Untitled
Abstract: No abstract text available
Text: Organic Conductive Polymer Capacitors ORE Features ‧ 105℃, 5,000 hours assured ‧ Ultra low ESR with large permissible ripple current ‧ RoHS Compliance Marking color: Blue SPECIFICATIONS Items Category Temperature Range Capacitance Tolerance Performance
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120Hz,
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog HC-B 16-ESTQ-2,5-OLOGO Order No.: 1605642 Male insert, 16-pos., QUICKON connection, marking 1-x Product notes WEEE/RoHS-compliant since: 08/01/2005
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16-ESTQ-2
16-pos.
16-ANDOCK
24-ADP-B
16-GY
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24EB60
Abstract: transistor marking code wm9 15j100 RETMA RAILS 15EB100 B24G350 Acopian Power Supplies A050MX120 12EB120 22J100
Text: Increasing numbers of Acopian Power Supplies call for current information are now available with CE marking upon request. ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE (1 of 2) Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC
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Untitled
Abstract: No abstract text available
Text: VS-16EDH02HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 16 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery K • 175 °C maximum operating junction temperature • Specified for output and snubber operation
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VS-16EDH02HM3
J-STD-020,
O-263AC
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog EMG 90-DIO 16E/LP Order No.: 2954808 Lamp test module, 2 diodes with common cathode: with 8 pairs, for individual wiring Product notes WEEE/RoHS-compliant since:
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90-DIO
16E/LP
IF-2009)
16E/LP
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90-DIO
Abstract: No abstract text available
Text: Extract from the online catalog EMG 90-DIO 16E/LP Order No.: 2954808 Lamp test module, 2 diodes with common cathode: with 8 pairs, for individual wiring Product notes WEEE/RoHS-compliant since:
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90-DIO
16E/LP
IF-2009)
16E/LP
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Untitled
Abstract: No abstract text available
Text: VS-16EDU06HM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 16 A FRED Pt FEATURES • Ultrafast recovery time, reduced Qrr, and soft recovery K • 175 °C maximum operating junction temperature • For PFC CRM, snubber operation • Low forward voltage drop
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Original
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VS-16EDU06HM3
J-STD-020,
O-263AC
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-16EDU06-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 16 A FRED Pt FEATURES • Ultrafast recovery time, reduced Qrr, and soft recovery K • 175 °C maximum operating junction temperature • For PFC CRM, snubber operation • Low forward voltage drop
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Original
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VS-16EDU06-M3
J-STD-020,
O-263AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-16EDH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 16 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery K • 175 °C maximum operating junction temperature • Specified for output and snubber operation
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Original
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VS-16EDH02-M3
J-STD-020,
O-263AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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si8406
Abstract: No abstract text available
Text: Si8406DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.033 at VGS = 4.5 V 16e 0.037 at VGS = 2.5 V 16e 0.042 at VGS = 1.8 V 15 Qg (Typ.) 7.5 nC MICRO FOOT Bump Side View S • Load Switch • Battery Management
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Si8406DB
Si8406DB-T2-E1
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si8406
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8406DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.033 at VGS = 4.5 V 16e 0.037 at VGS = 2.5 V 16e 0.042 at VGS = 1.8 V 15 Qg (Typ.) 7.5 nC MICRO FOOT Bump Side View S • Load Switch • Battery Management
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Si8406DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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SI7812DN
Abstract: No abstract text available
Text: Si7812DN New Product Vishay Siliconix N-Channel 75-V D-S MOSFET PRODUCT SUMMARY VDS (V) 75 FEATURES rDS(on) (W) ID (A) 0.037 @ VGS = 10 V 16e 0.046 @ VGS = 4.5 V 16e Qg (Typ) 8 nC D TrenchFETr Power MOSFET D Low Thermal Resistance PowerPAKr Package with Small Size and Low 1.07mm
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Si7812DN
Si7812DN-T1--E3
S-51129--Rev.
13-Jun-05
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PDF
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SI7812DN
Abstract: No abstract text available
Text: Si7812DN New Product Vishay Siliconix N-Channel 75-V D-S MOSFET PRODUCT SUMMARY VDS (V) 75 FEATURES rDS(on) (W) ID (A) 0.037 @ VGS = 10 V 16e 0.046 @ VGS = 4.5 V 16e Qg (Typ) 8 nC D TrenchFETr Power MOSFET D Low Thermal Resistance PowerPAKr Package with Small Size and Low 1.07mm
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Si7812DN
Si7812DN-T1--E3
S-50518--Rev.
21-Mar-05
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PDF
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Si7601DN
Abstract: No abstract text available
Text: New Product Si7601DN Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES rDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ) 16.2 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®
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Si7601DN
Si7601DN-T1-E3
08-Apr-05
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PDF
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SI7812DN
Abstract: No abstract text available
Text: Si7812DN Vishay Siliconix New Product N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 rDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ) 8 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm
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Si7812DN
Si7812DN-T1-E3
18-Jul-08
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PDF
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Si7812DN-T1-GE3
Abstract: Si7812 Si7812DN Si7812DN-T1-E3
Text: Si7812DN Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ.) 8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7812DN
Si7812DN-T1-E3
Si7812DN-T1-GE3
18-Jul-08
Si7812
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PDF
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SI7812DN
Abstract: No abstract text available
Text: Si7812DN New Product Vishay Siliconix N-Channel 75-V D-S MOSFET PRODUCT SUMMARY VDS (V) 75 FEATURES rDS(on) (W) ID (A) 0.037 @ VGS = 10 V 16e 0.046 @ VGS = 4.5 V 16e Qg (Typ) 8 nC D TrenchFETr Power MOSFET D Low Thermal Resistance PowerPAKr Package with Small Size and Low 1.07mm
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Si7812DN
Si7812DN-T1--E3
08-Apr-05
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PDF
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Si7812DN
Abstract: 16e marking Si7812DN-T1-E3 si7812 marking 16e
Text: Si7812DN Vishay Siliconix New Product N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 rDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ) 8 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm
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Si7812DN
Si7812DN-T1-E3
08-Apr-05
16e marking
si7812
marking 16e
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Si7601DN
Abstract: si7601
Text: New Product Si7601DN Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®
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Si7601DN
Si7601DN-T1-E3
Si7601DN-T1-GE3
18-Jul-08
si7601
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PDF
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Si7601DN
Abstract: si7601
Text: New Product Si7601DN Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®
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Si7601DN
Si7601DN-T1-E3
Si7601DN-T1-GE3
11-Mar-11
si7601
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PDF
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Si7812DN
Abstract: Si7812DN-T1-GE3 Si7812DN-T1-E3
Text: Si7812DN Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ.) 8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Original
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Si7812DN
Si7812DN-T1-E3
Si7812DN-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si7601DN Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®
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Original
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Si7601DN
Si7601DN-T1-E3
Si7601DN-T1-GE3
11-Mar-11
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PDF
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Si7601DN
Abstract: No abstract text available
Text: New Product Si7601DN Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®
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Si7601DN
Si7601DN-T1-E3
Si7601DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Trak Microwave
Abstract: No abstract text available
Text: .19 MAX n ; - 31j 1 T jn n j I_ :j u H .25 .0 7 h 11 l0UTl .0 5 — I k .2 6 H .16 .0 6 - IN o □ STANDARD □ SPECIAL MATERIAL » BASE : F R -4 » COVER : VECTRA » MARKING : LASER » FINISH : SOLDER TIN DIRECTIONAL COUPLER IRAK MICROWAÆ DIRECTIONAL
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OCR Scan
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CPL/16EF--
Trak Microwave
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