M 82S181 Search Results

M 82S181 Result Highlights (5)

Part	Manufacturer	Description
5962-9762201QEA	Texas Instruments	Quad LVDS Receiver 16-CDIP -55 to 125
SN65LV1023ARHBR	Texas Instruments	10:1 LVDS Serdes Transmitter 100 - 660Mbps 32-VQFN -40 to 85
SN65LV1224BDBR	Texas Instruments	1:10 LVDS Serdes Receiver 100 - 660Mbps 28-SSOP -40 to 85
SN65LVCP22DR	Texas Instruments	2x2 Crosspoint Switch : LVDS Outputs 16-SOIC -40 to 85
SN65LVCP23PW	Texas Instruments	2x2 Crosspoint Switch : LVPECL Outputs 16-TSSOP -40 to 85

M 82S181 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
77S185 Abstract: mil-prf 38510 cross index 77S180 77S184 marking 209e Text: INCH-POUND MIL-M-38510/209E 23 February 2006 SUPERSEDING MIL-M-38510/209D 30 September 1986 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, 8192-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY PROM , MONOLITHIC SILICON Inactive for new design after 24 July 1995	Original	PDF	MIL-M-38510/209E MIL-M-38510/209D 8192-BIT, MIL-PRF-38535. 77S185 mil-prf 38510 cross index 77S180 77S184 marking 209e
Untitled Abstract: No abstract text available Text: INCH-POUND MIL-M-38510/209F 15 April 2013 SUPERSEDING MIL-M-38510/209E 23 February 2006 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, 8192-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY PROM , MONOLITHIC SILICON Inactive for new design after 24 July 1995	Original	PDF	MIL-M-38510/209F MIL-M-38510/209E 8192-BIT, MIL-PRF-38535.
transistor C3866 Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246 Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)	Original	PDF
N82S181F Abstract: 82LS181 82S180 82S181 S82S181 Text: JANUARY 1983 BIPOLAR MEMORY DIVISION 82S180 O.C.J/82S181 (T.S. 8192-BIT BIPOLAR PROM (1 0 2 4 x 8 ) PIN CONFIGURATION DESCRIPTION FEATURES The 82S180 and 82S181 are fie ld program m able, w hich means th a t cu sto m patte rn s are im m ed iate ly available by	OCR Scan	PDF	8192-BIT 1024x8) 82S180 J/82S181 82S180 82S181 N82S181F 82LS181 S82S181
N82S185 Abstract: N82S141 93427c 74S200 N82S147 6331-1 6301-1 prom 74S301 DM74S287 PROM intel 3601 Text: BIPOLAR M E M O R Y M AY 1962 8192-BIT BIPOLAR PROM 2 0 4 8 x 4 82S185(T.S.) DESCRIPTIO N FEATURES T h e 82S 185 is fie ld p ro g ra m m a b le , w h ic h	OCR Scan	PDF	8192-BIT 2048x4) 82S185 82S185 N82S185, N82HS185 N82S25 N82S16 N82S185 N82S141 93427c 74S200 N82S147 6331-1 6301-1 prom 74S301 DM74S287 PROM intel 3601
N82S141 Abstract: 82HS191 MCM10149 N82S137 74S301 N82LS181 CE23 MCM7620 N82HS191 N82S130 Text: MAY 1982 BIPOLAR M EM O RY DIVISION 16,384-BIT BIPOLAR PROM 2 0 4 8 x 8 _ 82HS191 (T.S.) DESCRIPTION PIN CONFIGURATIONS T h e 82H S 191 is fie ld p r o g r a m m a b le , w h ic h m e a n s th a t c u s to m p a tte rn s a re im m e d ia te	OCR Scan	PDF	384-BIT 2048x8) 82HS191 82HS191 The82HS191 N82HS191, N82HS185 N82S25 N82S16 N82S141 MCM10149 N82S137 74S301 N82LS181 CE23 MCM7620 N82HS191 N82S130
82S181A Abstract: No abstract text available Text: 82S181A Signetics 8K-Bit TTL Bipolar PROM Military Bipolar Memory Products Product Specification DESCRIPTION FEATURES APPLICATIONS T h e 8 2S 1 8 1 A is field-program m able, which m eans that custom patterns are • Address access time: 55ns max • Prototyping/volume production	OCR Scan	PDF	82S181A 82S181A
