Q62902-B152-F222
Abstract: Q62902-B156-F222 Q62901-B65 Q62902-B155 a5954 lsp 5502 Q62902-B153-F222 LED LR 3330 Q62901-B62 Q62703-Q2376
Text: Lumineszenzdioden Light Emitting Diodes SMT-LED SMT-LEDs Package Type Emissionsfarbe Emission color λdom typ. [nm] Farbe der Lichtaustrittsfläche IV Color of light [mcd] emitting area TOPLED LH T674-KM LH T674-L LH T674-M LH T674-LN LS T670-HK LS T670-J
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T674-KM
T674-L
T674-M
T674-LN
T670-HK
T670-J
T670-K
T670-L
T670-JM
Q62902-B152-F222
Q62902-B156-F222
Q62901-B65
Q62902-B155
a5954
lsp 5502
Q62902-B153-F222
LED LR 3330
Q62901-B62
Q62703-Q2376
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Q62902-B152-F222
Abstract: lg led tv electronic diagram Q62902-B156-F222 Q62902-B155 A671 transistor Q62901-B65 BZW 70/20 Q62901-B62 a5954 Datasheet diode BZW 70-20
Text: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES SMT-LED-Typenbezeichnungsschema SMT LED type designation system 2nd and 3rd letter for the color of all MULTILED package outlines higher wavelength = first letter, lower wavelength = second and third letter
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Q62902-B154-F222
Q62902-B141-F222
GPXY6739
GPXY6738
Q62902-B152-F222
lg led tv electronic diagram
Q62902-B156-F222
Q62902-B155
A671 transistor
Q62901-B65
BZW 70/20
Q62901-B62
a5954
Datasheet diode BZW 70-20
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Q62901-B65
Abstract: Q62902-B156-F222 Q62902-B152-F222 A671 transistor Datasheet diode BZW 70-20 LW T67C-S2U1-35 Q62703-Q6351 LM776 din standard 5480 Q62703-P4699
Text: LUMINESZENZDIODEN LIGHT EMITTING DIODES 58 Wavelength λdomtyp. 645 nm 633 nm 628 nm 617 nm 606 nm 590 nm 587 nm 570 nm 560 nm 528 nm 505 nm 470 nm 465 nm Viewing Angle (typ.) 30 … 70 degrees 40 … 80 degrees > 80 degrees > 80 degrees > 80 degrees Die Technology
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HOP2000)
Q62902-B154-F222
Q62902-B141-F222
GEXY6720
Q62901-B65
Q62902-B156-F222
Q62902-B152-F222
A671 transistor
Datasheet diode BZW 70-20
LW T67C-S2U1-35
Q62703-Q6351
LM776
din standard 5480
Q62703-P4699
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MO178AA
Abstract: MO178AB JEDEC to 243 MO-137 MO-187 TSOT23 SOT23W-3 JEDEC MO-187 ba
Text: PACKAGE OUTLINES PLASTIC QUARTER-SIZED SMALL OUTLINE PACKAGE QSOP 24 leads Package Designator LF 8.74 .344 8.55 .337 8º 0º 24 0.25 .010 0.19 .007 3.99 .157 3.81 .150 6.20 .244 5.79 .228 A 1 1.27 .050 0.40 .016 2 0.254 .010 REF 24X SEATING PLANE GAUGE PLANE
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MO-137
MO-187
MO178AA
MO178AB
JEDEC to 243
TSOT23
SOT23W-3
JEDEC MO-187 ba
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A3213
Abstract: hall magnetic bipolar A3213ELHLT-T A3213EUA-T A3213LLHLT-T A3213LUA-T A3214 A3214ELHLT-T EH-012-1
Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless
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A3213
A3214
A3214
hall magnetic bipolar
A3213ELHLT-T
A3213EUA-T
A3213LLHLT-T
A3213LUA-T
A3214ELHLT-T
EH-012-1
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Untitled
Abstract: No abstract text available
Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless
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A3213
A3214
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A3213
Abstract: A3213ELHLT-T A3213EUA-T A3213LLHLT-T A3213LUA-T A3214 A3214ELHLT-T magnet A3213LLH
Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless
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A3213
A3214
A3214
A3213ELHLT-T
A3213EUA-T
A3213LLHLT-T
A3213LUA-T
A3214ELHLT-T
magnet
A3213LLH
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A3213
Abstract: A3213ELHLT-T A3213EUA-T A3213LLHLT-T A3213LUA-T A3214 A3214ELHLT-T la3213
Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless
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A3213
A3214
A3214
A3213ELHLT-T
A3213EUA-T
A3213LLHLT-T
A3213LUA-T
A3214ELHLT-T
la3213
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A3213
Abstract: A3213ELHLT-T A3213EUA-T A3213LLHLT-T A3213LUA-T A3214 A3214ELHLT-T
Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless
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A3213
A3214
A3214
A3213ELHLT-T
A3213EUA-T
A3213LLHLT-T
A3213LUA-T
A3214ELHLT-T
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Untitled
Abstract: No abstract text available
Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless
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A3213
A3214
A3214
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A1302
Abstract: A1302EUA-T "Hall Effect Sensors" A1301EUA-T A1302KUA-T A1301ELHLT-T A1301EUA A1302EUA A1301 a1302k
Text: A1301 and A1302 Continuous-Time Ratiometric Linear Hall Effect Sensors Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ The A1301 and A1302 are continuous-time, ratiometric, linear Hall-effect sensors. They are optimized to accurately provide a voltage output that is proportional to an applied magnetic
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A1301
A1302
A1302
A1301,
A1302.
