Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    M28V841 Search Results

    M28V841 Datasheets (54)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M28V841-100M1 STMicroelectronics LOW VOLTAGE 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY Scan PDF
    M28V841-100M1R STMicroelectronics LOW VOLTAGE 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY Scan PDF
    M28V841-100M1TR STMicroelectronics LOW VOLTAGE 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY Scan PDF
    M28V841-100M3 STMicroelectronics LOW VOLTAGE 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY Scan PDF
    M28V841-100M3R STMicroelectronics LOW VOLTAGE 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY Scan PDF
    M28V841-100M3TR STMicroelectronics LOW VOLTAGE 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY Scan PDF
    M28V841-100M6 STMicroelectronics LOW VOLTAGE 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY Scan PDF
    M28V841-100M6R STMicroelectronics LOW VOLTAGE 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY Scan PDF
    M28V841-100M6TR STMicroelectronics LOW VOLTAGE 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY Scan PDF
    M28V841-100N1 STMicroelectronics LOW VOLTAGE 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY Scan PDF
    M28V841-100N1R STMicroelectronics LOW VOLTAGE 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY Scan PDF
    M28V841-100N1TR STMicroelectronics LOW VOLTAGE 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY Scan PDF
    M28V841-100N3 STMicroelectronics LOW VOLTAGE 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY Scan PDF
    M28V841-100N3R STMicroelectronics LOW VOLTAGE 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY Scan PDF
    M28V841-100N3TR STMicroelectronics LOW VOLTAGE 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY Scan PDF
    M28V841-100N6 STMicroelectronics LOW VOLTAGE 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY Scan PDF
    M28V841-100N6R STMicroelectronics LOW VOLTAGE 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY Scan PDF
    M28V841-100N6TR STMicroelectronics LOW VOLTAGE 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY Scan PDF
    M28V841-120M1 STMicroelectronics LOW VOLTAGE 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY Scan PDF
    M28V841-120M1R STMicroelectronics LOW VOLTAGE 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY Scan PDF

    M28V841 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    footprint so44

    Abstract: No abstract text available
    Text: M28V841 LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and SO44 MEMORY ERASE in SECTORS – 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 10,000 PROGRAM/ERASE CYCLES per


    Original
    M28V841 TSOP40 100ns TSOP40 footprint so44 PDF

    Untitled

    Abstract: No abstract text available
    Text: M28V841 LOW VOLTAGE 8 Megabit 1 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW SMALL SIZE PLASTIC PACKAGES TSOP40 and SO44 MEMORY ERASE in SECTORS – 16 Sectors of 64K Bytes each 3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 100,000 PROGRAM/ERASE CYCLES per


    Original
    M28V841 TSOP40 100ns PDF

    footprint so44

    Abstract: No abstract text available
    Text: M28V841 LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY DATA BRIEFING SMALL SIZE PLASTIC PACKAGES TSOP40 and SO44 MEMORY ERASE in SECTORS – 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 10,000 PROGRAM/ERASE CYCLES per


    Original
    M28V841 TSOP40 100ns TSOP40 M28V841 AI01496 100ns AI01498 footprint so44 PDF

    asm eagle

    Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
    Text: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:


    Original
    BRMEMSEL/0997 asm eagle M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860 PDF

    Untitled

    Abstract: No abstract text available
    Text: M28V161 LOW VOLTAGE 16 Megabit 2 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW SMALL SIZE PLASTIC PACKAGES TSOP48 and SO44 MEMORY ERASE in SECTORS – 32 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 100,000 PROGRAM/ERASE CYCLES per


    Original
    M28V161 TSOP48 100ns PDF

    TSOP48 footprint

    Abstract: footprint so44 A12E
    Text: M28V161 LOW VOLTAGE 16 Megabit 2 Meg x 8, Sector Erase FLASH MEMORY DATA BRIEFING MEMORY ERASE in SECTORS – 32 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 100,000 PROGRAM/ERASE CYCLES per SECTOR PROGRAM/ERASE CONTROLLER


    Original
    M28V161 100ns TSOP48 M28V161 AI01140B 120ns 150ns TSOP48 footprint footprint so44 A12E PDF

