Untitled
Abstract: No abstract text available
Text: Product specification DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMG3415U
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Untitled
Abstract: No abstract text available
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS R DS(on) max -20V 42.5mΩ @ V GS = -4.5V 71mΩ @ V GS = -1.8V ID T A = +25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (R DS(ON) ) and yet maintain superior switching
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DMG3415U
AEC-Q101
DS31735
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marking 34P sot 23
Abstract: DMG3415U "marking code" 34P sot23 dmg3415u-7 J-STD-020D marking code 34P
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 42.5mΩ @ VGS = -4.5V • 53mΩ @ VGS = -2.5V • 71mΩ @ VGS = -1.8V
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DMG3415U
AEC-Q101
OT-23
J-STD-020D
DS31735
marking 34P sot 23
DMG3415U
"marking code" 34P sot23
dmg3415u-7
J-STD-020D
marking code 34P
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marking 34P sot23
Abstract: No abstract text available
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMG3415U
AEC-Q101
DS31735
marking 34P sot23
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PDF
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Untitled
Abstract: No abstract text available
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMG3415U
AEC-Q101
DS31735
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PDF
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DMG3415U-13
Abstract: "marking code" 34P sot23 marking code YW DIODE marking 34P sot23
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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DMG3415U
AEC-Q101
DS31735
DMG3415U-13
"marking code" 34P sot23
marking code YW DIODE
marking 34P sot23
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PDF
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Untitled
Abstract: No abstract text available
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMG3415U
DS31735
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DMG3415U
Abstract: marking 34P sot 23 dmg3415u-7 YM 294 J-STD-020D
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 39mΩ @ VGS = -4.5V • 52mΩ @ VGS = -2.5V • 65mΩ @ VGS = -1.8V
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DMG3415U
AEC-Q101
OT-23
J-STD-020D
DS31735
DMG3415U
marking 34P sot 23
dmg3415u-7
YM 294
J-STD-020D
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PDF
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"marking code" 34P sot23
Abstract: marking 34P sot23
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V Features • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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DMG3415U
AEC-Q101
DS31735
"marking code" 34P sot23
marking 34P sot23
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PDF
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DMG3415UQ-7
Abstract: DMG3415U-7 DS31735 marking 34P sot23
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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DMG3415U
AEC-Q101
DS31735
621-DMG3415U-7
DMG3415U-7
DMG3415UQ-7
DMG3415U-7
marking 34P sot23
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Untitled
Abstract: No abstract text available
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V ID TA = +25°C -4.0A -2.0A Description • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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DMG3415U
AEC-Q101
DS31735
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marking 34P sot 23
Abstract: marking 34P sot23
Text: UNISONIC TECHNOLOGIES CO., LTD UT3413 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3413 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and
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UT3413
UT3413
UT3413L-AE2-R
UT3413G-AE2-R
UT3413L-AE3-R
UT3413G-AE3-R
OT-23-3
OT-23
QW-R502-159
marking 34P sot 23
marking 34P sot23
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marking 34P sot 23
Abstract: marking 34P marking 34P sot23
Text: UNISONIC TECHNOLOGIES CO., LTD UT3413 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3413 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and
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UT3413
UT3413
UT3413L-AE3-R
UT3413G-AE3-R
OT-23
QW-R502-159
marking 34P sot 23
marking 34P
marking 34P sot23
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marking W26 sot23
Abstract: SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89
Text: PACKAGE OUTLINES Linear ICs SURFACE MOUNT PACKAGES SOT23-3 SOT-23 0.7 1.0 3 e1 2.4 Marking e 0.95 e 0.95 e1 1.90 Recommended Mounting Pad + 0.1 0.4 0.95 2 1.6 0.1 1.1 0 - 0.1 1.4 max (0.3) 2.9 max. e 15 0.95 (0.4) 0.15 e + 0.1 1 C1 0.1 + 0.3 2.8 Dimensions are shown in millimeters
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OT23-3
OT-23)
OT23-5
OT-25)
TK73249M
OT23L-8
TK73250M
TK73255M
marking W26 sot23
SOT23-5 marking 016
sot23 w32
Marking c9 SOT23-5
W32 MARKING
SOT23-6 MARKING b4
sot89-5 PAD
Marking P35 sot89
SOT23-5 MARKING g5
Marking code 33 29 SOT89
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GFB7400D
Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest
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transistor cross reference
Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC
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