STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
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OD-80
OT-223
OT-89
STK and STR integrated circuits
transistor smd zG 1e
STR-Z4579
Turuta
6 pin TRANSISTOR SMD CODE PA
transistor 5d smd
ELM85361A
STK and STR integrated circuits, 2011 edition
5g smd transistor
15D diode smd code
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor We declare that the material of product compliance with RoHS requirements. L2SC4083QWT1G z 3 Ordering Information 1 2 Device Marking Shipping L2SC4083QWT1G 4Q 3000/Tape&Reel L2SC4083QWT1G 4Q 10000/Tape&Reel
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L2SC4083QWT1G
3000/Tape
10000/Tape
SC-70/SOT-323
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REF 0425
Abstract: L2SC4083QWT1G marking 4Q
Text: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor We declare that the material of product compliance with RoHS requirements. L2SC4083QWT1G z 3 Ordering Information 1 2 Device Marking Shipping L2SC4083QWT1G 4Q 3000/Tape&Reel L2SC4083QWT1G 4Q 10000/Tape&Reel
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L2SC4083QWT1G
3000/Tape
10000/Tape
SC-70/SOT-323
L2083QWT1G
SC-70
OT-323
REF 0425
L2SC4083QWT1G
marking 4Q
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TG2205F
Abstract: No abstract text available
Text: TG2205F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2205F RF SPDT Switch Application: PHS Features Low insertion loss: LOSS = 0.5dB (typ.) Hight isolation: ISL = 25dB (typ.) Control voltage: 0 V/3 V Pin Assignment (top view) Marking Weight: 0.014 g (typ.)
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TG2205F
000707EBC2
TG2205F
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Untitled
Abstract: No abstract text available
Text: TG2205F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2205F RF SPDT Switch Application: PHS Features Low insertion loss: LOSS = 0.5dB (typ.) Hight isolation: ISL = 25dB (typ.) Control voltage: 0 V/3 V Pin Assignment (top view) Marking Weight: 0.014 g (typ.)
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TG2205F
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TG2205F
Abstract: RF SPDT
Text: TG2205F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2205F RF SPDT Switch Application: PHS Features l Low insertion loss: LOSS = 0.5dB (typ.) l Hight isolation: ISL = 25dB (typ.) l Control voltage: 0 V/3 V Pin Assignment (top view) Marking Weight: 0.014 g (typ.)
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TG2205F
TG2205F
RF SPDT
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FM25L256
Abstract: 0422
Text: Errata for FM25L256 1850 Ramtron Drive Colorado Springs, CO 80921 719-481-7000 FAX: 719-488-9095 Errata Number 002 rev. AC, Date Code 0422 Date August 2, 2004 Product Marking FM25L256 (all package types) Initial testing has identified some problems with FM25L256 Rev AC samples.
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FM25L256
FM25L256
150ns
0422
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FM25L256
Abstract: marking AF
Text: Errata for FM25L256 1850 Ramtron Drive Colorado Springs, CO 80921 719-481-7000 FAX: 719-488-9095 Errata Number 001 rev. AF, Date Code 0431 Date August 24, 2004 Product Marking FM25L256 (all package types) Initial testing has identified a problem with FM25L256 Rev AF samples.
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FM25L256
FM25L256
25MHz
23MHz
marking AF
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transistor k74
Abstract: transistor SMD k74 smd TRANSISTOR code marking 7k transistor k74 smd lg dd SMD TRANSISTOR MARKING NK TRANSISTOR SMD MARKING CODE 8D N7 2C SMD Transistor transistor SMD MARKING CODE 772 smd transistor 7k
Text: IG N TSA1201 12-BIT, 50MSPS, 150mW A/D CONVERTER P 40mW @5Msps, 150mW @ 50Msps P 2.5V supply voltage with 2.5V/3.3V compatiP P P P Temperature Range D Package Conditioning Marking TSA1201IF -40 C to +85 C TQFP48 Tray SA1201I TSA1201IFT -40 C to +85 C TQFP48
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12-BIT,
50MSPS,
150mW
150mW
50Msps
15MHz
TSA0801,
transistor k74
transistor SMD k74
smd TRANSISTOR code marking 7k
transistor k74 smd
lg dd
SMD TRANSISTOR MARKING NK
TRANSISTOR SMD MARKING CODE 8D
N7 2C SMD Transistor
transistor SMD MARKING CODE 772
smd transistor 7k
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FM25L256
Abstract: FM25L256 errata
Text: Errata for FM25L256 1850 Ramtron Drive Colorado Springs, CO 80921 719-481-7000 FAX: 719-488-9095 Errata Number 005 rev. AB, Date Codes 0410 thru 0430, excluding 0422 Date August 2, 2004 Product Marking FM25L256 (all package types) Initial testing has identified some problems with FM25L256 samples.
