Untitled
Abstract: No abstract text available
Text: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic
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SPA1118Z
850MHz
850MHz
SPA1118Z
MCH18
100nH,
1008HQ
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Untitled
Abstract: No abstract text available
Text: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features Optimum Technology Matching Applied • VCC InGaP HBT N/C VBIAS SiGe BiCMOS Active Bias
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SPA1118Z
850MHz
SPA1118Z
106K020R
MCH18
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Untitled
Abstract: No abstract text available
Text: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features Optimum Technology Matching Applied GaAs HBT VCC GaAs MESFET N/C InGaP HBT
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SPA1118Z
850MHz
SPA1118Z
DS111217
ECB-101161
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AT880
Abstract: lot code RFMD
Text: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features Optimum Technology Matching Applied • VC1 DE VBIAS Active Bias
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SPA2118Z
850MHz
SPA2118Z
ECB-101161
DS111219
AT880
lot code RFMD
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Untitled
Abstract: No abstract text available
Text: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic
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SPA2118Z
850MHz
SPA2118Z
LL1608-FS
1008HQ
MCR03
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lot code RFMD
Abstract: ECB-101161
Text: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features Optimum Technology Matching Applied • VC1 VBIAS Active Bias SiGe BiCMOS GaAs pHEMT
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SPA2118Z
850MHz
SPA2118Z
950MHz
ECB-101161
DS120502
lot code RFMD
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transistor 1p3
Abstract: SXA3318B SXA3318BZ sirenza rfmd AH03L MCH18 SXA-3318B TAJB104KLRH TAJB106K020R L350
Text: SXA-3318B Z SXA-3318B(Z) 400MHz to 2500MHz Balanced ½ W Medium Power GaAs HBT Amplifier 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description Features Optimum Technology
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SXA-3318B
400MHz
2500MHz
SXA-3318B
28dBm
AM03M
transistor 1p3
SXA3318B
SXA3318BZ
sirenza rfmd
AH03L
MCH18
TAJB104KLRH
TAJB106K020R
L350
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transistor 1p3
Abstract: No abstract text available
Text: SXA-3318B Z SXA-3318B(Z) 400MHz to 2500MHz Balanced ½ W Medium Power GaAs HBT Amplifier 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description Features RFMD’a SXA-3318B amplifier is a high efficiency GaAs Heterojunction
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SXA-3318B
400MHz
2500MHz
AM03M
MCR100J
transistor 1p3
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Untitled
Abstract: No abstract text available
Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT
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SPA2318Z
SPA2318ZLow
1700MHz
2200MHz
SPA2318Z
1960MHz
2140MHz
SPA2318ZSQ
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an 214 amp schematic diagram
Abstract: ROHM MCR03 ECB-101161
Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features GaAs MESFET InGaP HBT VC1 Si BiCMOS VBIAS SiGe HBT GaAs pHEMT RFIN Si CMOS Si BJT
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SPA2318ZLow
SPA2318Z
1700MHz
2200MHz
SPA2318Z
1960MHz
2140MHz
an 214 amp schematic diagram
ROHM MCR03
ECB-101161
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ECB-101161
Abstract: No abstract text available
Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.7dBm WCDMA Channel
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SPA2318ZLow
SPA2318Z
1700MHz
2200MHz
SPA2318Z
1960MHz
2140MHz
DS111219
ECB-101161
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MC 3041 opto
Abstract: 4N47A 548D 4N48U JANTXV 4N49 JANTXJANTXV 4N49U JANTX JANTXV 3041 OPTO 4N49 opto 4N47U JANTX federal isolator
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 September 2001. MIL-PRF-19500/548D 8 June 2001 SUPERSEDING MIL-PRF-19500/548C 10 October 1997 PERFORMANCE SPECIFICATION COUPLER, OPTO ELECTRONIC, SEMICONDUCTOR DEVICE, SOLID STATE
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MIL-PRF-19500/548D
MIL-PRF-19500/548C
4N47A,
4N48A,
4N49A,
4N47U,
4N48U,
4N49U
MC 3041 opto
4N47A
548D
4N48U JANTXV
4N49 JANTXJANTXV
4N49U JANTX JANTXV
3041 OPTO
4N49 opto
4N47U JANTX
federal isolator
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zt3243
Abstract: zt3243lfey ZT3243LFEA zt3243l ZT3243F ZT3243FEA ZT3243LFET ZT3241LFEA ZT3243FEY ZT3243E
Text: ZT3243F Low Power +3V to +5.5V, 3D/5R 1000kbps RS232 Transceivers Zywyn Corporation ZT3241F/ZT3243F Zywyn ZT3241F/ZT3243F Low Power +3V to +5.5V, 3D/5R 1000kbps RS232 Transceivers Features General Description • Meets or Exceeds the EIA/TIA-232F and CCITT
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ZT3243F
1000kbps
RS232
ZT3241F/ZT3243F
EIA/TIA-232F
EIA/TIA-232
EIA/TIA-562
zt3243
zt3243lfey
ZT3243LFEA
zt3243l
ZT3243FEA
ZT3243LFET
ZT3241LFEA
ZT3243FEY
ZT3243E
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zt3243leea
Abstract: zt3243 ZT3243LEEY zt3243l ZT3243E ZT3243F zt3243eea ZT3241LEEA Zywyn ZT3243LE
