MOSFET TRANSISTOR SMD MARKING CODE A1
Abstract: NXP SMD mosfet MARKING CODE smd TRANSISTOR code marking AV SMD TRANSISTOR MARKING DE TRANSISTOR SMD MARKING CODE A1 K TRANSISTOR SMD MARKING CODE PNP TRANSISTOR SOT457 PNP transistor/Schottky rectifier module transistor smd yw PMEM4020AND
Text: PMEM4020APD PNP transistor/Schottky rectifier module Rev. 02 — 31 August 2009 Product data sheet 1. Product profile 1.1 General description Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457
|
Original
|
PDF
|
PMEM4020APD
OT457
SC-74)
PMEM4020AND
PMEM4020APD
MOSFET TRANSISTOR SMD MARKING CODE A1
NXP SMD mosfet MARKING CODE
smd TRANSISTOR code marking AV
SMD TRANSISTOR MARKING DE
TRANSISTOR SMD MARKING CODE A1
K TRANSISTOR SMD MARKING CODE
PNP TRANSISTOR SOT457
PNP transistor/Schottky rectifier module
transistor smd yw
PMEM4020AND
|
Untitled
Abstract: No abstract text available
Text: SMM7414DN Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized • Compliant to RoHS Directive 2002/95/EC
|
Original
|
PDF
|
SMM7414DN
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
TVS diode power line Application Note
Abstract: PIN DIAGRAM OF RJ45 to usb dvi schematic sot-23 DIODE marking code D3 TVS diode Application Note MARKING 3B SOT23-6 sot-23-6 marking b on line ups circuit schematic diagram power line network communication rj45 connector to usb port
Text: NUP4201MR6 Low Capacitance TSOP-6 Diode-TVS Array for High Speed Data Lines Protection The NUP4201MR6 transient voltage suppressor is designed to protect high speed data lines from ESD, EFT, and lighting. Features: • Low Capacitance 3 pF Maximum Between I/O Lines
|
Original
|
PDF
|
NUP4201MR6
NUP4201MR6
SC-74,
SC-59
OT-23
NUP4201MR6/D
TVS diode power line Application Note
PIN DIAGRAM OF RJ45 to usb
dvi schematic
sot-23 DIODE marking code D3
TVS diode Application Note
MARKING 3B SOT23-6
sot-23-6 marking b
on line ups circuit schematic diagram
power line network communication
rj45 connector to usb port
|
Untitled
Abstract: No abstract text available
Text: SQS423EN Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • Compliant to RoHS Directive 2002/95/EC
|
Original
|
PDF
|
SQS423EN
AEC-Q101
2002/95/EC
SQS423EN-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SQS401EN Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd
|
Original
|
PDF
|
SQS401EN
2002/95/EC
AEC-Q101
SQS401EN-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SQS405EN Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 12 RDS(on) () at VGS = - 4.5 V 0.020 RDS(on) () at VGS = - 2.5 V 0.026 ID (A) • TrenchFET Power MOSFET
|
Original
|
PDF
|
SQS405EN
2002/95/EC
AEC-Q101
SQS405EN-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SQS462EN Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.063 RDS(on) () at VGS = 4.5 V 0.082 ID (A) 8 Configuration Single PowerPAK 1212-8 D S 3.30 mm • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
SQS462EN
2002/95/EC
AEC-Q101
SQS462EN-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SQ7415AEN Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition - 60 RDS(on) () at VGS = - 10 V 0.065 RDS(on) () at VGS = - 4.5 V 0.090 ID (A) - 16 Configuration
|
Original
|
PDF
|
SQ7415AEN
IEC61249-2-21
2002/95/EC
AEC-Q101
SQ7415AEN-T1-GE3
11-Mar-11
|
marking code Q011
Abstract: No abstract text available
Text: SQS420EN Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • Compliant to RoHS Directive 2002/95/EC
|
Original
|
PDF
|
SQS420EN
AEC-Q101
2002/95/EC
SQS420EN-T1-GE3
11-Mar-11
marking code Q011
|
Untitled
Abstract: No abstract text available
Text: SQS460EN Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.040 RDS(on) () at VGS = 4.5 V 0.055 ID (A) 8 Configuration Single PowerPAK 1212-8 D S 3.30 mm • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
SQS460EN
