transistor m33
Abstract: NEC TRANSISTOR MARKING CODE M33 TRANSISTOR NE851M33 NE851M33-T3 date code marking NEC
Text: DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold (M33) package
|
Original
|
PDF
|
NE851M33
NE851M33-T3
transistor m33
NEC TRANSISTOR MARKING CODE
M33 TRANSISTOR
NE851M33
NE851M33-T3
date code marking NEC
|
maximum gain s2p
Abstract: NE851M33 NE851M33-T3 NE851M33-T3-A MARKING CODE m33 M33 TRANSISTOR NEC MARKING CODE M33 marking
Text: DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold (M33, 0804 PKG) package
|
Original
|
PDF
|
NE851M33
NE851M33-A
NE851M33-T3
NE851M33-T3-A
maximum gain s2p
NE851M33
NE851M33-T3
NE851M33-T3-A
MARKING CODE m33
M33 TRANSISTOR
NEC MARKING CODE
M33 marking
|
M33 TRANSISTOR
Abstract: NEC TRANSISTOR MARKING CODE NE687M33 NE687M33-T3
Text: DATA SHEET NPN SILICON RF TRANSISTOR NE687M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-pin super lead-less minimold (M33) package
|
Original
|
PDF
|
NE687M33
NE687M33-T3
M33 TRANSISTOR
NEC TRANSISTOR MARKING CODE
NE687M33
NE687M33-T3
|
M33 TRANSISTOR
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION
|
Original
|
PDF
|
NESG2107M33
NESG2107M33
NESG2107M33-T3
M33 TRANSISTOR
|
NESG2107M33
Abstract: NESG2107M33-A NESG2107M33-T3-A
Text: PRELIMINARY DATA SHEET NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION
|
Original
|
PDF
|
NESG2107M33
NESG2107M33-A
NESG2107M33-T3-A
NESG2107M33
NESG2107M33-A
NESG2107M33-T3-A
|
NESG2107M33
Abstract: NESG2107M33-A NESG2107M33-T3-A A720A
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2107M33 NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification
|
Original
|
PDF
|
NESG2107M33
NESG2107M33-T3
NESG2107M33-A
NESG2107M33-T3-A
NESG2107M33
NESG2107M33-A
NESG2107M33-T3-A
A720A
|
NE851M33
Abstract: NE851M33-T3-A
Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE851M33 FEATURES • LOW PHASE DISTORTION, LOW VOLTAGE OPERATION • IDEAL FOR OSC APPLICATIONS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE851M33-A 50 pcs (Non reel)
|
Original
|
PDF
|
NE851M33
NE851M33-A
NE851M33-T3-A
NE851M33
NE851M33-T3-A
|
M33 TRANSISTOR
Abstract: marking E7 NE851M33 NE851M33-T3 360 U
Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE851M33 FEATURES • LOW PHASE DISTORTION, LOW VOLTAGE OPERATION • IDEAL FOR OSC APPLICATIONS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE851M33 50 pcs (Non reel)
|
Original
|
PDF
|
NE851M33
NE851M33-T3
M33 TRANSISTOR
marking E7
NE851M33
NE851M33-T3
360 U
|
M33 nec
Abstract: M33 TRANSISTOR NESG2046M33 marking T7
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification
|
Original
|
PDF
|
NESG2046M33
NESG2046M33-T3
M33 nec
M33 TRANSISTOR
NESG2046M33
marking T7
|
M33 TRANSISTOR
Abstract: transistor m33 MARKING W2 NE687M33 NE687M33-T3
Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE687M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE687M33 50 pcs (Non reel)
|
Original
|
PDF
|
NE687M33
NE687M33-T3
M33 TRANSISTOR
transistor m33
MARKING W2
NE687M33
NE687M33-T3
|
NE687M33
Abstract: NE687M33-A NE687M33-T3-A MARKING CODE m33
Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE687M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE687M33-A 50 pcs (Non reel)
|
Original
|
PDF
|
NE687M33
NE687M33-A
NE687M33-T3-A
NE687M33
NE687M33-A
NE687M33-T3-A
MARKING CODE m33
|
NE685M33
Abstract: NE685M33-T3
Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE685M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • INSERTION POWER GAIN: |S21e|2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION
|
Original
|
PDF
|
NE685M33
NE685M33-T3
NE685M33
NE685M33-T3
|
NE685M33-T3-A
Abstract: NE685M33 NE685M33-A
Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE685M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • INSERTION POWER GAIN: |S21e|2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION
|
Original
|
PDF
|
NE685M33
NE685M33-A
NE685M33-T3-A
NE685M33-T3-A
NE685M33
NE685M33-A
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
|
Original
|
PDF
|
NESG2046M33
NESG2046M33
NESG2046M33-T3
NESG2046M33-A
NESG2046M33-T3-A
|
|
Philips MARKING CODE
Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
Text: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked
|
Original
|
PDF
|
OT143,
OT323,
OT343,
OT363,
OD110,
OD323
OD523
BF992
PMBF4416A
BF510
Philips MARKING CODE
Datasheets for BB132 varicap
marking code W1
BAT18 A2p
sot143 marking code A5
Marking codes
sot143 marking code A3
marking A5 sot363
marking W1
S13 SOT363
|
Untitled
Abstract: No abstract text available
Text: VHF/UHF Transistors NPN Silicon 3 COLLECTOR MMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc CASE 318–08, STYLE 6
|
Original
|
PDF
|
MMBTH10LT1
236AB)
1000MHz
|
mmbth10
Abstract: MMBTH10LT1 M33 thermal marking M33 RB marking
Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors NPN Silicon 3 COLLECTOR MMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0
|
Original
|
PDF
|
MMBTH10LT1
236AB)
1000MHz
mmbth10
MMBTH10LT1
M33 thermal
marking M33
RB marking
|
BSS83 M74
Abstract: bf992 m92 bf998 Mop marking M29 M74 marking BF511 BF909RM29 marking nb transistor M3P BFT46
Text: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes Small-signal field-effect transistors 1997 Dec 05 Supersedes data of 1995 Apr 12 File under Discrete Semiconductors, SC07 Philips Semiconductors Small-signal field-effect transistors Marking codes Types in SOT23, SOT89, SOT143 and SOT343 packages are marked with a code as listed in the following table.
