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    MARKING CODE 16G Search Results

    MARKING CODE 16G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING CODE 16G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SLUFM1GU

    Abstract: hirose 6 pin serial 9 pin serial flash memory 16gb format block diagram laptop ac adapter SLUFM4GU2TUI SLUFM16GU2TU-A usb flash
    Text: 1GB to 16GB USB Flash Module SLUFMxxxU2TU I -y USB Solid-State Flash Disk Capacity: 1GB - 16GB USB 2.0 Compliant Form Factors: • Horizontal Mount • Standard 2x5 or Hirose 9-Pin Connector  2x Planar TSOP Flash or 2x Stacked TSOP Flash High Reliability:


    Original     		PDF

    block diagram laptop ac adapter

    Abstract: SLUFM16GU2U-A nand flash pcb layout design serial flash memory 16gb format JESD22-B110 nand flash 16gb hirose 6 pin serial 9 pin
    Text: 1GB to 16GB USB Flash Module www.stec-inc.com SLUFMxGU2U I -y USB Solid-State Flash Disk Capacity: 1GB - 16GB USB 2.0 Compliant Form Factors: • Horizontal Mount • Standard Connector or 9-Pin DConnector  1-High TSOP Flash Placement or Stacked TSOP Flash Placement


    Original     		PDF

    marking code IC .ftf

    Abstract: BFR340T GPS05996
    Text: BFR340T NPN Silicon RF Transistor 3 Target Data • • • • Low Voltage/ Low Current Operation High Transistion Frequency of 16GHz High Insertion Gain Ideal for Low Current and Amplifiers and Oscillators 2 1 VPS05996 ESD: Electrostatic discharge sensitive device,


    Original     		PDF BFR340T 16GHz VPS05996 P-SC-75 GPS05996 marking code IC .ftf BFR340T GPS05996

    Untitled

    Abstract: No abstract text available
    Text: Product Data Sheet Industrial USB Flash Drive unitedCONTRAST II USB2.0 high speed USB Flash Drive unitedCONTRAST 512MByte to 16GByte USB Flash Drive UFD provides non-volatile, solid-state storage in different design options, making it perfectly suited for OEM and industrial market. Swissbit uses high end USB 2.0 flash memory controller, providing high


    Original     		PDF 512MByte 16GByte CH-9552 Rev120

    32GB eMMC

    Abstract: MTFC8GLDEA-4M IT micron eMMC 5.0 emmc bga 162 BGA 221 eMMC micron emmc application note 221 ball eMMC memory emmc 4.41 firmware operation MTFC4G micron emmc 4.5
    Text: Micron Confidential and Proprietary 4GB, 8GB, 16GB, 32GB, 64GB: e•MMC Features e·MMC Memory MTFC4GMDEA-4M IT, MTFC8GLDEA-4M IT, MTFC16GJDEC-4M IT, MTFC32GJDED-4M IT, MTFC64GJDDN-4M IT Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash


    Original     		PDF MTFC16GJDEC-4M MTFC32GJDED-4M MTFC64GJDDN-4M 169-ball 09005aef8523ca91 4gb-64gb 441-it 32GB eMMC MTFC8GLDEA-4M IT micron eMMC 5.0 emmc bga 162 BGA 221 eMMC micron emmc application note 221 ball eMMC memory emmc 4.41 firmware operation MTFC4G micron emmc 4.5

    Untitled

    Abstract: No abstract text available
    Text: Flush Silhouette Switches LB Series / LBW Series ø16mm LB Series Switches and Pilot Lights LB Series Flush Silhouette Switches ø16mm LB Series Miniature Switches and Pilot Lights LBW Series Flush Silhouette Switches S t y lis h a nd Fuct iona l IDEC's extensive range of LB/LBW series switches can be used for a


    Original     		PDF 262-IDEC EP1426-0

    SK162

    Abstract: No abstract text available
    Text: SKFM1640C-D2 FM120-M+ WILLAS THRU THRU 16.0A SCHOTTKY BARRIER RECTIFIERS - 40V- 200V FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER D2PAKRECTIFIERS PACKAGE-20V- 200VSKFM16200C-D2 Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers


    Original     		PDF 00C-D2 FM1200-M 200VSKFM162 OD-123+ SKFM164 FM120-M OD-123H FM120-MH FM130-MH FM140-MH SK162

    emmc bga 162

    Abstract: BGA 221 eMMC MTFC4GLDDQ-4M IT MTFC32GJDDQ-4M IT emmc CID eMMC 4.41 application note MTFC4GLDDQ-4M MMC04G 221 ball eMMC memory MMC08G
    Text: Micron Confidential and Proprietary 4GB, 8GB, 16GB, 32GB: e•MMC Features e·MMC Memory MTFC4GLDDQ-4M IT, MTFC8GLDDQ-4M IT MTFC16GJDDQ-4M IT, MTFC32GJDDQ-4M IT Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash • 100-ball LBGA (RoHS 6/6compliant)


