MA3Z551 Search Results

MA3Z551 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MA3Z551		Panasonic	Silicon epitaxial planar type		Original	PDF
MA3Z551		Panasonic	Diode		Original	PDF
MA3Z551		Panasonic	DIODE PIN ATTENUATOR 40V 3SC-70		Original	PDF

MA3Z551 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
3pin variable resistor pin connection Abstract: MARKING MY MA3Z551 Text: PIN Diodes MA3Z551 Silicon epitaxial planar type Unit : mm For high-frequency variable resistor attenuator 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 0.3 − 0 0.65 1.3 ± 0.1 1 0.65 2.0 ± 0.2 3 2 Parameter Symbol Rating Unit Reverse voltage DC VR 40 V Peak reverse voltage	Original	PDF	MA3Z551 3pin variable resistor pin connection MARKING MY MA3Z551
MA3Z551 Abstract: No abstract text available Text: PIN diodes MA3Z551 Silicon epitaxial planar type 0.425 Unit: mm For high-frequency variable resistor attenuator 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • Small diode capacitance CD • Large variable range of forward dynamic resistance rf	Original	PDF	MA3Z551 MA3Z551
Untitled Abstract: No abstract text available Text: PIN diodes MA3Z551 Silicon epitaxial planar type 0.425 Unit: mm For high-frequency variable resistor attenuator 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 5˚ M Di ain sc te on na tin nc ue e/ d • Small diode capacitance CD • Large variable range of forward dynamic resistance rf	Original	PDF	MA3Z551
MA3Z551 Abstract: No abstract text available Text: PIN diodes MA3Z551 Silicon epitaxial planar type 0.425 Unit: mm For high-frequency variable resistor attenuator 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 2 0.2±0.1 1 5˚ ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo	Original	PDF	MA3Z551 MA3Z551
MA3Z551 Abstract: No abstract text available Text: PIN Diodes MA3Z551 Silicon epitaxial planar type Unit : mm For high-frequency variable resistor attenuator 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 0.3 − 0 0.65 1.3 ± 0.1 1 0.65 2.0 ± 0.2 3 2 Parameter Symbol Rating Unit Reverse voltage DC VR 40 V Peak reverse voltage	Original	PDF	MA3Z551 MA3Z551
MARKING MY Abstract: 3pin variable resistor 3pin variable resistor pin connection Text: MA111 PIN Diodes MA3Z551 Silicon epitaxial planer type Unit : mm 2.1±0.1 For attenuation of high-frequency variable resistor 0.425 1.25±0.1 0.425 Small diode capacity CD ● Large variable range of forward dynamic resistance rf ● Mini package, enabling down-sizing of the equipment and automatic	Original	PDF	MA111 MA3Z551 100MHz MARKING MY 3pin variable resistor 3pin variable resistor pin connection
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	PDF	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
2SC5936 Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	PDF	XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
MA661 Abstract: No abstract text available Text: • Schottky Barrier Diodes SBD (For Power) n Type No. Main Characteristics (Ta =25 "C) Vf Vr Ir tr* max.(V) typ.(ns) (mA) (V) Package No. ■ —' < r Category A A A ■ Fast Recovery Diodes (FRD) ■ .- ■ MA749/A 40/45 5 0.55 11 1 TO-220(F) D55	OCR Scan	PDF	MA749/A O-220 O-220D AMA629 MA3U649 MA649/650 MA7D49/A MA3U750 MA3Z551 MA558 MA661
3866S Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515 Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series	OCR Scan	PDF	1020G N12861 N12B62 MN1381 MN13811 MN13821 15P0802 15P5402 58851A 70803A 3866S transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
MA629 Abstract: MA7U49 220d MA750A MA689 Text: Diode • Schottky Barrier Diodes SBD (For Power) ■ Fast Recovery Diodes (FRD) Main Characteristics (Ta = 2 5 "C) Category Type No. trr* (A) max (V) typ (ns) (mA) 5 0.55 11 1 I f (AV\| (V) Category Package VF Vr MA749/A 40/45 Main Characteristics (Ta = 2 5 °C)	OCR Scan	PDF	MA629 MA3U649 MA3U650 MA649 MA749/A MA7D49/A A3U750 T0-220 O-220D MA551 MA7U49 220d MA750A MA689
AN3962FB Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202 Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030	OCR Scan	PDF	MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202