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    MARKING CODE CA SOT363 Search Results

    MARKING CODE CA SOT363 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    AV-THLIN2BNCM-025 Amphenol Cables on Demand Amphenol AV-THLIN2BNCM-025 Thin-line Coaxial Cable - BNC Male / BNC Male (SDI Compatible) 25ft Datasheet
    CN-DSUB50PIN0-000 Amphenol Cables on Demand Amphenol CN-DSUB50PIN0-000 D-Subminiature (DB50 Male D-Sub) Connector, 50-Position Pin Contacts, Solder-Cup Terminals Datasheet

    MARKING CODE CA SOT363 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IR 822P

    Abstract: B8226 B822P 8227 hsms2827 b8228 B822R hsms-2827 cross reference B822 B 8227 Schottky Quad
    Text: Bay Linear Inspire the Linear Power B8220 Surface Mount Zero Bias Schottky Detector Diodes Series Description Features This specific line of Schottky diodes were specifically designed for both digital and analog applications. This series includes a wide range of specifications and


    Original     		PDF B8220 B822x IR 822P B8226 B822P 8227 hsms2827 b8228 B822R hsms-2827 cross reference B822 B 8227 Schottky Quad

    tel 839b

    Abstract: B849A HSMP-3892 B8394 389C sot363 marking code ca HSMP-3895 839B B8390 B839A
    Text: Bay Linear Inspire the Linear Power B8390 Surface Mount RF PIN Switch Diodes Series Description Features The B-839x series is optimized for switching applications where low resistance at low current and low capacitance are required. The B-849x series products


    Original     		PDF B8390 B-839x B-849x tel 839b B849A HSMP-3892 B8394 389C sot363 marking code ca HSMP-3895 839B B8390 B839A

    INA-02186

    Abstract: MSA0485 sot363 marking code ca INA-10386 AT-41485 msa0185 msa0304 msa-1105 AT-41511 MSA-08
    Text: Hewlett-Packard Company Communication Semiconductor Solutions Division 39201 Cherry Street Newark, CA 94560-4967 Customer Change Notice CCN 9808A For Hewlett-Packard Customer Notification Date: August 24, 1998 Parts Affected: All packing options of the following standard part numbers and their respective specials


    Original     		PDF OT-23 HSMS-280X HSMS-285X HSMS-820X HSMP-380X HSMP-383X HSMP-389X HSMP-481X AT-30533 AT-30511 INA-02186 MSA0485 sot363 marking code ca INA-10386 AT-41485 msa0185 msa0304 msa-1105 AT-41511 MSA-08

    SC70-6L

    Abstract: marking 52 sot363 sot363 marking code 385 SOT-363 mosfet marking s1 sot363 marking 52 sot-363 mosfet 400 V 10A Dual N sot363 marking code ca MARKING CODE ca sot363
    Text: STN6303 Dual N Channel Enhancement Mode MOSFET 1.0A DESCRIPTION STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching


    Original     		PDF STN6303 STN6303 OT-363 SC70-6L 400m-ohm 550m-ohm SC70-6L marking 52 sot363 sot363 marking code 385 SOT-363 mosfet marking s1 sot363 marking 52 sot-363 mosfet 400 V 10A Dual N sot363 marking code ca MARKING CODE ca sot363

    Untitled

    Abstract: No abstract text available
    Text: STN6303 Dual N Channel Enhancement Mode MOSFET 1.0A DESCRIPTION STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching


    Original     		PDF STN6303 STN6303 OT-363 SC70-6L 400m-ohm 550m-ohm

    SC70-6L

    Abstract: STN6335 marking 6l marking s1 sot363 marking 320 SOT-363 SC706L marking 52 sot-363 Dual N
    Text: 5 STN633 STN6335 Dual N Channel Enhancement Mode MOSFET 0.95A DESCRIPTION STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching


    Original     		PDF STN6335 STN6335 OT-363 SC70-6L SC70-6L marking 6l marking s1 sot363 marking 320 SOT-363 SC706L marking 52 sot-363 Dual N

