Untitled
Abstract: No abstract text available
Text: BFS17S NPN Silicon RF Transistor 4 For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
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BFS17S
VPS05604
EHA07196
OT363
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BFS17S
Abstract: VPS05604 NPN marking MCs
Text: BFS17S NPN Silicon RF Transistor 4 For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
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BFS17S
VPS05604
EHA07196
OT363
Aug-20-2001
BFS17S
VPS05604
NPN marking MCs
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DIN 6784 c1
Abstract: BCR108S BFS17S E6327 VPS05604
Text: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
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BFS17S
VPS05604
EHA07196
OT363
DIN 6784 c1
BCR108S
BFS17S
E6327
VPS05604
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VPS05604
Abstract: bfs 11
Text: BFS 17S NPN Silicon RF Transistor 4 For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363
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VPS05604
EHA07196
OT-363
Oct-25-1999
VPS05604
bfs 11
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications C1 B2 E2 Marking :1C E1 B1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-363
BC847S
OT-363
100mA
100MHz
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ic7001
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications C1 B2 E2 Marking :1C E1 B1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-363
BC847S
OT-363
ic7001
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marking s6 sot363
Abstract: No abstract text available
Text: CYStech Electronics Corp. SOT-363 Dimension Style: Pin 1. Emitter1 E1 Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Marking: 6-Lead SOT-363 Plastic Surface Mounted Package CYStek Package Code: S6 *:Typical
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OT-363
026BSC
65BSC
UL94V-0
marking s6 sot363
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183S
Abstract: Q62702-C2377
Text: BCR 183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1 = 10kΩ, R2 = 10kΩ Type Marking Ordering Code Pin Configuration BCR 183S WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
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Q62702-C2377
OT-363
Nov-27-1996
183S
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6c2 transistor
Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
Text: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor
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OT-363
Q62702-F1645
Dec-18-1996
6c2 transistor
transistor marking MCs
Q62702-F1645
transistor BFs 18
SOT 23 CODE MCS
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Transistor 3904 Datasheet
Abstract: No abstract text available
Text: MMDT3946 40V COMPLEMENTARY NPN-PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • • • • • • • • • Complementary Pair One 3904-Type NPN One 3906-Type PNP Ultra-Small Surface Mount Package Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching
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MMDT3946
OT363
3904-Type
3906-Type
AEC-Q101
J-STD-020
MIL-STD-202,
DS30123
Transistor 3904 Datasheet
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Analog Switch
Abstract: SC70-6
Text: G3202 Global Mixed-mode Technology Inc. 1Ω SPDT Analog Switch Features General Description The G3202 is a low on-resistance, SPDT Single-Pole/Double-Throw analog switch that operates from a 1.65V to 5.5V supply. The device offers an excellent ON-resistance matching, and low total harmonic distortion (THD) performance. The device is
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G3202
G3202
G3202BTL1U
G3202BTL2U
SC-70-6
OT-363)
G3202BB21U
Analog Switch
SC70-6
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Field-Effect Transistors
Abstract: SOT54variant diodes PACKAGE
Text: DISCRETE SEMICONDUCTORS Package outlines Small-signal Field-effect Transistors and Diodes 1999 May 11 PACKAGE INFORMATION Page SOD68 . SOD110 . SOD323 . SOD523 . SOT23 . SOT54 . SOT54variant . SOT143B . SOT143R . SOT323 . SOT343N
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OD110
OD323
OD523
OT54variant
OT143B
OT143R
OT323
OT343N
OT343R
OT363
Field-Effect Transistors
SOT54variant
diodes PACKAGE
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Untitled
Abstract: No abstract text available
Text: G3202A Global Mixed-mode Technology Inc. 1Ω SPDT Analog Switch Features General Description ̈ The G3202A is a low on-resistance, SPDT Single-Pole/Double-Throw analog switch that operates from a 1.65V to 5.5V supply. The device offers an excellent ON-resistance matching, and low total harmonic distortion (THD) performance. The device is
