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    MARKING 3DS Search Results

    MARKING 3DS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING 3DS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING 68W SOT-23

    Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
    Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06


    Original     		PDF 25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23

    transistor Bc 540

    Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W


    Original     		PDF 0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89

    HALL Sensor TO92UA

    Abstract: 525k hall sensor 525k
    Text: MICRONAS Edition Aug. 30, 2000 6251-465-3DS HAL525, HAL535 Hall Effect Sensor IC MICRONAS HAL525, HAL535 Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range


    Original     		PDF 6251-465-3DS HAL525, HAL535 HAL525 HALL Sensor TO92UA 525k hall sensor 525k

    SMD Hall sensors code C

    Abstract: 525E 4 Pin SMD Hall sensors 4 lead SMD Hall sensors SMD Hall C smd hall sensor SMD Hall sensors SMD Hall sensors code TRANSISTOR SMD MARKING CODE 42 HAL525
    Text: MICRONAS Edition Aug. 30, 2000 6251-465-3DS HAL525, HAL535 Hall Effect Sensor IC MICRONAS HAL525, HAL535 Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range


    Original     		PDF 6251-465-3DS HAL525, HAL535 HAL525 OT-89A SPGS0022-5-A3/2E SMD Hall sensors code C 525E 4 Pin SMD Hall sensors 4 lead SMD Hall sensors SMD Hall C smd hall sensor SMD Hall sensors SMD Hall sensors code TRANSISTOR SMD MARKING CODE 42

    Marking 3ds sot

    Abstract: Q62702-C2532 VPS05604
    Text: BC 856S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type Marking Ordering Code


    Original     		PDF VPS05604 Q62702-C2532 OT-363 EHP00382 EHP00379 Marking 3ds sot Q62702-C2532 VPS05604

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE SRAM 512Kx8-SOP 3DSR4M08CS1271 Static Ram MODULE 4 Mbit SRAM organized as 512Kx8 Pin Assignment Top View SOP 44 (Pitch : 0.80 mm) Features - Fast Access Time : 12, 15 or 20ns. - Organized as 512K x 8-bit - Single +5  0.5V power supply - TTL Compatible Input and Outputs.


    Original     		PDF 512Kx8-SOP 3DSR4M08CS1271 512Kx8 3DSR4M08CS1271 MMXX00000000XXX MMSR08510801SCC 3DFP-0271-REV

    3DFP

    Abstract: No abstract text available
    Text: MEMORY MODULE SRAM 512Kx8-SOP 3DSR4M08CS1271 Static Ram MODULE 4 Mbit SRAM organized as 512Kx8 Pin Assignment Top View SOP 44 (Pitch : 0.80 mm) Features - Fast Access Time : 12, 15 or 20ns. - Organized as 512K x 8-bit - Single +5 ± 0.5V power supply - TTL Compatible Input and Outputs.


    Original     		PDF 512Kx8-SOP 3DSR4M08CS1271 512Kx8 3DSR4M08CS1271 MMXX00000000XXX MMSR08510801SCC 3DFP-0271-REV 3DFP

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE SRAM 512Kx40-SOP Static Ram MODULE 3DSR20M40VS6507 20 Mbit SRAM organized as 512Kx40, based on 256Kx16 Pin Assignment Top View SOP 84 (Pitch : 0.508 mm) Features - Fast Access Time : 12ns. - Power Supply 3.3V - Radiation Characteristics: Total Dose: 100Krad(Si)


    Original     		PDF 512Kx40-SOP 3DSR20M40VS6507 512Kx40, 256Kx16 100Krad 110MeV 100nF MMXX00000000XXX 3DFP-0507-REV

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE SRAM 512Kx40-SOP Static Ram MODULE 3DSR20M40VS6507 20 Mbit SRAM organized as 512Kx40, based on 256Kx16 Pin Assignment Top View SOP 84 (Pitch : 0.508 mm) Features - Fast Access Time : 12ns. - Power Supply 3.3V - Radiation Characteristics: Total Dose: 100Krad(Si)


