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Catalog Datasheet	MFG & Type	Document Tags	PDF
uPD70216 Abstract: uPD74HC1 32MSDRAM Text: SELF REFRESH DRAM 1994, 1996 Document No. M11500EJ2V0AN00 2nd edition (Previous No. IEA-1300) Date Published August 1996 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and	Original	M11500EJ2V0AN00 IEA-1300) uPD70216 uPD74HC1 32MSDRAM	PDF

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uPD70216

Abstract: uPD74HC1 32MSDRAM
Text: SELF REFRESH DRAM 1994, 1996 Document No. M11500EJ2V0AN00 2nd edition (Previous No. IEA-1300) Date Published August 1996 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and

Original

M11500EJ2V0AN00 IEA-1300) uPD70216 uPD74HC1 32MSDRAM

PDF