    256k x8 SRAM 5V

    Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
    Text: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)


    Original
    M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 256k x8 SRAM 5V ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09 PDF

    M93C46BN1

    Abstract: PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 M2716-1F1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7
    Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV EPROM - NMOS Size Part Number Organis. Speed ns VCC Range ICC / Stby Temperature Range (°C) Package 16K M2716-1F1 x8 350 5V ± 10% 100mA/25mA 0 to 70 FDIP24W 16K M2716-1F6 x8 350 5V ± 10% 100mA/25mA


    Original
    M2716-1F1 M2716-1F6 M2716F1 M2716F6 M2732A-2F1 M2732AF1 M2732AF6 M2732A-3F1 M2764A-1F1 M2764A-20F1 M93C46BN1 PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7 PDF

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


    Original
    64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP PDF

    XX20H

    Abstract: I01498 A19D A13D
    Text: SGS-THOMSON M28V841 LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY PR ELIM IN A R Y DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and S 0 4 4 MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE


    OCR Scan
    M28V841 TSOP40 100ns XX20H I01498 A19D A13D PDF

    IA15

    Abstract: No abstract text available
    Text: G 7. SGS-1H 0 MS 0 N M28V841 HQÊISOIlLiÊratôIRiOlgS LOW VOLTAGE 8 Megabit 1 Meg x 8, Sector Erase FLASH M EM O RY PRODUCT PREVIEW • SMALL SIZE PLASTIC PACKAGES TSCJP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 3V ± 0.3V SUPPLY VOLTAGE


    OCR Scan
    M28V841 TSCJP40 100ns TSOP40 x20mm IA15 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON M28V841 l ll lM J i lL li M W I i e i LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE


    OCR Scan
    M28V841 TSOP40 100ns PDF

    Untitled

    Abstract: No abstract text available
    Text: 5 7 . S G S -T H O M S O N [fflM iH iM M B g S M28V841 LOW VOLTAGE 8 Megabit 1 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW • SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 3V ± 0.3V SUPPLY VOLTAGE


    OCR Scan
    M28V841 TSOP40 100ns 7T2T237 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5 7 . SGS-1H0MS0N M28F841 M28V841 m CMOS 8 Megabit 1 Meg x 8,16 x 64K Sector Erase _ FLASH MEMORY ABBREVIATED DATA SMALL SIZE TSOP40 and S044 PLASTIC PACKAGES - Normal and Reverse Pinout for TSOP ver­ sions MEMORY ERASE in SECTORS, 16 x 64K


    OCR Scan
    M28F841 M28V841 TSOP40 M28V841 85-120ns 200ns PDF

    MK45H14

    Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
    Text: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .


    OCR Scan
    M27C64A M27C256B M87C257 M27C512 M27V512 M27C1001 M27V101 M27C1024 M27C2001 M27V201 MK45H14 AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA PDF

    CDQ4

    Abstract: No abstract text available
    Text: 57. SGS-THOMSON M28V161 \u LOW VOLTAGE 16 Megabit 2 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 MEMORY ERASE in SECTORS - 32 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE


    OCR Scan
    M28V161 TSOP48 100ns TSOP48 A0-A20 CDQ4 PDF

    V8-41

    Abstract: No abstract text available
    Text: M28F841 M28V341 SGS-1H0MS0N m CMOS 8 Megabit 1 Meg x 8, 16 x 64K Sector Erase FLASH MEMORY ADVANCE DATA SMALL SIZE TSOP40 and S 0 4 4 PLASTIC PACKAGES - Normal and Reverse Pinout for TSOP ver­ sions M EMORY ERASE in SECTORS, 16 x 64K SUPPLY VOLTAGE in READ OPERATION


    OCR Scan
    M28F841 M28V341 TSOP40 M28V841 85-120ns 200ns V8-41 PDF

    MK48T87B24

    Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
    Text: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W


    OCR Scan
    M27C64A-15F1 M27C64A-20F1 M27C64A-25F1 M27C64A-30F1 M27C64A-20F6 M27C64A-25F6 M27C64A-30F6 ST16601 ST16F48 ST16SF48 MK48T87B24 ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR PDF