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FM25L256
FM25L256
150ns
FM25L256 errata
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FM31256
Abstract: FM3164 FM3104 FM3116 FM31x FM3164/FM31256
Text: Errata for FM31x 1850 Ramtron Drive Colorado Springs, CO 80921 719-481-7000 FAX: 719-488-9095 Errata Number 001 rev. AB, Date Code 0337 Date Oct. 2, 2003 Product Marking FM3104, FM3116, FM3164, FM31256 Initial testing has identified a few problems with the FM31x family of devices.
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FM31x
FM3104,
FM3116,
FM3164,
FM31256
FM31x
leve00b,
FM31256
FM3164
FM3104
FM3116
FM3164/FM31256
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marking BSs sot23 siemens n-channel
Abstract: VN2110N3 marking BSs sot23 siemens
Text: U ,1 VN2106 VN2110 r* N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R dS ON BVdgs (max) 60V 100V Order Number / Package 4Q 4Q TO-92 20 Terminal Ceramic LCC Diet TO-236AB* Product marking for SOT-23: VN2106N3 VN2106NF VN2106ND
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VN2106
VN2110
VN2106N3
VN2110N3
VN2106NF
VN2110NF
VN2106ND
VN2110ND
O-236AB*
VN2110K1
marking BSs sot23 siemens n-channel
VN2110N3
marking BSs sot23 siemens
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marking BSs sot23 siemens n-channel
Abstract: 4q diode sot23 diode marking code MU sot23 paz marking BSs sot23 siemens
Text: VN2106 VN2110 Gà Supertax inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss / ^DS<ON b v dgs max) TO-92 20 Terminal Ceramic LCC Diet TO-236AB* Product marking for SOT-23: 60V 4Q VN2106N3 VN2106NF VN2106ND
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VN2106
VN2110
VN2106N3
VN2110N3
VN2106NF
VN2110NF
VN2106ND
VN2110ND
O-236AB*
VN2110K1
marking BSs sot23 siemens n-channel
4q diode sot23
diode marking code MU
sot23 paz
marking BSs sot23 siemens
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSP 299 SIPM O S Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS th = 2-1 - 4.0 V Type Vbs h ^DS(on) Package Marking BSP 299 500 V 0.4 A 4Q SOT-223 BSP 299 Type BSP 299 Ordering Code Q67000-S225 Tape and Reel Information
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OT-223
Q67000-S225
E6327
0235bQ5
flS3Sb05
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Untitled
Abstract: No abstract text available
Text: r R404442000 t *TITLE: 1 W TECHNICAL DATA 8HEET LTR. E Ighz BNC/m COAXIAL TERMINATION DRAWING PACKAGING Studard 100 Without marking Ur It "W opt 1OR Othor Ceitact General tolerances: +/- 0 5 mm |LEÇÎRIQAL_ÇHARAÇÎERISIIQS FREQUENCY RANGE IMPEDANCE OC RESISTANCE
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R404442000
DM02-07-015
R00NY/8/B0I3
335220F
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TG2200F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2200F 1.9GHz BAND ANTENNA SWITCH PHS DIGITAL CORDLESS TELEPHONE FEATURES • CONTROL VOLTAGE : 0V/3V PIN CONNECTION (TOP V IEW ) VC i R F 1 (RX) MARKING G N D RFcom (A N T ) Type nam e
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TG2200F
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TG2200F
Abstract: No abstract text available
Text: TOSHIBA TG2200F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2200F 1.9GHz BAND ANTENNA SWITCH PHS DIGITAL CORDLESS TELEPHONE FEATURES • CONTROL VOLTAGE : 0V/3V PIN CONNECTION (TOP V IEW ) VC i R F 1 (RX) MARKING G N D RFcom (A N T ) Type nam e
