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    LOW POWER TRANSISTOR SMD Search Results

    LOW POWER TRANSISTOR SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    LOW POWER TRANSISTOR SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SO T2 23 PBSS4360Z 60 V, 3 A NPN low VCEsat BISS transistor 26 February 2014 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4360Z OT223 SC-73) PBSS5360Z. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: SO T2 23 PBSS5360Z 60 V, 3 A PNP low VCEsat BISS transistor 19 February 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5360Z OT223 SC-73) PBSS4360Z. AEC-Q101

    power transistor Ic 4A NPN smd

    Abstract: transistor Ic 4A datasheet NPN smd smd 4A transistor power transistor Ic 4A datasheet NPN smd smd 4A data npn switching transistor Ic 5A transistor Ic 4A datasheet NPN FCX1047A 230NS rce marking
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FCX1047A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance.


    Original     		PDF FCX1047A Type000 50MHz power transistor Ic 4A NPN smd transistor Ic 4A datasheet NPN smd smd 4A transistor power transistor Ic 4A datasheet NPN smd smd 4A data npn switching transistor Ic 5A transistor Ic 4A datasheet NPN FCX1047A 230NS rce marking

    smd transistor MARKING 2A

    Abstract: smd transistor 2A npn smd 2a smd transistor MARKING 2A npn FCX1053A Transistor marking 2A transistor smd marking
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FCX1053A Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 21mv Typ. Extremely low equivalent on-resistance.


    Original     		PDF FCX1053A 100mA 200mA 100MHz smd transistor MARKING 2A smd transistor 2A npn smd 2a smd transistor MARKING 2A npn FCX1053A Transistor marking 2A transistor smd marking

    transistor pnp 12V 1A Continuous Current Peak 2A

    Abstract: diode smd marking 147 MARKING SMD PNP TRANSISTOR 2a IB 115 smd transistor 2A FCX1147A
    Text: Transistors SMD Type PNP Silicon Power Switching Transistor FCX1147A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance.


    Original     		PDF FCX1147A -30mA -10mA -50mA, 50MHz -40mA transistor pnp 12V 1A Continuous Current Peak 2A diode smd marking 147 MARKING SMD PNP TRANSISTOR 2a IB 115 smd transistor 2A FCX1147A

    npn smd 3a

    Abstract: SMD BR 17 smd 2a ic SMD TRANSISTOR MARKING 2A 2A marking transistor npn smd 2a smd transistor 2A smd transistor marking br FCX1051A
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FCX1051A Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 17mv Typ. Extremely low equivalent on-resistance.


    Original     		PDF FCX1051A 100MHz npn smd 3a SMD BR 17 smd 2a ic SMD TRANSISTOR MARKING 2A 2A marking transistor npn smd 2a smd transistor 2A smd transistor marking br FCX1051A

    Untitled

    Abstract: No abstract text available
    Text: PBSS4041PZ 60 V, 5.7 A PNP low VCEsat BISS transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4041PZ OT223 SC-73) PBSS4041NZ. AEC-Q101 PBSS4041PZ

    ic 3A hfe 500

    Abstract: MARKING SMD PNP TRANSISTOR FCX1149A TRANSISTOR SMD PNP 1A
    Text: Transistors SMD Type PNP Silicon Power Switching Transistor FCX1149A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 45mv Typ. Extremely low equivalent on-resistance.


    Original     		PDF FCX1149A -100mA -10mA -50mA, 50MHz -40mA ic 3A hfe 500 MARKING SMD PNP TRANSISTOR FCX1149A TRANSISTOR SMD PNP 1A

    transistor 103

    Abstract: TRANSISTOR SMD MARKING CODE QR s47 IC smd marking code PBSS4240X TRANSISTOR SMD CODE PACKAGE SOT89 4 marking HD SOT89
    Text: PBSS4240X 40 V, 2 A NPN low VCEsat BISS transistor 15 October 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement:


    Original     		PDF PBSS4240X PBSS5240X. transistor 103 TRANSISTOR SMD MARKING CODE QR s47 IC smd marking code PBSS4240X TRANSISTOR SMD CODE PACKAGE SOT89 4 marking HD SOT89

    Untitled

    Abstract: No abstract text available
    Text: PBSS4032PZ 30 V, 4.4 A PNP low VCEsat BISS transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4032PZ OT223 SC-73) PBSS4032NZ. AEC-Q101 PBSS4032PZ

    4350SS

    Abstract: 4350S PBSS4350SPN PBSS4350SS PBSS5350SS
    Text: PBSS4350SS 50 V, 2.7 A NPN/NPN low VCEsat BISS transistor Rev. 01 — 3 April 2007 Product data sheet 1. Product profile 1.1 General description NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4350SS OT96-1 PBSS4350SPN PBSS5350SS PBSS4350SS 4350SS 4350S PBSS4350SPN PBSS5350SS