6301-1 prom Abstract: MMI 6301-1 93427C 6331-1 MMI 6341-1 dm74s472 PROM intel 3601 DM74S570 MMI 6330 N82S23 Text: MAY 1982 BIPOLAR MEMORY DIVISION 82HS195 T.S. 16,384-BIT BIPOLAR PROM (4 0 9 6 x 4 ) A d v a n c e Inform ation DESCRIPTION FEATURES The 82H S 19 5 is fie ld p ro g ra m m a b le , w h ic h m e a n s th a t c u s to m p a tte rn s are im m e d i a te	OCR Scan	PDF	384-BIT 4096x4) 82HS195 82HS195 93427C N82S129 93436C N82S130 6301-1 prom MMI 6301-1 6331-1 MMI 6341-1 dm74s472 PROM intel 3601 DM74S570 MMI 6330 N82S23
MMI 6381 Abstract: 53C881 53C881A 63C881 63C881A 63LS880 63LS881 63PS881 82HS181 RAYTHEON ROM Text: - 31 - 6 3 8 0 m « tt & imm OC X -i y y me max ns) TCAC max (ns) TOH max (ns) It TOE m ax (ns) TOD max: (ns.) m (Ta=25*C) V D D or V C C (V) A I DD typ OaA) I DD max OuA) I IL/VIIL raax (mA/V) -h/m%« VIL max (V) ai Œ I IH/VIIH max (mA/V) VIH min (V)	OCR Scan	PDF	53C881 53C881A 63C881 63C881A Al27S180A Am27S181A CY7C282-30 024X8) 24PIN MMI 6381 53C881 63LS880 63LS881 63PS881 82HS181 RAYTHEON ROM
Signetics 2650 Abstract: SIGNETICS 2656 2kx8 rom 2655 ppi 128X8 2650 signetics 74LS240 1K x4 static ram application note 1K x4 static ram 1A08-1A0F Text: 2656-1 PRELIMINARY SPECIFICATION PIN CONFIGURATION DESCRIPTION FEATURES The. Signetics 2656 System Memory Inter face SMI is a mask programmable circuit with on-chip memory, I/O, and timing (clock) functions. It is useable either in 2chip or m ulti-chip m icrocom puter systems.	OCR Scan	PDF	128X8 0000-07FF 82S181) 0800-0BFF 1400-14FF 1500-157F 74LS374) 74LS240) 1A08-1A0F Signetics 2650 SIGNETICS 2656 2kx8 rom 2655 ppi 2650 signetics 74LS240 1K x4 static ram application note 1K x4 static ram 1A08-1A0F
18-1-EAD Abstract: transistor sj 13005 d wf vqc 10 d a6 13005 2 13005 TRANSISTOR 16X64 led matrix EEG Project with circuit diagram MARKING code WMM RF transistor pr 8501 b SEC 13005 Text: MIL-M-38510/209D 30 SEPTEMBER 1986 MIL-M-38510/209C 24 October 1983 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, 8192-BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY PROM , MONOLITHIC SILICON T h is s p e c if ic a tio n I s approved fo r use by a l l Depart	OCR Scan	PDF	MIL-M-38510/209D MIL-M-38510/209C 8192-BIT CDKB/18324 CRP/07933 CFJ/07263 CDWN/34335 18-1-EAD transistor sj 13005 d wf vqc 10 d a6 13005 2 13005 TRANSISTOR 16X64 led matrix EEG Project with circuit diagram MARKING code WMM RF transistor pr 8501 b SEC 13005
HN462532G Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4 Text: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .	OCR Scan	PDF
N82S181AN Abstract: N82S181 82S181 82S181A N82S181A 2TNC N82S SIGNETICS YH02 Text: Philips C o m p o n e n ts -S ig n e tic s Document No. 853-0130 ECN No. 86487 Date of Issue November 11, 1986 Status Product Specification 82S181 / 82S181A 8K-bit TTL bipolar PROM Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S181 and 82S181A are field	OCR Scan	PDF	82S181 82S181A 82S181A N82S181 N82S181A N82S181AN N82S181 N82S181A 2TNC N82S SIGNETICS YH02
CE34 Abstract: No abstract text available Text: Philips C o m p o n e n ts -S ig n e tic s Document No. 853-0130 ECN No. 86487 Date of Issue November 11, 1986 Status Product Specification 82S181 / 82S181A 8K-bit TTL bipolar PROM Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S181 and 82S181A are field	OCR Scan	PDF	82S181 82S181A 82S181A N82S181 CE34

