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    M58WR Price and Stock

    Micron Technology Inc M58WR064EB70ZB6

    IC FLASH 64MBIT PARALLEL 56VFBGA
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    Micron Technology Inc M58WR032KB70ZQ6Z

    IC FLASH 32MBIT PARALLEL 88VFBGA
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    Micron Technology Inc M58WR064KU70ZA6E

    IC FLASH 64MBIT PARALLEL 88VFBGA
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    Micron Technology Inc M58WR064KT7AZB6E

    IC FLASH 64MBIT PARALLEL 56VFBGA
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    Micron Technology Inc M58WR064KB7AZB6E

    IC FLASH 64MBIT PARALLEL 56VFBGA
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    M58WR Datasheets (132)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M58WR016KL Numonyx 16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories Original PDF
    M58WR016KL STMicroelectronics 16- or 32-Mbit (x16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories Original PDF
    M58WR016KU Numonyx 16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories Original PDF
    M58WR016KU STMicroelectronics 16- or 32-Mbit (x16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories Original PDF
    M58WR016QB Numonyx 16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories Original PDF
    M58WR016QT Numonyx 16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories Original PDF
    M58WR032EB STMicroelectronics 32 MBIT (2MB X16, MULTIPLE BANK, BURST) 1.8V SUPPLY FLASH MEMORY Original PDF
    M58WR032EB70ZB6 STMicroelectronics 32 MBIT (2MB X16, MULTIPLE BANK, BURST) 1.8V SUPPLY FLASH MEMORY Original PDF
    M58WR032EB70ZB6T STMicroelectronics 32 MBIT (2MB X16, MULTIPLE BANK, BURST) 1.8V SUPPLY FLASH MEMORY Original PDF
    M58WR032ET STMicroelectronics 32 MBIT (2MB X16, MULTIPLE BANK, BURST) 1.8V SUPPLY FLASH MEMORY Original PDF
    M58WR032ET70ZB6T STMicroelectronics 32 MBIT (2MB X16, MULTIPLE BANK, BURST) 1.8V SUPPLY FLASH MEMORY Original PDF
    M58WR032FB STMicroelectronics 32 Mbit (2Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory Original PDF
    M58WR032FB60ZB6 STMicroelectronics 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory Original PDF
    M58WR032FB60ZB6E STMicroelectronics 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory Original PDF
    M58WR032FB60ZB6F STMicroelectronics 32 Mbit (2Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory Original PDF
    M58WR032FB60ZB6T STMicroelectronics 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory Original PDF
    M58WR032FB70ZB6 STMicroelectronics 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory Original PDF
    M58WR032FB70ZB6E STMicroelectronics 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory Original PDF
    M58WR032FB70ZB6F STMicroelectronics 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory Original PDF
    M58WR032FB70ZB6T STMicroelectronics 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory Original PDF
    ...

    M58WR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    VFBGA44

    Abstract: M58WR016KL M58WR016KU M58WR032KL M58WR032KU ADQ12
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL 16- or 32-Mbit x16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Data Brief Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers – VPP = 9 V for fast Program


    Original     		M58WR016KU M58WR016KL M58WR032KU M58WR032KL 32-Mbit VFBGA44 M58WR016KL M58WR032KL ADQ12 PDF

    A0-A21

    Abstract: CR10 M58WR064EB M58WR064ET VFBGA56
    Text: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		M58WR064ET M58WR064EB 54MHz VFBGA56 A0-A21 CR10 M58WR064EB M58WR064ET VFBGA56 PDF

    Untitled

    Abstract: No abstract text available
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit M58WR032KL70ZA6F PDF

    CR10

    Abstract: J-STD-020B M58WR128FB VFBGA56
    Text: M58WR128FT M58WR128FB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		M58WR128FT M58WR128FB 66MHz CR10 J-STD-020B M58WR128FB VFBGA56 PDF

    M58WR064K

    Abstract: No abstract text available
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit M58WR064K PDF

    M58WR032QB

    Abstract: CR10 M58WR016QB M58WR016QT M58WR032QT VFBGA56 8812h
    Text: M58WR016QT M58WR016QB M58WR032QT M58WR032QB 16 Mbit and 32 Mbit x16, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • ■ Supply voltage – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		M58WR016QT M58WR016QB M58WR032QT M58WR032QB 66MHz M58WR032QB CR10 M58WR016QB VFBGA56 8812h PDF

    CR10

    Abstract: CR14 M58WR064HL M58WR064HU VFBGA44
    Text: M58WR064HU M58WR064HL 64 Mbit 4Mb x16, Mux I/O, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • Supply voltage –VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2V for I/O Buffers – VPP = 12V for fast Program (9V tolerant)


    Original     		M58WR064HU M58WR064HL 66MHz CR10 CR14 M58WR064HL M58WR064HU VFBGA44 PDF

    F8000-FFFFF

    Abstract: No abstract text available
    Text: M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 16-, 32-, 64-Mbit x16, multiple bank, burst 1.8 V supply Flash memories Features „ Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 64-Mbit F8000-FFFFF PDF

    CR14

    Abstract: M58WR016KL M58WR016KU M58WR032KL M58WR032KU M58WR064KU VFBGA44 MS-328
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit CR14 M58WR032KU VFBGA44 MS-328 PDF

