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    MA A235 Search Results

    MA A235 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPA2351T1P-E4-A Renesas Electronics Corporation Nch Dual Power Mosfet 30V 5.7A 40Mohm 4-Pin Eflip-Lga Visit Renesas Electronics Corporation
    UPA2350BT1G-E4-A Renesas Electronics Corporation N-Channel Mos Field Effect Transistor For Switching, EFLIP(BGA), /Embossed Tape Visit Renesas Electronics Corporation
    UPA2352BT1G-E4-A Renesas Electronics Corporation N-Channel Mos Field Effect Transistor For Switching Visit Renesas Electronics Corporation
    UPA2350T1P-E4-A Renesas Electronics Corporation Nch Dual Power Mosfet 20V 6.0A 35Mohm 4-Pin Eflip-Lga Visit Renesas Electronics Corporation
    UPA2353T1G-E4-A Renesas Electronics Corporation N-Channel Mos Field Effect Transistor For Switching Visit Renesas Electronics Corporation
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    MA A235 Price and Stock

    Quantic X-Microwave XR-A235-0204C

    Attenuators Fixed Attenuators, RCAT-06+SMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics XR-A235-0204C
    • 1 $256
    • 10 $249.6
    • 100 $249.6
    • 1000 $249.6
    • 10000 $249.6
    		Get Quote

    Quantic X-Microwave XM-A235-0204C

    Attenuators Fixed Attenuators, RCAT-06+SMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics XM-A235-0204C
    • 1 $256
    • 10 $249.6
    • 100 $249.6
    • 1000 $249.6
    • 10000 $249.6
    		Get Quote

    Eaton Corporation P4SMA235A

    ESD Protection Diodes / TVS Diodes TVS P4SMA 200V UNI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics P4SMA235A
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.083
    		Get Quote

    Eaton Corporation P4SMA235CA

    ESD Protection Diodes / TVS Diodes TVS P4SMA 200V BI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics P4SMA235CA
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.083
    		Get Quote

    MA A235 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Loctite 405

    Abstract: 5056-H18 A496 B494 MG12A A274 PB-300 A465 switch caps A115
    Text: SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTICE MISCELLANEOUS HARDWARE & ACCESSORIES SWITCH HARDWARE. .V2 PUSHBUTTON AND TOGGLE CAPS.V2 - V3 SECURITY GUARDS.V3 V APEM, 63 Neck Road, HAVERHILL, MA USA 01835-0788 TOLL FREE: 877 246-7890 FAX: (978) 372-3534 E-mail: [email protected]


    Original     		PDF A168P1 15/LAIN A2122 Loctite 405 5056-H18 A496 B494 MG12A A274 PB-300 A465 switch caps A115

    bfr96s

    Abstract: No abstract text available
    Text: SIEMENS BFR 96S NPN Silicon RF Transistor • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 2 GHz at collector currents from 10 mA to 70 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF Q68000-A5689 bfr96s

    ZO 150 74

    Abstract: ZO 103 MA 75 522 zo 107 MA 10MHZ BFQ74 Q62702-F788 VCE0518I siemens 800 169 O zo 107 Siemens S7 400
    Text: SIEMENS NPN Silicon RF Transistor • For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available.


    OCR Scan     		PDF Q62702-F788 Bas-135 fi23SbOS D0b717b ZO 150 74 ZO 103 MA 75 522 zo 107 MA 10MHZ BFQ74 VCE0518I siemens 800 169 O zo 107 Siemens S7 400

    transistor zo 607 MA 7S

    Abstract: zo 607 MA 7S zo 607 MA 7s 524 ZO 607 MA 7A zo 607 MA 7A 435 ZO 607 MA 7A 523 ZO 607 MA 7A 524 BFQ181 zo 607 MA 7A 437 cerec
    Text: SIEMENS NPN Silicon RF Transistor BFQ181 Preliminary Data • For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. • / t = 8 GHz F = 1.3 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF BFQ181 vce05181 Q62702-F1295 235L05 00b7SE7 transistor zo 607 MA 7S zo 607 MA 7S zo 607 MA 7s 524 ZO 607 MA 7A zo 607 MA 7A 435 ZO 607 MA 7A 523 ZO 607 MA 7A 524 BFQ181 zo 607 MA 7A 437 cerec

    zo 103 ma

    Abstract: transistor ZO 103 MA siemens OF IC 741 SS 424 02 31 zo 103 ma 75 750 MARKING CODE F5T Q62702-F1104 BFQ 51 ZO 103 NA BFQ73S
    Text: SIEMENS NPN Silicon RF Transistor BFQ 73S • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 2 GHz at collector currents from 10 mA to 70 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available.


    OCR Scan     		PDF vce05181 Q62702-F1104 A23Sb05 DDb71bS zo 103 ma transistor ZO 103 MA siemens OF IC 741 SS 424 02 31 zo 103 ma 75 750 MARKING CODE F5T BFQ 51 ZO 103 NA BFQ73S

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3904 NPN Type Marking Ordering Code (tape and reel) PinCtonfigu ration 1 2 3 Package1)


    OCR Scan     		PDF Q68000-A4417 OT-23 EHP00770 EHP00772 S35bOÂ 01EES4S A235b05 012254b

    BFY 94 transistor

    Abstract: No abstract text available
    Text: SIEM ENS NPN Silicon RF Transistor BFY 90 • For broadband amplifiers up to 1 GHz and non-saturated switches at collector currents from 1 mA to 20 mA. € CECC-type available: GEGC 50002/253. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF Q62702-F297 235bQ5 0Db74Bl BFY 94 transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Switching Transistors PZT 2907 PZT 2907 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: PZT 2222 NPN PZT 2222 A (NPN) Type Marking Ordering Code (tape and reel) Pin Configuration