8223 prom memory Abstract: 93451 prom AM27S181 63S881 87S181 S4 2A 82HM181 82S181 HM7681 TBP28S86 Text: DIMñfÜ^OIL 82HM 181 8 1 9 2 Bit 1024 X 8 H M O S ROM GENERAL DESCRIPTION FEATURES • • • • • • • • • The 82HM181 is a high speed 8,192 b it read-only m em ory (ROM) organized 1024 w ords by 8 b its. The device is fa b ric a te d using In te rs il’s SELOX HMOS tech nolog y, a	OCR Scan	PDF	82HM181 82HM181 82HM181C 82HM181M 82HM181C: 82HM181M: 8223 prom memory 93451 prom AM27S181 63S881 87S181 S4 2A 82S181 HM7681 TBP28S86
N82S181N Abstract: CE12 Text: Philips Components-Signetics Document No. 8 5 3 -0 1 3 0 ECN No. 86487 Date of Issue N ove m b e r 11, 1986 S ta tu s P ro du ct S p ecification 8 2 S 1 8 1 / 8 2 S 1 8 1 A 8K-bit TTL bipolar PROM M em ory Products DESCRIPTION FEATURES The 8 2 S 1 81 and 8 2 S 1 8 1 A are field	OCR Scan	PDF	82S181 82S181A N82S181 N82S181A N82S181N CE12
Creative IC CT 1975 Abstract: 74s188 programming sd 431 sn74s454 MMI TiW PROM programming procedure ci la 7610 74S472 PROM PROGRAMMING MB7122H 74S287 programming instructions FZH 161 Text: Part of the Harris Spectrum of Integrated Circuits 44 HARRIS Q Quantum e! scironic#500 Sox 391262 B ra m ie y 1984 Harris Bipolar Digital Data Book 2018 Harris Semiconductor Bipolar Digital Products represent state-of-the-art production in density and performance.	OCR Scan	PDF
27S43 Abstract: No abstract text available Text: Product Specifications PROMs 29000 Series PROMs Raytheon 29000 Series Field Programmable Read-Only Memories Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low po w e r S ch o ttky te ch n o lo g y H ighly reliable n ichro m e fuses Three-state ou tputs	OCR Scan	PDF
Intel 8245 Abstract: 87S181 63S881 AM27S181 82HM181 TBP28S86 M7581 RAYTHEON ROM Bipolar ROM 1K X 4 Intel 8244 Text: 1 0 2 4 X 82H M 181 8 1 9 2 Bit 8 HMOS ROM GENERAL DESCRIPTION • • • • • • • • • The 82HM181 Is a high speed 8,192 b it read-only memory (ROM) organized 1024 words by 8 bits. The device is fabricated using In te rsil’s SELOX HMOS technology, a	OCR Scan	PDF	82HM181 82HM181 Intel 8245 87S181 63S881 AM27S181 TBP28S86 M7581 RAYTHEON ROM Bipolar ROM 1K X 4 Intel 8244
P80A49H Abstract: 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel Text: COMPONENT DATA CATALOG JANUARY 1982 Intel C orporation makes no w arranty fo r the use of its products and assumes no re sponsib ility fo r any e rrors w hich may appear in th is docum ent nor does it make a com m itm ent to update the info rm atio n contained herein.	OCR Scan	PDF	RMX/80, P80A49H 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel
Intel mcs-40 Abstract: intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40 Text: PRIC E 15 00 memory design handbook m in ia i O k p a r » lio n 1 0 7 7 INTRODUCTION The Intel Memory Design Handbook contains information on the use of Intel’s memory components and support circuits in system application. It is intended to aid the system designer to gain a thorough	OCR Scan	PDF	S-10380 CH-8021 /C-160/0577/50K Intel mcs-40 intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40
93451 prom Abstract: 93451 8223 prom 63S881 87S181 TBP28S86 s3 tech Text: DlííñÜi^IL 1024 GENERAL DESCRIPTION FEATURES • • • • • • • • • X 82HM181 8192 Bit 8 HMOS ROM The 82HM181 is a high speed 8,192 b it read-only m em ory (ROM) organized 1024 w ord s by 8 bits. The device is fa b rica te d using In te rs il’s SELOX HMOS tech nolog y, a	OCR Scan	PDF	82HM181 82HM181C: 93451 prom 93451 8223 prom 63S881 87S181 TBP28S86 s3 tech
1k x 8 bipolar Abstract: 82S181 82HS181 AFN-02064A Text: inteT 82S181/82HS181 8K 1K x 8 BIPOLAR M 82S181 70 ns Max. 82HS181 50 ns Max. Fast Access Time: 50 ns for 82HS181 Low Power Dissipation: 0.08 mW/Bit Typically Four Chip Select Inputs for Easy Memory Expansion • Three-State Outputs ■ Hermetic 24-Pin DIP	OCR Scan	PDF	82S181/82HS181 82S181 82HS181 24-Pin and82HS181 U92-bitj 82HS181 1k x 8 bipolar AFN-02064A
82S181A Abstract: No abstract text available Text: Philips Components-Signetics Document No. 853-0130 ECN No. 86487 Date of Issue November 11, 1986 Status Product Specification 82S181 / 82S181A 8K-bit TTL bipolar PROM Memory Products DESCRIPTION The 82S181 and 82S181Aarefield programmable, which means that	OCR Scan	PDF	82S181 82S181A 82S181Aarefield 82S181 82S181A organization25V N82S181 N82S181A

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M 82S181 Search Results

M 82S181 Result Highlights (5)

M 82S181 Datasheets Context Search

77S185

Untitled

transistor C3866

N82S181F

N82S185

N82S141

82S181A

6301-1 prom

MMI 6381

Signetics 2650

18-1-EAD

HN462532G

N82S181AN

CE34

8223 prom memory

N82S181N

Creative IC CT 1975

27S43

Intel 8245

P80A49H

Intel mcs-40

93451 prom

1k x 8 bipolar

82S181A