|
Original
|
PDF
|
OT143
OT343
BF510
BF991
PMBF4391
BF511
BF992
PMBF4392
BF512
BF992R
BSS83 M74
bf992 m92
bf998 Mop
marking M29
M74 marking
BF511
BF909RM29
marking nb
transistor M3P
BFT46
|
SESI 91
Abstract: Sn90Pb10 202P1 32WR smd m34 22wr M21 SMD 47-UH Microspire 03x221
Text: 33 • • • • • • • Energy storage, smoothing, filtering Applied standards : ECSS-Q-70-02 , MIL-STD-202 , DO-160 Materials meet UL94-V0 rating Suited for IR and vapor reflow soldering Frequency range up to 1 MHz Operating temperature range : - 55 °C to + 125 °C
|
Original
|
PDF
|
ECSS-Q-70-02
MIL-STD-202
DO-160
UL94-V0
SESI 91
Sn90Pb10
202P1
32WR
smd m34
22wr
M21 SMD
47-UH
Microspire
03x221
|
SMD INDUCTOR marking code UM
Abstract: smd marking code M12 smd m21 SMD INDUCTOR Marking Code SESI 91 M21 SMD Microspire SESI 15 M33 1WR SESI 9 15K 2WR SESI 15 SR
Text: 35 • • • • • • • Electrical Data 25°C Energy storage, smoothing, filtering Applied standards : ECSS-Q-70-02 , MIL-STD-202 , DO-160 Materials meet UL94-V0 rating Suited for IR and vapor reflow soldering Frequency range up to 1 MHz Operating temperature range : - 55 °C to + 125 °C
|
Original
|
PDF
|
ECSS-Q-70-02
MIL-STD-202
DO-160
UL94-V0
SMD INDUCTOR marking code UM
smd marking code M12
smd m21
SMD INDUCTOR Marking Code
SESI 91
M21 SMD
Microspire
SESI 15 M33 1WR
SESI 9 15K 2WR
SESI 15 SR
|
M33 TRANSISTOR
Abstract: NESG2046M33-A NESG2046M33 NESG2046M33-T3-A transistor m33
Text: PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG2046M33 FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • HIGH BREAKDOWN VOLTAGE TECHNOLOGY
|
Original
|
PDF
|
NESG2046M33
NESG2046M33-A
NESG2046M33-T3-A
M33 TRANSISTOR
NESG2046M33-A
NESG2046M33
NESG2046M33-T3-A
transistor m33
|
M74 marking
Abstract: MARKING m3p marking code NB SOT23 m2p SOT23 m33 sot23 MARKING CODE m33 marking Code philips BSR58 marking M33 BF1109
Text: Philips Semiconductors Small-signal fteld-effect transistors Marking codes Types in SOT23, SOT89, SOT143 and SOT343 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE MARKING CODE TYPE NUMBER TYPE NUMBER MARKING CODE
|
OCR Scan
|
PDF
|
OT143
OT343
BF510
BF511
BF512
BF513
BF545A
BF545B
BF545C
BF556A
M74 marking
MARKING m3p
marking code NB SOT23
m2p SOT23
m33 sot23
MARKING CODE m33
marking Code philips
BSR58
marking M33
BF1109
|
sot23 marking M6p
Abstract: PMBFJ111 PMBFJ174
Text: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER
|
OCR Scan
|
PDF
|
OT143
OT343
BF510
BF994S
BST120
BF511
BF996S
BST122
BF512
BF997
sot23 marking M6p
PMBFJ111
PMBFJ174
|
Untitled
Abstract: No abstract text available
Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.48 0.38 i 13 . •-■!— ! Pin configuration 1 • 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _K02 0.60 0.40 0.89* 2.00
|
OCR Scan
|
PDF
|
CMBT4403
23A33T4
|