    Original     		PDF 512Kx40-SOP 3DSR20M40VS6507 512Kx40, 256Kx16 100Krad 110MeV 100nF MMXX00000000XXX 3DFP-0507-REV

    TO92UT-1

    Abstract: 3DS 05 HAL810 HAL810UT-K hall device 810 TO92UT 810a marking code transistor
    Text: DATA SHEET MICRONAS Edition June 24, 2004 6251-536-3DS HAL810 Programmable Linear Hall Effect Sensor MICRONAS HAL 810 DATA SHEET Contents Page Section Title 3 3 3 4 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. 1.7. Introduction Major Applications Features


    Original     		PDF 6251-536-3DS HAL810 19vious TO92UT-1 3DS 05 HAL810 HAL810UT-K hall device 810 TO92UT 810a marking code transistor

    sensor 815a

    Abstract: Hall effect 815a HAL815UT-K HAL805 HAL810 HAL815 Hall Effect Current Measurements TO92UT-1 Micronas HAL805 hall sensors for magnetic measurements
    Text: Hardware Documentation Data Sheet HAL 815 Programmable Linear Hall-Effect Sensor Edition Feb. 7, 2006 6251-537-3DS HAL 815 DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software


    Original     		PDF 6251-537-3DS 6251-537-1DS. 6251-537-2DS. O92UT-1 O92UT-2 O92UT-1/-2 6251-537-3DS. D-79108 D-79008 sensor 815a Hall effect 815a HAL815UT-K HAL805 HAL810 HAL815 Hall Effect Current Measurements TO92UT-1 Micronas HAL805 hall sensors for magnetic measurements

    805K

    Abstract: transistor 805A HAL805UT-K 90MT
    Text: Hardware Documentation Data Sheet HAL 805 Programmable Linear Hall-Effect Sensor Edition Feb. 14, 2006 6251-513-3DS HAL 805 DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software


    Original     		PDF 6251-513-3DS 6251-513-1DS. 6251-513-2ds. O92UT-1 O92UT-2 O92UT-1/-2 6251-513-3DS. D-79108 D-79008 805K transistor 805A HAL805UT-K 90MT

    3d plus

    Abstract: CQFJ 84 A12 marking airborn CQFJ 3DSD1280-323H 3D marking
    Text: PRELIMINARY 1.28 Gbit SDRAM ELECTRONICS 3DSD1280-323H 1.28 GBit Synchronous DRAM - Hermetic package Features General Description Organized as 40M x 32-bit. Single +3.3V ±0.3V power supply Two stacks of ten 64 MBit SDRAM mounted on ceramic hermetic package


    Original     		PDF 3DSD1280-323H 32-bit. 100nF MIL-STD-883D /883D-S 3DSD1280-323H/PROTO 3DSD1280-323H/883D-S F-78532 3DFP-0008 3d plus CQFJ 84 A12 marking airborn CQFJ 3DSD1280-323H 3D marking

    506A Magnetic Sensors

    Abstract: hall 508k Hall Effect Sensor Family 503K 3 PIN hall effect 506k 509K hall effect IC hall effect position sensor 503 HAL502 HAL503 HAL505 HAL506
    Text: DATA SHEET MICRONAS Edition Oct. 7, 2002 6251-485-3DS HAL501.506, 508, 509, HAL516.519, 523 Hall Effect Sensor Family MICRONAS HAL5xx DATA SHEET Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. Introduction Features Family Overview


    Original     		PDF 6251-485-3DS HAL501. HAL516. 506A Magnetic Sensors hall 508k Hall Effect Sensor Family 503K 3 PIN hall effect 506k 509K hall effect IC hall effect position sensor 503 HAL502 HAL503 HAL505 HAL506

    RFC-896

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. :KLWH 3DSHU %ULQJLQJ &RPSUHKHQVLYH 4XDOLW\ RI 6HUYLFH &DSDELOLWLHV WR 1H[W*HQHUDWLRQ 1HWZRUNV Freescale Semiconductor, Inc. By: Dr. Syed Ijlal Ali Shah, TM Product Line Manager for Motorola’s C-Port Family of Network Processors


