Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
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AEC-Q101
LBC817-16DPMT1G
LBC817-25DPMT1G
LBC817-40DPMT1G
S-LBC817-16DPMT1G
S-LBC817-25DPMT1G
S-LBC817-40DPMT1G
SC-74
Unit-25DPMT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals • We declare that the material of product compliance with RoHS requirements. LBC817-16DPMT1G LBC817-25DPMT1G LBC817-40DPMT1G MAXIMUM RATING - NPN Rating Symbol Value Unit Collector − Emitter Voltage
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LBC817-16DPMT1G
LBC817-25DPMT1G
LBC817-40DPMT1G
SC-74
S17-25DPMT1G
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Untitled
Abstract: No abstract text available
Text: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849
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BC856
BC857
BC858
BC859
OT-23
-100mA
BC846/BC847/BC848/BC849
2002/95/EC
IEC61249
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
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Original
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PDF
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AEC-Q101
LBC817-16DPMT1G
LBC817-25DPMT1G
LBC817-40DPMT1G
S-LBC817-16DPMT1G
S-LBC817-25DPMT1G
S-LBC817-40DPMT1G
SC-74
Unit-25DPMT1G
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transistor 56B marking
Abstract: TRANSISTOR BC 119
Text: BC856/BC857/BC858/BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 65/45/30 Volts POWER SOT- 23 225 mW Unit: inch mm FEATURES .103(2.60) .056(1.40) .047(1.20) Collector Current IC = -100mA Complimentary (NPN) Devices : BC846/BC847/BC848/BC849 Series
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BC856/BC857/BC858/BC859
-100mA
BC846/BC847/BC848/BC849
OT-23
MIL-STD-202
transistor 56B marking
TRANSISTOR BC 119
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Untitled
Abstract: No abstract text available
Text: BC856 SERIES PNP GENERAL PURPOSE TRANSISTORS 30/45/65 Volt VOLTAGE POWER 330 mWatt 0.006 0.15 MIN. FEATURES 0.120(3.04) • General Purpose Amplifier Applications 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849
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BC856
-100mA
BC846/BC847/BC848/BC849
2011/65/EU
IEC61249
OT-23
MIL-STD-750,
2014-REV
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c858
Abstract: BC856R
Text: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit：inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849
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BC856
BC857
BC858
BC859
-100mA
BC846/BC847/BC848/BC849
2002/95/EC
IEC61249
OT-23
OT-23
c858
BC856R
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BC859B-AU
Abstract: transistor BC SERIES BC856B-AU
Text: BC856-AU,BC857-AU,BC858-AU,BC859-AU SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit：inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849
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BC856
BC857
BC858
BC859
-100mA
BC846/BC847/BC848/BC849
FTLUHTXDOLW\V\VWHPFHUWLILFDWH76
2002/95/EC
IEC61249
OT-23
BC859B-AU
transistor BC SERIES
BC856B-AU
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CER0456B
Abstract: MARKING 56B 6
Text: CER0456B 5.8 GHz BPF Rev 1 – Origin Date: July 31, 2006 – Revision Date: January 12, 2007 Features • Low Loss • Low Ripple Description Surface mount, silver Ag coated ceramic filter for use in broadband applications. Weight: 1.1 grams typical Material: Filter is composed of a ceramic
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CER0456B
CER0456B
MARKING 56B 6
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SK 54B
Abstract: marking SK SK 59B
Text: SK52B - SK515B CREAT BY ART 5.0AMPS Surface Mount Schottky Barrier Rectifiers SMB/DO-214AA Pb RoHS COMPLIANCE Features For surface mounted application Metal to sillicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place
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SK52B
SK515B
SMB/DO-214AA
RS-481
SK52B-SK54B
SK55B-SK56B
SK59B-SK515B
SK55B-SK515B
SK52B-SK54B
SK 54B
marking SK
SK 59B
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200mWatts
Abstract: transistor 56B marking
Text: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE CURRENT 30/45/65 Volts 200 mWatts 0.004 0.10 MIN. • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/
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BC856AW
BC859CW
100mA
BC846W/BC847W/BC848W/
BC849W
2002/95/EC
IEC61249
OT-323,
MIL-STD-750,
BC856AW
200mWatts
transistor 56B marking
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Untitled
Abstract: No abstract text available
Text: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE CURRENT 30/45/65 Volts 200 mWatts 0.004 0.10 MIN. • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/
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BC856AW
BC859CW
100mA
BC846W/BC847W/BC848W/
BC849W
2002/95/EC
IEC61249
OT-323,
MIL-STD-750,
2010-REV
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zener 73B
Abstract: smc5346b SMC53
Text: SMC5342B series Surface Mount Zener Diodes SURFACE MOUNT ZENER DIODES 5.0 WATTS P b Lead Pb -Free Features: * Glass passivated chip * Low leakage * Built-in strain relief * Low inductance * High peak reverse power dissipation * For use in stabilizing and clipping circuits with high
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SMC5342B
DO-214AB)
SMC/DO-214AB
MIL-STD-750
04-Nov-09
zener 73B
smc5346b
SMC53
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Untitled
Abstract: No abstract text available
Text: SK52B thru SK515B Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level : level 1, per J-STD-020
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SK52B
SK515B
J-STD-020
2011/65/EU
2002/96/EC
DO-214AA
AEC-Q101
JESD22-B102
D1309050
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smd transistor 41B
Abstract: 5251B SMD 41B sot23 5241B zener 35b smd MARKING 8g 5233B 81F smd CMBZ-5245B SMD marking 8M zener
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS
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OT-23
CMBZ52XX
CMBZ5230B
CMBZ5239B
CMBZ5248B
C-120
smd transistor 41B
5251B
SMD 41B sot23
5241B
zener 35b
smd MARKING 8g
5233B
81F smd
CMBZ-5245B
SMD marking 8M zener
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ZENER 1N5
Abstract: 1N52B 1N52 Hitachi DSA002711
Text: 1N5223B through 1N5258B Silicon Epitaxial Planar Zener Diodes for Voltage Regulation ADE-208-137 Z Preliminary, Rev. 0 Aug. 1993 Features • Glass package DO-35 structure ensures high reliability. • Wide spectrum from 2.7V through 36V of zener voltage provide flexible application.
