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    M33 MARKING Search Results

    M33 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    M33 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor m33

    Abstract: NEC TRANSISTOR MARKING CODE M33 TRANSISTOR NE851M33 NE851M33-T3 date code marking NEC
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold (M33) package


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    PDF NE851M33 NE851M33-T3 transistor m33 NEC TRANSISTOR MARKING CODE M33 TRANSISTOR NE851M33 NE851M33-T3 date code marking NEC

    maximum gain s2p

    Abstract: NE851M33 NE851M33-T3 NE851M33-T3-A MARKING CODE m33 M33 TRANSISTOR NEC MARKING CODE M33 marking
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold (M33, 0804 PKG) package


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    PDF NE851M33 NE851M33-A NE851M33-T3 NE851M33-T3-A maximum gain s2p NE851M33 NE851M33-T3 NE851M33-T3-A MARKING CODE m33 M33 TRANSISTOR NEC MARKING CODE M33 marking

    M33 TRANSISTOR

    Abstract: NEC TRANSISTOR MARKING CODE NE687M33 NE687M33-T3
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE687M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-pin super lead-less minimold (M33) package


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    PDF NE687M33 NE687M33-T3 M33 TRANSISTOR NEC TRANSISTOR MARKING CODE NE687M33 NE687M33-T3

    M33 TRANSISTOR

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION


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    PDF NESG2107M33 NESG2107M33 NESG2107M33-T3 M33 TRANSISTOR

    NESG2107M33

    Abstract: NESG2107M33-A NESG2107M33-T3-A
    Text: PRELIMINARY DATA SHEET NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION


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    PDF NESG2107M33 NESG2107M33-A NESG2107M33-T3-A NESG2107M33 NESG2107M33-A NESG2107M33-T3-A

    NESG2107M33

    Abstract: NESG2107M33-A NESG2107M33-T3-A A720A
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2107M33 NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification


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    PDF NESG2107M33 NESG2107M33-T3 NESG2107M33-A NESG2107M33-T3-A NESG2107M33 NESG2107M33-A NESG2107M33-T3-A A720A

    NE851M33

    Abstract: NE851M33-T3-A
    Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE851M33 FEATURES • LOW PHASE DISTORTION, LOW VOLTAGE OPERATION • IDEAL FOR OSC APPLICATIONS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE851M33-A 50 pcs (Non reel)


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    PDF NE851M33 NE851M33-A NE851M33-T3-A NE851M33 NE851M33-T3-A

    M33 TRANSISTOR

    Abstract: marking E7 NE851M33 NE851M33-T3 360 U
    Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE851M33 FEATURES • LOW PHASE DISTORTION, LOW VOLTAGE OPERATION • IDEAL FOR OSC APPLICATIONS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE851M33 50 pcs (Non reel)


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    PDF NE851M33 NE851M33-T3 M33 TRANSISTOR marking E7 NE851M33 NE851M33-T3 360 U

    M33 nec

    Abstract: M33 TRANSISTOR NESG2046M33 marking T7
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification


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    PDF NESG2046M33 NESG2046M33-T3 M33 nec M33 TRANSISTOR NESG2046M33 marking T7

    M33 TRANSISTOR

    Abstract: transistor m33 MARKING W2 NE687M33 NE687M33-T3
    Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE687M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE687M33 50 pcs (Non reel)


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    PDF NE687M33 NE687M33-T3 M33 TRANSISTOR transistor m33 MARKING W2 NE687M33 NE687M33-T3

    NE687M33

    Abstract: NE687M33-A NE687M33-T3-A MARKING CODE m33
    Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE687M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE687M33-A 50 pcs (Non reel)


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    PDF NE687M33 NE687M33-A NE687M33-T3-A NE687M33 NE687M33-A NE687M33-T3-A MARKING CODE m33

    NE685M33

    Abstract: NE685M33-T3
    Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE685M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • INSERTION POWER GAIN: |S21e|2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION


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    PDF NE685M33 NE685M33-T3 NE685M33 NE685M33-T3

    NE685M33-T3-A

    Abstract: NE685M33 NE685M33-A
    Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE685M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • INSERTION POWER GAIN: |S21e|2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION


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    PDF NE685M33 NE685M33-A NE685M33-T3-A NE685M33-T3-A NE685M33 NE685M33-A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


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    PDF NESG2046M33 NESG2046M33 NESG2046M33-T3 NESG2046M33-A NESG2046M33-T3-A

    Philips MARKING CODE

    Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
    Text: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked


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    PDF OT143, OT323, OT343, OT363, OD110, OD323 OD523 BF992 PMBF4416A BF510 Philips MARKING CODE Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363

