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    LP0701N3 Search Results

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    LP0701N3 Price and Stock

    Microchip Technology Inc LP0701N3-G

    MOSFET P-CH 16.5V 500MA TO92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LP0701N3-G Bag 818 1
    • 1 $1.96
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    Avnet Americas LP0701N3-G Bulk 8 Weeks, 4 Days 1
    • 1 $2.04
    • 10 $1.87
    • 100 $1.56
    • 1000 $1.56
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    LP0701N3-G Bag 4 Weeks 1,000
    • 1 -
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    • 1000 $1.0094
    • 10000 $0.88385
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    Mouser Electronics LP0701N3-G 480
    • 1 $1.96
    • 10 $1.96
    • 100 $1.63
    • 1000 $1.5
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    Verical LP0701N3-G 625 50
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    • 1000 $1.885
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    LP0701N3-G 400 6
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    • 10 $1.0883
    • 100 $1.0607
    • 1000 $1.0539
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    LP0701N3-G 238 49
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    LP0701N3-G 110 34
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    Arrow Electronics LP0701N3-G 400 4 Weeks 1
    • 1 $1.0883
    • 10 $1.0883
    • 100 $1.0607
    • 1000 $1.0539
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    Newark LP0701N3-G Bulk 238 1
    • 1 $1.03
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    RS LP0701N3-G Bulk 49 Weeks 1,000
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    • 1000 $1.88
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    Microchip Technology Inc LP0701N3-G Bag 10,834 7 Weeks
    • 1 $1.96
    • 10 $1.96
    • 100 $1.5
    • 1000 $1.26
    • 10000 $1.14
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    Onlinecomponents.com LP0701N3-G 636
    • 1 -
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    • 100 $1.68
    • 1000 $1.45
    • 10000 $1.39
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    TME LP0701N3-G 110 1
    • 1 $2.17
    • 10 $1.64
    • 100 $1.49
    • 1000 $1.49
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    NAC LP0701N3-G Bag 8,000 1
    • 1 $1.15
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    • 100 $1.04
    • 1000 $0.94
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    Avnet Silica LP0701N3-G 6 Weeks 1,000
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    EBV Elektronik LP0701N3-G 5 Weeks 1,000
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    Master Electronics LP0701N3-G 636
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    • 100 $1.68
    • 1000 $1.448
    • 10000 $1.391
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    Microchip Technology Inc LP0701N3

    MOSFET - P-Channel - 16.5 V - 500 mA - 1.5 Ohms - 1 W - TO-92-3 Package - Through Hole.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com LP0701N3 8
    • 1 $0.632
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    • 100 $0.516
    • 1000 $0.516
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    Master Electronics LP0701N3 8
    • 1 $0.633
    • 10 $0.633
    • 100 $0.516
    • 1000 $0.516
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    Supertex Inc LP0701N3

    TRANSISTOR,MOSFET,P-CHANNEL,16.5V V(BR)DSS,TO-92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components LP0701N3 4
    • 1 $7.0044
    • 10 $5.1366
    • 100 $5.1366
    • 1000 $5.1366
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    LP0701N3 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LP0701N3 Unknown Metal oxide P-channel FET, Enhancement Type Original PDF
    LP0701N3 Supertex P-Channel Enhancement-Mode Lateral MOSFET Original PDF
    LP0701N3-G Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 16.5V 0.5A TO92-3 Original PDF

    LP0701N3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LP0701

    Abstract: LP0701LG LP0701N3 LP0701ND
    Text: LP0701 Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-92 SO-8 Die -16.5V 1.5Ω -1.25A -1.0V LP0701N3 LP0701LG LP0701ND Advanced MOS Technology Features


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    PDF LP0701 LP0701N3 LP0701LG LP0701ND -300mA 238pF 115pF LP0701 LP0701LG LP0701N3 LP0701ND

    LP0701

    Abstract: LP0701LG LP0701N3 LP0701ND
    Text: LP0701 Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-92 SO-8 Die -16.5V 1.5Ω -1.25A -1.0V LP0701N3 LP0701LG LP0701ND Features Advanced MOS Technology