    Original     		PDF MTFC16GJDDQ-4M MTFC32GJDDQ-4M 100-ball 09005aef8523caab 4-32gb 100b-it emmc bga 162 BGA 221 eMMC MTFC4GLDDQ-4M IT MTFC32GJDDQ-4M IT emmc CID eMMC 4.41 application note MTFC4GLDDQ-4M MMC04G 221 ball eMMC memory MMC08G

    LA2F-32C61

    Abstract: TWR542 21c14 LFTD18 LA1F-32C61 OSS-62852F3 LA2L-A1C23 TWR522 LA1F-21C23 LA1F-2C14
    Text: ø16 L6 Series Miniature Control Units Light duty L6 series Suitable for electronic devices and for food processing and packaging industries. • Locking lever removable contact blocks • Bright and clear LED illumination • Gold-clad cross bar contacts and silver contacts


    Original     		PDF EN60947-1, EN60947-5-1, LA2F-32C61 TWR542 21c14 LFTD18 LA1F-32C61 OSS-62852F3 LA2L-A1C23 TWR522 LA1F-21C23 LA1F-2C14

    DPDT 5V

    Abstract: LA1T
    Text: ø16mm L6 Series Miniature Control Units 07/02/08 ø16 L6 Series Miniature Control Units Series L6 Series Miniature Control Units Mounting Hole Size ø16 LA L/LA P Type LA B LA1T LA S Appearance Illuminated Pushbuttons (momentary, maintained) Pilot Lights


    Original     		PDF EP1154-0 DPDT 5V LA1T

    Untitled

    Abstract: No abstract text available
    Text: SDB160G SCHOTTKY RECTIFIER DIODE Schottky Barrier Rectifier General Description The SDB160G surface mounted Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power


    Original     		PDF SDB160G SDB160G OD-123 13-SEP-12 KSD-D6B039-000

    Untitled

    Abstract: No abstract text available
    Text: Product Data Sheet Industrial USB Flash Drive Module U-110 Series USB2.0 high speed U-110 Series USB Flash Drive Module 1GByte to 16GByte USB Flash Drive Module provides non-volatile, solid-state storage in a compact design, making it perfectly suited for embedded applications. The standard USB 2.0 interface provides designers with a true plug-n-play storage


    Original     		PDF U-110 16GByte CH-9552 Rev120

    SLCF16GM4TU

    Abstract: SLCF16GM4TUI mwdma
    Text: 8GB and 16GB CompactFlash Card SLCFxxxM4TU I Solid-State Memory Card (No Moving Parts) Capacity: 8GB - 16GB CFA 4.1 and ATA-7 Compatible PCMCIA Memory Mode: • UDMA Modes Supported: Up to 6 • PIO Modes Timing: up to 80ns PCMCIA I/O Mode:  UDMA Modes Supported: Up to 6


    Original     		PDF

    STEC M2T CF 1.0.0

    Abstract: SLCF128M2TUI 94000-01889 SLCF128M2TUI-S SLCF512M2TUI SLCF16GM2TUI SLCF2G 94000-01889-3A4 SLCF1GM2TUI SLCF256M2TU
    Text: 128MB to 16GB CompactFlash Card www.stec-inc.com SLCFxxxM2TU I (-x) Solid-State Memory Card (No Moving Parts) Capacity: 128MB - 16GB CFA 4.1 and ATA-7 Compatible PCMCIA Memory Mode: • UDMA Modes Supported: Up to 4 • PIO Modes Timing: up to 80ns PCMCIA I/O Mode:


    Original     		PDF 128MB STEC M2T CF 1.0.0 SLCF128M2TUI 94000-01889 SLCF128M2TUI-S SLCF512M2TUI SLCF16GM2TUI SLCF2G 94000-01889-3A4 SLCF1GM2TUI SLCF256M2TU

    DDR3 timing diagram

    Abstract: QuadDie DDR3 DDR3 impedance DDR3 SDRAM micron MT41J2G8 micron marking code information micron power resistor Micron quaddie micron technology 2013 ddr3 78 ball
    Text: Preliminary‡ 16Gb: x4, x8 QuadDie DDR3 SDRAM Features QuadDie DDR3 SDRAM MT41J4G4 – 128 Meg x 4 x 8 Banks x 4 Ranks MT41J2G8 – 64 Meg x 8 x 8 Banks x 4 Ranks Features Options Marking • Configuration – 128 Meg x 4 x 8 banks x 4 ranks – 64 Meg x 8 x 8 banks x 4 ranks


    Original     		PDF MT41J4G4 MT41J2G8 SAC305 09005aef850f7993 DDR3 timing diagram QuadDie DDR3 DDR3 impedance DDR3 SDRAM micron MT41J2G8 micron marking code information micron power resistor Micron quaddie micron technology 2013 ddr3 78 ball

