mark a3 sot23
Abstract: MARKING A3 sot23 KDS181
Text: SEMICONDUCTOR KDS181 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 A3 1 2 Item Marking Description Device Mark A3 KDS181 - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KDS181
OT-23
mark a3 sot23
MARKING A3 sot23
KDS181
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ISS181
Abstract: 1SS181 MARKING A3
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 Switching DIODES SOT-23 FEATURES y Low forward voltage : VF 3 =0.92V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1. CATHODE MARKING: A3 2. CATHODE 3. ANODE
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OT-23
1SS181
OT-23
100mA
ISS181
ISS181
1SS181
MARKING A3
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smd sot23 marking A3
Abstract: smd diode marking A3 sot23 DIODE smd marking A3 smd transistor marking A3 sot-23 packing a3 CMBD2835 CMBD2836
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 3 SOT-23 Formed SMD Package Pin Configuration 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2
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CMBD2835
CMBD2836
OT-23
CMBD2835
CMBD2836
C-120
2836Rev050302
smd sot23 marking A3
smd diode marking A3 sot23
DIODE smd marking A3
smd transistor marking A3
sot-23 packing a3
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Untitled
Abstract: No abstract text available
Text: 1SS181 Switching Diodes SOT-23 1. CATHODE 2. CATHODE 3. ANODE Features Low forward voltage : VF 3 =0.92V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: A3 Dimensions in inches and (millimeters) Maximum Ratings @TA=25℃ Parameter Symbol
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1SS181
OT-23
100mA
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1SS181
Abstract: No abstract text available
Text: 1SS181 SILICON EPITAXIAL PLANAR DIODE Features 3 • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 1 2 Marking Code: A3 SOT-23 Plastic Package Applications Ultra high speed switching application Absolute Maximum Ratings Ta = 25OC
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1SS181
OT-23
100mA
1SS181
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marking CODE A3
Abstract: 1SS181 code a3 sot 724 1SS181 a3 sot 23 "marking code A3"
Text: 1SS181 SILICON EPITAXIAL PLANAR DIODE Features x Small package x Low forward voltage x Fast reverse recovery time x Small total capacitance 1. CATHODE 2. CATHODE 3. ANODE Marking Code: A3 SOT-23 Plastic Package Applications Ultra high speed switching application
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1SS181
OT-23
100mA
marking CODE A3
1SS181
code a3 sot
724 1SS181
a3 sot 23
"marking code A3"
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 SOT-23 Switching Diodes FEATURES y Low forward voltage y Fast reverse recovery time MARKING: A3 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage
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OT-23
1SS181
OT-23
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2
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CMBD2835
CMBD2836
OT-23
CMBD2835
CMBD2836
C-120
2836Rev050302
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smd diode marking A3 sot23
Abstract: DIODE smd marking A3 CMBD2835 CMBD2836
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 3 SOT-23 Formed SMD Package Pin Configuration 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2 High-Speed Switching Dual Diodes, Common Anode
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ISO/TS16949
CMBD2835
CMBD2836
OT-23
CMBD2835
CMBD2836
C-120
smd diode marking A3 sot23
DIODE smd marking A3
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Si2303DS
Abstract: A3 MARKING CODE
Text: Si2303DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.240 @ VGS = –10 V –1.7 0.460 @ VGS = –4.5 V –1.3 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2303DS
O-236
OT-23)
S-49557--Rev.
27-Apr-98
A3 MARKING CODE
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Untitled
Abstract: No abstract text available
Text: Si2303DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.240 @ VGS = –10 V –1.7 0.460 @ VGS = –4.5 V –1.3 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2303DS
O-236
OT-23)
08-Apr-05
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Si2303DS
Abstract: A3 MARKING CODE
Text: Si2303DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.240 @ VGS = –10 V –1.7 0.460 @ VGS = –4.5 V –1.3 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2303DS
O-236
OT-23)
18-Jul-08
A3 MARKING CODE
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Vishay diodes code marking
Abstract: Vishay DaTE CODE VISHAY SOT MARKING CODE sot143 marking code A3 DO-214 Marking VISHAY SOT DATE CODE MARKING CODE f5 marking code vishay label BZX 4V7 do-219ab
Text: VISHAY Vishay Semiconductors Marking of Diodes 8 7 6 5 GMDA05-6 Pin 1 1 2 3 4 18954 18583 Figure 4. SO-8 Figure 1. DO-214 L4 A3 View from top R9 F5 Date code: R = Year 9 = Month Cathode band Type code Date code 18920 Figure 5. SOD-123 Type code View from top
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GMDA05-6
DO-214
OD-123
LLP75-6A
OD-323
DO-219AB)
28-Apr-04
BZW03C27
DO-41
OD-64
Vishay diodes code marking
Vishay DaTE CODE
VISHAY SOT MARKING CODE
sot143 marking code A3
DO-214 Marking
VISHAY SOT DATE CODE
MARKING CODE f5