    P channel MOSFET 10A

    Abstract: stp630 MARKING CODE ca sot363 high current sot-363 p-channel mosfet Marking Code 3 sc70-6l sot363 marking code ca STP6308 marking 6l SC70-6L p channel mosfet 10a 20v
    Text: P630 8 ST STP 6308 Dual P Channel Enhancement Mode MOSFET -1.0A DESCRIPTION STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching


    Original     		PDF STP6308 STP6308 OT-363 SC70-6L -20V/1 -20V/0 P channel MOSFET 10A stp630 MARKING CODE ca sot363 high current sot-363 p-channel mosfet Marking Code 3 sc70-6l sot363 marking code ca marking 6l SC70-6L p channel mosfet 10a 20v

    transistor cross reference

    Abstract: RT1N241M N10 SOT363 SOT-363 marking n10 Transistor ROHM N14 N06 TRANSISTOR n10 marking code sot 23 RT1N441C mun5132 DTA114EEA
    Text: New Product Announcement July 2002 Announcing Full Line of 100mA Pre-biased Transistors in Surface Mount Packages Singles in SOT-523, SOT-323, SOT-23 & SC-59 Duals in SOT-363 & SOT-26 / SC-74 NPN PNP R1 R1 R2 R2 NPN Dual R 1 R2 R2 R 1 PNP Dual NPN/PNP Complementary Dual


    Original     		PDF 100mA OT-523, OT-323, OT-23 SC-59 OT-363 OT-26 SC-74 OT-23 transistor cross reference RT1N241M N10 SOT363 SOT-363 marking n10 Transistor ROHM N14 N06 TRANSISTOR n10 marking code sot 23 RT1N441C mun5132 DTA114EEA

    ESD18VU1B-02LS

    Abstract: murata nfc antenna ESD18VU1B-02LRH nfc pcb antenna
    Text: TVS Diodes Transient Voltage Suppressor Diodes ESD18VU1B Series ESD / Transient Protection Diode for Near Field Communication NFC ESD18VU1B-02LRH ESD18VU1B-02LS Data Sheet Revision 1.1, 2012-05-30 Final Power Management & Multimarket Edition 2012-05-30 Published by


    Original     		PDF ESD18VU1B ESD18VU1B-02LRH ESD18VU1B-02LS IEC61000-4-2 ESD18VU1B-02LS murata nfc antenna nfc pcb antenna

    TRANSISTOR SMD MARKING CODE w2

    Abstract: smd TRANSISTOR code marking w2 marking code C1H SMD circuit diagram of philips PC satellite receiver marking code C1H mmic lc oscillator 30ghz shf schematic circuit 6 pin TRANSISTOR SMD CODE PA GSM intercom circuit diagram vlf metal detector schematic murata smd inductors marking codes
    Text: Appendix RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors Philips Semiconductors RF Manual 5th edition APPENDIX Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TVS Diodes Transient Voltage Suppressor Diodes ESD18VU1B-02LRH ESD / Transient Protection Diode for Near Field Communication NFC ESD18VU1B-02LRH Data Sheet Revision 1.4, 2013-08-07 Final Power Management & Multimarket Edition 2013-08-07 Published by Infineon Technologies AG


    Original     		PDF ESD18VU1B-02LRH PG-TSLP-2-17: AN210: AN244:

    MARKING 68W SOT-23

    Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
    Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06


    Original     		PDF 25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23

    transistor Bc 540

    Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W


    Original     		PDF 0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89

    Untitled

    Abstract: No abstract text available
    Text: Ultra Low Capacitance 4 -Line ESD Protection Array Product Description Features The GSE6V8UW is 4-channel very low capacitance ESD transient voltage suppressor which provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge. It is


    Original     		PDF OT-363 Lane11

    Untitled

    Abstract: No abstract text available
    Text: BAS16DW BAS16DW Fast Switching Surface Mount Si-Planar Diodes Schnelle Si-Planar-Dioden für die Oberflächenmontage Version 2014-08-19 ±0.1 2 x 0.65 5 4 ±0.1 6 0.9±0.1 1 2 2.1 Type Code 1.25±0.1 2 Power dissipation – Verlustleistung 200 mW Repetitive peak reverse voltage