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    PDF LP0701 LP0701N3 LP0701LG LP0701ND -300mA 238pF 115pF LP0701 LP0701LG LP0701N3 LP0701ND

    to-92 mosfet 1A

    Abstract: LP0701N3 low vgs mosfet to-92 mosfet 1A to-92 LP0701 LP0701LG LP0701ND
    Text: LP0701 LP0701 Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-92 SO-8 Dice -16.5V 1.5Ω -1.25A -1.0V LP0701N3 LP0701LG LP0701ND 7 Advanced MOS Technology


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    PDF LP0701 LP0701N3 LP0701LG LP0701ND O-92/SO-8 to-92 mosfet 1A LP0701N3 low vgs mosfet to-92 mosfet 1A to-92 LP0701 LP0701LG LP0701ND

    mosfet n3

    Abstract: No abstract text available
    Text: LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices


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    PDF LP0701 DSFP-LP0701 A012409 mosfet n3

    TO243AA

    Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
    Text: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G


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    PDF 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G TO243AA TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB

    Voltage Regulator lm10

    Abstract: 100 amp npn mosfet high gain low voltage PNP transistor LM10 op amp 2d TRANSISTOR datasheet 22k resistor 1/4 watt datasheet 2k resistor 2 watt datasheet 62M TEX diode r4 high gain low voltage NPN transistor
    Text: LP07 Series Applications LP07 Series Application Note AN-D14 Low Dropout 3.0 Volt Linear Regulator by Jimes Lei, Applications Engineer Introduction A1 is configured as a unity gain buffer for the 0.2V reference. The output of A1 is attenuated by R1 and R2 and is connected to the


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    PDF AN-D14 Voltage Regulator lm10 100 amp npn mosfet high gain low voltage PNP transistor LM10 op amp 2d TRANSISTOR datasheet 22k resistor 1/4 watt datasheet 2k resistor 2 watt datasheet 62M TEX diode r4 high gain low voltage NPN transistor

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


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    PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    DN2540N5

    Abstract: HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3
    Text: March 2010 SUPERTEX PRODUCTS TRANSITIONED TO RoHS COMPLIANT PACKAGING Leaded / Non-Green Part Number Obsolete Lead-Free / Green Part Number (Replacement) 2N7000 2N7002 2N7008 CL2K4 CL2N3 CL2N8 DN2470K4 DN2530N3 DN2530N8 DN2535N3 DN2535N5 DN2540N3 DN2540N5


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    PDF 2N7000 2N7002 2N7008 DN2470K4 DN2530N3 DN2530N8 DN2535N3 DN2535N5 DN2540N3 DN2540N5 DN2540N5 HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3

    Voltage Regulator lm10

    Abstract: LM10 op amp LM10 LP07 LP0701N3
    Text: AN-D14 Application Note Low Dropout 3.0 Volt Linear Regulator by Jimes Lei, Applications Engineering Manager Introduction to the open-loop gain of A2. The output of A2 regulates the gate of LP07 for a VOUT of 0.2V x [R1/ R1 + R2 x (R4/R3 + 1)]. The resistor values are chosen (explained in detail in


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    PDF AN-D14 Voltage Regulator lm10 LM10 op amp LM10 LP07 LP0701N3

    PLCC-6 5050

    Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
    Text: WEB SITE/OEM PRICE LIST OCTOBER 15, 1999 Supersedes September 1998 Web Site/OEM Price List High Voltage ICs, MOSFETs and Arrays 1 SUPERTEX, INC. TERMS OF SALE information and assistance at the Buyer's expense for the defense of same, and the Buyer shall pay all damages and costs awarded therein against the Seller. In case


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    PDF SA146RS PLCC-6 5050 P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG

    LM10 EQUIVALENT

    Abstract: 1225 TRANSISTOR REPLACEMENT 50 Watt MOSFET amplifier
    Text: LP07 Series Application Note AN-D14 Low Dropout 3.0 Volt Linear Regulator by Jimes Lei, Applications Manager Introduction with a closed-loop gain of R4 / R3 + 1 . The LP07 is configured as a common source amplifier, which functions as a series pass transistor while contributing additional gain to the open-loop gain


