Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAT54/A/C/S SCHOTTKY DIODES SOT-23 FEATURES Power Dissipation PD : 200 mW(Tamb=25℃) BAT54 MARKING: KL1 BAT54A MARKING: KL2 BAT54C MARKING: KL3 BAT54S MARKING: KL4 Maximum Ratings @TA=25
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OT-23
BAT54/A/C/S
OT-23
BAT54
BAT54A
BAT54C
BAT54S
100mA
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kl4 diode
Abstract: kl3 diode kl2 diode kl2 marking kl4 transistor BAT54C KL3 DC marking 08 sot-23 BAT54 BAT54A BAT54C
Text: BAT54 SCHOTTKY DIODES SOT-23 PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Diodes FEATURES Extremely Fast Switching Speed BAT54 MARKING: KL1 BAT54A MARKING: KL2 BAT54C MARKING: KL3 BAT54S MARKING: KL4 Pb-free; RoHS-compliant MAXIMUM RATINGS @TA=25 oC Parameter
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BAT54
OT-23
OT-23
BAT54
BAT54A
BAT54C
BAT54S
100Aeliness
kl4 diode
kl3 diode
kl2 diode
kl2 marking
kl4 transistor
BAT54C KL3 DC
marking 08 sot-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAT54/A/C/S SCHOTTKY BARRIER DIODE SOT-23 FEATURES z Extremely Fast Switching Speed BAT54 MARKING: KL1 BAT54A MARKING: KL2 BAT54C MARKING: KL3 BAT54S MARKING: KL4 Maximum Ratings @Ta=25℃
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OT-23
BAT54/A/C/S
OT-23
BAT54
BAT54A
BAT54C
BAT54S
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kl4 diode
Abstract: BAT54S kl1 BAT54A kl3 diode bat54 KL4 SOT-23 bat54a sot-23 BAT54 kl3 marking KL4 kl1 diode
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAT54/A/C/S SCHOTTKY DIODES SOT-23 FEATURES z Extremely Fast Switching Speed BAT54 MARKING: KL1 BAT54A MARKING: KL2 BAT54C MARKING: KL3 BAT54S MARKING: KL4 Maximum Ratings @TA=25℃
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OT-23
BAT54/A/C/S
OT-23
BAT54
BAT54A
BAT54C
BAT54S
100mA
kl4 diode
BAT54S kl1
kl3 diode
KL4 SOT-23
bat54a sot-23
BAT54 kl3
marking KL4
kl1 diode
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40/-04/-05/-06 SCHOTTKY DIODE SOT-23 FEATURES z Low forward voltage z Fast switching BAS40 MARKING:43h BAS40-04 MARKING: 44 BAS40-05 MARKING: 45 BAS40-06 MARKING: 46 Maximum Ratings @TA=25
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OT-23
BAS40/-04/-05/-06
OT-23
BAS40
BAS40-04
BAS40-05
BAS40-06
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Diodes BAS40/-04/-05/-06 SCHOTTKY DIODE SOT-23 FEATURES z Low forward voltage z Fast switching BAS40 MARKING:43h BAS40-04 MARKING: 44 BAS40-05 MARKING: 45 BAS40-06 MARKING: 46 Maximum Ratings @TA=25 Parameter Symbol Peak Repetitive Peak reverse voltage
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OT-23
BAS40/-04/-05/-06
OT-23
BAS40
BAS40-04
BAS40-05
BAS40-06
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD914LT1 SOT-23 SWITCHING DIODES FEATURES Power Dissipation PD : 225 mW(Tamb=25℃) MARKING: 5D Maximum Ratings @TA=25 Parameter Symbol Peak Repetitive Peak reverse voltage
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OT-23
MMBD914LT1
OT-23
150mA
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transistor y21 sot-23
Abstract: No abstract text available
Text: M8550 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y21 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25
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M8550
OT-23
OT-23
-100A
-100A,
-100mA
-800mA
-800mA,
-80mA
transistor y21 sot-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8550 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y21 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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OT-23
M8550
-100mA
-800mA
-800mA,
-80mA
-20mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2369 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : M1J 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
MMBT2369
100mA
MMBT2369
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m8050
Abstract: y11 transistor M8050-TRANSISTOR transistor y11 sot-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8050 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
M8050
100mA
800mA
800mA,
30MHz
m8050
y11 transistor
M8050-TRANSISTOR
transistor y11 sot-23
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transistor y21 sot-23
Abstract: M8550
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8550 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y21 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
M8550
-100A,
-100mA
-800mA
-800mA,
-80mA
transistor y21 sot-23
M8550
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M8050 SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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OT-23
M8050
OT-23
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sod-23
Abstract: diode sod23 SOD 23 marking a7 SOD23 marking A4 marking A1 diode marking a4 MARKING A4 transistor SILICON SWITCHING DIODE
Text: BAV70 SWITCHING DIODE PRODUCT SUMMARY SOT-23 SOD-23 Plastic-Encapsulate Diodes FEATURES Fast Switching Speed For General Purpose Switching Applications High Conductance BAW56 Marking: A1 BAV70 Marking: A4 BAV99 Marking: A7 Pb-free; RoHS-compliant MAXIMUM RATINGS @TA=25°C
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BAV70
OT-23
OD-23
BAW56
BAV70
BAV99
sod-23
diode sod23
SOD 23
marking a7
SOD23
marking A4
marking A1
diode marking a4
MARKING A4 transistor
SILICON SWITCHING DIODE
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40 SERIES SOT—23 SCHOTTKY DIODE FEATURES BAS40 Marking:43 BAS40-04 Marking:44 ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage
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OT-23
BAS40
BAS40-04
BAS40-05
BAS40-06
037TPY
950TPY
550REF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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OT-23
C1815
C1815
100uA,
100mA,
30MHz
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C1815HF
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
C1815
C1815
100uA,
30MHz
C1815HF
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transistor C1815
Abstract: c1815 ic c1815 C1815 equivalent c1815 SOT-23 NPN C1815 c1815 transistor C1815HF C1815 data c1815 marking transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
C1815
C1815
M100uA,
100mA,
30MHz
transistor C1815
ic c1815
C1815 equivalent
c1815 SOT-23
NPN C1815
c1815 transistor
C1815HF
C1815 data
c1815 marking transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
C1815
C1815
100uA,
100mA,
30MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBT4401
OT-23
MMBT4401
-55to
150mA
150mA,
100MHz
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y11 transistor
Abstract: transistor y11 sot-23 .y11 transistor
Text: M8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y11 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
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M8050
OT-23
OT-23
100mA
800mA
800mA,
30MHz
y11 transistor
transistor y11 sot-23
.y11 transistor
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transistor c1815
Abstract: c1815 c1815 SOT-23 C1815HF C1815 NPN Transistor c1815 marking transistor C1815H c1815 sot23 npn TRANSISTOR c1815 "transistor" c1815
Text: C1815 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING : C1815=HF Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
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C1815
OT-23
OT-23
C1815
100uA,
100mA,
30MHz
transistor c1815
c1815 SOT-23
C1815HF
C1815 NPN Transistor
c1815 marking transistor
C1815H
c1815 sot23
npn TRANSISTOR c1815
"transistor" c1815
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MMBT4403
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :MMBT4403=2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
OT-23
MMBT4403
-100A
-100A,
-150mA
-150mA,
-15mA
150mA,
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MMBT4401
Abstract: marking 2X SOT23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
MMBT4401
OT-23
MMBT4401
-55to
150mA
150mA,
100MHz
marking 2X SOT23
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