JRC 14
Abstract: jrc 8 pin MARK H1 SOT-89 MARK MARK D2 SOT23 jrc 14 pin MARK C3 SOT23 56A1 SDMP30 144L1
Text: STANDARD MARK LAYOUT 7. STANDARD MARK LAYOUT The standard mark layout of our packages are as follows. For further information, please contact to our sales offices. <Lead Insertion Type> Name Number of pins TO-220 3, 4 ,5 Mark Layout Device name JRC Logo Device name
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O-220
SC82AB
SC88A
JRC 14
jrc 8 pin
MARK H1 SOT-89
MARK
MARK D2 SOT23
jrc 14 pin
MARK C3 SOT23
56A1
SDMP30
144L1
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Untitled
Abstract: No abstract text available
Text: BC857S PNP, Multi-Chip, General-Purpose Amplifier Description This device is designed for general-purpose amplifier applications at collector currents to 200 mA. Sourced from Process 68. Block Diagram E2 E2 C2 B2 B1 C1 E1 B2 C1 C2 SC70-6 Mark: .3C Mark: .2A
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BC857S
SC70-6
BC857S
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SOD123 footprint
Abstract: MINI-MELF schottky BLUE CATHODE MARKING CODE diode sod123 W1 MINI-MELF schottky BLUE CBVK741B019 F63TNR MBR0520L MMSZ5221B MBR0520L SOD123
Text: MBR0520L MBR0520L Features • 0.5 Ampere, low forward voltage, less then 385mV • 400 milliwatt Power Dissipation package • Compact surface mount package with the same footprint as mini-melf SOD123 SOD123 Mark:B2 Mark: B4 CATHODE COLOR BAND DENOTES Mark:
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MBR0520L
385mV
OD123
SOD123 footprint
MINI-MELF schottky BLUE CATHODE
MARKING CODE diode sod123 W1
MINI-MELF schottky BLUE
CBVK741B019
F63TNR
MBR0520L
MMSZ5221B
MBR0520L SOD123
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84-BALL
Abstract: EDE2508AEBG
Text: EDE2508AEBG, EDE2516AEBG 84-ball FBGA Unit: mm 8.0 ± 0.1 0.2 S B 12.5 ± 0.1 INDEX MARK 0.2 S A 0.2 S 1.20 max. S 0.1 S 0.35 ± 0.05 B φ0.15 M S A B 0.8 84-φ0.45 ± 0.05 11.2 A INDEX MARK 1.6 0.8 6.4 ECA-TS2-0224-01 Data Sheet E1175E20 Ver. 2.0 74
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EDE2508AEBG,
EDE2516AEBG
84-ball
ECA-TS2-0224-01
E1175E20
EDE2508AEBG
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mark Bb
Abstract: e5 marking
Text: SEMICONDUCTOR USFB13L MARKING SPECIFICATION USF PACKAGE 1. Marking method Laser Marking 2. Marking 2 BB JA 1 CATHODE MARK No. Item Marking Description Device Mark BB USFB13L * Lot No. JA Manufacturing date Year/Week Note) * Lot No. marking method Year Periode (Year)
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USFB13L
mark Bb
e5 marking
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2G MARKING
Abstract: PG12GSUSC
Text: SEMICONDUCTOR PG12GSUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 2G 0 1 2 1 No. Item Marking Description Device Mark 2G PG12GSUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]
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PG12GSUSC
2G MARKING
PG12GSUSC
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PG15FBUSC
Abstract: No abstract text available
Text: SEMICONDUCTOR PG15FBUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 BD 1 0 1 2 1 No. Item Marking Description Device Mark BD PG15FBUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]
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PG15FBUSC
PG15FBUSC
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3J10
Abstract: PG03JSUSC
Text: SEMICONDUCTOR PG03JSUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 3J 1 0 1 2 1 No. Item Marking Description Device Mark 3J PG03JSUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]
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PG03JSUSC
3J10
PG03JSUSC
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sd marking
Abstract: PG15GSUSC
Text: SEMICONDUCTOR PG15GSUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 SD 1 0 1 2 1 No. Item Marking Description Device Mark SD PG15GSUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]
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PG15GSUSC
sd marking
PG15GSUSC
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marking 4f
Abstract: No abstract text available
Text: SEMICONDUCTOR PG24FSUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 4F 1 0 1 2 1 No. Item Marking Description Device Mark 4F PG24FSUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]
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PG24FSUSC
marking 4f
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USFB13
Abstract: Device Marking A3 A301
Text: SEMICONDUCTOR USFB13 MARKING SPECIFICATION USF PACKAGE 1. Marking method Laser Marking 2. Marking 2 A3 0 1 1 CATHODE MARK No. Item Marking Description Device Mark A3 USFB13 * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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USFB13
USFB13
Device Marking A3
A301
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USFB053
Abstract: No abstract text available
Text: SEMICONDUCTOR USFB053 MARKING SPECIFICATION USF PACKAGE 1. Marking method Laser Marking 2. Marking 2 53 0 1 1 CATHODE MARK No. Item Marking Description Device Mark 53 USFB053 * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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USFB053
USFB053
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in5351b
Abstract: 0505-0671 EN 50065-1 LAL05TB120K PLT-22 MOTOROLA Neuron Chip 470k RESISTORS 50065-1 Using the LONWORKS PLT- 22 Power Line Transceiver PL-20A-LOW
Text: Using the LONWORKS PLT-22 Power Line Transceiver in European Utility Applications 70kHz – 95kHz Operation Version 1 Corporation 078-0180-01A Echelon, LON, LON W ORKS, LonBuilder, NodeBuilder, LonManager, LonTalk, LON MARK , Neuron, 3120, 3150, the LonUsers logo, the LON MARK logo, and
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PLT-22
70kHz
95kHz
78-0180-01A
150kHz.