    Original     		PDF BAS16DW OT-363 UL94V-0

    SMD MARKING CODE 16t

    Abstract: MARKING CODE 16t sot363 smd marking AV SOT363 Marking 16t sot marking AH sot363 sot363 MARKING 16t smd marking code cp smd diode PD voltage multiple diode smd diode code CP
    Text: MULTIPLE TERMINALS SMD SWITCHING DIODE TWG4148T-16WS Multiple Terminals SMD Switching Diode Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion High Conductance RoHS compliant SOT-363 Mechanical Data SOT-363, Plastic Case


    Original     		PDF TWG4148T-16WS OT-363 OT-363, MIL-STD-750, at800) SMD MARKING CODE 16t MARKING CODE 16t sot363 smd marking AV SOT363 Marking 16t sot marking AH sot363 sot363 MARKING 16t smd marking code cp smd diode PD voltage multiple diode smd diode code CP

    SI1912EDH-T1-E3

    Abstract: Si1912EDH Si1912EDH-T1-GE3 "MARKING CODE CA"
    Text: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si1912EDH SC-70 2002/95/EC OT-363 SC-70 Si191lectual 18-Jul-08 SI1912EDH-T1-E3 Si1912EDH-T1-GE3 "MARKING CODE CA"

    Si1912EDH

    Abstract: No abstract text available
    Text: Si1912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 APPLICATIONS


    Original     		PDF Si1912EDH SC-70 OT-363 SC-70 S-03176--Rev. 05-Mar-01

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    Untitled

    Abstract: No abstract text available
    Text: BC847PN BC847PN Complementary General Purpose Si-Epitaxial PlanarTransistors Komplementäre Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN/PNP NPN/PNP Version 2005-07-06 ±0.1 5 4 ±0.1 6 ±0.1 0.9 1 2 2.1 Type Code 1.25±0.1 2 2 x 0.65 3 2.4


    Original     		PDF BC847PN OT-363 UL94V-0

    MARKING CODE 13t sot363

    Abstract: transistor marking T2 transistor bt2 sot363 13t 13t transistor BC847PN marking 13t MARKING bt1 sot363 BC847PN SOT363 SOT363 13T MARKING
    Text: BC847PN BC847PN Complementary General Purpose Si-Epitaxial PlanarTransistors Komplementäre Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN/PNP NPN/PNP Version 2005-07-06 ±0.1 2 2 x 0.65 4 1 2 2.1 Type Code 1.25±0.1 5 ±0.1 6 0.9±0.1 3 2.4


    Original     		PDF BC847PN OT-363 UL94V-0 MARKING CODE 13t sot363 transistor marking T2 transistor bt2 sot363 13t 13t transistor BC847PN marking 13t MARKING bt1 sot363 BC847PN SOT363 SOT363 13T MARKING

    Si1912EDH

    Abstract: Si1912EDH-T1-E3 Si1912EDH-T1-GE3 SI1912EDH-T1
    Text: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si1912EDH SC-70 2002/95/EC OT-363 SC-70 Si191 11-Mar-11 Si1912EDH-T1-E3 Si1912EDH-T1-GE3 SI1912EDH-T1

    s0317

    Abstract: Si1912EDH
    Text: Si1912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 APPLICATIONS


    Original     		PDF Si1912EDH SC-70 OT-363 SC-70 08-Apr-05 s0317

    sot 363 marking J IX

    Abstract: No abstract text available
    Text: W Â^ Ê H EW LETT ItfS l PACKARD Surface Mount RF Schottky Diodes in SOT-363 SC-70, 6 Lead Technical Data HSM S-280L/M/N/P/R HSMS-281L HSM S-282L/M/N/P/R Features • Surface Mount SOT-363 Package • Low Turn-On Voltage (A s Low as 0.34 V at 1 mA) • Low FIT (Failure in Tim e)


    OCR Scan     		PDF OT-363 SC-70, S-280L/M/N/P/R HSMS-281L S-282L/M/N/P/R OT-363 5966-2019E sot 363 marking J IX