A1302EUA-T
"Hall Effect Sensors"
A1301EUA-T
A1302KUA-T
A1301ELHLT-T
A1301EUA
A1302EUA
a1302k
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Untitled
Abstract: No abstract text available
Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless
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Original
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A3213
A3214
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PDF
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Untitled
Abstract: No abstract text available
Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless
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A3213
A3214
A3214
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Allegro 41 HALL
Abstract: A3213 A3213ELHLT-T A3214EUA-T
Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless
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A3213
A3214
Allegro 41 HALL
A3213ELHLT-T
A3214EUA-T
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A3214LUA-T
Abstract: No abstract text available
Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Not for New Design These parts are in production but have been determined to be NOT FOR NEW DESIGN. This classification indicates that sale of this device is currently restricted to existing customer applications.
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A3213
A3214
A3214LUA-T
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A3214
Abstract: A3213 A3213ELHLT-T A3213EUA-T A3213LLHLT-T A3213LUA-T A3214ELHLT-T ams YEAR DATE CODE A3214LUA-T
Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless
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A3213
A3214
A3214
A3213ELHLT-T
A3213EUA-T
A3213LLHLT-T
A3213LUA-T
A3214ELHLT-T
ams YEAR DATE CODE
A3214LUA-T
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A3213ELHLT-T
Abstract: A3213EUA-T A3213 A3214 A3214ELHLT-T IPC-7351 A3214EUA-T
Text: A3213 and A3214 Micropower Ultra-Sensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A3213 and A3214 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in batteryoperated, hand-held equipment such as cellular and cordless
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A3213
A3214
A3214
A3213ELHLT-T
A3213EUA-T
A3214ELHLT-T
IPC-7351
A3214EUA-T
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PDF
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allegro A3212
Abstract: GH-057-2
Text: A3211 and A3212 Micropower, Ultrasensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A 3211 and A3212 integrated circuits are ultrasensitive, pole independent Hall-effect switches with latched digital output. These devices are especially suited for operation
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A3211
A3212
allegro A3212
GH-057-2
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4 lead SMD Hall sensors
Abstract: smd hall smd hall effect sensor A3212ELH A3212ELHLT application notes SMD Hall C PH-016 A3211 A3212 A3212EEHLT
Text: A3211 and A3212 Micropower, Ultra-sensitive Hall-effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A 3211 and A3212 integrated circuits are ultra-sensitive, pole independent Hall-effect switches with latched digital output. These sensors are especially suited for operation in
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A3211
A3212
A3212
4 lead SMD Hall sensors
smd hall
smd hall effect sensor
A3212ELH
A3212ELHLT application notes
SMD Hall C
PH-016
A3212EEHLT
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Untitled
Abstract: No abstract text available
Text: LOW VOLTAGE DETECTOR R3111x SERIES NO. EA-056-061205 OUTLINE The R3111 series are CMOS-based voltage detector ICs with high detector threshold accuracy and ultra-low supply current, which can be operated at an extremely low voltage and is used for system reset as an example.
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R3111x
EA-056-061205
R3111
R3111XXXXC
R3111x
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hallsensor smd
Abstract: No abstract text available
Text: A3211 and A3212 Micropower, Ultrasensitive Hall-Effect Switches Features and Benefits Description ▪ ▪ ▪ ▪ The A 3211 and A3212 integrated circuits are ultrasensitive, pole independent Hall-effect switches with latched digital output. These sensors are especially suited for operation
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A3211
A3212
hallsensor smd
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mark lh sot23
Abstract: No abstract text available
Text: SEM ICO NDUCTO R TECHNICAL DATA MMBTA13/14 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. MAXIMUM RATING Ta=25°C SYMBOL CHARACTERISTIC Collector-Base oltage CBO Collector-Emitter oltage CES Emitter-Base oltage EBO Collertor Current
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OCR Scan
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MMBTA13/14
OT-23
idths300//S,
MMBTA13
MMBTA14
mark lh sot23
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PDF
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TK110
Abstract: TK11051M DB3-J159 Nuclear Radiation Level Sensor
Text: TK11051M S P E C IF IC A T IO N TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3.Funct ion 4.Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit Block Diagram 10.Pin Assignment 11.Package Outline Dim e n s i o n s / M a r k i n g
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TK11051M
DB3-J159
TK11051M.
TK110*
QH7-B002.
DP3-F016.
0B3-J159
TK110
TK11051M
DB3-J159
Nuclear Radiation Level Sensor
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PDF
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SOT23 MARK Y2
Abstract: BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A
Text: Nominal Zener Voltage 'Note 1 250 mW 250 mW 250 mW 250 mW 350 mW Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Mark Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Marik Cathode = Polarity Mark (‘ Notes 2.3,14) ('Notes 2,3,18) (•Notes 2,3,18)
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OCR Scan
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DO-204AH
DO-35)
OT-23
O-236AA/AB)
MLL4678
MLL4679
MLL4680
L4681
MLL4682
SOT23 MARK Y2
BZXB4C10
MARK Y6 Transistor
SOT23 MARK Y3
1N5239B equivalent
BZXB4C4V7
MMBPU131
glass zener diodes motorola 1n746
B2X84C
1N756A
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PDF
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