    Untitled

    Abstract: No abstract text available
    Text: VHF/UHF Transistors NPN Silicon 3 COLLECTOR MMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc CASE 318–08, STYLE 6


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    PDF MMBTH10LT1 236AB) 1000MHz

    mmbth10

    Abstract: MMBTH10LT1 M33 thermal marking M33 RB marking
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors NPN Silicon 3 COLLECTOR MMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0


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    PDF MMBTH10LT1 236AB) 1000MHz mmbth10 MMBTH10LT1 M33 thermal marking M33 RB marking

    BSS83 M74

    Abstract: bf992 m92 bf998 Mop marking M29 M74 marking BF511 BF909RM29 marking nb transistor M3P BFT46
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes Small-signal field-effect transistors 1997 Dec 05 Supersedes data of 1995 Apr 12 File under Discrete Semiconductors, SC07 Philips Semiconductors Small-signal field-effect transistors Marking codes Types in SOT23, SOT89, SOT143 and SOT343 packages are marked with a code as listed in the following table.


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    PDF OT143 OT343 BF510 BF991 PMBF4391 BF511 BF992 PMBF4392 BF512 BF992R BSS83 M74 bf992 m92 bf998 Mop marking M29 M74 marking BF511 BF909RM29 marking nb transistor M3P BFT46

    SESI 91

    Abstract: Sn90Pb10 202P1 32WR smd m34 22wr M21 SMD 47-UH Microspire 03x221
    Text: 33 • • • • • • • Energy storage, smoothing, filtering Applied standards : ECSS-Q-70-02 , MIL-STD-202 , DO-160 Materials meet UL94-V0 rating Suited for IR and vapor reflow soldering Frequency range up to 1 MHz Operating temperature range : - 55 °C to + 125 °C


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    PDF ECSS-Q-70-02 MIL-STD-202 DO-160 UL94-V0 SESI 91 Sn90Pb10 202P1 32WR smd m34 22wr M21 SMD 47-UH Microspire 03x221

    SMD INDUCTOR marking code UM

    Abstract: smd marking code M12 smd m21 SMD INDUCTOR Marking Code SESI 91 M21 SMD Microspire SESI 15 M33 1WR SESI 9 15K 2WR SESI 15 SR
    Text: 35 • • • • • • • Electrical Data 25°C Energy storage, smoothing, filtering Applied standards : ECSS-Q-70-02 , MIL-STD-202 , DO-160 Materials meet UL94-V0 rating Suited for IR and vapor reflow soldering Frequency range up to 1 MHz Operating temperature range : - 55 °C to + 125 °C


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    PDF ECSS-Q-70-02 MIL-STD-202 DO-160 UL94-V0 SMD INDUCTOR marking code UM smd marking code M12 smd m21 SMD INDUCTOR Marking Code SESI 91 M21 SMD Microspire SESI 15 M33 1WR SESI 9 15K 2WR SESI 15 SR

    M33 TRANSISTOR

    Abstract: NESG2046M33-A NESG2046M33 NESG2046M33-T3-A transistor m33
    Text: PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG2046M33 FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • HIGH BREAKDOWN VOLTAGE TECHNOLOGY


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    PDF NESG2046M33 NESG2046M33-A NESG2046M33-T3-A M33 TRANSISTOR NESG2046M33-A NESG2046M33 NESG2046M33-T3-A transistor m33

    M74 marking

    Abstract: MARKING m3p marking code NB SOT23 m2p SOT23 m33 sot23 MARKING CODE m33 marking Code philips BSR58 marking M33 BF1109
    Text: Philips Semiconductors Small-signal fteld-effect transistors Marking codes Types in SOT23, SOT89, SOT143 and SOT343 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE MARKING CODE TYPE NUMBER TYPE NUMBER MARKING CODE


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    PDF OT143 OT343 BF510 BF511 BF512 BF513 BF545A BF545B BF545C BF556A M74 marking MARKING m3p marking code NB SOT23 m2p SOT23 m33 sot23 MARKING CODE m33 marking Code philips BSR58 marking M33 BF1109

    sot23 marking M6p

    Abstract: PMBFJ111 PMBFJ174
    Text: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER


    OCR Scan
    PDF OT143 OT343 BF510 BF994S BST120 BF511 BF996S BST122 BF512 BF997 sot23 marking M6p PMBFJ111 PMBFJ174

    Untitled

    Abstract: No abstract text available
    Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.48 0.38 i 13 . •-■!— ! Pin configuration 1 • 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _K02 0.60 0.40 0.89* 2.00


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    PDF CMBT4403 23A33T4