    M58WR032KT

    Abstract: M58WR032KB M58WR064KB M58WR016KT numonyx 106 ball 15H101 VFBGA56 M58WR064KT M58WR064K M58WR016KB
    Text: M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 16-, 32-, 64-Mbit x16, multiple bank, burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 64-Mbit M58WR064KB numonyx 106 ball 15H101 VFBGA56 M58WR064KT M58WR064K PDF

    unlock mobile phones codes

    Abstract: unlock mobile codes use of microprocessors in mobile phones M58W064 imei M58WR064 M58WR064EB M58WR064ET sim information 0.13Um ST
    Text: TA255 TECHNICAL ARTICLE M58WR064x : An Innovative Family of Flexible Flash Memories for Mobile Communications Marco Redaelli, Flash Memory Division, STMicroelectronics, Agrate, Italy Of all applications, mobile communication applications and in particular cellular phones consume


    Original     		TA255 M58WR064x unlock mobile phones codes unlock mobile codes use of microprocessors in mobile phones M58W064 imei M58WR064 M58WR064EB M58WR064ET sim information 0.13Um ST PDF

    VFBGA60

    Abstract: 7FF00
    Text: M58WR128ET M58WR128EB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		M58WR128ET M58WR128EB 54MHz 100ns VFBGA60 VFBGA60 7FF00 PDF

    M58WR064HB

    Abstract: A0-A21 CR10 M58WR064HT VFBGA56
    Text: M58WR064HT M58WR064HB 64 Mbit 4Mb x16, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • ■ Supply voltage – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		M58WR064HT M58WR064HB 66MHz M58WR064HB A0-A21 CR10 M58WR064HT VFBGA56 PDF

    ADQ14

    Abstract: M58WR032KU M58WRxxxKU
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL 16- or 32-Mbit x16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Data Brief Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers – VPP = 9 V for fast Program


    Original     		M58WR016KU M58WR016KL M58WR032KU M58WR032KL 32-Mbit M58WR016KL70ZA6E ADQ14 M58WRxxxKU PDF

    8811h

    Abstract: No abstract text available
    Text: M58WR064HT M58WR064HB M58WR032HT M58WR032HB 64 Mbit or 32 Mbit x16, Multiple Bank, Burst 1.8V supply Flash memories Features summary • ■ Supply voltage – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		M58WR064HT M58WR064HB M58WR032HT M58WR032HB 66MHz 8811h PDF

    M58WR064K

    Abstract: No abstract text available
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit M58WR032KU70ZA6U M58WR064K PDF

    CR10

    Abstract: J-STD-020B M58WR032FB M58WR032FT VFBGA56 JEDEC J-STD-020B
    Text: M58WR032FT M58WR032FB 32 Mbit 2Mb x16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		M58WR032FT M58WR032FB 66MHz CR10 J-STD-020B M58WR032FB M58WR032FT VFBGA56 JEDEC J-STD-020B PDF

    A0-A21

    Abstract: CR10 M58WR064HB M58WR064HT VFBGA56
    Text: M58WR064HT M58WR064HB 64 Mbit 4Mb x16, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • ■ Supply voltage – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		M58WR064HT M58WR064HB 66MHz A0-A21 CR10 M58WR064HB M58WR064HT VFBGA56 PDF

    M58WR064HUL

    Abstract: 04MAY2006
    Text: M58WR064HU M58WR064HL 64 Mbit 4Mb x16, Mux I/O, Multiple Bank, Burst 1.8V supply Flash memories Feature summary „ Supply voltage –VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O Buffers – VPP = 12 V for fast Program (9 V tolerant)


    Original     		M58WR064HU M58WR064HL M58WR064HUL 04MAY2006 PDF

    Untitled

    Abstract: No abstract text available
    Text: M58WR064HT M58WR064HB 64 Mbit 4 Mb x16, multiple bank, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2.24 V for I/O buffers – VPP = 12 V for fast program (optional)


    Original     		M58WR064HT M58WR064HB PDF

    Untitled

    Abstract: No abstract text available
    Text: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		M58WR064ET M58WR064EB 54MHz VFBGA56 PDF

    T8686

    Abstract: LE520
    Text: M58WR032FT M58WR032FB 32 Mbit 2Mb x16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		M58WR032FT M58WR032FB 66MHz T8686 LE520 PDF

    Untitled

    Abstract: No abstract text available
    Text: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		M58WR064ET M58WR064EB 54MHz VFBGA56 PDF

    AN1664

    Abstract: M58WR064EB M58WR064ET M58WR128EB M58WR128ET
    Text: AN1664 APPLICATION NOTE Software Drivers for the M58WR064E and M58WR128E Flash Memories CONTENTS • M58WR064E AND M58WR128E PROGRAMMING MODEL ■ HOW TO USE THE SOFTWARE DRIVER ■ SOFTWARE LIMITATIONS ■ CONCLUSION ■ REVISION HISTORY This application note describes how to use library source code


    Original     		AN1664 M58WR064E M58WR128E M58WR128E M58WR064ET, M58WR064EB, M58WR128ET M58WR128EB M58WR064ET AN1664 M58WR064EB PDF