pn4122
Abstract: PN3569 2N4402 2N4403 PN4250 MMBT4402
Text: bflE D • LS01130 003^520 Tb7 « N S C S General Purpose Amplifiers and Switches continued Devices (Volts) Min 40 ‘ NPN h fE@ lc k V CE0(smt) • ' PN P - - (mA) Max Min M ax NATL SENICON]) (DISCRETE ) fT @ lc mA (M Hz) Min mA MF (dB) Max P D (Amb) Package
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LS01130
PN3567
PN3569
TIS97
TN2219A
T0-92
O-237
O-236*
pn4122
2N4402 2N4403
PN4250
MMBT4402
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NZT6714
Abstract: TN6714A
Text: TN6714AI NZT6714 tu D iscrete P O W E R & S ig n a l Technologies National S e m i c o n d u c t o r ' " TN6714A NZT6714 SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A.
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NZT6714
OT-223
bS0113D
O-226
b501130
NZT6714
TN6714A
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27E SOT-23
Abstract: 27E 9 sot23 CK200 501MT BCW68G T092
Text: BCW68G ^ Discrete POWER & Signal Technologies Æ^m N a t i o n a l Semiconductor' BCW68G PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA. Sourced from Process 63. A b s o lu t e
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BCW68G
OT-23
b5D1130
LS01130
27E SOT-23
27E 9 sot23
CK200
501MT
BCW68G
T092
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biss 0001
Abstract: NDH832P 006CI
Text: J k J National S emi co n d u c t o r " NDH832P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDH832P
b501130
biss 0001
NDH832P
006CI
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NZT6729
Abstract: TN6729A
Text: TN6729A / NZT6729 & D iscrete PO W ER & S ig n a l Technologies National Semiconductor" NZT6729 TN6729A SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA.
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TN6729A
NZT6729
O-226
OT-223
004G745
b5D1130
DM0743
NZT6729
TN6729A
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DIODE 3L2
Abstract: Complementary MOSFET Half Bridge
Text: e? National February 1996 Semiconductor' NPS8852H Complementary MOSFET Half Bridge Features General Description These Complementary M O SFE T half bridge devices are produced using National's proprietary, high cell density, D M O S technology. This very high density process is especially tailored to
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NPS8852H
b5D113Q
DIODE 3L2
Complementary MOSFET Half Bridge
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NDP506BL
Abstract: Zener diode DW NDP506A NDB506AL NDB506BL NDP506AL
Text: National Semiconductor" May 1995 NDP506AL / NDP506BL NDB506AL / NDB506BL N-Channel Logic Level Enhancement I ide Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using
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NDP506AL
NDP506BL
NDB506AL
NDB506BL
S01130
0GM0215
bSD1130
Zener diode DW
NDP506A
NDB506BL
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supersot-3
Abstract: 2T3 transistor NDS335N FR 014 S0113D
Text: M ay 19 96 PRELIMINARY N at i o n a l Semiconductor~ NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N -Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS
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NDS335N
OT-23
OT-23)
NDS33SN
supersot-3
2T3 transistor
NDS335N
FR 014
S0113D
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L50Q
Abstract: BCW65C
Text: S e m i c o n d u c t o r “ BCW65C D iscrete P O W ER & S ig n a l Technologies National BCW65C M a rk : E D NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19.
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BCW65C
LS01130
004D673
L50Q
BCW65C
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PDF
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TN3440A
Abstract: No abstract text available
Text: S e m i c o n d u c t o r TN3440A & D iscrete P O W ER & S ig n a l T echnologies . National T N 3440A NPN General Purpose Amplifier T h is d e v ic e is d e s ig n e d for u se in h o rizo n tal driver, c la s s A off-line a m p lifier an d off-line sw itching a pp licatio ns. S o u rc e d from P ro c e s s 36.
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TN3440A
LSD1130
0Q40bm
O-226
L50113D
D01DL42
TN3440A
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2n3904 spice model
Abstract: 2N3904 equivalent 2N3904 2n3904 spice model of 2n3904 MMBT3904 2N39041 2N3904 b10 50113G L50113
Text: 2N3904 MMBT3904 SOT-23 B Mark: 1A MMPQ3904 PZT3904 SOT-223 SOIC-16 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 M H z as an amplifier. Sourced from Process 23.
