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    M28F101 Price and Stock

    STMicroelectronics M28F101-150K6

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    Bristol Electronics M28F101-150K6 2,520
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    SGS Semiconductor Ltd M28F101-150K1

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    Bristol Electronics M28F101-150K1 500
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    STMicroelectronics M28F101-150K1TR

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    Bristol Electronics M28F101-150K1TR 500
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    STMicroelectronics M28F101-150K1

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    Bristol Electronics M28F101-150K1 452
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    Quest Components M28F101-150K1 1,708
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    STMicroelectronics M28F101-120K1

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    Bristol Electronics M28F101-120K1 414
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    M28F101-120K1 81
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    ComSIT USA M28F101-120K1 4,174
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    M28F101 Datasheets (142)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M28F101 STMicroelectronics 1 Mbit (128Kb x8, Bulk) Flash Memory Original PDF
    M28F101 STMicroelectronics 1 MEGABIT -128K x 8, CHIP ERASE- FLASH MEMORY Original PDF
    M28F101 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    M28F101-100K1 STMicroelectronics 1 Mb 128K x 8, Chip Erase FLASH MEMORY Original PDF
    M28F101-100K3 STMicroelectronics 1 Mb 128K x 8, Chip Erase FLASH MEMORY Original PDF
    M28F101-100K6 STMicroelectronics 1 Mb 128K x 8, Chip Erase FLASH MEMORY Original PDF
    M28F101-100N1 STMicroelectronics 1 Mb 128K x 8, Chip Erase FLASH MEMORY Original PDF
    M28F101-100N1R SGS-Thomson EEPROM Parallel Async Original PDF
    M28F101-100N3 STMicroelectronics 1 Mb 128K x 8, Chip Erase FLASH MEMORY Original PDF
    M28F101-100N3R SGS-Thomson EEPROM Parallel Async Original PDF
    M28F101-100N6 STMicroelectronics 1 Mb 128K x 8, Chip Erase FLASH MEMORY Original PDF
    M28F101-100N6R SGS-Thomson EEPROM Parallel Async Original PDF
    M28F101-100P1 STMicroelectronics 1 Mb 128K x 8, Chip Erase FLASH MEMORY Original PDF
    M28F101-100P3 STMicroelectronics 1 Mb 128K x 8, Chip Erase FLASH MEMORY Original PDF
    M28F101-100P6 STMicroelectronics 1 Mb 128K x 8, Chip Erase FLASH MEMORY Original PDF
    M28F101-100XK1 STMicroelectronics 1 Mb 128K x 8, Chip Erase FLASH MEMORY Original PDF
    M28F101-100XK3 STMicroelectronics 1 Mb 128K x 8, Chip Erase FLASH MEMORY Original PDF
    M28F101-100XK6 STMicroelectronics 1 Mb 128K x 8, Chip Erase FLASH MEMORY Original PDF
    M28F101-100XN1 STMicroelectronics 1 Mb 128K x 8, Chip Erase FLASH MEMORY Original PDF
    M28F101-100XN3 STMicroelectronics 1 Mb 128K x 8, Chip Erase FLASH MEMORY Original PDF
    ...

    M28F101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M28F101

    Abstract: PDIP32 PLCC32 TSOP32
    Text: M28F101 1 Mbit 128Kb x8, Bulk Flash Memory 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES


    Original     		PDF M28F101 128Kb M28F101 PDIP32 PLCC32 TSOP32

    plcc32 pinout

    Abstract: M28F101 PDIP32 PLCC32 TSOP32
    Text: M28F101 1 Mb 128K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max


    Original     		PDF M28F101 PLCC32 PDIP32 TSOP32 M28F101 AI00668 plcc32 pinout PDIP32 PLCC32 TSOP32

    M28F101

    Abstract: PLCC32 QR104
    Text: QUALIFICATION REPORT M28F101 1 Megabit 128K x 8 CMOS T5-U20 FLASH MEMORY in PLCC32 INTRODUCTION The M28F101 is a 1 Megabit FLASH Memory organised as 128K x 8 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5-U20 (-20% upgrade) process which has been especially


    Original     		PDF M28F101 T5-U20 PLCC32 T5-U20 100ns PLCC32 QR104

    M28F101

    Abstract: PDIP32 PLCC32 TSOP32
    Text: M28F101 1 Megabit 128K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE


    Original     		PDF M28F101 PLCC32 PDIP32 TSOP32 M28F101 PDIP32 PLCC32 TSOP32

    M28F101

    Abstract: PDIP32 PLCC32 TSOP32 SRAM 10ns
    Text: M28F101 1 Mb 128K x 8, Chip Erase FLASH MEMORY 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max 10,000 ERASE/PROGRAM CYCLES


