chip resistor marking
Abstract: NRC06FxxxxTR 604K-Ohm marking 53d marking 34x NRC06F1273TR 511K-Ohm NRC06F21R0TR NRC06F20R5TR NRC06F2000TR
Text: NIC COMPONENTS CORP. www.nicccomp.com NRC06FxxxxTR 0603 Size Thick Film Chip Resistor Marking Guide 3-Digit Marking Codes for +/-1% F tolerance E96 Values RESISTANCE VALUE NIC P/N 3 DIGIT MARKING 10.0 Ohm NRC06F10R0TR 01X 10.2 Ohm NRC06F10R2TR 02X 10.5 Ohm
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NRC06FxxxxTR
NRC06F10R0TR
NRC06F10R2TR
NRC06F10R5TR
NRC06F10R7TR
NRC06F11R0TR
NRC06F11R3TR
NRC06F11R5TR
NRC06F11R8TR
NRC06F12R1TR
chip resistor marking
604K-Ohm
marking 53d
marking 34x
NRC06F1273TR
511K-Ohm
NRC06F21R0TR
NRC06F20R5TR
NRC06F2000TR
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MMHZ5270BPT
Abstract: GP 52b DIODE marking 24b sot-23 MMHZ5232 MMSZ5247SPT MMPZ5232BPT zener diode in 5229 b MMPZ5250BPT MMPZ5221BPT MMPZ5235BPT
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Marking Min Nom Max Volts Volts Volts Maximum Zener impedance Test current IZT(mA) Maximum reverse leakage current ZZT at IZT (Ω) Zzk (Ω)
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OT-23
MMHZ5270BPT
GP 52b DIODE
marking 24b sot-23
MMHZ5232
MMSZ5247SPT
MMPZ5232BPT
zener diode in 5229 b
MMPZ5250BPT
MMPZ5221BPT
MMPZ5235BPT
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pt 4515
Abstract: MMPZ5250B 52B zener MMSZ5259S MMHZ5246B marking 24b sot-23 MMCZ5248B MMPZ5248B MMDZ5235B MMGZ5242B
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Marking Min Nom Max Volts Volts Volts Test current IZT(mA) Maximum Zener impedance ZZT at IZT (Ω) 30 30 30 30 29 28 24 23 22 19 17 11 7 7
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GRC.1B.260.HR
Abstract: No abstract text available
Text: Motor Controller AC Semiconductor Motor Controller Type RSBS23.A2V.2C24. • Soft starting of 1-Phase Scroll Compressors • Enclosed solution • Integrated current limit • Rated operational voltage: 230 VACrms, 50/60 Hz • Rated operational current: up to 32A: AC-53b
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RSBS23.
AC-53b
RSBS2332A2V
2C24HP
RSBS23xxA2V22C24.
500ms
1500ms
2000ms
GRC.1B.260.HR
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astm D149
Abstract: mcm 350 500 MCM Aluminum Torque D149 MCM in One Catalog D149 diode D543 mcm 250 D-543 Thomas Betts wt
Text: NEMA Terminal Blocks Ultra Heavy Duty DESCRIPTION/APPLICATION This Ultra Heavy Duty line includes two series. The 400 series is rated up to 270 A; the 444 series is rated up to 455 A. 400 SERIES ULTRA HEAVY DUTY DESIGN ADVANTAGES 400 Series • Compact 2/0 or 250 kcmil MCM
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LR25557
E63810
astm D149
mcm 350
500 MCM Aluminum Torque
D149
MCM in One Catalog
D149 diode
D543
mcm 250
D-543
Thomas Betts wt
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d0311
Abstract: Buchanan B104 D0241 buchanan terminal blocks Buchanan 1546143-1 1546235-1 2b104 242 4-1437390-0 BU 110 2B112
Text: BUCHANAN Terminal Blocks Note: All part numbers are RoHS Compliant. Table of Contents—NEMA ETB Overview Selector Chart ………………………………………………………………240-243 Catalog Numbering Code ……………………………………………………………………244
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UL486E
UL1059
MIL-202
d0311
Buchanan B104
D0241
buchanan terminal blocks
Buchanan 1546143-1
1546235-1
2b104
242 4-1437390-0
BU 110
2B112
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NYLON WHITE ROD 66 UL94V-2
Abstract: thermal d242 D0241 Buchanan 921 BU 2735 AS D0222 D0221 2103 datasheet buchanan 200 series MEXICO FUSE
Text: Note: All part numbers are RoHS Compliant. Terminal Blocks Table of Contents—NEMA ETB Overview Selector Chart ………………………………………………………………238-241 Catalog Numbering Code ……………………………………………………………………242
