Untitled
Abstract: No abstract text available
Text: SCRH1035R SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS 1 SCRH1035R-1R5 SCRH1035R-2R2 SCRH1035R-3R3 SCRH1035R-4R7 SCRH1035R-5R6
|
Original
|
SCRH1035R
SCRH1035R-1R5
SCRH1035R-2R2
SCRH1035R-3R3
SCRH1035R-4R7
SCRH1035R-5R6
SCRH1035R-6R8
SCRH1035R-100
SCRH1035R-120
SCRH1035R-150
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SCRH1035R SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS 1 SCRH1035R-1R5 SCRH1035R-2R2 SCRH1035R-3R3 SCRH1035R-4R7 SCRH1035R-5R6
|
Original
|
SCRH1035R
SCRH1035R-1R5
SCRH1035R-2R2
SCRH1035R-3R3
SCRH1035R-4R7
SCRH1035R-5R6
SCRH1035R-6R8
SCRH1035R-100
SCRH1035R-120
SCRH1035R-150
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SC414MF SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction – Low EMI 2 Excellent Power Density 3 Engineered to Provide High Efficiency CHARACTERISTICS DC Resistance MAX (2) (1) Saturation(3) Temperature (4) Current Current
|
Original
|
SC414MF
SC414MF-1R0
100KHZ
SC414MF-1R5
SC414MF-2R2
SC414MF-3R3
SC414MF-4R7
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SC414MF SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction – Low EMI 2 Excellent Power Density 3 Engineered to Provide High Efficiency CHARACTERISTICS DC Resistance Ω MAX (2) (1) Saturation(3) Temperature (4) Current Current
|
Original
|
SC414MF
SC414MF-1R0
100KHZ
SC414MF-1R5
SC414MF-2R2
SC414MF-3R3
SC414MF-4R7
|
PDF
|
RFMD RF2048
Abstract: No abstract text available
Text: RF2048 GENERAL PURPOSE AMPLIFIER NOT FOR NEW DESIGNS RoHS Compliant & Pb-Free Product Package Style: Micro-X Ceramic Features MARKING - C8 SI GN S DC to 8000MHz Operation Internally matched Input and Output 12dB Small Signal Gain +25dBm Output IP3
|
Original
|
RF2048
RF2048
RF204X
DS070403
RFMD RF2048
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2188 MCH3486 N-Channel Power MOSFET 60V, 2A, 137mΩ Single MCPH3 http://onsemi.com Features • On-resistance RDS on 1=105mΩ(typ.) • Halogen free compliance • 4V drive • Protection Diode in Specifications Absolute Maximum Ratings at Ta = 25°C
|
Original
|
ENA2188
MCH3486
PW10s,
900mm2
A2188-6/6
|
PDF
|
a2188
Abstract: No abstract text available
Text: Ordering number : ENA2188 MCH3486 N-Channel Power MOSFET 60V, 2A, 137m Single MCPH3 ht t p://onse m i.c om Features • On-resistance RDS on 1=105m (typ.) • Halogen free compliance • 4V drive • Protection Diode in Specifications Absolute Maximum Ratings at Ta = 25°C
|
Original
|
ENA2188
MCH3486
900mm2Ã
A2188-6/6
a2188
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1124A CPH3356 P-Channel Power MOSFET http://onsemi.com –20V, –2.5A, 137mΩ, Single CPH3 Features • • • 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
|
Original
|
ENA1124A
CPH3356
PW10s,
900mm2
A1124-7/7
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number : EN8699A VEC2315 P-Channel Power MOSFET http://onsemi.com –60V, –2.5A, 137mΩ, Dual VEC8 Features • • • • • ON-resistance RDS on 1=105mΩ(typ.) 4V drive High-density mounting Protection diode in Halogen free compliance Specifications
|
Original
|
EN8699A
VEC2315
900mm2Ã
|
PDF
|
ssm3j129
Abstract: No abstract text available
Text: SSM3J129TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSV SSM3J129TU ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.5 V drive • Low ON-resistance Ron = 137mΩ (max) (@VGS = -1.5 V) Unit: mm 1.7±0.1
|
Original
|
SSM3J129TU
ssm3j129
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS V SSM3J321T ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.5V drive Low ON-resistance: Ron = 137mΩ (max) (@VGS = -1.5 V) Ron = 88mΩ (max) (@VGS = -1.8 V)
|
Original
|
SSM3J321T
to150
|
PDF
|
SSM3J321T
Abstract: No abstract text available
Text: SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS V SSM3J321T ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.5V drive Low ON-resistance: Ron = 137mΩ (max) (@VGS = -1.5 V) Ron = 88mΩ (max) (@VGS = -1.8 V)
|
Original
|
SSM3J321T