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    PDF AN-D14 LM10 EQUIVALENT 1225 TRANSISTOR REPLACEMENT 50 Watt MOSFET amplifier

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices


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    PDF LP0701 DSFP-LP0701 A052109

    LP0701LG-G

    Abstract: 125OC LP0701 JEDEC drawing
    Text: Supertex inc. LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices


    Original
    PDF LP0701 DSFP-LP0701 A052109 LP0701LG-G 125OC LP0701 JEDEC drawing

    Untitled

    Abstract: No abstract text available
    Text: LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices


    Original
    PDF LP0701 DSFP-LP0701 A091708

    Untitled

    Abstract: No abstract text available
    Text: ^ . LP07 Supertex inc P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BVDSS / BV p DGS DS ON *D(ON) (max) (min) V GS(th) (max) 1.50 -1-25A -1.0V -16.5V Order Number / Package TO-92 LP0701N3 Features DICE LP0701ND Advanced MOS Technology Ultra low threshold


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    PDF LP0701ND -1-25A LP0701N3

    BV 726 C

    Abstract: BV 724 C
    Text: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BVDGS Order Number / Package DS ON '□(ON) (max) (min) VGS(ttl) (max) TO-92 SO-8 Die 1.5U -1.25A -1.0V LP0701N3 LP0701LG LP0701ND D -16.5V Features Advanced MOS Technology


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    PDF LP0701 LP0701N3 LP0701LG LP0701ND BV 726 C BV 724 C

    Untitled

    Abstract: No abstract text available
    Text: LP0701 inc. P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV ° ¥ dgs p Order Number / Package max (min) V GS(th) (max) TO-92 SO-8 □ice 1 .5 ÌÌ -1.25A -1.0V LP0701N3 LP0701LG LP0701ND DS(ON) -16.5V '[>(ON) Features □ Ultra low threshold


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    PDF LP0701 LP0701N3 LP0701LG LP0701ND

    Untitled

    Abstract: No abstract text available
    Text: LP0701 1 ni« ThrashnM P-Channel Enhancement-Mode Lateral MOSFET BV DSS / BV DGS D DS ON (max) -16.5V If Ordering Information 1.5Q -1.25A Order Number / Package V GS(th) (max) TO-92 SO-8 Dice -1.0V LP0701N3 LP0701LG LP0701ND WÂ Features Advanced MOS Technology


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    PDF LP0701 LP0701N3 LP0701LG LP0701ND

    Untitled

    Abstract: No abstract text available
    Text: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information D DS ON (max) -16.5V 1 . 50 . JÎ BV DSS / BV DGS Order Number / Package V GS(th) -1.25A (max) TO-92 SO-8 Die -1.0V LP0701N3 LP0701LG LP0701ND Features Advanced MOS Technology


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    PDF LP0701 LP0701N3 LP0701LG LP0701ND

    Untitled

    Abstract: No abstract text available
    Text: LP0701 Çh Supertex inc. Low'Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BV “ *DGS D max (min) VGS(th> (max) 1.5£2 -1 ,25A -1.0V DS(ON) -16.5V ^D(OH) Order Number / Package TO-92 SO-8 Dice LP0701N3 LP0701 LG LP0701ND


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    PDF LP0701 LP0701N3 LP0701 LP0701ND

    VP1304N2

    Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
    Text: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND


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    PDF 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 DN2535ND DN2540N2 DN2540N3 DN2540N5 DN2540N8 VP1304N2 TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2

    pj 89 diode

    Abstract: LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89
    Text: Supertexinc. Short Form Catalog '96 High Voltage Integrated Circuits and DMOS Transistors Supertex inc. Leadership in CMOS/D MOS Technologies Supertex, Inc. designs, develops, manufactures, and markets quality semiconductor products for use in data processing, tele­


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    PDF O-220 O-243 OT-89) OT-23 20-Terminal pj 89 diode LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89

    pj 89 diode

    Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
    Text: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct


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    PDF OT-23 TN2101K1 TN2106K1 TN2124K1 TP2106K1 VN2110K1 VP2110K1 -10ack HV9111 HV9112 pj 89 diode HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode