MHDR1X2
Abstract: CR3216-1206 d9 dl sot23 Capacitor Semiconductor SIM Model "EI CORE" Si7156DN MHDR1X MLP44-16 planar transformer layout EI 33 transformer
Text: SiP11206DB Vishay Siliconix 200 W 1/16th Brick IBC Demo Board using SiP11206 DESCRIPTION SiP11206 is a half-bridge controller for intermediate bus converters. While SiP11206 allows for overall better efficiency through out the input voltage range, since its duty
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SiP11206DB
1/16th
SiP11206
BAS16
MMUN2213LT1G
S09-0324-Rev.
MHDR1X2
CR3216-1206
d9 dl sot23
Capacitor Semiconductor SIM Model
"EI CORE"
Si7156DN
MHDR1X
MLP44-16
planar transformer layout
EI 33 transformer
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Untitled
Abstract: No abstract text available
Text: BAR63V-05 Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-23 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-05 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-05
OT-23
BAR63V-05
2002/95/EC
2002/96/EC
OT-23
D-74025
15-Apr-05
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BAR63V-05
Abstract: BAR63V-05-GS08 BAR63V-05-GS18
Text: BAR63V-05 Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-23 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-05 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-05
OT-23
BAR63V-05
OT-23
D-74025
24-Aug-04
BAR63V-05-GS08
BAR63V-05-GS18
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Untitled
Abstract: No abstract text available
Text: LM2735 www.ti.com SNVS485F – JUNE 2007 – REVISED APRIL 2013 LM2735/LM2735-Q1 520kHz/1.6MHz – Space-Efficient Boost and SEPIC DC-DC Regulator Check for Samples: LM2735 FEATURES DESCRIPTION • • • The LM2735 is an easy-to-use, space-efficient 2.1A
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LM2735
SNVS485F
LM2735/LM2735-Q1
520kHz/1
LM2735
520kHz
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Untitled
Abstract: No abstract text available
Text: LM2735 www.ti.com SNVS485F – JUNE 2007 – REVISED APRIL 2013 LM2735/LM2735-Q1 520kHz/1.6MHz – Space-Efficient Boost and SEPIC DC-DC Regulator Check for Samples: LM2735 FEATURES DESCRIPTION • • • The LM2735 is an easy-to-use, space-efficient 2.1A
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LM2735
SNVS485F
LM2735/LM2735-Q1
520kHz/1
LM2735
520kHz
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LM2735
Abstract: No abstract text available
Text: LM2735 www.ti.com SNVS485F – JUNE 2007 – REVISED APRIL 2013 LM2735/LM2735-Q1 520kHz/1.6MHz – Space-Efficient Boost and SEPIC DC-DC Regulator Check for Samples: LM2735 FEATURES DESCRIPTION • • • The LM2735 is an easy-to-use, space-efficient 2.1A
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LM2735
SNVS485F
LM2735/LM2735-Q1
520kHz/1
LM2735
520kHz
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BAR63V-05
Abstract: BAR63V-05-GS08 BAR63V-05-GS18
Text: BAR63V-05 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-23 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-05 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-05
OT-23
BAR63V-05
OT-23)
D-74025
26-Apr-04
BAR63V-05-GS08
BAR63V-05-GS18
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BAR63V-05
Abstract: BAR63V-05-GS08 BAR63V-05-GS18
Text: BAR63V-05 Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-23 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-05 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-05
OT-23
BAR63V-05
2002/95/EC
2002/96/EC
08-Apr-05
BAR63V-05-GS08
BAR63V-05-GS18
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Untitled
Abstract: No abstract text available
Text: LM2735 www.ti.com SNVS485F – JUNE 2007 – REVISED APRIL 2013 LM2735/LM2735-Q1 520kHz/1.6MHz – Space-Efficient Boost and SEPIC DC-DC Regulator Check for Samples: LM2735 FEATURES DESCRIPTION • • • The LM2735 is an easy-to-use, space-efficient 2.1A
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LM2735
SNVS485F
LM2735/LM2735-Q1
520kHz/1
LM2735-Y)
LM2735-X)
OT-23,
LM2735-Q1
AEC-Q100
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Untitled
Abstract: No abstract text available
Text: LM2735 www.ti.com SNVS485F – JUNE 2007 – REVISED APRIL 2013 LM2735/LM2735-Q1 520kHz/1.6MHz – Space-Efficient Boost and SEPIC DC-DC Regulator Check for Samples: LM2735 FEATURES DESCRIPTION • • • The LM2735 is an easy-to-use, space-efficient 2.1A
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LM2735
SNVS485F
LM2735/LM2735-Q1
520kHz/1
LM2735
520kHz
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1N5225
Abstract: 1N5267 MMBZ5225-V MMBZ5267-V MMSZ5225B-V
Text: MMSZ5225-V to MMSZ5267-V Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes. • Standard Zener voltage tolerance is ± 5 % e3 with a "B" suffix e.g.: MMSZ5225B-V , suffix “C” is ± 2 % tolerance • These diodes are also available in MiniMELF case
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MMSZ5225-V
MMSZ5267-V
MMSZ5225B-V)
TZM5225
TZM5267,
DO-35
1N5225
1N5267
MMBZ5225-V
MMBZ5267-V.
1N5225
MMBZ5225-V
MMBZ5267-V
MMSZ5225B-V
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POWERPAK SO8
Abstract: Philips 1812 footprints bas16 philips d9 dl sot23 BZX384B11-V marking C5 SOT23-5 VISHAY 3216FF5-r Q1/Mark is CK 0603 diode LM4120 R112426000
Text: SiP11205/06DB Vishay Siliconix Intermediate Bus Converter Demo Board Using SiP11205 or SiP11206 INTRODUCTION Both SiP11205 and SiP11206 are controllers for half-bridge intermediate bus converters. The difference between SiP11205 and SiP11206 is that SiP11205 has built-in feedforward circuitry and SiP11206 does not. The feed-forward
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SiP11205/06DB
SiP11205
SiP11206
POWERPAK SO8
Philips 1812 footprints
bas16 philips
d9 dl sot23
BZX384B11-V
marking C5 SOT23-5 VISHAY
3216FF5-r
Q1/Mark is CK 0603 diode
LM4120
R112426000
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marking codes n1 transistors sot-23
Abstract: MMSZ5258 m1 marking code marking J1 sot-23 MMSZ5261 sot-23 Marking N5 1N5225 1N5267 DO35 MMBZ5225
Text: MMSZ5225 thru MMSZ5267 Vishay Semiconductors formerly General Semiconductor Zener Diodes VZ Range 3.0 to 75V Power Dissipation 500mW SOD-123 .022 0.55 Cathode Band 0.055 (1.40) 0.055 (1.40) 0.094 (2.40) .006 (0.15) max. .053 (1.35) max. .067 (1.70) .055 (1.40)
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MMSZ5225
MMSZ5267
500mW
OD-123
OD-123
D3/10K
30K/box
02-May-02
marking codes n1 transistors sot-23
MMSZ5258
m1 marking code
marking J1 sot-23
MMSZ5261
sot-23 Marking N5
1N5225
1N5267
DO35
MMBZ5225
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Si2315DS
Abstract: Si2315DS-T1
Text: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.055 @ VGS = - 4.5 V "3.5 0.075 @ VGS = - 2.5 V "3 0.118 @ VGS = - 1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2315DS-T1 Top View
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Si2315DS
O-236
OT-23)
Si2315DS-T1
S-31990--Rev.
13-Oct-03
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Untitled
Abstract: No abstract text available
Text: BAR63V-05 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-05 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-05
OT-23
BAR63V-05
D-74025
12-Sep-03
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Untitled
Abstract: No abstract text available
Text: BAR63V-05 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-23 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-05 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-05
OT-23
BAR63V-05
D-74025
12-Dec-03
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Untitled
Abstract: No abstract text available
Text: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "3.5 0.075 @ VGS = –2.5 V "3 0.118 @ VGS = –1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2315DS (C5)* *Marking Code
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Si2315DS
O-236
OT-23)
S-56947--Rev.
28-Dec-98
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c5 marking code
Abstract: Si2315DS Si2315DS-T1
Text: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.055 @ VGS = - 4.5 V "3.5 0.075 @ VGS = - 2.5 V "3 0.118 @ VGS = - 1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2315DS-T1 Top View
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Si2315DS
O-236
OT-23)
Si2315DS-T1
08-Apr-05
c5 marking code
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Untitled
Abstract: No abstract text available
Text: MMSZ5225-V to MMSZ5267-V Vishay Semiconductors Small Signal Zener Diodes Features • Silicon planar power Zener ziodes. • Standard Zener voltage tolerance is ± 5 % with a “B” suffix e.g.: MMSZ5225B-V , suffix “C” is ± 2 % tolerance • These diodes are also available in
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MMSZ5225-V
MMSZ5267-V
MMSZ5225B-V)
TZM5225
TZM5267,
DO-35
1N5225
1N5267
OT-23
MMBZ5225-V
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MMSZ5225B-V
Abstract: 1N5225 1N5267 MMBZ5225-V MMBZ5267-V MMSZ5245
Text: MMSZ5225-V to MMSZ5267-V Vishay Semiconductors Small Signal Zener Diodes Features • Silicon planar power zener ziodes. • Standard zener voltage tolerance is ± 5 % with a "B" suffix e.g.: MMSZ5225B-V , suffix “C” is ± 2 % tolerance • These diodes are also available in
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MMSZ5225-V
MMSZ5267-V
MMSZ5225B-V)
TZM5225
TZM5267,
DO-35
1N5225
1N5267
OT-23
MMBZ5225-V
MMSZ5225B-V
MMBZ5225-V
MMBZ5267-V
MMSZ5245
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marking code 41.600
Abstract: mar-06 transistor MMSZ5232 sot23 n2 Diode Zener M2 MARKING SOT23 marking code 10 sot23 marking code E5 sot23 marking diode J4 marking E5 N1 MARKING CODE SOT23
Text: MMSZ5225-V to MMSZ5267-V Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes. • Standard Zener voltage tolerance is ± 5 % e3 with a "B" suffix e.g.: MMSZ5225B-V , suffix “C” is ± 2 % tolerance • These diodes are also available in MiniMELF case
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MMSZ5225-V
MMSZ5267-V
MMSZ5225B-V)
TZM5225
TZM5267,
DO-35
1N5225
1N5267
MMBZ5225-V
MMBZ5267-V.
marking code 41.600
mar-06 transistor
MMSZ5232 sot23
n2 Diode Zener
M2 MARKING SOT23
marking code 10 sot23
marking code E5 sot23
marking diode J4
marking E5
N1 MARKING CODE SOT23
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Si2315DS
Abstract: Si2315DS-T1
Text: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.055 @ VGS = - 4.5 V "3.5 0.075 @ VGS = - 2.5 V "3 0.118 @ VGS = - 1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2315DS-T1 Top View
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Si2315DS
O-236
OT-23)
Si2315DS-T1
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: MMSZ5225-V to MMSZ5267-V Vishay Semiconductors Small Signal Zener Diodes Features • Silicon planar power zener ziodes. • Standard zener voltage tolerance is ± 5 % with a "B" suffix e.g.: MMSZ5225B-V , suffix “C” is ± 2 % tolerance • These diodes are also available in
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MMSZ5225-V
MMSZ5267-V
MMSZ5225B-V)
TZM5225
TZM5267,
DO-35
1N5225
1N5267
OT-23
MMBZ5225-V
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vishay siliconix code marking
Abstract: C5 MARKING
Text: SÌ2315DS VISHAY Siliconix T P-Channel 1.25-W, 1.8-V G-S MOSFET New Product PRODUCT SUM M ARY r DS(on) (-2) I d (A) 0.055 @ VGS = —4.5 V ±3 .5 0.075 @ VGS = -2 .5 V ±3 0.118 @ VGS = —1.8 V ±2 V ds (V) -1 2 TO-236 (SOT-23) :-£ÿ Top View Si2315DS (C5)*
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2315DS
O-236
OT-23)
Si2315DS
S-56947--
28-Dec-98
vishay siliconix code marking
C5 MARKING
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