LT/SG3527A
Abstract: No abstract text available
Text: Surface Mount Zener Diodes Data Sheet 225m WATTS SMALL SIGNAL FMBZ5221B S e rie s De s c ription M e c ha nic a l Dim e ns ions 1 3 Cathode Anode . 110 . 060 . 037 3 CATHODE . 115 . 037 . 016 1 3 2 ANODE 1 . 043 . 016 2 . 004 Features: *225mw Power Dissipation
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FMBZ5221B
225mw
OT-23
MIL-STD-202,
008grams
LT/SG3527A
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LT/SG3527A
Abstract: No abstract text available
Text: MMBZ5221B Series Surface Mount Zener Diodes SMALL SIGNAL ZENER DIODES 225m WATTS Features: *225mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.4V to 91V 3 Mechanical Data: 1 *Case : SOT-23 Molded plastic *Terminals: Solderable per MIL-STD-202, Method 208
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MMBZ5221B
225mw
OT-23
MIL-STD-202,
008grams
OT-23
Z5267BT
Z5270BT
LT/SG3527A
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CDLL5221
Abstract: CDLL5221B CDLL5222B CDLL5223B CDLL5224B CDLL5225B CDLL5226B CDLL5227B CDLL5228B CDLL5229B
Text: CDLL5221 thru • ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT CDLL5272B • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Power Derating: 10 mW / °C above TEC = +125°C
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CDLL5221
CDLL5272B
CDLL5221B
CDLL5222B
CDLL5223B
CDLL5224B
CDLL5225B
CDLL5226B
CDLL5227B
CDLL5228B
CDLL5221
CDLL5221B
CDLL5222B
CDLL5223B
CDLL5224B
CDLL5225B
CDLL5226B
CDLL5227B
CDLL5228B
CDLL5229B
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CD5226B
Abstract: 1N5221B 1N5272B CD5221B CD5222B CD5223B CD5224B CD5225B CD5227B CD5228B
Text: • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD5221B thru • ELECTRICALLY EQUIVALENT TO 1N5221B THRU 1N5272B CD5272B • ZENER DIODE CHIPS • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
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CD5221B
1N5221B
1N5272B
CD5272B
CD5222B
CD5223B
CD5224B
CD5225B
CD5226B
CD5226B
1N5272B
CD5221B
CD5222B
CD5223B
CD5224B
CD5225B
CD5227B
CD5228B
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Untitled
Abstract: No abstract text available
Text: CDLL5221 thru • ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT CDLL5272B • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Power Derating: 10 mW / °C above T EC = +125°C
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CDLL5221
CDLL5272B
CDLL5221B
CDLL5222B
CDLL5223B
CDLL5224B
CDLL5225B
CDLL5226B
CDLL5227B
CDLL5228B
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CDLL5221
Abstract: CDLL5221B CDLL5222B CDLL5223B CDLL5224B CDLL5225B CDLL5226B CDLL5227B CDLL5228B CDLL5229B
Text: CDLL5221 thru • ZENER DIODES •LEADLESS PACKAGE FOR SURFACE MOUNT CDLL5272B • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Power Derating: 10 mW / °C above TEC = +125°C
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CDLL5221
CDLL5272B
CDLL5221B
CDLL5222B
CDLL5223B
CDLL5224B
CDLL5225B
CDLL5226B
CDLL5227B
CDLL5228B
CDLL5221
CDLL5221B
CDLL5222B
CDLL5223B
CDLL5224B
CDLL5225B
CDLL5226B
CDLL5227B
CDLL5228B
CDLL5229B
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CD5265
Abstract: No abstract text available
Text: • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD5221B thru • ELECTRICALLY EQUIVALENT TO 1N5221B THRU 1N5272B CD5272B • ZENER DIODE CHIPS • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
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1N5221B
1N5272B
CD5221B
CD5272B
CD5222B
CD5223B
CD5224B
CD5225B
CD5226B
CD5265
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CD5265
Abstract: 1N5221B 1N5272B CD5221B CD5222B CD5223B CD5224B CD5225B CD5226B CD5227B
Text: • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD5221B thru • ELECTRICALLY EQUIVALENT TO 1N5221B THRU 1N5272B CD5272B • ZENER DIODE CHIPS • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
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CD5221B
1N5221B
1N5272B
CD5272B
CD5222B
CD5223B
CD5224B
CD5225B
CD5226B
CD5265
1N5272B
CD5221B
CD5222B
CD5223B
CD5224B
CD5225B
CD5226B
CD5227B
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CD5221B