    Original     		PDF M28F101 M28F101 PDIP32 PLCC32 TSOP32 SRAM 10ns

    plcc32 pinout

    Abstract: M28F101 PLCC32 TSOP32 TSOP32 Package PDIP32
    Text: M28F101 1 Mbit 128Kb x8, Bulk Flash Memory DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical


    Original     		PDF M28F101 128Kb PLCC32 PDIP32 TSOP32 M28F101 plcc32 pinout PLCC32 TSOP32 TSOP32 Package PDIP32

    M28F101

    Abstract: PDIP32 PLCC32 TSOP32
    Text: M28F101 1 Mbit 128Kb x8, Bulk Erase Flash Memory 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES


    Original     		PDF M28F101 128Kb M28F101 PDIP32 PLCC32 TSOP32

    M28F101

    Abstract: TSOP32 Package TSOP32 QR102 NOR Flash Qualification
    Text: QUALIFICATION REPORT M28F101 1 Megabit CMOS/T5 FLASH MEMORY in TSOP32 INTRODUCTION The M28F101 is a 1 Megabit FLASH MEMORY organised as 128K x 8 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5 process which has been especially developed for flash memory products. The memory features a fast 100ns access time, very low


    Original     		PDF M28F101 TSOP32 M28F101 100ns TSOP32 Package TSOP32 QR102 NOR Flash Qualification

    M28F101

    Abstract: PDIP32 PLCC32 TSOP32
    Text: M28F101 1 Megabit 128K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE


    Original     		PDF M28F101 PLCC32 PDIP32 TSOP32 M28F101 PDIP32 PLCC32 TSOP32

    TSOP32 FOOTPRINT

    Abstract: M28F101 M29F010B
    Text: AN1251 APPLICATION NOTE Replacing the M28F256, M28F512 and M28F101 with the M29F512B and M29F010B Flash Memories CONTENTS • INTRODUCTION ■ HARDWARE COMPATIBILITY ■ SOFTWARE UPGRADE ■ OTHER CONSIDERATIONS ■ CONCLUSION INTRODUCTION This application note will help you to replace the M28F256,


    Original     		PDF AN1251 M28F256, M28F512 M28F101 M29F512B M29F010B TSOP32 FOOTPRINT

    M28F101

    Abstract: No abstract text available
    Text: M28F101 1 Megabit 128K x 8, Chip Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE


    Original     		PDF M28F101 PDIP32 PLCC32 TSOP32 M28F101 100ns 120ns 150ns 200ns

    CDIP32

    Abstract: M28F101 PLCC32 QRFL9811
    Text: QRFL9811 QUALIFICATION REPORT M28F101 T5-U35: 1 Mbit x8 Dual Supply Flash Memory INTRODUCTION The M28F101 is a 1 Mbit Dual Supply (5V/12V) Flash memory organized as 128 KByte of 8 bits each. It is offered in PLCC32 packages. The M28F101 is manufactured with the STMicroelectronics advanced CMOS 0.8 micron T5-U35 (-35%


    Original     		PDF QRFL9811 M28F101 T5-U35: V/12V) PLCC32 T5-U35 PLCC32. CDIP32 QRFL9811

    M28F101

    Abstract: PLCC32 package PLCC32
    Text: QUALIFICATION REPORT M28F101 1 Megabit CMOS/T5 FLASH MEMORY in PLCC32 INTRODUCTION The M28F101 is a 1 Megabit FLASH MEMORY organised as 128K x 8 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5 process which has been especially developed for flash memory products. The memory features a fast 100ns access time, very low


    Original     		PDF M28F101 PLCC32 M28F101 100ns PLCC32 package PLCC32

    M28F101

    Abstract: PDIP32 PLCC32
    Text: SGS-THOMSON ^ 7 # M28F101 M g ^ ( 5 i[L i( g T M 5 M ( g S CMOS 1 Megabit (128K x 8) FLASH MEMORY ADVANCE DATA • FAST ACCESS TIM E: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMM ING VOLTAGE


    OCR Scan     		PDF M28F101 100ns PDIP32 PLCC32 PTS032 M28F101 PDIP32 PLCC32

    28F101

    Abstract: 013d01 M28F101
    Text: / = T SCS-THOMSON ^ 7 # ll ra®[l[L[iOT®R!lD i M28F101 1 Mb (128K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING • ■ ■ ■ ■ ■ ■ ■ ■ - 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10|iS typical