EN50065-1
ESHS30
PLT-22
in5351b
0505-0671
EN 50065-1
LAL05TB120K
MOTOROLA Neuron Chip
470k RESISTORS
50065-1
Using the LONWORKS PLT- 22 Power Line Transceiver
PL-20A-LOW
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5H MARKING
Abstract: PG05HSUSC mark J2 marking 5h
Text: SEMICONDUCTOR PG05HSUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 5H 1 0 1 2 1 No. Item Marking Description Device Mark 5H PG05HSUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]
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PG05HSUSC
5H MARKING
PG05HSUSC
mark J2
marking 5h
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E1390E30
Abstract: EDE1108AFSE EDE1104AFSE
Text: EDE1104AFSE, EDE1108AFSE Package Drawing 60-ball FBGA Unit: mm 8.0 ± 0.1 0.2 S B 10.5 ± 0.1 INDEX MARK 0.2 S A 0.2 S 1.18 max. S 0.1 S 0.32 ± 0.05 B φ0.15 M S A B 0.8 60-φ0.45 ± 0.05 8.0 A INDEX MARK 1.6 0.8 6.4 ECA-TS2-0286-01 Data Sheet E1390E30 Ver. 3.0
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EDE1104AFSE,
EDE1108AFSE
60-ball
ECA-TS2-0286-01
E1390E30
E1390E30
EDE1108AFSE
EDE1104AFSE
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CBVK741B019
Abstract: F63TNR FDG6302P FFB3904 FFB3906 FFB3946 FMB3946 SC70-6 318 SC70-6
Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AB FFB3946 / FMB3946 FMB3946 FFB3946 B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .002 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is designed for use as a general purpose
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SC70-6
FFB3946
FMB3946
FFB3946
FFB3904
FFB3906
CBVK741B019
F63TNR
FDG6302P
FFB3904
FFB3906
FMB3946
SC70-6
318 SC70-6
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96-ball FBGA
Abstract: EDJ1108BBSE EDJ1116BBSE
Text: EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE 96-ball FBGA Unit: mm 8.0 ± 0.1 0.2 S B 13.5 ± 0.1 INDEX MARK 0.2 S A 0.2 S 1.17 max. S 0.1 S 0.32 ± 0.05 96-φ0.45 ± 0.05 φ0.12 M S A B 0.4 A 12.0 0.8 B INDEX MARK 1.6 0.8 6.4 ECA-TS2-0277-01 Data Sheet E1375E50 Ver. 5.0
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EDJ1104BBSE,
EDJ1108BBSE,
EDJ1116BBSE
96-ball
ECA-TS2-0277-01
E1375E50
96-ball FBGA
EDJ1108BBSE
EDJ1116BBSE
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PG08HSUSC
Abstract: No abstract text available
Text: SEMICONDUCTOR PG08HSUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 8H 1 0 1 2 1 No. Item Marking Description Device Mark 8H PG08HSUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]
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PG08HSUSC
PG08HSUSC
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USFB073
Abstract: No abstract text available
Text: SEMICONDUCTOR USFB073 MARKING SPECIFICATION USF PACKAGE 1. Marking method Laser Marking 2. Marking 2 73 0 1 1 CATHODE MARK No. Item Marking Description Device Mark 73 USFB073 * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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USFB073
USFB073
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USFZ5.6V
Abstract: No abstract text available
Text: SEMICONDUCTOR USFZ5.6V MARKING SPECIFICATION USF PACKAGE 1. Marking method Laser Marking 2. Marking 2 56 0 1 1 CATHODE MARK No. Item Marking Description Device Mark 56 USFZ5.6V * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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Untitled
Abstract: No abstract text available
Text: NIPCDOOOl O •OS-CON’ is SANYO ELECTRIC CO.,LTD. Trade Mark. CAT. No. E1002B
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E1002B
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1P NPN
Abstract: FFB2222A FMB2222A MMPQ2222A SC70-6 SOIC-16
Text: Is S'-^iC T Z3 NSCJLJC: * "T»»? FMB2222A MMPQ2222A C2 E1 C1 E1 pin#1 p-E2 B1 B2 % SC70-6 SuperSOT -6 Mark: .1P Mark: .1P / MMPQ2222A pin#1 • C1 SOIC-16 C1 NPN Multi-Chip General Purpose Amplifier This device is for use as a medium power am plifier and switch requiring collector
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FFB2222A
FMB2222A
MMPQ2222A
SC70-6
SOIC-16
200ns
1P NPN
MMPQ2222A
SC70-6
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Untitled
Abstract: No abstract text available
Text: ^ F M ic n ^ r a jr : T n p FM B2907A FFB2907A M M PQ2907A E2 pin #1 E1 S C 7 0 -6 Mark: ,2F Mark: ,2F PNP Multi-Chip General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63.
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B2907A
FFB2907A
PQ2907A
FFB2907A
FMBT2907A
MMPQ2907A
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plessey mark 22 connectors
Abstract: plessey connector assembly CT 00 RT 53884 05124 circular connector plessey connectors AB Connectors "1.6 - 20 UNEF-2A LL 20 AB plessey mark 14 connectors
Text: Mk 22 Connectors Index CIRCULAR CONNECTORS MARK 22 General Description and Classification The Mark 22 Connector Family Orientation Insulator Shelf Size/Contact Arrangements 1 2 3 4, 5 Free U nit Cable Clamping Style A Free U nit with Shrink Sleeve Outlet Style G
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