    OCR Scan     		PDF Q62702-Z2028 Q62702-Z2025 OT-223 0235bD5 D1254bfl fl235bQ5 535bG5 G1E247G

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 93P NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. £ CECC-type available: C E C C 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF Q62702-F1051 OT-23 a23SbQS

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2907, SMBT 2907 A PNP Type Marking Ordering Code (tape and reel) PinC Contigui ation


    OCR Scan     		PDF Q68000-A6481 Q68000-A6473 OT-23 2222/A fi235bD5 0155S2S a235b05 012552b

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Switching Transistor PZT 3906 • High DC current gain 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: PZT 3904 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) PZT 3906


    OCR Scan     		PDF Q62702-Z2030 OT-223 EHN00057 A235bG5 122M7C

    5N521

    Abstract: BFQ71 VCE05181 bfq 85 Q62702-F775 siemens Pm 90 87 transistor zo 103 MA 7S 714
    Text: SIEMENS BFQ71 NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. B CECC-type available: CECC 50002/260.


    OCR Scan     		PDF BFQ71 Q62702-F775 0235bG5 DGb713S 5N521 VCE05181 bfq 85 siemens Pm 90 87 transistor zo 103 MA 7S 714

    BFQ 58

    Abstract: No abstract text available
    Text: SIEM ENS NPN Silicon RF Transistor BFQ 29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. S CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF Q62702-F659 OT-23 fi23SbDS BFQ 58

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Switching Transistor SXT 3904 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings


    OCR Scan     		PDF Q68000-A8396 OT-89 5235bQ5 G122b23 fl53Sb05 E35Li05

    transistor zo 103 MA 7S 738

    Abstract: BFQ72 SiEMENS PM 350 98 Q62702-F776 VCE05181 siemens 350 98 siemens Pm 90 87
    Text: SIEMENS NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. £ CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF BFQ72 Q62702-F776 fl235b05 00b714S transistor zo 103 MA 7S 738 SiEMENS PM 350 98 VCE05181 siemens 350 98 siemens Pm 90 87

    dm 0765

    Abstract: BFQ196 siemens DM 321 VCE0518I BFQ 244 cerec
    Text: SIEMENS BFQ 196 NPN Silicon RF Transistor Prelim inary Data • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA. 3 J • f t = 7.5 GHz F = 1.3 dB at 900 MHz


    OCR Scan     		PDF Q62702-F1348 fl235b05 00b7253 dm 0765 BFQ196 siemens DM 321 VCE0518I BFQ 244 cerec

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BFQ19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1,5GHz at collector currents from 10 mA to 70 mA • C EC C -type available: C E C C 50 002/259 E S P : Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF BFQ19S Q62702-F1088 OT-89 fl535b05 D1S2011 A235bD5

    Untitled

    Abstract: No abstract text available
    Text: BFG 19S SIEMENS NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers In antenna and telecommunications system s up to 1,5GHz at collector currents from 10 mA to 70 mA • C EC C -typ e available: C E C C 50 002/259 E S P : Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF BFG19S Q62702-F1359 OT-223 Uni-0-01 fl235bD5 D1517SÃ IS21I2 900MHz aS35bD5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silizium-Fotodiode mit sehr kleinem Dunkelstrom Silicon Photodiode with Very Low Dark Current SFH 219 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im


    OCR Scan     		PDF fl235t DG57L12 A235bGS 0S7L13

    BFX60

    Abstract: Q60206-X60 H7B marking H7B transistor H7B* marking microphone
    Text: SIEMENS BFX 60 NPN Silicon RF Transistor • For broadband amplifiers at collector currents up to 15 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFX 60 BFX 60 Q60206-X60 Pin Configuration 1 2


    OCR Scan     		PDF BFX60 BFX60 Q60206-X60 023SbOS fl23SbD5 H7B marking H7B transistor H7B* marking microphone

    LD275 led

    Abstract: MARKING 73 LD275 A235L SFH 567 siemens LD LD274
    Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 LD 275 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale • Sehr enger Abstrahlwinkel LD 274 • GaAs-IR-LED, hergestellt im Schmelzepitaxieverfahren


    OCR Scan     		PDF LD274 LD275 A23SbG5 DGS777L 2741re! 235b05 D0S7777 LD275 led MARKING 73 LD275 A235L SFH 567 siemens LD

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silizium-Fotoelement Silicon Photovoltaic Cell BPY11P Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • S p e zie ll geeignet für Anw endungen im B ereich von 420 nm bis 1060 nm


    OCR Scan     		PDF BPY11P A23Sti05 BPY11 S35b05

    PMB2307R

    Abstract: PMB2307 SIEMENS 2306 DECT siemens dect pmb 30MHZ "Mobile Communication ICs" PMB2307 equivalent
    Text: SIEMENS PMB 2307R PLL-Frequency Synthesizer Preliminary Data CMOS 1C Features • • • • Low operating current consumption typically 3.5 mA High input sensitivity, high input frequencies (220 MHz) Extremely fast phase detector without dead zone Linearization of the phase detector output by current


    OCR Scan     		PDF 2307R 65-MHz detector70 PMB2307R PMB2307 SIEMENS 2306 DECT siemens dect pmb 30MHZ "Mobile Communication ICs" PMB2307 equivalent

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Intelligent Sixfold Low-Side Switch TLE4216G Bipolar IC Features • • • • • • • • • Double low-side switch, 2 x 0.5 A Quad low-side switch, 4 x 50 mA Power limitation Open-collector outputs Overtemperature shutdown Status monitoring


    OCR Scan     		PDF TLE4216G Q67000-A9108 P-DSO-24-3 235bD5 AED00724 fl235bOS