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2N3904
MMBT3904
MMPQ3904
PZT3904
2N3904
MMBT3904
OT-23
MMPQ3904
SOIC-16
2n3904 spice model
2N3904 equivalent
2n3904 spice
model of 2n3904
2N39041
2N3904 b10
50113G
L50113
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Supersot6
Abstract: ld32a NDC651N 55sc
Text: National • Semiconductor" March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description ■ 3.2A, 30V. Ft,*, , = 0.09£1 @ VGS = 4.5V R d sio n i = 0 .0 6 0 @ VGS = 10V. These N-Channel logic level enhancement mode
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NDC651N
bSD113D
Supersot6
ld32a
NDC651N
55sc
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FLC 100
Abstract: 728p cny 76 200U 2N3906 MMBT3906 MMPQ3906 PZT3906 SOIC-16
Text: 2N39061 MMBT39061 MMPQ39061 PZT3906 & Discrete POWER & Signal Technologies National Semiconductor” MMBT3906 2N3906 SOT-23 B Mark: 2A MMPQ3906 PZT3906 SOT-223 SOIC-16 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch
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2N3906
MMPQ3906
MMBT3906
PZT3906
SOIC-16
OT-223
rO-92
b5D113D
0QMQb71
FLC 100
728p
cny 76
200U
2N3906
MMBT3906
MMPQ3906
PZT3906
SOIC-16
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transistor t04 76
Abstract: GV 475 diode transistor T04 NDB6060 004027S
Text: Na t io n a I Sem iconductor~ M arch 19 96 N DP6060/ NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDP6060/NDB6060
025ft
b50113G
0DMQ27H
bS01130
004027S
transistor t04 76
GV 475 diode
transistor T04
NDB6060
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NDS9405
Abstract: IAT50
Text: May 1996 N ationa I Semiconductor' NDS9405 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS9405
bSD1130
031tmb
NDS9405
IAT50
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BF244A
Abstract: BF244B BF244C "N-Channel JFET" BF244 OF BF244A OR B N-CHANNEL JFET
Text: " BF244A BF244B BF244C BF244A / BF244B / BF244C u ct o r D isc re te POW ER &. S ig n a l T ech n ologies N-Channel JFET RF Amplifier This device is designed for RF amplifier and mixer and applications operating up to 450 MHz, and or analog switching requiring low
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BF244A
BF244B
BF244C
bSD113D
BF244C
"N-Channel JFET"
BF244
OF BF244A OR B N-CHANNEL JFET
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Untitled
Abstract: No abstract text available
Text: Type No. IRF232 IRF630 IRF631 IRF632 IRF633 9-16 2N6759 2N6760 IRF330 IRF331 IRF333 IRF730 IRF731 TO-204AA 42 T 02 04A A (42) TO-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) TO-220 (37) 70220 (37) T0204AA (42) TO-204AA (42) T 02 04A A (42) T0-204AA (42)
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IRF232
IRF233
IRF630
IRF631
IRF632
IRF633
MTP12N18
MTP12N20
2N6759
2N6760
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PDF
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diode e 1205
Abstract: mmbd1201
Text: tß S e m i c o n d u c t o r " MMBD1201 /1203 /1204 /1205 ÜL 24 " E 0 " M A R K IN G SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units Wiv Working Inverse Voltage
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MMBD1201
OT-23
L5G113D
diode e 1205
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NDS9936
Abstract: Vi46 ab-1 national
Text: N at i o n a l tß May 1996 Semiconductor" NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS9936
LS01130
125-C
bS01130
NDS9936
Vi46
ab-1 national
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PDF
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NDB7061
Abstract: NDP7061 LD 8105 d0403
Text: National Semiconductor" M ay 1 9 9 6 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDP7061
NDB7061
Ru99ed
D04031L
LD 8105
d0403
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PDF
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PN4860
Abstract: PN4857 2N5639 J106 PN4858 2N5555 2N5638 2N5640 J105 J107
Text: N o. P kg . Signal T T r^ t ? ? ? ? 00 ^ in t" io ^ io CM CM CM CM O O) o CM CM CN CM O O O O CM CM CM CM 0) 0 ) 0 0) CM CM CN CN 0)0 in in in in in in in in in o ^ <5 q o to in co 2 2 in ^ o m 2 2 2 s £ ! °9 <9 _ O _ O _ O CN *- o o o in s in « in 50
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2N5555
2N5638
2N5639
2N5640
PN4858
PN4859
PN4860
PN4861
PN4857
J106
J105
J107
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PDF
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NDS9943
Abstract: 56 pF CH N-8C
Text: N a t ion a I Semiconductor" M ay 1996 NDS9943 Dual N & P-Channei Enhancement Mode Field Effect Transistor General Description Features These du a l N- and P-Channel enhancem ent m ode p o w e r fie ld effect transistors are produced using N a tio n a l's p ro p rie ta ry, high cell density, DMOS
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NDS9943
bSD113G
0D400Q2
NDS9943
56 pF CH
N-8C
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mmbt2906a
Abstract: MMBTL51 MMBT2904A
Text: ^Sem iconductor SEMICOND Surface Mount Transistors General Purpose Amplifiers and Switches—PNP MMBT 2904 TO-236 49 60 40 5 MMBT2904A TO-236 (49) 60 40 5 TO-236 (49) 60 MMBT2905A TO-236 (49) 60 MMBT 2906 TO-236 (49) 60 MMBT 2906A TO-236 (49) 60 MMBT 2905
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OCR Scan
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O-236
mmbt2906a
MMBTL51
MMBT2904A
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PDF
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mpsa42 "sot23"
Abstract: MMBTA42 MARK MPSA42 NATIONAL NATIONAL MPSA42 BD004 National semi spice model MPSA42 sot
Text: MPSA42 / MMBTA42 / PZTA42 e? Discrete POWER & Signal Technologies National Semi conductor' PZTA42 MMBTA42 MPSA42 SOT-23 B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color C RT and other high voltage applications. Sourced
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MPSA42
MMBTA42
PZTA42
MPSA42
MMBTA42
OT-23
OT-223
mpsa42 "sot23"
MMBTA42 MARK
MPSA42 NATIONAL
NATIONAL MPSA42
BD004
National semi spice model
MPSA42 sot
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