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    MARK WC SOT23 Search Results

    MARK WC SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    MARK WC SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N7002K

    Abstract: E5 marking sot23 6 wc sot23 marking EA SOT23 E2- marking h8 marking sot23 marking JB E5 Marking Marking E5 JA MARKING SOT23
    Text: SEMICONDUCTOR 2N7002K MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. WC 0 1 2. Marking 2 Item Marking Description Device Mark WC 2N7002K * Lot No. 01 Manufacturing date Year/Week Note) * Lot No. marking method * : Lot No. marking method


    Original     		PDF 2N7002K OT-23 2N7002K E5 marking sot23 6 wc sot23 marking EA SOT23 E2- marking h8 marking sot23 marking JB E5 Marking Marking E5 JA MARKING SOT23

    MMBT2222A

    Abstract: PN2222A PZT2222A
    Text: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol


    Original     		PDF MMBT2222A PZT2222A OT-23 OT-223 MMBT2222A PN2222A PZT2222A

    sot23 mark code e2

    Abstract: 8q diode sot23 MARK 8F SOT-23 mark 8m sot-23 5252b 5251B 8C SOT-23 8F sot23 8Y SOT23 FAIRCHILD SOT-23 MARK 30
    Text: Tolerance: B = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Maximum Junction Operating Temperature 3 Value Units -55 to +150 °C + 150 °C mW mW/°C Total Device Dissipation Derate above 25°C 350 2.8 2


    Original     		PDF OT-23 sot23 mark code e2 8q diode sot23 MARK 8F SOT-23 mark 8m sot-23 5252b 5251B 8C SOT-23 8F sot23 8Y SOT23 FAIRCHILD SOT-23 MARK 30

    FAIRCHILD SOT-23 MARK 1a

    Abstract: BC846 SOT23 NPN sot23 mark NF 847C BC846 BC846A BC846B BC847 BC847A fAIRCHILD BC847b
    Text: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.


    Original     		PDF BC847A BC847B BC847C OT-23 BC846A BC846B BC847A BC847B BC846A FAIRCHILD SOT-23 MARK 1a BC846 SOT23 NPN sot23 mark NF 847C BC846 BC847 fAIRCHILD BC847b

    diode 5V1 sot23

    Abstract: SOT23 MARK Y2 SOT23 MARK Y2 Diode SOT23 MARK Y3 mark Y1 SOT-23 Y2 sot23 mark y1 SOT23 body mark 3V6 SOT-23 DIODE BZX 24 7v5, sot-23
    Text: Tolerance: C = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Value Units -55 to +150 °C + 150 °C Total Device Dissipation Derate above 25°C Repetitive Peak Forward Current IFRM 350 1.8 250 mW mW/°C


    Original     		PDF OT-23 diode 5V1 sot23 SOT23 MARK Y2 SOT23 MARK Y2 Diode SOT23 MARK Y3 mark Y1 SOT-23 Y2 sot23 mark y1 SOT23 body mark 3V6 SOT-23 DIODE BZX 24 7v5, sot-23

    5251B

    Abstract: 8C SOT-23 5233B mark 8m sot-23 Zener 5.1V 5228B MMBZ5226B MMBZ5257B SOT-23 Zener Diode Zener diode 81A
    Text: Tolerance: B = 5% Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value 3 Units TSTG Storage Temperature Range -55 to +150 °C TJ Maximum Junction Operating Temperature Total Device Dissipation Derate above 25°C + 150 °C 350


    Original     		PDF OT-23 5251B 8C SOT-23 5233B mark 8m sot-23 Zener 5.1V 5228B MMBZ5226B MMBZ5257B SOT-23 Zener Diode Zener diode 81A

    MPSA65

    Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
    Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


    Original     		PDF MMBTA65 PZTA65 OT-23 OT-223 MPSA64 OT-223 MPSA65 CBVK741B019 F63TNR MMBTA65 PN2222N PZTA65 bel 188 transistor

    sot23 mark code e2

    Abstract: mark PD sot-23 BC817 BC818-25 BC818-40 FAIRCHILD SOT-23 MARK 30
    Text: BC818-25 / BC818-40 BC818-25 BC818-40 C E SOT-23 B Mark: 6F. / 6G. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. See BC817 for characteristics.


    Original     		PDF BC818-25 BC818-40 BC818-25 OT-23 BC817 sot23 mark code e2 mark PD sot-23 BC818-40 FAIRCHILD SOT-23 MARK 30

    SOT23 MARK Y2

    Abstract: Zener Diode BZx 84 diode ZENER y8 sot23 212 t sot-23 3V3 -ZENER DIODE mark Y1 SOT-23 diode 5V1 sot23 BZX 5.1v 6V2 Zener Diode SOT zener BZX 3V3
    Text: Tolerance: C = 5% Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value TSTG Storage Temperature Range -55 to +150 °C TJ + 150 °C IFRM Maximum Junction Operating Temperature Total Device Dissipation Derate above 25°C Repetitive Peak Forward Current IFRM


    Original     		PDF OT-23 SOT23 MARK Y2 Zener Diode BZx 84 diode ZENER y8 sot23 212 t sot-23 3V3 -ZENER DIODE mark Y1 SOT-23 diode 5V1 sot23 BZX 5.1v 6V2 Zener Diode SOT zener BZX 3V3

    CBVK741B019

    Abstract: F63TNR MMBTA13 MPSA13 MPSA14 PN2222N PZTA13
    Text: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.