    TRANSISTOR SMD CODE PACKAGE SOT89 4

    Abstract: No abstract text available
    Text: PBSS5240X 40 V, 2 A PNP low VCEsat BISS transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement:


    Original     		PDF PBSS5240X PBSS4240X. TRANSISTOR SMD CODE PACKAGE SOT89 4

    transistor smd marking CQ

    Abstract: transistor smd marking CR transistor cr marking transistor smd marking CQ MARKING SMD npn TRANSISTOR transistor smd cr transistor CR NPN 2SC2411K
    Text: Transistors SMD Type Medium Power Transistor 2SC2411K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 NPN silicon transistor 0.55 Low VCE sat . Optimal for low voltage operation. +0.1 1.3-0.1 +0.1 2.4-0.1 High ICMax. ICMax. = 0.5A 2 +0.1 0.95-0.1


    Original     		PDF 2SC2411K OT-23 100mA 500mA/50mA -20mA, 100MHz transistor smd marking CQ transistor smd marking CR transistor cr marking transistor smd marking CQ MARKING SMD npn TRANSISTOR transistor smd cr transistor CR NPN 2SC2411K

    4350SPN

    Abstract: PBSS4350SPN PBSS4350SS PBSS5350SS MARKING SMD PNP TRANSISTOR FR TRANSISTOR SMD MARKING CODE 42
    Text: PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat BISS transistor Rev. 01 — 5 April 2007 Product data sheet 1. Product profile 1.1 General description NPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4350SPN OT96-1 PBSS4350SS PBSS5350SS PBSS4350SPN 4350SPN PBSS4350SS PBSS5350SS MARKING SMD PNP TRANSISTOR FR TRANSISTOR SMD MARKING CODE 42

    Untitled

    Abstract: No abstract text available
    Text: PBSS4032SPN 30 V NPN/PNP low VCEsat BISS transistor Rev. 2 — 14 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4032SPN OT96-1 PBSS4032SN PBSS4032SP

    A66 smd transistor

    Abstract: TRANSISTOR SMD MARKING CODE A66 a105 SMD transistor
    Text: PBSS4021PZ 20 V, 6.6 A PNP low VCEsat BISS transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4021PZ OT223 SC-73) PBSS4021NZ. AEC-Q101 PBSS4021PZ A66 smd transistor TRANSISTOR SMD MARKING CODE A66 a105 SMD transistor

    Untitled

    Abstract: No abstract text available
    Text: PBSS4041SPN 60 V NPN/PNP low VCEsat BISS transistor Rev. 2 — 20 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4041SPN OT96-1 PBSS4041SN PBSS4041SP

    Untitled

    Abstract: No abstract text available
    Text: PBSS4032NZ 30 V, 4.9 A NPN low VCEsat BISS transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4032NZ OT223 SC-73) PBSS4032PZ. AEC-Q101 PBSS4032NZ

    Untitled

    Abstract: No abstract text available
    Text: PBSS4021NZ 20 V, 8 A NPN low VCEsat BISS transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4021NZ OT223 SC-73) PBSS4021PZ. AEC-Q101 PBSS4021NZ

    NPN/a105 transistor

    Abstract: No abstract text available
    Text: PBSS4021SPN 20 V NPN/PNP low VCEsat BISS transistor Rev. 2 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4021SPN OT96-1 PBSS4021SN PBSS4021SP NPN/a105 transistor

    PBSS4350SPN

    Abstract: PBSS4350SS PBSS5350SS
    Text: PBSS5350SS 50 V, 2.7 A PNP/PNP low VCEsat BISS transistor Rev. 01 — 3 April 2007 Product data sheet 1. Product profile 1.1 General description PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5350SS OT96-1 PBSS4350SPN PBSS4350SS PBSS5350SS PBSS4350SPN PBSS4350SS

    SC-73

    Abstract: No abstract text available
    Text: PBSS4032PZ 30 V, 4.4 A PNP low VCEsat BISS transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4032PZ OT223 SC-73) PBSS4032NZ. AEC-Q101 PBSS4032PZ SC-73

    SC-73

    Abstract: No abstract text available
    Text: PBSS4021NZ 20 V, 8 A NPN low VCEsat BISS transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4021NZ OT223 SC-73) PBSS4021PZ. AEC-Q101 PBSS4021NZ SC-73

    SC-73

    Abstract: Pb404 PB4041PZ
    Text: PBSS4041PZ 60 V, 5.7 A PNP low VCEsat BISS transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4041PZ OT223 SC-73) PBSS4041NZ. AEC-Q101 PBSS4041PZ SC-73 Pb404 PB4041PZ