Untitled
Abstract: No abstract text available
Text: DSC2G03 Silicon NPN epitaxial planar type Unit: mm For high-frequency amplification • Features High transition frequency fT Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: C6 Packaging DSC2G03x0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
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DSC2G03
UL-94
DSC2G03Ã
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KV1410
Abstract: No abstract text available
Text: KV1410 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • Excellent Linearity CV Curve ■ Large Capacitance Ratio (A = 2.00 minimum) with Very Low Series Resistance ■ Two Diodes in a Miniature Package (SOT23-3) ■ Very Small Capacitance Deviation at Tape/Reel
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KV1410
OT23-3)
KV1410
OT23-3
IC-xxx-KV1471E
0798O0
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C3 DIODE
Abstract: C3 SOT23-3 KV1400
Text: KV1400 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • Excellent Linearity CV Curve ■ Large Capacitance Ratio (A = 2.10 minimum) with Very Low Series Resistance ■ Two Diodes in a Miniature Package (SOT23-3) ■ Very Small Capacitance Deviation at Tape/Reel
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KV1400
OT23-3)
KV1400
OT23-3
IC-xxx-KV1471E
0798O0
C3 DIODE
C3 SOT23-3
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CV 203
Abstract: marking code C9 F3 SOT23-3
Text: KV1430 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • Excellent Linearity CV Curve ■ Large Capacitance Ratio (A = 3.70 minimum) with Very Low Series Resistance ■ Two Diodes in a Miniature Package (SOT23-3) ■ Very Small Capacitance Deviation at Tape/Reel
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KV1430
OT23-3)
KV1430
OT2375
IC-xxx-KV1471E
0798O0
CV 203
marking code C9
F3 SOT23-3
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marking code C9
Abstract: CV 203 KV1450
Text: KV1450 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ FM Radio ■ Voltage Controlled Oscillator Very Low Series Resistance Excellent Linearity CV Curve Large Capacitance Ratio (A1 = 4.60 minimum) Two Diodes in a Miniature Package (SOT23-3)
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KV1450
OT23-3)
KV1450
KV450
miniatu28-2375
IC-xxx-KV1471E
0798O0
marking code C9
CV 203
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igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and
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Untitled
Abstract: No abstract text available
Text: AIC1896 1.4MHz SOT23 Current-Mode Step-Up DC/DC Converter FEATURES DESCRIPTION Fixed Frequency 1.4MHz Current-Mode PWM AIC1896 is a current-mode pulse-width modulation Operation. PWM , step-up DC/DC Converter. The built-in high Adjustable Output Voltage up to 30V.
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AIC1896
AIC1896
200mA
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KV1450
Abstract: F5 MARK
Text: KV1450 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ FM Radio ■ Voltage Controlled Oscillator Very Low Series Resistance Excellent Linearity CV Curve Large Capacitance Ratio (A1 = 4.60 minimum) Two Diodes in a Miniature Package (SOT23-3)
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KV1450
OT23-3)
KV1450
KV450
miniatu28-2375
IC-xxx-KV1450
0300O0
F5 MARK
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marking L2 SOT23 6
Abstract: RF1 SOT-23 MARKING C6 SOT23 SMP1345-079LF SK4025 C7L3 Marking C6 SOT23-5 MARKING 518
Text: DATA SHEET SMP1345 Series: Very Low Capacitance, Plastic Packaged Silicon PIN Diodes Features Designed for high-isolation LNB, WLAN and wireless switch applications ● Very low insertion loss 0.4 dB ● 0.15 pF capacitance ● Available lead (Pb)-free and RoHS-compliant MSL-1 @ 250 °C per
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SMP1345
J-STD-020
OT-23
marking L2 SOT23 6
RF1 SOT-23
MARKING C6 SOT23
SMP1345-079LF
SK4025
C7L3
Marking C6 SOT23-5
MARKING 518
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CL01 DIODE
Abstract: No abstract text available
Text: ETR0329-002 •GENERAL DESCRIPTION XC6218 series are highly precise, low noise, positive voltage LDO regulators manufactured using CMOS processes. The series achieves very low supply current, 1.0 A TYP. and consists of a reference voltage source, an error amplifier,
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ETR0329-002
XC6218
SSOT-24
100mV
CL01 DIODE
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marking W26 sot23
Abstract: SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89
Text: PACKAGE OUTLINES Linear ICs SURFACE MOUNT PACKAGES SOT23-3 SOT-23 0.7 1.0 3 e1 2.4 Marking e 0.95 e 0.95 e1 1.90 Recommended Mounting Pad + 0.1 0.4 0.95 2 1.6 0.1 1.1 0 - 0.1 1.4 max (0.3) 2.9 max. e 15 0.95 (0.4) 0.15 e + 0.1 1 C1 0.1 + 0.3 2.8 Dimensions are shown in millimeters
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OT23-3
OT-23)
OT23-5
OT-25)
TK73249M
OT23L-8
TK73250M
TK73255M
marking W26 sot23
SOT23-5 marking 016
sot23 w32
Marking c9 SOT23-5
W32 MARKING
SOT23-6 MARKING b4
sot89-5 PAD
Marking P35 sot89
SOT23-5 MARKING g5
Marking code 33 29 SOT89
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MRF18060A
Abstract: smd transistor marking z3 archive smd transistor marking j2 smd transistor marking z1