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55-BU
50-BU
53-BU
NYLON WHITE ROD 66 UL94V-2
thermal d242
D0241
Buchanan 921
BU 2735 AS
D0222
D0221
2103 datasheet
buchanan 200 series
MEXICO FUSE
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Untitled
Abstract: No abstract text available
Text: f - Silicon N Channel M O SFET Tetrode 3SE D • 31 BF 989 &53b35Q OOlbTfl? 1 ■ S I P SIEMENS/ S P CL i SEMICONDS For amplifier and mixer stages in UHF and VHF TV tuners Low Input and output capacitance Type Marking Ordering code for versions In bulk Ordering code for
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53b35Q
Q62702-F874
Q62702-F969
23b320
BP989
200MHz;
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ZENER 34b
Abstract: zener diode 33B marking 43b zener 35b 52B zener 46B zener Zener diode 81A MARKING 46B 47B diode 43B diode
Text: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B
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CMBZ52XX
CMBZ5230B
CMBZ5239B
CMBZ5248B
CMBZ5257B=
ZENER 34b
zener diode 33B
marking 43b
zener 35b
52B zener
46B zener
Zener diode 81A
MARKING 46B
47B diode
43B diode
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CMBZ-5240B
Abstract: No abstract text available
Text: 'IL CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1= ANODE 2= NC 3 = CATHODE 3.0_ ~ 2.8 0.14 0.48 538 3 2.6 2.4 _1.02 o.ar 2.00_ 1.80 0.60 0.40 Marking CMBZ5230B 31B
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CMBZ52XX
CMBZ5230B
CMBZ5239B
CMBZ5248B
CMBZ5257B=
ma-5246B
CMBZ-5247B
CMBZ-5248B
CMBZ-5249B
CMBZ-5250B
CMBZ-5240B
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ZENER 34b
Abstract: 5252B 5255B zener diode 33B CMBZ52XX 43B MARKING 8f zener CMBZ-5252B 40b marking diode 43b
Text: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B
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CMBZ52XX
CMBZ5230B
CMBZ5239B
CMBZ5248B
CMBZ5257B=
CMBZ-5252B
CMBZ-5253B
CMBZ-5254B
ZENER 34b
5252B
5255B
zener diode 33B
43B MARKING
8f zener
40b marking
diode 43b
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Untitled
Abstract: No abstract text available
Text: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0_ “ 2.8 0.14 0.48 0.38 3 2.6 2.4 1.02 7>.8<T 2.00 0.60 0.40 1.80 Marking CMBZ5230B 31B
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CMBZ52XX
CMBZ5230B
CMBZ5239B
CMBZ5248B
CMBZ-5252B
CMBZ-5253B
CMBZ-5254B
CMBZ-5255B
CMBZ-5256B
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WM 53B
Abstract: No abstract text available
Text: SIEM ENS PNP Silicon AF Transistors • • • • BC 636 . BC 640 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 635, BC 637, BC 639 NPN Type Marking BC 636 BC 638 BC 640 Ordering Code Q68000-A3365
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Q68000-A3365
Q68000-A3366
Q68000-A3367
EHP00204
EHP00202
EHP00205
flS35bDS
01EDSM2
fl235b05
D1205M3
WM 53B
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78-VII
Abstract: marking c627 Q62702-C626 c626 Q62702-C629 Q62702-C627 Q62702-C628 Q62702-C717 79-IX 79-VII
Text: SIEMENS PNP Silicon AF Transistors • • • • • BCX 78 BCX 79 High current gain Low collector-emitter saturation voltage Low noise at 1 kHz Low noise at low frequencies Complementary types: BCX 58, BCX 59 NPN Type Marking BCX 78 BCX 78-VII BCX 78-VIII
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78-VII
78-IX
79-VII
79-IX
Q62702-C717
Q62702-C626
Q62702-C627
Q62702-C628
marking c627
c626
Q62702-C629
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MIL-P-116
Abstract: XO-53B
Text: PACKAGING METHODS Oscillators and Resistor Networks HYBRID CRYSTAL CLOCK OSCILLATORS [Num bers In brackets Indicate m iW m etere] XO-43B XO-52B XOSM-52B, BE XO-53B XO-54B, BD, BE .550 [13.97] per Tube .570 [14.48] X O -4 3 B , X O -5 3 B , X O -5 4 B , BD, BE: 20 Pieces.
