M28V421 Search Results

M28V421 Datasheets (11)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
M28V421		STMicroelectronics	LOW VOLTAGE 4 Megabit (x 8, Block Erase) FLASH MEMORY		Original	PDF
M28V421-120N1		SGS-Thomson	EEPROM Parallel Async		Original	PDF
M28V421-120N3		SGS-Thomson	EEPROM Parallel Async		Original	PDF
M28V421-120N5		SGS-Thomson	EEPROM Parallel Async		Original	PDF
M28V421-120N6		SGS-Thomson	EEPROM Parallel Async		Original	PDF
M28V421-150N1		SGS-Thomson	EEPROM Parallel Async		Original	PDF
M28V421-150N1R		SGS-Thomson	EEPROM Parallel Async		Original	PDF
M28V421-150N3		SGS-Thomson	EEPROM Parallel Async		Original	PDF
M28V421-150N5		SGS-Thomson	EEPROM Parallel Async		Original	PDF
M28V421-150N6		SGS-Thomson	EEPROM Parallel Async		Original	PDF
M28V421-150N6R		SGS-Thomson	EEPROM Parallel Async		Original	PDF

M28V421 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
M28V411 Abstract: M28V421 Text: M28V411 M28V421 LOW VOLTAGE 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks	Original	M28V411 M28V421 TSOP40 120ns M28V41patent M28V411 M28V421	PDF
Untitled Abstract: No abstract text available Text: M28V411 M28V421 LOW VOLTAGE 4 Megabit x 8, Block Erase FLASH MEMORY DATA BRIEFING MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks – One 96K Byte Main Block	Original	M28V411 M28V421 120ns TSOP40 M28V421 AI01406	PDF
256k x8 SRAM 5V Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09 Text: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)	Original	M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 256k x8 SRAM 5V ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09	PDF
Untitled Abstract: No abstract text available Text: rZ J M28V411 M28V421 S G S -T H O M S O N LOW VOLTAGE 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo cation) with hardware write and erase pro	OCR Scan	M28V411 M28V421 TSOP40 120ns	PDF
TDA0161 equivalent Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:	OCR Scan		PDF
MK45H14 Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA Text: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .	OCR Scan	M27C64A M27C256B M87C257 M27C512 M27V512 M27C1001 M27V101 M27C1024 M27C2001 M27V201 MK45H14 AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA	PDF
Untitled Abstract: No abstract text available Text: M 28V411 M 28V421 SGS-THOMSON ^ 7 # . IH [MillLI©lS©H gS LOW VOLTAGE 4 Megabit (x 8, Block Erase FLASH MEMORY PRELIMINARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo cation) with hardware write and erase pro	OCR Scan	28V411 28V421 TSOP40 55nATypical 120ns	PDF