Text: Freescale Semiconductor Technical Data Document Number: MRF18060A-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18060A--1
MRF18060ALSR3
MRF18060A--1
MRF18060A
smd transistor marking z3
archive
smd transistor marking j2
smd transistor marking z1
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TLX8-0300
Abstract: transistor J585
Text: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 8, 10/2008 RF Power Field Effect Transistor MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090A
MRF18090AR3
TLX8-0300
transistor J585
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 8, 10/2008 RF Power Field Effect Transistor MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090A
MRF18090AR3
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si3054
Abstract: Si3052 Si3019 Application Note MIL-C-8 rj11 pcb mount ON MARKING R59 sot89 RJ11 4/4 connector RJ11 diagram Si3019 AN67
Text: AN67 Si3050/52/54/56 L A Y O U T G U I D E L I N E S Description The Si305x chipsets improve upon Silicon Laboratories’ groundbreaking family of silicon direct access arrangement DAA products by providing the highest integration, lowest cost, and smallest area DAA solution
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Si3050/52/54/56
Si305x
Si305x,
si3054
Si3052
Si3019 Application Note
MIL-C-8
rj11 pcb mount
ON MARKING R59 sot89
RJ11 4/4 connector
RJ11 diagram
Si3019
AN67
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KV1735STL-G
Abstract: KV1735RTL-G KV1735
Text: KV1735 9V Series VCD for FM Tuning 9V系FM用VCD Feature Included Twin Element ツインタイプ素子1組内蔵 Very Small Tolerance of Element Being Next Device To Each Other 小さい隣接デバイス間容量偏差 Excellent Linearity of the C-V Curve
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KV1735
100MHz
50MHz
70MHz
KV1735STL-G
KV1735RTL-G
KV1735
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KV1735STL-G
Abstract: top marking 7485
Text: KV1735 9V Series VCD for FM Tuning 9V系FM用VCD Feature Included Twin Element ツインタイプ素子1組内蔵 Very Small Tolerance of Element Being Next Device To Each Other 小さい隣接デバイス間容量偏差 Excellent Linearity of the C-V Curve
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KV1735
KV1735
100MHz
measure14
70MHz
50MHz
100MHz
KV1735STL-G
top marking 7485
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Untitled
Abstract: No abstract text available
Text: TKV1750A 9V Series VCD for FM Tuning 9V系FM用VCD Feature Included Twin Element ツインタイプ素子1組内蔵 Very Small Tolerance of Element Being Next Device To Each Other 小さい隣接デバイス間容量偏差 Excellent Linearity of the C-V Curve
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TKV1750A
100MHz
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transistor 131
Abstract: MRF18060ALR3 transistor Z6 MRF18060A
Text: Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 9, 5/2006 RF Power Field Effect Transistors MRF18060ALR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18060A
MRF18060ALR3
MRF18060ALSR3
transistor 131
transistor Z6
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marking WB1 sot-23
Abstract: marking WB2 sot-23 MARKING J3 SOT-23 CRCW08051001FKEA wb1 sot-23 ATC100B220GT500XT WB1 SOT23 22 pf capacitor datasheet ATC100B220GT500X MARKING WB1
Text: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband
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MRF9080
MRF9080LR3
marking WB1 sot-23
marking WB2 sot-23
MARKING J3 SOT-23
CRCW08051001FKEA
wb1 sot-23
ATC100B220GT500XT
WB1 SOT23
22 pf capacitor datasheet
ATC100B220GT500X
MARKING WB1
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marking WB1 sot-23
Abstract: marking WB2 sot-23 transistor WB1
Text: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source
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MRF9080
MRF9080LSR3
marking WB1 sot-23
marking WB2 sot-23
transistor WB1
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diode RU3
Abstract: SMP1345 SMP1345-003 SMP1345-004 SMP1345-005 SMP1345-518 marking c7 sot-23 SK402
Text: DATA SHEET SMP1345 Series: Very Low Capacitance Plastic Packaged Silicon PIN Diodes Features Designed for high isolation LNB, WLAN and wireless switch applications ● Very low insertion loss 0.4 dB ● 0.15 pF capacitance ● Available lead (Pb)-free MSL-1 @ 250 °C per JEDEC J-STD-020
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SMP1345
J-STD-020
diode RU3
SMP1345-003
SMP1345-004
SMP1345-005
SMP1345-518
marking c7 sot-23
SK402
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NIPPON CAPACITORS
Abstract: Transistor J438 CRCW08051001FKEA MRF21010
Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21010--2
MRF21010LSR1
MRF21010--2
NIPPON CAPACITORS
Transistor J438
CRCW08051001FKEA
MRF21010
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CRCW08051001FKEA
Abstract: TLX8-0300 C-XM-99-001-01 pd cms NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor atc100B100GT500XT marking us capacitor pf l1 MRF21010
Text: Document Number: MRF21010-2 Rev. 11, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21010--2
MRF21010LSR1
CRCW08051001FKEA
TLX8-0300
C-XM-99-001-01
pd cms
NIPPON CAPACITORS
bourns 3224w
FM LDMOS freescale transistor
atc100B100GT500XT
marking us capacitor pf l1
MRF21010
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