Abstract: CD5237B
Text: • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD5221B thru • ELECTRICALLY EQUIVALENT TO 1N5221B THRU 1N5272B CD5272B • ZENER DIODE CHIPS • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
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1N5221B
1N5272B
CD5221B
CD5272B
CD5222B
CD5223B
CD5224B
CD5225B
CD5226B
CD5237B
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IN5221
Abstract: No abstract text available
Text: Zener Diode Chip Series CD5221B thru CD5272B Features • All junctions completely protected with silicon dioxide • Electrically equvalent to IN5221B thru IN5272B • 0.5 Watt capability with proper heat sinking • Compatible with all wire bonding and die attach
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CD5221B
CD5272B
IN5221B
IN5272B
200mA:
20entative
IN5221
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CD5226B
Abstract: IN5221B IN5221 IN5272B CD522
Text: Zener Diode Chip Series CD5221B thru CD5272B Features • All junctions completely protected with silicon dioxide • Electrically equvalent to IN5221B thru IN5272B • 0.5 Watt capability with proper heat sinking • Compatible with all wire bonding and die attach
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CD5221B
CD5272B
IN5221B
IN5272B
200mA:
CD5226B
IN5221
CD522
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zener diode 47-10
Abstract: CD4106 CD4104 1N4099 1N4135 CD4099 CD4100 CD4101 CD4102 CD4103
Text: • 1N4099 THRU 1N4135 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/435 • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • ELECTRICALLY EQUIVALENT TO 1N4099 THRU 1N4135 CD4099
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1N4099
1N4135
MIL-PRF-19500/435
1N4135
CD4099
CD4135
zener diode 47-10
CD4106
CD4104
CD4099
CD4100
CD4101
CD4102
CD4103
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zener diode 47-10
Abstract: CD4106 diode lt 250 CD4100 CD4130 CD4109 CD4099 1N4099 1N4135 CD4102
Text: • 1N4099 THRU 1N4135 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/435 • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • ELECTRICALLY EQUIVALENT TO 1N4099 THRU 1N4135 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
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1N4099
1N4135
MIL-PRF-19500/435
1N4135
CD4099
CD4135
zener diode 47-10
CD4106
diode lt 250
CD4100
CD4130
CD4109
CD4099
CD4102
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1N962B
Abstract: 1N986B CD957B CD958B CD959B CD960B CD961B CD962B CD963B CD986B
Text: • 1N962B THRU 1N986B AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/117 CD957B thru • ZENER DIODE CHIPS CD986B • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
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1N962B
1N986B
MIL-PRF-19500/117
CD957B
CD986B
200mA:
CD957B
CD958B
CD959B
CD960B
CD961B
CD962B
CD963B
CD986B
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Diode LT 228
Abstract: CD4747 CD4739 1N4728A 1N4764A CD4728A CD4729A CD4730A CD4731A CD4733A
Text: • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD4728A thru • ELECTRICALLY EQUIVALENT TO 1N4728A THRU 1N4764A CD4764A • ZENER DIODE CHIPS • 1 WATT CAPABILITY WITH PROPER HEAT SINKING • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
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CD4728A
1N4728A
1N4764A
CD4764A
CD4728A
Diode LT 228
CD4747
CD4739
1N4764A
CD4729A
CD4730A
CD4731A
CD4733A
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marking code 68W
Abstract: marking code 68W sot 68W SOT MARKING 68W SOT-23 MARKING 68W 68w diode
Text: SIEMENS BAT 68W Silicon Schottky Diodes Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching BAT 68-04W BAT68-05W BAT68-06W »1/kl C1/C2 R _ 0 _ "ET T lT Tj Type Marking Ordering Code Pin Configuration BAT 68-04W
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8-04W
BAT68-05W
BAT68-06W
8-04W
8-05W
8-06W
Q62702Q62702Q62702Q62702-
OT-323
OT-323
marking code 68W
marking code 68W sot
68W SOT
MARKING 68W SOT-23
MARKING 68W
68w diode
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C3289
Abstract: C32S1 c3277