to150
SSM3J321T
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS V SSM3J321T Power Management Switch Applications High-Speed Switching Applications • • 1.5V drive Low ON-resistance: Ron = 137mΩ (max) (@VGS = -1.5 V) Ron = 88mΩ (max) (@VGS = -1.8 V)
|
Original
|
SSM3J321T
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM3J129TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSV SSM3J129TU Power Management Switch Applications High-Speed Switching Applications • 1.5 V drive • Low ON-resistance Ron = 137mΩ (max) (@VGS = -1.5 V) Unit: mm 1.7±0.1 Symbol
|
Original
|
SSM3J129TU
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: SSM3J129TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSV SSM3J129TU ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.5 V drive • Low ON-resistance Ron = 137mΩ (max) (@VGS = -1.5 V) Unit: mm 1.7±0.1
|
Original
|
SSM3J129TU
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS V SSM3J321T ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.5V drive Low ON-resistance: Ron = 137mΩ (max) (@VGS = -1.5 V) Ron = 88mΩ (max) (@VGS = -1.8 V)
|
Original
|
SSM3J321T
to150
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1822A VEC2616 Power MOSFET http://onsemi.com 60V, 3A, 80mΩ, –60V, –2.5A, 137mΩ, Complementary Dual VEC8 Features • • • • • ON-resistance Nch: RDS on 1=62mΩ(typ.), Pch: RDS(on)1=105mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET
|
Original
|
ENA1822A
VEC2616
PW10s,
900mm2
A1822-9/9
|
PDF
|
BN200NW
Abstract: BNJ46F THREAD ROD BNC520 BNDN1000 BN200 BA411S BN400NW BNE15W BN400
Text: Terminal Blocks BN Power Blocks BN Series Key features of the BN series include: • Power blocks BN200 and BN400 up to 350A are available for DIN rail or direct mounting on panel surfaces UL Recognized File No. E78117 CSA Certified File No. LR64803 File No. J9551516
|
Original
|
BN200
BN400)
E78117
LR64803
J9551516
BN200NW#
BN400NW#
BN200NW
BN400NW
75mm2)
BNJ46F
THREAD ROD
BNC520
BNDN1000
BA411S
BNE15W
BN400
|
PDF
|
transistor "micro-x" "marking" 3
Abstract: micro-X ceramic Package hemt micro-X ceramic Package
Text: RF2048 GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers
|
Original
|
RF2048
RF2048
8000MHz.
transistor "micro-x" "marking" 3
micro-X ceramic Package hemt
micro-X ceramic Package
|
PDF
|
transistor "micro-x" "marking" 3
Abstract: micro-X ceramic Package hemt
Text: RF2048 GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers
|
Original
|
RF2048
RF2048
8000MHz.
transistor "micro-x" "marking" 3
micro-X ceramic Package hemt
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments VC VCA820 A8 20 VC A820 SBOS395 – OCTOBER 2007 Wideband, > 40dB Adjust Range, Linear in dB VARIABLE GAIN AMPLIFIER FEATURES 1 • • • • • • • 23 150MHz SMALL-SIGNAL BANDWIDTH 137MHz, 5VPP BANDWIDTH G = +10V/V
|
Original
|
VCA820
SBOS395
150MHz
137MHz,
28MHz
700V/Â
160mA
LMH6502
|
PDF
|
A820
Abstract: LMH6502 VCA810
Text: BurrĆBrown Products from Texas Instruments VC VCA820 A8 20 VC A820 SBOS395 – OCTOBER 2007 Wideband, > 40dB Adjust Range, Linear in dB VARIABLE GAIN AMPLIFIER FEATURES 1 • • • • • • • 23 150MHz SMALL-SIGNAL BANDWIDTH 137MHz, 5VPP BANDWIDTH G = +10V/V
|
Original
|
VCA820
SBOS395
150MHz
137MHz,
28MHz
160mA
LMH6502
VCA820
A820
LMH6502
VCA810
|
PDF
|
capacitor 10mf 16v
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments VC VCA820 A8 20 VC A820 SBOS395 – OCTOBER 2007 Wideband, > 40dB Adjust Range, Linear in dB VARIABLE GAIN AMPLIFIER FEATURES 1 • • • • • • • 23 150MHz SMALL-SIGNAL BANDWIDTH 137MHz, 5VPP BANDWIDTH G = +10V/V
|
Original
|
VCA820
SBOS395
150MHz
137MHz,
28MHz
160mA
VCA820
capacitor 10mf 16v
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments VC VCA820 A8 20 VC A820 SBOS395 – OCTOBER 2007 Wideband, > 40dB Adjust Range, Linear in dB VARIABLE GAIN AMPLIFIER FEATURES 1 • • • • • • • 23 150MHz SMALL-SIGNAL BANDWIDTH 137MHz, 5VPP BANDWIDTH G = +10V/V
|
Original
|
VCA820
SBOS395
150MHz
137MHz,
28MHz
160mA
VCA820
|
PDF
|