marking code vishay label
BZX 4V7
do-219ab
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Untitled
Abstract: No abstract text available
Text: Si2303ADS Vishay Siliconix New Product P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.240 @ VGS = –10 V –1.4 0.460 @ VGS = –4.5 V –1.0 VDS (V) –30 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2303ADS
O-236
OT-23)
Si2303DS
S-20213â
01-Apr-02
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Philips MARKING CODE
Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
Text: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked
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OT143,
OT323,
OT343,
OT363,
OD110,
OD323
OD523
BF992
PMBF4416A
BF510
Philips MARKING CODE
Datasheets for BB132 varicap
marking code W1
BAT18 A2p
sot143 marking code A5
Marking codes
sot143 marking code A3
marking A5 sot363
marking W1
S13 SOT363
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Untitled
Abstract: No abstract text available
Text: BC847BFA 45V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > 45V IC = 100mA high Collector Current PD = 435mW Power Dissipation 0.48mm package footprint, 16 times smaller than SOT23 Moisture Sensitivity: Level 1 per J-STD-020
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BC847BFA
DFN0806
100mA
435mW
J-STD-020
MIL-STD-202,
X2-DFN0806-3
BC857BFA
DS36019
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Untitled
Abstract: No abstract text available
Text: BC857BFA 45V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > -45V IC = -100mA high Collector Current PD = 435mW Power Dissipation 0.48mm package footprint, 16 times smaller than SOT23 Moisture Sensitivity: Level 1 per J-STD-020
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BC857BFA
DFN0806
-100mA
435mW
J-STD-020
BC847BFA
MIL-STD-202,
AEC-Q101
BC857FA
DS36018
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Untitled
Abstract: No abstract text available
Text: MMBT3904FA 40V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > 40V IC = 200mA high Collector Current PD = 435mW Power Dissipation 2 0.48mm package footprint, 16 times smaller than SOT23 0.4mm height package minimizing off-board profile
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MMBT3904FA
DFN0806
200mA
435mW
MMBT3906FA
AEC-Q101
X2-DFN0806-3
J-STD-020
DS36016
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Untitled
Abstract: No abstract text available
Text: MMBT3906FA 40V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > -40V IC = -200mA high Collector Current PD = 435mW Power Dissipation 2 0.48mm package footprint, 16 times smaller than SOT23 0.4mm height package minimizing off-board profile
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MMBT3906FA
DFN0806
-200mA
435mW
MMBT3904FA
AEC-Q101
X2-DFN0806-3
J-STD-020
DS36017
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UL26
Abstract: 6L-USBLC6-2SC6 USBLC6-2SC6 STMicroelectronics date code format ecopack SMP75-8 JESD97 marking illustrations
Text: USBLC6-2 Very low capacitance ESD protection Features • ■ ■ ■ ■ ■ 2 data lines protection Protects VBUS Very low capacitance: 3.5 pF max. Very low leakage current: 150 nA max. SOT-666 and SOT23-6L packages RoHS compliant SOT23-6L USBLC6-2SC6 Benefits
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OT-666
OT23-6L
OT23-6L
OT-666
UL26
6L-USBLC6-2SC6
USBLC6-2SC6
STMicroelectronics date code format ecopack
SMP75-8
JESD97
marking illustrations
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Untitled
Abstract: No abstract text available
Text: DTA114EM/EE/EUA/ECA/ESA Taiwan Semiconductor Small Signal Product PNP Digital Transistor FEATURES - Built-in bias resistors enable the configuration of SOT523 /SOT323/SOT23 an inverter circuit without connecting external input resistor see equivalent circuit .
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DTA114EM/EE/EUA/ECA/ESA
OT523
/SOT323/SOT23
OT-723
OT-523
S1402004
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sot23 marking y5
Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A
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OT-23
BAL99
BZX84-C43
BAR99
BZX84-C47
BAS16
FMMD914
BAV70
FMMD6050
BAV74
sot23 marking y5
BZX84C18
FMMD914
FMMD6050
BZX84-C27
BAR99
MARKING W4 sot 23
C3V9
C5V1
c5v6
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JR MARKING
Abstract: No abstract text available
Text: IMBD4448 Silicon Epitaxial Planar Diode Fast switching diode in case SOT-23, especially suited for automatic insertion. Top View Marking A3 Top View m SOT-23 Plastic Package Weight approx. 0.008 g Dimensions in mm oo" Absolute M aximum Ratings Symbol Value
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IMBD4448
OT-23,
OT-23
JR MARKING
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marking pk sot23
Abstract: Diode BAV99 SOT23
Text: Surface Mount Switching Diodes 350mW Switching Diodes/SOT23 Type Number Marking Code* Peak Reverse Voltage Maximum Reverse Current @ 25°C LL > vR v <§ U. Ir > PRV Maximum Forward Voltage Drop Capacitance r = V F = 0 Reverse Max. Power Pin Identity Recovery Dissipation See Figs.
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350mW
Diodes/SOT23
BAS16
BAV70
BAV99
BAW56
BAL99
IMBD4148
IMBD4448
BAV100
marking pk sot23
Diode BAV99 SOT23
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