Text: VARACTOR TUNING DIODES l i l a i i l l P a rt P ro d u c t H ig h lig h ts C a p a c ita n c e a t V „= 4 0 V and f= 1 0 M H z iillllllli! W C3289 7 W C3290 10 W C3291 12 W C3292 15 W C3293 H ig h V o lt a g e F ig u r e o f M a rti at 4 0 V and se M Hz
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OCR Scan
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C3289
C3292
C3293
VVC3298
VVC3299
VVC3294
WVVC3314
VVC3311
C3342
C33OT
C3289
C32S1
c3277
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Lpp 97
Abstract: transil 428 54-135
Text: transient voltage suppressors «TRANSIL» íí diodes de protection «TRANSIL» THOMSON-CSF 'R M @ V r m t»A 2,5 KW G LT G LT G LT G LT / 12 24 47 120 V) m in 12 24 47 120 m ax nom 350 W 1 ms expo. 5 5 5 5 @ V(BR>* (V) U nidirectional typ es / 15 30 60
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OCR Scan
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PDF
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CB-33)
Lpp 97
transil 428
54-135
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VVC733
Abstract: VVC751 VVC754 VVC758
Text: VARACTOR TUNING DIODES ;• :p Ë ô IC :s i ssiiiSiiis;! Product High tights Number C ap ac ita n ce a t Vh= 4 0 V and f=1 0 M H i illlilllii VVC733 Figure o f Meri t Q a t 4.0 V a n d 50 M H ï M in C ap acitan ce R atio from V ol is to V . , Volts Mfn Typ
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VVC733
WC736
WC741
WC747
VVC751
1M1401
1M1402
lMf403
1M1404
1M1405
VVC751
VVC754
VVC758
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GE-MOV
Abstract: varistor 82z2 Varistor RU 22z1 VARISTOR 56z2 VARISTOR 39Z1 gemov 18Z1 capacitor 47z1 33Z1
Text: ZA SERIES R EPLA C EM EN T FO R the following when used as transient suppressor: • Selenium Tryectors • Zener Diodes • Silicon Carbide • Gas Discharge Tubes • R-C Networks non-dv/dt • Neon Bulbs • Electronic Crowbar Circuits APPLICATIONS •
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diode cross reference
Abstract: 1N5472A WC32 VYC3302-WC331 IN4811 IN5476A gln 47 WC32B9-WC3301 IN5446A 1N5470A
Text: -T-Ol-IJ INTERNATIONAL S E M C O N D l|=|E I • 10003?» OOOOOOM 331 M U S E N VOLTAGE VARIABLE CAPACITANCE TUNING DIODES PRODUCT \ H IG H L IG H T S / V a ry H ig h Q L o w V o lt a g * L ow L a a k a g * C a p a c ita n e * T o ltr a n c * JEDEC Types
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1N5458A
1N5459A
1H5440A
MV833-MV840
UVI423-UVI8Â
UVIBS8-UVI87S
V7E-VI60E
V30CC-VB82E
PGI07-P5Ã
V100E-V9B2E
diode cross reference
1N5472A
WC32
VYC3302-WC331
IN4811
IN5476A
gln 47
WC32B9-WC3301
IN5446A
1N5470A
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1N53438
Abstract: 1n53668
Text: ZENER DIODES, 5 WATTS, PLASTIC PACKAGE Zener JEDEC p A rt Voltage * t * r Zener Test S u ffix AS S M axim um b e tte r Im ped* nee fit tj. tmA Suffix A.8.C M axim um Reverse Current at T ^ Z B ^ C M axim um Knee '.•••.'.'.'.wlr ft • Im pedance fit t »1 OmA Ron & A
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OCR Scan
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PDF
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1N5333B
1H5334B
1N5335B
1N5336B
1NS337B
1N53438
1n53668
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2m170z
Abstract: 2M11Z 2M12Z 2M13Z 2M14Z
Text: TAIWAN SEMICONDUCTOR [ s Pb RoHS 2M6.8Z - 2M200Z 2.0 Watts Glass Passivated Junction Silicon Zener Diodes COMPLIANCE DO-15 Features .1 4 0 3 .6 1 .0 (2 5 .4 ) MIN. .1 0 4 (2 .6 ) DIA, Plastic package has Underwriters Laboratory Flammability Classification
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OCR Scan
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2M200Z
DO-15
MIL-STD-750,
2M200Z)
2m170z
2M11Z
2M12Z
2M13Z
2M14Z
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Untitled
Abstract: No abstract text available
Text: ZENER DIODES, GLASS PACKAGE, GENERAL PURPOSE 400mW N o m in a l Zener V o tu g e M a x im u m Zener im p e d a n t * Test a t I, C u rre n t M a x im u m R e v e r s e N o g «A V. JAaxirtturrt Zener C u r re n t lili 1. Max <mA| BC 0 Sum * B ,C ,D S u ffix
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400mW
-IN6084
DO-35
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