Text: ZT3243E Low Power +3V to +5.5V, 3D/5R 250kbps RS232 Transceivers Zywyn Corporation ZT3241E/ZT3243E Zywyn ZT3241E/ZT3243E Low Power +3V to +5.5V, 3D/5R 250kbps RS232 Transceivers Features General Description • Meets or Exceeds the EIA/TIA-232F and CCITT V.28/V.24 Specifications for VCC at +3.3V ±10%
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ZT3243E
250kbps
RS232
ZT3241E/ZT3243E
EIA/TIA-232F
EIA/TIA-232
EIA/TIA-562
zt3243leea
zt3243
ZT3243LEEY
zt3243l
ZT3243F
zt3243eea
ZT3241LEEA
Zywyn
ZT3243LE
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Untitled
Abstract: No abstract text available
Text: 1SMB2EZ6.8~1SMB2EZ51 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 2.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V
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1SMB2EZ51
DO-214AA,
MIL-STD-750,
E1A-481)
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Untitled
Abstract: No abstract text available
Text: DIE PRODUCTS BURR-BROWN* HI-508 DIE 1 E Single-Ended 8-Channel CMOS ANALOG MULTIPLEXER DIE FEATURES DESCRIPTION • ANALOG OVERVOLTAGE PROTECTION: 70Vp-p • NO CHANNEL INTERACTION DURING OVERVOLTAGE • ESD RESISTANT • BREAK-BEFORE-MAKE SWITCHING • ANALOG SIGNAL RANGE: ±15V
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HI-508
70Vp-p
HI-508KD
12-8mW/â
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LOT CODE NE NEC
Abstract: No abstract text available
Text: TERM. NO.’s FOR rri REF. . 2 5 0 MAX. [6.35] ONLY . 3 4 5 MAX. [8.76] ^ 1 .240 MAX. [ 6 . 10 ] DOT L OCATES TERM. LOT #1 CODE & DATE CODE .305 [7.75] AREA REPRESENTS T E R M I N A L PAD DI MENSI ONS .030 6 030(6) [.76] [.76] PRI • .073(4) SEC 5, [1.85]
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1250VDC,
1500VDC
392uH
10kHz,
31096R
LOT CODE NE NEC
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8MW1
Abstract: 8MW1 VDFN marking 1be HI-509 HI-509KD
Text: DDE PRODUCTS BURR-BROWN* [ HI-509 DIE 1 Differential 4-Channel C M O S ANALO G M ULTIPLEXER DIE FEATURES DESCRIPTION • A N A LO G O V ER VO LT AG E PROTECTION: 70Vp-p • NO C H A N N EL INTERACTION DURING O V ER VO LT AG E • E S D R ESIST A N T • BR EA K -B EF O R E-M A K E SW ITCHING
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HI-509
70Vp-p
HI-509KD
70Vp-rrent.
-28mW
8MW1
8MW1 VDFN
marking 1be
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RX2056
Abstract: No abstract text available
Text: RX2056 916.5 MHz ASH Receiver Ideal for 916.5 MHz, 3 V Data Receivers in the USA and Canada Passive Design with No RF Oscillation Use with HX2000for 19.2 kbps Data Rate Simple to Apply with External Parts Count Rugged, Surface-Mount Package with 130 mm2 Footprint
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RX2056
HX2000for
RX2056-A-071598
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HI-507
Abstract: HI-507KD
Text: DIE PRODUCTS B U R R -B R O W N * [ HI-507 DIE 1 Differential 8-Channel CMOS ANALOG MULTIPLEXER DIE FEATURES DESCRIPTION • ANALOG OVERVOLTAGE PROTECTION: 70Vp-p • NO CHANNEL INTERACTION DURING OVERVOLTAGE • ESD RESISTANT • BREAK-BEFORE-MAKE SWITCHING
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OCR Scan
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PDF
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HI-507
70Vp-p
HI-507KD
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hs82c54
Abstract: No abstract text available
Text: HS-82C85RH HARRIS S E M I C O N D U C T O R Radiation Hardened CMOS Static Clock Controller/Generator A ug ust 1995 Features Pinouts • Radiation Hardened - Total Dose > 10s RAD Si - Transient Upset > 108 RAD (Si)/s - Latch Up Free EPI-CMOS • Very Low Power Consumption
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HS-82C85RH
IL-STD-1835
CDIP2-T24
CLK50
82C85
hs82c54
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Untitled
Abstract: No abstract text available
Text: RX4700 868.35 MHz ASH Receiver Ideal fo r 868.35 MHz, 3 V D ata Receivers in Europe High-Sensitivity Passive Design with No RF Oscillation Use with H X 4007for2.4 kbps D ata Rate Simple to Apply with External Parts Count Rugged, Surface-Mount Package with 130 mm2 Footprint
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OCR Scan
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PDF
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RX4700
4007for2
RX4700-C-092398
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Untitled
Abstract: No abstract text available
Text: RX1300 418.0 MHz ASH Receiver Ideal fo r 418.0 MHz, 3 V D ata Receivers in the UK and the USA High-Sensitivity Passive Design with No RF Oscillation Baseband D ata Rate o f2400 bis Simple to Apply with External Parts Count Rugged, Surface-Mount Package with 130 mm2 Footprint
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RX1300
f2400
RX1300-A-041798
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HI-508
Abstract: HI-508KD ad 508 die
Text: DIE PRODUCTS B U R R -B R O W N * HI-508 DIE 1 [ Single-Ended 8-Channel CMOS ANALOG MULTIPLEXER DIE FEATURES DESCRIPTION • ANALOG OVERVOLTAGE PROTECTION: 70Vp-p The HI-508KD die is an 8-channel single-ended analog multiplexer with input overvoltage pro
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HI-508
70Vp-p
HI-508KD
-28mW
ad 508 die
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