    Original     		PDF

    3D Plus

    Abstract: PQFP64 3D-PLUS F7853 3D Plus sram 3DS16-325 3D plus memory 16 f78532
    Text: PRELIMINARY 16Mbit CMOS SRAM ELECTRONICS 3DS16-325 512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating FEATURES DESCRIPTION Fast Access Time : 15 or 20ns Single 5.0 ± 0.5V Power Supply Power Dissipation - Standby 80mA - Operating 540mA Max. TTL Compatible Inputs and Outputs


    Original     		PDF 16Mbit 3DS16-325 540mA 3DS16-325 PQFP64 3DS16-325S F-78532 3DFP-0012 3D Plus PQFP64 3D-PLUS F7853 3D Plus sram 3D plus memory 16 f78532

    transistor marking 6c1

    Abstract: transistor marking E2 3Ds SOT363
    Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see


    Original     		PDF BC856S/U BC857S BC856S BC857S: EHA07175 BC856U transistor marking 6c1 transistor marking E2 3Ds SOT363

    sot363 marking DATE code

    Abstract: marking AF BC856S BC856U BC857S BC857U SC74 marking B1 sot363 marking 3cs 3Ds SOT363
    Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see


    Original     		PDF BC856S/U BC857S BC856S BC857S: BC856S/U EHA07175 BC856S OT363 BC856U sot363 marking DATE code marking AF BC856U BC857S BC857U SC74 marking B1 sot363 marking 3cs 3Ds SOT363

    transistor marking 6c1

    Abstract: No abstract text available
    Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see


    Original     		PDF BC856S/U BC857S BC856S BC857S: EHA07175 BC856U transistor marking 6c1

    Untitled

    Abstract: No abstract text available
    Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see


    Original     		PDF BC856S/U BC857S BC856S BC857S: BC856S/U EHA07175 BC856S OT363 BC856U

    Untitled

    Abstract: No abstract text available
    Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see


    Original     		PDF BC856S/U BC857S BC856S BC857S: EHA07175 BC856U

    transistor BC 339

    Abstract: TRANSISTOR BC 629 339 marking code transistor PG-SOT363-6-1 MA000849564
    Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see


    Original     		PDF BC856S/U BC857S BC856S BC857S: EHA07175 BC856U transistor BC 339 TRANSISTOR BC 629 339 marking code transistor PG-SOT363-6-1 MA000849564

    3DSD3G48VQ6486

    Abstract: No abstract text available
    Text: MEMORY MODULE SDRam 64Mx48-QFP Synchronous Dynamic Ram MODULE 3DSD3G48VQ6486 3Gbit SDRam organized as 64Mx48, based on 32Mx16 Pin Assignment Top View QFP 114-(Pitch : 0.635mm) - Organized as 64Mx48-bit. - Single +3.3V power supply. 27 28 29 30 31 32 33 34


    OCR Scan     		PDF 64Mx48-QFP 3DSD3G48VQ6486 64Mx48, 32Mx16 635mm) 64Mx48-bit. 133MHz/CL3 3DFP-0486-REV 3DSD3G48VQ6486

    3DSD1G16VS2494

    Abstract: No abstract text available
    Text: -pJusTj ^ MEMORY MODULE SDRam 64Mx 16-SOP a HEICO company Synchronous Dynamic Ram MODULE 3DSD1G16VS2494 1Gbit SDRam organized as 64Mx16, based on 32Mx16 Pin Assignment Top View SOP 58 - (Pitch : 0.80 mm) Features - Organized as 64Mx16-bit. - Single +3.3V power supply.


    OCR Scan     		PDF 16-SOP 3DSD1G16VS2494 64Mx16, 32Mx16 64Mx16-bit. Tem494 sales03d-Dlus 3DFP-0494-REV 3DSD1G16VS2494