2002/95/EC
AEC-Q101
SQS460EN-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SQS404EN Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.013 RDS(on) (Ω) at VGS = 4.5 V 0.015 RDS(on) (Ω) at VGS = 2.5 V
|
Original
|
PDF
|
SQS404EN
AEC-Q101
2002/95/EC
SQS404EN-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SQS466EEN Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.048 RDS(on) () at VGS = 4.5 V 0.074 ID (A) 8 Configuration Single PowerPAK 1212-8 D S 3.30 mm • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
SQS466EEN
2002/95/EC
AEC-Q101
SQS466EEN-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SQS464EEN Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Typical ESD Protection 800 V • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
|
Original
|
PDF
|
SQS464EEN
2002/95/EC
AEC-Q101
SQS464EEN-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SQS423EN Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • Compliant to RoHS Directive 2002/95/EC
|
Original
|
PDF
|
SQS423EN
AEC-Q101
2002/95/EC
SQS423EN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
|
|
sqs405
Abstract: No abstract text available
Text: SQS405EN Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 12 RDS(on) () at VGS = - 4.5 V 0.020 RDS(on) () at VGS = - 2.5 V 0.026 ID (A) • TrenchFET Power MOSFET
|
Original
|
PDF
|
SQS405EN
2002/95/EC
AEC-Q101
SQS405EN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
sqs405
|
PIMD3
Abstract: PEMB1
Text: PEMD3; PIMD3; PUMD3 NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k Rev. 11 — 25 September 2013 Product data sheet 1. Product profile 1.1 General description NPN/PNP Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic
|
Original
|
PDF
|
OT666
OT457
OT363
SC-74
SC-88
PEMB11
PUMB11
PEMH11
PUMH11
AEC-Q101
PIMD3
PEMB1
|
land pattern for ppak
Abstract: No abstract text available
Text: SQS484EN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested 40 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V
|
Original
|
PDF
|
SQS484EN
AEC-Q101
SQS484EN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
land pattern for ppak
|
Untitled
Abstract: No abstract text available
Text: SQS400EN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
|
Original
|
PDF
|
SQS400EN
AEC-Q101
2002/95/EC
SQS400EN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
land pattern for TSSOP-8
Abstract: No abstract text available
Text: SQS460EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualified 60 RDS(on) () at VGS = 10 V 0.036 RDS(on) () at VGS = 4.5 V 0.048 ID (A) • 100 % Rg and UIS Tested
|
Original
|
PDF
|
SQS460EN
AEC-Q101
SQS460EN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
land pattern for TSSOP-8
|
Untitled
Abstract: No abstract text available
Text: SQS423EN www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd PRODUCT SUMMARY VDS (V) - 30 RDS(on) () at VGS = - 10 V • 100 % Rg and UIS Tested 0.021 RDS(on) () at VGS = - 4.5 V
|
Original
|
PDF
|
SQS423EN
AEC-Q101
SQS423EN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SQS850EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualified 60 RDS(on) () at VGS = 10 V 0.0215 RDS(on) () at VGS = 4.5 V 0.0261 ID (A) • 100 % Rg and UIS Tested
|
Original
|
PDF
|
SQS850EN
AEC-Q101
SQS850EN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SQS464EEN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Typical ESD Protection 800 V • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd
|
Original
|
PDF
|
SQS464EEN
AEC-Q101
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC
|
Original
|
PDF
|
SQ7415AEN
IEC61249-2-21
AEC-Q101
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SQS462EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
|
Original
|
PDF
|
SQS462EN
AEC-Q101
2002/95/EC
SQS462EN-T1-GE3
11-Mar-11
|