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TG2200F
961001EBC1
600kHz
900kHz
TG2200F
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Untitled
Abstract: No abstract text available
Text: MT4LC4M4B1 L 4 MEG X 4 DRAM MICRON 4 MEG x 4 DRAM DRAM 3.3V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages Plastic SOJ (300 mil) DJ • Refresh Rate Standard 32ms period
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128ms
24/26-Pin
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marking code 1AW
Abstract: tme57 E221SD1CGE h032
Text: Sealed* Snap-Acting Momentary Pushbutton Switches E020 Series •process sealed-withstands soldering and cleaning processes. SWITCHES WITH STANDARD OPTIONS C8K MARKING ON THIS SIDE EPOXY SEAL .030 TYP. 76 3 NC 2 NO “ 1 .1 8 5 TYP. T 4 , ?0) COMM. -^ .2 6 0 k (6,6 0)
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E121SD1CGE
E221SD1CGE
marking code 1AW
tme57
E221SD1CGE
h032
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TBA1205
Abstract: TBA120S 120AS 120S3 signetics 2524
Text: GROUPS TBA 120S is delivered in groups An attenuation of 30 dB requires a resistor from pin 5 to ground as indicated in the table. Group 2 3 4 5 Value 1.9 to 2.22.1 to 2.52.4 to 2.92.8 to 3.3K Groups are identified by marking ie TBA 120S—3 indicates group 3.
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120S--3
400mW
500mW
0-12MHZ
120AS)
50KHz
500H2
TBA1205
TBA120S
120AS
120S3
signetics 2524
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MT1805
Abstract: No abstract text available
Text: M IC R O N 512K DRAM MODULE 512K X X MT18D51236 36 DRAM MODULE 36 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT (Top View OPTIONS 72-Pin SIMM (T-12) MT18D51236M/G MARKING • T im ing 60ns access 70ns access 80ns access P ackages L ead less 7 2 -p in SIM M
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MT18D51236
72-pin
512-cycle
MT18D51236M/G
MT18051236
MT1805
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A1E transistor
Abstract: No abstract text available
Text: B S 107 Infineon tcehnologi*» SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 •^GS th = 0.8.2.0V Pin 1 VPT05548 Pin 2 S Pin 3 G Type Vbs fe BDS(on) Package Marking BS 107 200 V 0.13 A 26 a tO -92 BS 107 Type BS 107
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Q67000-S078
E6288
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
A1E transistor
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DZ23C9V1
Abstract: DZ23C27
Text: DUAL ZENER DIODES COMMON CATHODE, 300mW DZ23 SERIES CASE TYPE: T0-23BAB (SOT-23) % Dynamic Resistance Zener Vottage<1> at lz = 5mA Type Marking at Iz -S m A f = 1 kHz VzV rz) Q at lz = 1 mA 1= 1 kHz rz] Q Tamp, Eoaff. of Zener Voltage at lz » 5 mA « V Z H I—4/K
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300mW)
T0-23BAB
OT-23)
DZ23-C2V7
OZ23-C3
DZ23-C3V3
DZ23-C3V6
DZ23-C3V9
DZ23-C4V3
DZ23-C4V7
DZ23C9V1
DZ23C27
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pbt wire
Abstract: PCS-E honda
Text: 1 R fi ^ 1Q-5 > 5.7 P 0 S .# n /2 + 1 2.54 4-R1 P0S.#1 4- < CD / Q O MARKING CP/N) / i i À FOR DISCRETE WIRE P 0 S .$ ( n / 2 ) 2 —M2.5 LAST POS. PART NO. NOTE 1.CONTACT PLATING GOLD(0.2 Mm) ON MATING AREA AND TERMINATION AREA ALL OVER NICKEL. 2. PART NO.
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30AWG
27x24
PCS-E68PM
PCS-E50PM
PCS-E36PM
PCS-E28PM
pbt wire
PCS-E honda
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