    OCR Scan     		PDF M28F101 PDIP32 PLCC32 M28F101 ar28F101 PDIP32 PLCC32 28F101 013d01

    30a124

    Abstract: No abstract text available
    Text: r= 7 S G S -T H O M S O N *7 M « liüilDIgMilLiÊTnMaDÊg M 28 F101B M28V 101B CMOS 1 Megabit 128K x 8, Chip Erase FLASH MEMORY ABBREVIATED DATA • FAST ACCESS TIMES - 60ns for M28F101B version - 150ns for M28V101B version ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max


    OCR Scan     		PDF M28F101B 150ns M28V101B M28F101B, M2BF101E M28V101E VA01125 30a124

    M28F101

    Abstract: PDIP32 PLCC32 TSOP32 0625E-1
    Text: SGS-TtiOMSON M28F101 G fflD S Î3 (m i(g T ïïM M (g i 1 Megabit (128K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 70ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10^is


    OCR Scan     		PDF M28F101 PDIP32 PLCC32 TSOP32 M28F101 TSOP32 PDIP32 PLCC32 0625E-1

    Untitled

    Abstract: No abstract text available
    Text: 52E D 7 ^ 2 3 7 G03777Ô b ô3 ISGTH T ~ K -\i -2 £ S G S -1 H 0 M S 0 N M28F101 io S f, S - T H O M S O N CMOS 1 Megabit 128K x 8 FLASH MEMORY ADVANCE DATA FAST ACCESS TIME: 100ns LOW POWER CONSUMPTION - Standby Current: 10OpA Max 10,000 ERASE/PROGRAM CYCLES


    OCR Scan     		PDF G03777Ô M28F101 100ns 10OpA M28F101 D037713 PDIP32 PLCC32 PTS032

    Untitled

    Abstract: No abstract text available
    Text: £yjSGS-THOMSON DWIllLI DW!lll©i M28F101 1 Mb 128K x 8, Chip Erase FLASH MEMORY • 5V ±10% SUPPLY VOLTAGE ■ 12V PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMING TIME: 1Ojas typical ■ ELECTRICAL CHIP ERASE in 1s RANGE ■ LOW POWER CONSUMPTION


    OCR Scan     		PDF M28F101 PDIP32 PLCC32 TSOP32 M28F101 TSOP32

    M28F101

    Abstract: PDIP32 PLCC32 TSOP32
    Text: w - SCS-THOMSON k7#» IM [MDi[LI STnMDKOD©i> M28F101 1 Mb (128K x 8, Chip Erase FLASH MEMORY • ■ ■ ■ ■ ■ ■ ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10^is typical ELECTRICAL CHIP ERASE in 1s RANGE


    OCR Scan     		PDF M28F101 10OfxA M28F101 TSOP32 TSOP32 PDIP32 PLCC32

    2A153

    Abstract: 7W32 M28F101
    Text: /=T SGS-IHOMSON 1 1 » HOIgWlilUEgT^SMlgS M28F101 *> CMOS 1 Megabit 128K x 8, Chip Erase FLASH MEMORY ABBREVIATED DATA FAST ACCESS TIME: 100ns LOW POWER CONSUMPTION - Standby Current: 100|iA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10^s


    OCR Scan     		PDF M28F101 100ns M28F101 VA00667 VA00670 2A153 7W32

    Untitled

    Abstract: No abstract text available
    Text: r = J SGS-THOMSON ^ 7 # M28F101 M ö ® © iL iM s ia ( g i CMOS 1 Megabit (128K x 8) FLASH MEMORY ADVA N CE DATA • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iAMax * 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE


    OCR Scan     		PDF M28F101 100ns M28F101 PDIP32 PLCC32

    Untitled

    Abstract: No abstract text available
    Text: EjJ SGS-THOMSON D»ILI £TMD(gi M28F101 1 Mb (128K x 8, Chip Erase FLASH MEMORY • 5V ±10% SUPPLY VOLTAGE ■ 12V PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMING TIME: lO^s typical ■ ELECTRICAL CHIP ERASE in 1s RANGE ■ LOW POWER CONSUMPTION


    OCR Scan     		PDF M28F101

    Untitled

    Abstract: No abstract text available
    Text: M28F101 1 Mbit 128Kb x8, Bulk Erase Flash Memory • ■ ■ ■ ■ ■ ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACC ESS TIME: 70ns BYTE PROGRAMING TIME: 10|is typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION Stand-by Current: 5|j,A typical


    OCR Scan     		PDF M28F101 128Kb M28F101 TSOP32