAX
11sealed
500KD
100Hz
diac marking
DIAC 220v
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c4 smd marking code
Abstract: panasonic date code BP050-0024UJ03 Panasonic Semiconductor CATALOG MLP 4x4 24L ecg catalog C90114 ECJ1VB1E104K ARFX1231-ND ECT02-21464
Text: 5 4 3 2 1 J1 CWN-350-14-0000 DB5 GND DB4 7 C2 6 GND DB3 5 C1 4 GND DB2 3 C0.5 2 GND DB1 1 VDD R4 DNI R1 0 OHM 19 C16 18 2 VDD NC 17 3 NC NC 16 4 RF1 RF2 15 5 NC NC 14 6 ACG ACG 13 C4 J3 SMAUP Z=50 Ohm 100pF 1 NC B 12 ACG 11 10 ACG ACG U1 MLPQ4X4_24L 2 20 C8
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Original
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CWN-350-14-0000
100pF
1/20W,
301-0-RC
ERJ-1GEF103C
P10KABTR-ND
ECT02-21464
c4 smd marking code
panasonic date code
BP050-0024UJ03
Panasonic Semiconductor CATALOG
MLP 4x4 24L
ecg catalog
C90114
ECJ1VB1E104K
ARFX1231-ND
ECT02-21464
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DB3X314F (Tentative) Silicon epitaxial planar type For high speed switching circuits • Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Maximum peak reverse voltage Single Forward current
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2002/95/EC)
DB3X314F
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PDF
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DB3X209K
Abstract: DB3X209
Text: This product complies with the RoHS Directive EU 2002/95/EC . DB3X209K (Tentative) Silicon epitaxial planar type For high frequency rectification • Package Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VR 20 V Repetitive peak reverse voltage
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2002/95/EC)
DB3X209K
DB3X209K
DB3X209
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DB3S314K (Tentative) Silicon epitaxial planar type For high speed switching circuits • Package Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VR 30 V VRM 30 V IF 30 mA Peak forward current
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2002/95/EC)
DB3S314K
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DB3J315E (Tentative) Silicon epitaxial planar type For high speed switching circuits • Packaging Package Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) Code SMini3-F2-B
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2002/95/EC)
DB3J315E
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DB37315E Silicon epitaxial planar type For high speed switching circuits DB3S315E in SSSMini3 type package • Features Package Short reverse recovery time trr Small reverse current IR
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2002/95/EC)
DB37315E
DB3S315E
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PDF
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DB3X603K
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DB2X603 Silicon epitaxial planar type For high speed switching circuits DB3X603K in Mini2 type package • Features Package High reverse voltage VR Small reverse current IR Contributes to miniaturization of sets, reduction of component count.
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2002/95/EC)
DB2X603
DB3X603K
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DB3S315E (Tentative) Silicon epitaxial planar type For high speed switching circuits • Packaging Package Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) Code SSMini3-F3-B
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2002/95/EC)
DB3S315E
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PDF
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Untitled
Abstract: No abstract text available
Text: CY54FCT244T, CY74FCT244T 8-BIT BUFFERS/LINE DRIVERS WITH 3-STATE OUTPUTS SCCS071 – OCTOBER 2001 D D D D D D D D OEA DA0 OB0 DA1 OB1 DA2 OB2 DA3 OB3 GND 1 20 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 VCC OEB OA0 DB0 OA1 DB1 OA2 DB2 OA3 DB3 CY54FCT244T . . . L PACKAGE
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CY54FCT244T,
CY74FCT244T
SCCS071
CY54FCT244T
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PDF
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Untitled
Abstract: No abstract text available
Text: DB3J314K Silicon epitaxial planar type Unit: mm For high speed switching circuits DB3X314K in SMini3 type package • Features Short reverse recovery time trr Small reverse current IR Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant
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DB3J314K
DB3X314K
UL-94
DB3J314K0L
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PDF
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Untitled
Abstract: No abstract text available
Text: DB3X314K Silicon epitaxial planar type Unit: mm For high speed switching circuits • Features Short reverse recovery time trr Small reverse current IR Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: 4X
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DB3X314K
UL-94
DB3X314K0L
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PDF
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DB2J31400
Abstract: DB2J31400L
Text: DB2J314 Silicon epitaxial planar type Unit: mm For high speed switching circuits DB3X314K in SMini2 type package • Features Short reverse recovery time trr Small reverse current IR Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant
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Original
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DB2J314
DB3X314K
UL-94
DB2J31400L
DB2J31400
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PDF
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diode D83
Abstract: D83 - 004 d83 004 diode D83 004 D22 diode marking code r63400 D51X d95-3000 D93G D75-1100
Text: T W L À M I N A S J EN ISO 9001:2000 v^Z ertifik a t: 75 .1 0 0 .6 7 3 TUV Rheinland InterCert SEMICONDUCTOR POWER DEVICES DIODES , €UROPRODUKT 2004 Marking D61D - 250 - 22 - N O -Œ D -D special requirements and selections code external leads code base code for stud types letter sign
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OCR Scan
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glass-metal110
1130g
diode D83
D83 - 004
d83 004
diode D83 004
D22 diode marking code
r63400
D51X
d95-3000
D93G
D75-1100
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PDF
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Y100F
Abstract: 33592
Text: ! DASH NO. ± APPLICATION NEXT ASSY 1 USED ON Dept 75 P/N DB3131C12N DATE 9/2/03 INITIAL R E L E A SE B Dept 25 P/N 149391 REVISk-.JS DESCRIPTION LTR Output Frequency 100-600 MHz Input Frequency 31.8-32.3 G Hz APPROVED LO Frequency 31.7 GHz ELECTRICA L SPECIFICATIONS
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OCR Scan
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DB3131C12N
dB/40
Y100F
33592
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PDF
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