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1N5223B
1N5258B
ADE-208-137
DO-35
1N5258B
DO-35
1N525
ZENER 1N5
1N52B
1N52
Hitachi DSA002711
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ic 41b sot23
Abstract: 46B smd
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE
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OT-23
CMBZ52XX
CMBZ5230B
CMBZ5239B
CMBZ5248B
C-120
ic 41b sot23
46B smd
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smd transistor 41B
Abstract: SMD 41B sot23 5241B 5252B CMBZ-5251B smd 41B 5233B 5245B CMBZ-5245B CMBZ5230B
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE
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OT-23
CMBZ52XX
CMBZ5230B
CMBZ5239B
CMBZ5248B
C-120
smd transistor 41B
SMD 41B sot23
5241B
5252B
CMBZ-5251B
smd 41B
5233B
5245B
CMBZ-5245B
CMBZ5230B
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ATML U 030
Abstract: ATML H ATMLH ATML U 010 ATML ATML 010 atml h 04 ATML U AT93C66B-MAHM-T atmlhyww
Text: Features • Low-voltage and standard-voltage operation – VCC = 1.7V to 5.5V • User-selectable internal organization • • • • • • – 2K: 256 x 8 or 128 x 16 – 4K: 512 x 8 or 256 x 16 Three-wire serial interface Sequential read operation 2MHz clock rate 5V
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AT93C56B/66B
ATML U 030
ATML H
ATMLH
ATML U 010
ATML
ATML 010
atml h 04
ATML U
AT93C66B-MAHM-T
atmlhyww
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Untitled
Abstract: No abstract text available
Text: SK52B thru SK515B Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020
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SK52B
SK515B
J-STD-020
2011/65/EU
2002/96/EC
DO-214AA
AEC-Q101
D1406034
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ZENER 34b
Abstract: 5252B 5255B zener diode 33B CMBZ52XX 43B MARKING 8f zener CMBZ-5252B 40b marking diode 43b
Text: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B
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OCR Scan
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CMBZ52XX
CMBZ5230B
CMBZ5239B
CMBZ5248B
CMBZ5257B=
CMBZ-5252B
CMBZ-5253B
CMBZ-5254B
ZENER 34b
5252B
5255B
zener diode 33B
43B MARKING
8f zener
40b marking
diode 43b
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Untitled
Abstract: No abstract text available
Text: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0_ “ 2.8 0.14 0.48 0.38 3 2.6 2.4 1.02 7>.8<T 2.00 0.60 0.40 1.80 Marking CMBZ5230B 31B
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OCR Scan
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CMBZ52XX
CMBZ5230B
CMBZ5239B
CMBZ5248B
CMBZ-5252B
CMBZ-5253B
CMBZ-5254B
CMBZ-5255B
CMBZ-5256B
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5251B
Abstract: CMBZ-5251B 5257B zener 35b 43B diode 5233B 5234B CMBZ-5243B marking 43b marking 8G
Text: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN m m Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2.8 0.48 1 0.38 ri 3 i 2.6 1 2.4 11 0.14 _!-02_ 0.89 0.60 0.40 Marking CMBZ5230B 31B
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OCR Scan
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CMBZ52XX
CMBZ5230B
CMBZ5239B
CMBZ5248B
CMBZ5257B=
B3fl33cÃ
CMBZ-5250B
CMBZ-5251B
23fl33R4
5251B
5257B
zener 35b
43B diode
5233B
5234B
CMBZ-5243B
marking 43b
marking 8G
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Untitled
Abstract: No abstract text available
Text: O K I electronic components KGF1181B_ Medium-Power Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1181B is a two-stage medium-power UHF-band amplifier that features high gain, high output power, and low power dissipation. The internally matched 50 i2 input and output
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KGF1181B_
KGF1181B
b7E4E40
KGF1181B
b72424D
022bc
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