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G3202A
G3202A
G3202BTL1U
G3202BTL2U
SC-70-6
OT-363)
G3202BB21U
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marking 26 spdt sot363
Abstract: marking B7A
Text: UM3157 Low-Voltage SPDT Analog Switch UM3157 SC70-6/SC88/SOT363 General Description The UM3157 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very low propagation delay and RDS ON resistances while maintaining
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UM3157
UM3157
SC70-6/SC88/SOT363
marking 26 spdt sot363
marking B7A
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transistor marking 6c1
Abstract: No abstract text available
Text: BC846PN/UPN_BC847PN NPN/PNP Silicon AF Transistor Arrays • For AF input stage and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP transistor in one package BC846PN BC846UPN
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BC846PN/UPN
BC847PN
BC846PN
BC846UPN
EHA07177
OT363
transistor marking 6c1
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BC846U/S
Abstract: BC846U
Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see
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BC846S/
BC846U/
BC847S
BC846S
BC847S:
BC846U
EHA07178
BC846U/S
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1DS sot363
Abstract: marking 1DS sot363
Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see
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BC846S/
BC846U/
BC847S
BC846S
BC847S:
BC846U
EHA07178
1DS sot363
marking 1DS sot363
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marking 1DS sot363
Abstract: 1Ds SOT363 BC846S BC846U BC847S BC847U SC74 1CS MARKING 5 pin IC marking ms marking 1cs
Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see
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BC846S/
BC846U/
BC847S
BC846S
BC847S:
BC846S
BC846U
EHA07178
marking 1DS sot363
1Ds SOT363
BC846U
BC847S
BC847U
SC74
1CS MARKING
5 pin IC marking ms
marking 1cs
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Untitled
Abstract: No abstract text available
Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see
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BC856S/U
BC857S
BC856S
BC857S:
BC856S/U
EHA07175
BC856S
OT363
BC856U
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MARKING CODE CCB
Abstract: BC847S
Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see
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BC846S/
BC846U/
BC847S
BC846S
BC847S:
BC846U
EHA07178
MARKING CODE CCB
BC847S
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BC847PN SOT363
Abstract: BC847PN BC846PN BC846UPN SC74 marking B1 sot363 marking code e2 IC Marking AC 6 PIN
Text: BC846PN/UPN_BC847PN NPN/PNP Silicon AF Transistor Arrays • For AF input stage and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP transistor in one package • Pb-free (RoHS compliant) package 1)
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BC846PN/UPN
BC847PN
BC846PN
BC846UPN
EHA07177
OT363
BC847PN SOT363
BC847PN
BC846PN
BC846UPN
SC74
marking B1 sot363
marking code e2
IC Marking AC 6 PIN
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sot363 marking DATE code
Abstract: marking AF BC856S BC856U BC857S BC857U SC74 marking B1 sot363 marking 3cs 3Ds SOT363
Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see
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BC856S/U
BC857S
BC856S
BC857S:
BC856S/U
EHA07175
BC856S
OT363
BC856U
sot363 marking DATE code
marking AF
BC856U
BC857S
BC857U
SC74
marking B1 sot363
marking 3cs
3Ds SOT363
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Q62702-C2377
Abstract: vk sot-363 marking 7S Marking wms sot marking code vk, sot-363
Text: SIEMENS BCR 183S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, 4 driver circuit 5 6 • Built in resistor R1 = 10kii, R2 = 10k£2 » ^ 3 2 1 Marking Ordering Code Pin Configuration BCR183S WMs CM II CO Q62702-C2377 1=E1 2=B1
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OCR Scan
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10kii,
VPS05604
BCR183S
OT-363
Q62702-C2377
300ns;
vk sot-363
marking 7S
Marking wms sot
marking code vk, sot-363
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit ►Built in resistor Ri = 10kii, R2 = 10k£2 Type Marking Ordering Code Pin Configuration BCR 183S WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
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OCR Scan
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PDF
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BCR183S
10kii,
Q62702-C2377
OT-363
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