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XO-43B
XO-52B
XOSM-52B,
XO-53B
XO-54B,
ISC-1210
IMC-1210
IMC-1812
ISC-1812
ILB-1206
MIL-P-116
XO-53B
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XO-53B
Abstract: 19.6608 MHz 100PPM XO-53
Text: 4bE J> VISHAY/ DALE ELECTRONICS •IMiaSb'i GGGS'iMfl b « D E I A COMPANY MODEL XO-53B C lock O scillators OF jM tfT Hybrid C rystal, R esistance W elded M eta l P ackage Low P ro file, 2 5 0 KHz to 6 0 M Hz FEATURES • • • • • • Able to withstand flow soldering
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XO-53B
XO-53
100PPM)
19.6608 MHz
100PPM
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XO-53B
Abstract: No abstract text available
Text: A COMPANY MODEL XO-53B Clock O scillators OF j o a l e T Hybrid Crystal, R esistance W elded M etal Package Low Profile, 25 0 KHz to 6 0 MHz FEATURES • • • • • • Able to withstand flow soldering Wide range of standard frequencies available from stock (listed below)
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XO-53B
XO-53
100PPM)
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XO53B
Abstract: No abstract text available
Text: MODEL XO-53B Clock Oscillators, Hybrid Crystal, Resistance Welded Metal Package Low Profile, 250 KHz to 60 MHz FEATURES • Able to withstand flow soldering • Wide range of standard frequencies available from stock listed below • Hermetically sealed package
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XO-53B
XO-53
100PPM)
XO53B
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XO-53B
Abstract: No abstract text available
Text: HYBRID CRYSTAL CLO CK OSCILLATOR MODEL XO-53B, 1*0 MHZ to 50 MHZ Low Profile, Resistance Welded Metal Package FEATtfMES • Able to withstand flow soldering • W ide range of standard frequencies available from stock listed below • Hermetically sealed package
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XO-53B,
XO-53B
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Untitled
Abstract: No abstract text available
Text: MODELS X O -53B and X O -53B E C lo c k O s c illa to rs H y b rid C ry s ta l, 1 .0 M H z to 8 0 M H z FEA TU R ES • TTL compatible • Enabled output optional • Industrial temperature optional • Hermetically sealed package STAN D AR D ELE C TR IC A L SPECIFICATION S
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XO-53
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Untitled
Abstract: No abstract text available
Text: bb53T31 0025566 53b • APX N AMER PHILIPS/DISCRETE BSR20 BSR20A b?E D 7 V. SILICON P-N-P HIGH-VOLTAGE TRANSISTORS P-N-P high-voltage small-signal transistors for general purposes and especially in telephony applications and encapsulated in a SOT-23 envelope.
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bb53T31
BSR20
BSR20A
OT-23
BSR19
BSR19A.
BSR20
bbS3T31
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Untitled
Abstract: No abstract text available
Text: N AflER PHILIPS/DISCRETE b^E D m bb53^31 DDSb4b5 53b IAPX BY328 32 kHz PARALLEL EFFICIENCY DIODE Double-diffused glass passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as an efficiency diode in transistorized horizontal deflection circuits of television
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BY328
bbS3T31
BY328.
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SOT-23 MARKING T36
Abstract: BSR19 BSR19A BSR20 BSR20A
Text: • 1^53^31 0025560 53b ■ APX N AMER PHILIPS/DISCRE TE BSR20 BSR20A t.7E D SILICON P-N-P HIGH-VOLTAGE TRANSISTORS P-N-P high-voltage small-signal transistors for general purposes and especially in telephony applications and encapsulated in a SOT-23 envelope.
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BSR20
BSR20A
OT-23
BSR19
BSR19A.
BSR20
250mA
SOT-23 MARKING T36
BSR19A
BSR20A
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Untitled
Abstract: No abstract text available
Text: International ik » i Rectifier uassMsa ooisaba 53b HEXFET Power MOSFET INTERNATIO N AL R E C T IF IE R • • • • • • • IN R PD-9.910 IR L 5 4 0 S Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive
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SMD-220
IRL540S
4AS54S2
0D15673
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