    MT41K2G8

    Abstract: MT41K4G4 MT41K1GM4 micron technology 2013 Micron quaddie
    Text: Preliminary‡ 16Gb: x4, x8 QuadDie DDR3L SDRAM Features QuadDie DDR3L SDRAM MT41K4G4 – 128 Meg x 4 x 8 Banks x 4 Ranks MT41K2G8 – 64 Meg x 8 x 8 Banks x 4 Ranks Features Marking Options • Configuration – 128 Meg x 4 x 8 banks x 4 ranks – 64 Meg x 8 x 8 banks x 4 ranks


    Original     		PDF MT41K4G4 MT41K2G8 SAC305 09005aef850f70c4 MT41K2G8 MT41K4G4 MT41K1GM4 micron technology 2013 Micron quaddie

    DDR3 SDRAM micron

    Abstract: micron technology 2013 DDR3 impedance QuadDie DDR3
    Text: Preliminary‡ 16Gb: x4, x8 QuadDie DDR3 SDRAM Features QuadDie DDR3 SDRAM MT41J4G4 – 128 Meg x 4 x 8 Banks x 4 Ranks MT41J2G8 – 64 Meg x 8 x 8 Banks x 4 Ranks Features Options Marking • Configuration – 128 Meg x 4 x 8 banks x 4 ranks – 64 Meg x 8 x 8 banks x 4 ranks


    Original     		PDF MT41J4G4 MT41J2G8 SAC305 09005aef850f7993 DDR3 SDRAM micron micron technology 2013 DDR3 impedance QuadDie DDR3

    MT41K2G8

    Abstract: No abstract text available
    Text: Preliminary‡ 16Gb: x4, x8 QuadDie DDR3L SDRAM Features QuadDie DDR3L SDRAM MT41K4G4 – 128 Meg x 4 x 8 Banks x 4 Ranks MT41K2G8 – 64 Meg x 8 x 8 Banks x 4 Ranks Features Marking Options • Configuration – 128 Meg x 4 x 8 banks x 4 ranks – 64 Meg x 8 x 8 banks x 4 ranks


    Original     		PDF MT41K4G4 MT41K2G8 78-ball DDR3-1333) DDR3-1066) SAC305 09005aef850f70c4 MT41K2G8

    JD38999

    Abstract: TV07WCI Socapex TV06RW TVS07BCI NATO STANAG 1135 TVP00WCI TVPS00FCI TV07*W MIL-DTL-38999-III tv06rw
    Text: TV CTV - E113/D 20/12/01 16:41 Page 3 Tri-Start TV-CTV TM Main features • Shell material - Composite - Aluminium - Marine bronze - Stainless steel l heno ED Amp O R V L APP QP • Finish - Olive drab cadmium plating - Nickel plating - Passivation for steel versions


    Original     		PDF E113/D MIL-DTL-38999 JD38999/20J E113/C JD38999 TV07WCI Socapex TV06RW TVS07BCI NATO STANAG 1135 TVP00WCI TVPS00FCI TV07*W MIL-DTL-38999-III tv06rw

    hy27u*08ag5

    Abstract: HY27UH08AG5B Hynix 16Gb Nand flash hynix nand NAND FLASH 64MB reset nand flash HYNIX hynix nand edc spare area code hynix nand flash 1.8v 4Gb
    Text: 1 HY27UH08AG5B Series 16Gbit 2Gx8bit NAND Flash 16Gb NAND FLASH HY27UH08AG5B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY27UH08AG5B 16Gbit HY27UH08AG5B hy27u*08ag5 Hynix 16Gb Nand flash hynix nand NAND FLASH 64MB reset nand flash HYNIX hynix nand edc spare area code hynix nand flash 1.8v 4Gb

    HYNIX HY27UH08AG5M

    Abstract: HY27UH08AG5M hynix nand spare area 16gb hy27u*08ag5 HY27UH08AGDM hynix nand flash Hynix 16Gb Nand flash
    Text: Preliminary HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY27UH08AG 16Gbit HY27UH08AG5M HY27UH08AGDM HY27UH08AGDM HYNIX HY27UH08AG5M HY27UH08AG5M hynix nand spare area 16gb hy27u*08ag5 hynix nand flash Hynix 16Gb Nand flash

    HYNIX HY27UH08AG5M

    Abstract: HY27UH08AG5M hy27u*08ag5 hynix nand Hynix 16Gb Nand flash 16G nand HY27U*G5M hynix nand PROGRAMMING marking GG uLGA
    Text: HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY27UH08AG 16Gbit HY27UH08AG5M HY27UH08AGDM HY27UH08AGDM HYNIX HY27UH08AG5M HY27UH08AG5M hy27u*08ag5 hynix nand Hynix 16Gb Nand flash 16G nand HY27U*G5M hynix nand PROGRAMMING marking GG uLGA

    Untitled

    Abstract: No abstract text available
    Text: HT11G - HT18G 1.0AMP Glass Passivated High Efficient Rectifiers TS-1 Features — Glass passivated chip junction — High efficiency, Low VF — High current capability — High reliability — High surge current capability — For use in low voltage, high frequency inverter,


    Original     		PDF HT11G HT18G MIL-STD-202, 22-B106

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


    OCR Scan     		PDF B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16