    Original     		PDF MMBTA13 PZTA13 OT-23 OT-223 MPSA14 CBVK741B019 F63TNR MMBTA13 MPSA13 PN2222N PZTA13

    25c reference top mark sot23

    Abstract: sot23 A63
    Text: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


    Original     		PDF MPSA63 MMBTA63 PZTA63 MPSA63 MMBTA63 OT-23 OT-223 MPSA64 25c reference top mark sot23 sot23 A63

    Untitled

    Abstract: No abstract text available
    Text: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.


    Original     		PDF MPSA13 MMBTA13 PZTA13 MPSA13 MMBTA13 OT-23 OT-223 MPSA14

    Untitled

    Abstract: No abstract text available
    Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


    Original     		PDF MPSA65 MMBTA65 PZTA65 MPSA65 MMBTA65 OT-23 OT-223 MPSA64

    BCW65C

    Abstract: BSR14 SOT23 NE
    Text: BSR14 BSR14 C E SOT-23 B Mark: U8 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See BCW65C for characteristics. Absolute Maximum Ratings* Symbol


    Original     		PDF BSR14 OT-23 BCW65C BSR14 SOT23 NE

    CJE SOT-23

    Abstract: sot23 mark code e2 FAIRCHILD SOT-23 MARK 30 BCW68G BSR15 On semiconductor date Code sot-23 SOT-23 CEB mark PD sot-23 MARK wc SOT23
    Text: BSR15 BSR15 C E SOT-23 B Mark: T7 PNP General Purpose Amplifier This device is designed for use as general purpose amplifier and switches requiring collector currents to 500 mA. Sourced from Process 63. See BCW68G for characteristics. Absolute Maximum Ratings*


    Original     		PDF BSR15 OT-23 BCW68G CJE SOT-23 sot23 mark code e2 FAIRCHILD SOT-23 MARK 30 BSR15 On semiconductor date Code sot-23 SOT-23 CEB mark PD sot-23 MARK wc SOT23

    BC817-25

    Abstract: BC817-40
    Text: BC817-25 / BC817-40 BC817-25 BC817-40 C E SOT-23 B Mark: 6B. / 6C. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings*


    Original     		PDF BC817-25 BC817-40 BC817-25 OT-23 BC817-40

    Untitled

    Abstract: No abstract text available
    Text: BCV26 BCV26 C E SOT-23 B Mark: FD PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		PDF BCV26 OT-23

    transistor bel 100

    Abstract: bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
    Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol


    Original     		PDF MMBTA14 PZTA14 OT-23 OT-223 transistor bel 100 bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14

    BEL 188 pnp TRANSISTOR characteristics

    Abstract: bel 188 transistor pnp transistor bel 188 bel 188 transistor pnp Darlington transistor to 92 CBVK741B019 F63TNR MMBTA64 MPSA64 PN2222N
    Text: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MMBTA64 PZTA64 OT-23 OT-223 BEL 188 pnp TRANSISTOR characteristics bel 188 transistor pnp transistor bel 188 bel 188 transistor pnp Darlington transistor to 92 CBVK741B019 F63TNR MMBTA64 MPSA64 PN2222N

    BEL 188 pnp TRANSISTOR characteristics

    Abstract: bel 188 transistor pnp pnp transistor bel 188 F63TNR MMBTA64 MPSA64 PN2222N PZTA64 CBVK741B019 bel 188 transistor
    Text: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MMBTA64 PZTA64 OT-23 OT-223 BEL 188 pnp TRANSISTOR characteristics bel 188 transistor pnp pnp transistor bel 188 F63TNR MMBTA64 MPSA64 PN2222N PZTA64 CBVK741B019 bel 188 transistor

    FAIRCHILD SOT-23 MARK 30

    Abstract: BCW31 BCW32 BCW33
    Text: BCW31 / BCW32 / BCW33 BCW31 BCW32 BCW33 C E B SOT-23 Mark: D1 / D2 / D3 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Absolute Maximum Ratings* Symbol 3 TA = 25°C unless otherwise noted


    Original     		PDF BCW31 BCW32 BCW33 BCW31 BCW32 OT-23 FAIRCHILD SOT-23 MARK 30 BCW33

    mark 641 sot

    Abstract: mark 641 sot dc BSS63 sot23 mark code CB CB SOT-23
    Text: BSS63 BSS63 C E SOT-23 B Mark: T3 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF BSS63 OT-23 mark 641 sot mark 641 sot dc BSS63 sot23 mark code CB CB SOT-23

    BCW71

    Abstract: On semiconductor date Code
    Text: BCW71 BCW71 C E SOT-23 B Mark: K1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF BCW71 OT-23 BCW71 On semiconductor date Code

    BSS64

    Abstract: 01BV CJE SOT-23
    Text: BSS64 BSS64 C E SOT-23 B Mark: U3 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF BSS64 OT-23 BSS64 01BV CJE SOT-23